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Vishay Siliconix SQJ416EP-T1_GE3
- Part No.:
- SQJ416EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ416EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 100V 27A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:12,685
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Product details
Overview
SQJ416EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 27 A continuous drain current at 25 °C, and 0.030 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ416EP-T1_GE3 datasheet, SQJ416EP-T1_GE3 pinout, SQJ416EP-T1_GE3 application, or SQJ416EP-T1_GE3 equivalent, key selection criteria include its 3.3 °C/W junction-to-case thermal resistance, 100 % Rg and UIS tested reliability, PowerPAK® SO-8L leadless package compatibility with high-power density layouts, and guaranteed 100 V VDS breakdown under automotive transients.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate charge profile (Qg = 10–20 nC, Qgd = 3 nC) supports efficient PWM operation in BLDC motor drives and synchronous rectification.
The device integrates a robust body diode with VSD = 0.87–1.2 V at IF = 10 A and ISM = 70 A pulsed source current capability, enabling freewheeling and reverse-current protection without external diodes in bidirectional power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands load-dump transients up to ISO 7637-2 Pulse 5a (120 V peak) when properly clamped |
| RDS(on) @ VGS = 10 V | 0.030 Ω max - Enables ≤ 8.1 W conduction loss at 27 A, reducing heatsink requirements |
| ID Continuous @ TC = 25 °C | 27 A - Supports high-current solenoid drivers and HVAC blower motors |
| Junction Temperature Range | −55 to +175 °C - Qualified for engine compartment placement per AEC-Q101 stress test conditions |
| Qg / Qgd | 10–20 nC / 3 nC - Low gate drive energy enables use with standard 1-A gate drivers at ≥100 kHz switching |
| RthJC | 3.3 °C/W - Allows direct thermal coupling to metal-core PCBs or heatsinks for high-power density designs |
| EAS | 26 mJ - Withstands inductive turn-off energy in 48 V mild-hybrid starter-generator circuits |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, exposed copper drain paddle), dimensions 6.15 mm × 5.13 mm × 1.07 mm (JEDEC MO-263AA). Bottom-side thermal pad requires full-solder coverage for optimal RthJC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Common source connection; pins 1/2/3/7/8 are internally tied - used for low-inductance return path and thermal conduction |
| 4 | Gate (G) | Control input; requires <20 V absolute max rating; gate resistance Rg = 1–3.2 Ω affects switching speed and ringing |
| 5, 6 | Drain (D) | Main power output; pins 5/6 connect to exposed copper paddle - primary thermal and current path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including HTOL, TC, UHAST, and ESD testing - eliminates requalification effort for Tier 1 designs |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in motor fault conditions |
| TrenchFET® architecture | Optimized cell pitch and trench depth yield 22% lower RDS(on) vs. planar MOSFETs at same die size - improves power density in space-constrained ECUs |
| PowerPAK SO-8L package | Leadless construction reduces parasitic inductance by >30% vs. SO-8 - minimizes voltage overshoot during 50 A/μs switching in 48 V systems |
| 175 °C operation | Rated for continuous use at maximum junction temperature - enables simplified thermal design in sealed enclosures without active cooling |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Driving 12 V solenoid-type fuel injectors with 1–2 ms pulse width and 10 A peak current in gasoline direct injection systems. IC Role / Device Role / Timing Role: High-side switch controlling injector coil energization; must sustain 100 V flyback spikes and switch within 500 ns. Use Value: 0.030 Ω RDS(on) limits on-state loss to <3.3 W; 26 mJ EAS absorbs inductive kickback without snubber. |
Use Scenario: High-side synchronous rectifier in 48 V-to-12 V bi-directional DC-DC converter for mild-hybrid vehicles. IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz PWM; handles 25 A continuous forward current and reverse recovery during phase shift. Use Value: Low Qgd/Qg ratio (30%) minimizes Miller-induced shoot-through risk; 175 °C rating supports compact heatsink-less layout. |
| Electric Power Steering (EPS) Motor Phase Leg | 12 V Battery Disconnect Switch |
Use Scenario: Upper switch in three-phase inverter driving 300 W brushless DC motor in column-assist EPS systems. IC Role / Device Role / Timing Role: Half-bridge high-side MOSFET; commutates 20 A RMS current with <100 ns dead-time tolerance. Use Value: 3.3 °C/W RthJC enables direct mounting to aluminum housing; 70 A IDM withstands stall current surges. |
