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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ418EP-T1_BE3

Name: SQJ418EP-T1_BE3
Brand: Vishay Siliconix
SKU: SQJ418EP-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ418EP-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ418EP-T1_BE3.pdf

Description:: N-CHANNEL 100-V (D-S) 175C MOSFE

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Product details

Overview

SQJ418EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 48 A continuous drain current at 25 °C, and 0.014 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.

For engineers reviewing the SQJ418EP-T1_BE3 datasheet, SQJ418EP-T1_BE3 pinout, SQJ418EP-T1_BE3 application, or SQJ418EP-T1_BE3 equivalent, key selection criteria include its 100 % R_g and UIS tested reliability, PowerPAK® SO-8L leadless package thermal performance (R_thJC = 2.2 °C/W), and verified 175 °C operation in automotive environments.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature automotive power stages. Its gate charge profile (Q_g = 20–35 nC, Q_gd = 4.5 nC) supports efficient PWM operation in 48 V systems, while the integrated body diode (V_SD = 0.85–1.2 V at 15 A) enables synchronous rectification and freewheeling in bidirectional topologies.

The device features a thermally enhanced PowerPAK® SO-8L package with exposed copper drain pad on the bottom side, delivering 2.2 °C/W junction-to-case thermal resistance. Its 100 % UIS (Unclamped Inductive Switching) testing ensures robustness against inductive load transients common in motor drive and solenoid control circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V automotive bus with ≥2× overvoltage margin for load dump transients
R_DS(on) @ 10 V	0.014 Ω - Enables ≤7 W conduction loss at 48 A, critical for high-efficiency 12/48 V DC-DC converters
I_D (continuous)	48 A @ T_C = 25 °C - Sustains high-current motor phase switching without derating in heatsinked layouts
T_J max	+175 °C - Qualified for engine compartment placement per AEC-Q101, eliminating external thermal derating
Q_g	20–35 nC - Low gate drive energy reduces controller IC loading and switching losses in 100–500 kHz SMPS
R_thJC	2.2 °C/W - Enables direct thermal coupling to PCB copper or heatsink for >60 W power dissipation capability
E_AS	65 mJ - Withstands single-pulse inductive energy in starter relay and fuel pump driver fault conditions

Pinout & Package

Package: PowerPAK® SO-8L - leadless surface-mount package with exposed copper drain pad on bottom side; dimensions 6.15 mm × 5.13 mm × 1.07 mm (L × W × H); RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (S)	Source	Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching
4 (G)	Gate	Single gate terminal with 0.45–1.70 Ω internal gate resistance - limits dv/dt and suppresses parasitic oscillation
5, 6, 7, 8 (D)	Drain	Four drain terminals connected to exposed bottom copper pad - primary thermal and current path to PCB

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per Rev. D test plan
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - no field failures from transient overstress
PowerPAK® SO-8L package	Thermal resistance reduced by 40 % vs. standard SO-8; enables 2× power density in space-constrained ECUs
175 °C operation	Full parametric performance guaranteed up to T_J = +175 °C - eliminates need for external thermal sensors or derating tables
Low Crss/Ciss ratio	Crss = 48–70 pF, Ciss = 1276–1700 pF - improves Miller immunity and enables stable gate drive with standard 1 A drivers

Applications

Engine Control Unit (ECU) Fuel Injector Driver	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-speed, high-current switching of solenoid-based fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: High-side N-channel switch controlling 12 V injector coil with 5–10 ms pulse width and 10 A peak current. Use Value: 175 °C rating allows placement near engine block; low R_DS(on) minimizes self-heating during extended idle duty cycles.	Use Scenario: Primary-side high-frequency switching in bi-directional 48 V/12 V DC-DC converters for mild hybrid architectures. IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch operating at 200–300 kHz with 40–50 A RMS current. Use Value: Low Q_gd/Q_g ratio ensures clean turn-off and reduces cross-conduction losses; PowerPAK SO-8L enables compact transformer layout.
Electric Power Steering (EPS) Motor Phase Leg	Commercial Vehicle Battery Disconnect Switch
Use Scenario: Half-bridge phase leg in 3-phase brushless motor driver for steering assist actuation. IC Role / Device Role / Timing Role: Low-side switch handling 30–40 A continuous phase current with 100 ns dead-time requirements. Use Value: 100 % UIS tested withstands motor regeneration spikes; 2.2 °C/W R_thJC maintains <125 °C T_J under full torque stall condition.	Use Scenario: High-reliability main battery isolation switch in Class 6–8 trucks with 1200 A short-circuit protection requirement. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical contactor, controlled via isolated gate driver. Use Value: AEC-Q101 qualification ensures 15+ year field life; E_AS = 65 mJ prevents failure during sudden load dump events.

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-speed, high-current switching of solenoid-based fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling 12 V injector coil with 5–10 ms pulse width and 10 A peak current.

Use Value: 175 °C rating allows placement near engine block; low R_DS(on) minimizes self-heating during extended idle duty cycles.

Use Scenario: Primary-side high-frequency switching in bi-directional 48 V/12 V DC-DC converters for mild hybrid architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch operating at 200–300 kHz with 40–50 A RMS current.

Use Value: Low Q_gd/Q_g ratio ensures clean turn-off and reduces cross-conduction losses; PowerPAK SO-8L enables compact transformer layout.

Electric Power Steering (EPS) Motor Phase Leg

Commercial Vehicle Battery Disconnect Switch

Use Scenario: Half-bridge phase leg in 3-phase brushless motor driver for steering assist actuation.