Use Scenario: Isolation switch between 12 V starter battery and vehicle loads during key-off to prevent parasitic drain. IC Role / Device Role / Timing Role: Normally-open power switch controlled by BCM; must hold off 100 V transients and conduct 30 A continuously. Use Value: AEC-Q101 qualification ensures 15-year lifetime under thermal cycling; 0.87 V VSD enables low-loss reverse-current blocking during jump-start events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | Higher RDS(on) (0.038 Ω), same PowerFLAT 5x6 package, 175 °C rated | Lower current capability (22 A) and higher gate charge (25 nC) limit switching frequency | Preferred where ST ecosystem integration or dual-source procurement is required |
| IRF4905PbF | SO-8 package (not leadless), lower VDS (55 V), higher RDS(on) (0.02 Ω), non-automotive grade | Not AEC-Q101 qualified; unsuitable for under-hood use; limited to cabin modules | Only acceptable for cost-sensitive non-automotive industrial prototypes |
Compared with STL220N10F7 and IRF4905PbF, SQJ416EP-T1_GE3 delivers superior thermal performance (3.3 vs. 4.5 °C/W RthJC), tighter RDS(on) distribution, and full automotive qualification - making it the preferred choice for production ECU and EPS designs requiring long-term supply stability and zero requalification risk.
Availability
SQJ416EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V mild-hybrid DC-DC conversion, and electric power steering systems requiring stable component supply across multi-year vehicle programs.
Supply support for SQJ416EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ416EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-efficiency, high-temperature switching in engine control, ADAS, and electrified powertrain subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ416EP-T1_GE3 at 125 °C case temperature?
The SQJ416EP-T1_GE3 supports 15 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures reliable operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain TC ≤ 125 °C under full load.
Is SQJ416EP-T1_GE3 compatible with standard SO-8 footprint layouts?
No - SQJ416EP-T1_GE3 uses the PowerPAK® SO-8L leadless package, which has a different pad layout and thermal pad configuration than standard SO-8. The exposed drain paddle (pins 5/6) requires a dedicated thermal land pattern per Vishay document 63818, and the absence of gull-wing leads means conventional SO-8 reflow profiles are not applicable.
Does SQJ416EP-T1_GE3 include integrated ESD protection on the gate terminal?
Yes - the SQJ416EP-T1_GE3 gate structure incorporates on-die ESD protection rated to ±100 nA IGSS at ±20 V, meeting AEC-Q101 human-body model (HBM) requirements. This allows direct interface with microcontroller GPIOs without external gate resistors for ESD suppression in production assemblies.
What is the typical total gate charge (Qg) value for SQJ416EP-T1_GE3 at 10 V gate drive?
The typical total gate charge (Qg) for SQJ416EP-T1_GE3 is 10 nC at VGS = 10 V, VDS = 50 V, and ID = 10 A, as measured per the datasheet's dynamic specifications table. This low Qg enables efficient switching with common 1-A gate drivers while maintaining <10 ns rise/fall times in optimized gate loop layouts.
Can SQJ416EP-T1_GE3 be used in synchronous rectification topologies?
Yes - SQJ416EP-T1_GE3 is suitable for synchronous rectification in automotive DC-DC converters due to its low RDS(on) (0.030 Ω), fast switching characteristics (tr/tf = 20–35 ns), and robust body diode (VSD = 0.87 V at 10 A). Its AEC-Q101 qualification ensures reliability under the thermal and voltage stress inherent in high-frequency rectifier operation.
SQJ416EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ416EP-T1_GE3 FAQ
1.How can I place an order for SQJ416EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ416EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ416EP-T1_GE3 reliable?
The price and inventory of SQJ416EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ416EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ416EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ416EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ416EP-T1_GE3?
SQJ416EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ416EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ416EP-T1_GE3?
For technical support, including SQJ416EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ416EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ416EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ416EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ416EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ416EP-T1_GE3?
All SQJ416EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ416EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ416EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ416EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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