IC Role / Device Role / Timing Role: Low-side switch handling 30–40 A continuous phase current with 100 ns dead-time requirements.

Use Value: 100 % UIS tested withstands motor regeneration spikes; 2.2 °C/W R_thJC maintains <125 °C T_J under full torque stall condition.

Use Scenario: High-reliability main battery isolation switch in Class 6–8 trucks with 1200 A short-circuit protection requirement.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical contactor, controlled via isolated gate driver.

Use Value: AEC-Q101 qualification ensures 15+ year field life; E_AS = 65 mJ prevents failure during sudden load dump events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 0.0095 Ω @ 10 V (lower), but T_J max = +175 °C not AEC-Q101 qualified	Industrial UPS and solar inverters where automotive qualification is not required	Select when lower conduction loss is prioritized over automotive compliance and long-term reliability validation
IRF100B216	R_DS(on) = 0.012 Ω @ 10 V, TO-220FP package, R_thJC = 1.5 °C/W, but not AEC-Q101 qualified	Aftermarket automotive modules with heatsink mounting and manual solder rework capability	Select when higher thermal conductivity is needed and leaded through-hole assembly is acceptable

Compared with STL220N10F7 and IRF100B216, the SQJ418EP-T1_BE3 uniquely combines AEC-Q101 qualification, PowerPAK SO-8L surface-mount compatibility, and guaranteed 175 °C operation - making it the only option for production automotive ECUs requiring zero rework risk and full lifecycle traceability.

Availability

SQJ418EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering systems, and commercial vehicle battery management requiring stable component supply across multi-year automotive production programs.

Supply support for SQJ418EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJ418EP-T1_BE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® SO-8L family, engineered specifically for high-temperature, high-current switching in next-generation 12 V and 48 V vehicle electrical architectures.

FAQ

What is the maximum continuous drain current rating for SQJ418EP-T1_BE3 at 125 °C case temperature?

The SQJ418EP-T1_BE3 supports 27 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8L package under high ambient conditions. Designers must verify PCB copper area and airflow to sustain this current without exceeding the +175 °C maximum junction temperature. The SQJ418EP-T1_BE3 datasheet provides R_thJA = 68 °C/W for 1"² FR4 board, enabling accurate thermal modeling.

Is SQJ418EP-T1_BE3 pin-compatible with other PowerPAK SO-8L N-channel MOSFETs?

The SQJ418EP-T1_BE3 uses the standard PowerPAK® SO-8L single configuration with pins 1–4 as Source, pin 4 also serving Gate, and pins 5–8 as Drain - matching the industry-standard pinout for this package. However, pin compatibility alone does not guarantee functional equivalence; R_DS(on), Q_g, and thermal characteristics differ across variants. Always validate switching waveforms and thermal performance when substituting. The SQJ418EP-T1_BE3 is not a drop-in replacement for devices with different gate threshold or avalanche ratings.

Does SQJ418EP-T1_BE3 include integrated ESD protection on the gate?

The SQJ418EP-T1_BE3 does not specify integrated gate ESD protection in its datasheet; it relies on standard MOSFET gate oxide robustness (±20 V V_GS rating) and external circuit-level protection. Gate leakage I_GSS is limited to ±100 nA at ±20 V, confirming oxide integrity, but no human-body-model (HBM) or charged-device-model (CDM) ESD rating is published. For automotive assembly, use controlled ESD-safe handling and consider external gate Zener clamps in high-noise environments. The SQJ418EP-T1_BE3 design assumes system-level ESD mitigation per ISO 10605.

What is the typical gate threshold voltage range for SQJ418EP-T1_BE3?

The SQJ418EP-T1_BE3 has a gate threshold voltage V_GS(th) ranging from 2.5 V to 3.5 V (typical 3.0 V) at I_D = 250 μA, as confirmed in the Specifications table. This tight distribution ensures consistent turn-on behavior across temperature and production lots. At elevated junction temperatures (125–175 °C), V_GS(th) decreases by approximately 10 mV/°C - a key consideration for gate drive design in high-temperature engine bay applications. The SQJ418EP-T1_BE3 requires ≥4.5 V gate drive for reliable enhancement-mode operation under worst-case conditions.

Can SQJ418EP-T1_BE3 be used in synchronous rectification topologies?

Yes, the SQJ418EP-T1_BE3 supports synchronous rectification due to its low R_DS(on) (0.014 Ω), fast switching parameters (t_d(on) = 9–15 ns, t_f = 19–35 ns), and low reverse transfer capacitance (C_rss = 48–70 pF). Its body diode forward voltage V_SD = 0.85–1.2 V at 15 A enables efficient freewheeling when gate is actively driven. However, synchronous control requires precise timing to avoid shoot-through; the SQJ418EP-T1_BE3's gate resistance (0.45–1.70 Ω) helps dampen ringing but necessitates careful driver selection. Use the SQJ418EP-T1_BE3 in secondary-side switching of isolated DC-DC converters up to 300 kHz.

SQJ418EP-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ418EP-T1_BE3 FAQ

1.How can I place an order for SQJ418EP-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ418EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ418EP-T1_BE3 reliable?

The price and inventory of SQJ418EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ418EP-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQJ418EP-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ418EP-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ418EP-T1_BE3?

SQJ418EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ418EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ418EP-T1_BE3?

For technical support, including SQJ418EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ418EP-T1_BE3 requirements.

6.How does Aetrix verify that SQJ418EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQJ418EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ418EP-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQJ418EP-T1_BE3?

All SQJ418EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ418EP-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ418EP-T1_BE3 part is unused and in its original packaging.

Return procedure for SQJ418EP-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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