My Inquiry
My Account
Vishay Siliconix SQJ418EP-T2_GE3
- Part No.:
- SQJ418EP-T2_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ418EP-T2_GE3.pdf
- Description:
- MOSFET N-CH 100V 48A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,178
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQJ418EP-T2_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 100 V drain-source rating, 175 °C maximum junction temperature, and 0.014 Ω RDS(on) at VGS = 10 V. It delivers 48 A continuous drain current at TC = 25 °C and is qualified to AEC-Q101 for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ418EP-T2_GE3 datasheet, SQJ418EP-T2_GE3 pinout, SQJ418EP-T2_GE3 application, or SQJ418EP-T2_GE3 equivalent, this device offers verified 100 % Rg and UIS testing, leadless PowerPAK® SO-8L packaging with exposed-drain thermal pad, and parametric validation across -55 °C to +175 °C operating range - critical for automotive powertrain and ADAS subsystem design.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-reliability automotive systems. Its gate charge profile (Qg = 20–35 nC, Qgd = 4.5 nC) supports efficient PWM operation in 48 V mild-hybrid converters and electric power steering drivers.
The device features a robust body diode with VSD = 0.85–1.2 V at IF = 15 A and 160 A pulsed source current capability, enabling synchronous rectification and bidirectional energy recovery in regenerative braking circuits without external freewheeling diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands transient overvoltage up to ISO 7637-2 Pulse 5a (120 V) in 48 V automotive systems |
| RDS(on) @ VGS = 10 V | 0.014 Ω - Enables ≤ 6.7 W conduction loss at 48 A, reducing heatsink requirements in space-constrained ECUs |
| ID (continuous) | 48 A @ TC = 25 °C - Supports high-current motor phase switching in EPS and HVAC blower modules |
| Junction temp. range | -55 °C to +175 °C - Validated for engine bay placement per AEC-Q101 stress test conditions |
| RthJC | 2.2 °C/W - Enables direct thermal coupling to PCB copper pour or metal-core heatsink for >90 % power dissipation path efficiency |
| Qg / Qgd | 20–35 nC / 4.5 nC - Low gate-drive energy reduces driver IC loading and EMI during 100 kHz+ switching in DC-DC controllers |
| EAS | 65 mJ - Withstands single-pulse avalanche events in inductive load turn-off without failure |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), FR4 PCB mount with 100 % copper on both sides.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Common source connection tied to internal die substrate; electrically and thermally connected to bottom-side exposed copper pad |
| 5 (G) | Gate | Control terminal requiring <1.06 Ω gate resistance to limit ringing; compatible with standard 3.3 V/5 V logic-level drivers |
| 6, 7, 8 (D) | Drain | Main power output terminal; connected to top-side copper pad and bottom-side thermal pad for dual-path heat extraction |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including HTOL, TC, UHAST, and mechanical shock per Rev. D test plan - no derating required for 15-year vehicle life |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from parasitic oscillation or avalanche overstress |
| PowerPAK® SO-8L package | Leadless construction with exposed drain pad reduces RthJA by 40 % vs. SO-8, enabling 68 W power dissipation at TC = 25 °C without external heatsink |
| TrenchFET® silicon | Optimized cell pitch and trench depth yield 25 % lower RDS(on) × Qg figure-of-merit than planar MOSFETs - improves efficiency in 48 V–12 V bidirectional converters |
| 175 °C rated junction | Enables operation in high-ambient zones (e.g., near turbochargers or inverters) without thermal throttling or current derating |
Applications
| Electric Power Steering (EPS) | 48 V Mild-Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side switch in three-phase inverter driving brushless EPS motor. IC Role / Device Role / Timing Role: Main power switch controlling motor phase voltage with <15 ns turn-off delay and <35 ns fall time. Use Value: 0.014 Ω RDS(on) minimizes I²R losses during sustained 40 A peak currents, reducing ECU temperature rise by ≥8 °C vs. legacy 20 mΩ devices. | Use Scenario: Synchronous rectifier in secondary-side of isolated 48 V–12 V LLC resonant converter. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: Body diode VSD ≤ 1.2 V and 160 A pulsed current rating enable zero-voltage switching recovery with <0.3 W conduction loss at 30 A. |
| Battery Disconnect Unit (BDU) | Engine Control Module (ECM) Fuel Injector Driver |
Use Scenario: Main isolation switch between 48 V traction battery and downstream loads during fault conditions. IC Role / Device Role / Timing Role: High-current, high-reliability disconnect switch with 65 mJ avalanche energy rating. Use Value: Single-pulse avalanche capability withstands 100 V × 36 A transients during hot-plug events, eliminating need for external TVS clamping. | Use Scenario: Low-side driver for solenoid-type fuel injectors in gasoline direct injection engines. IC Role / Device Role / Timing Role: Fast-switching injector control switch with <25 ns turn-off delay and 175 °C junction rating. Use Value: 175 °C operation allows mounting directly on ECM board near combustion chamber sensors, avoiding remote mounting and harness routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | RDS(on) = 0.0022 Ω @ 10 V (lower), but 100 V rating and AEC-Q101 qualified; larger PowerFLAT 5x6 package (6.0 × 5.0 mm) | Higher current density enables smaller heatsink in 60 A+ injectors, but requires different PCB layout and thermal pad stencil | Select when system-level RDS(on) target <2.5 mΩ justifies re-layout and higher cost |
| IRFH5020TRPBF | RDS(on) = 0.0028 Ω @ 10 V; same PowerPAK SO-8L footprint but not AEC-Q101 qualified; RthJC = 2.5 °C/W | Lower thermal resistance than many alternatives but lacks automotive qualification - suitable only for industrial/commercial 48 V systems | Select only for non-automotive applications where AEC-Q101 is not mandated and 2.8 mΩ RDS(on) meets efficiency targets |
Compared with STL220N10F7 and IRFH5020TRPBF, SQJ418EP-T2_GE3 provides optimal balance of AEC-Q101 compliance, 14 mΩ RDS(on), and drop-in compatibility with existing PowerPAK SO-8L layouts - making it the preferred choice for production automotive ECUs where qualification, thermal performance, and supply chain continuity are jointly critical.
Availability
SQJ418EP-T2_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild-hybrid DC-DC converters, and battery disconnect units requiring stable component supply across multi-year automotive production cycles.
Supply support for SQJ418EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ418EP-T2_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-efficiency, high-temperature power conversion in next-generation 48 V architectures and electrified powertrain systems.
FAQ
What is the maximum continuous drain current rating for SQJ418EP-T2_GE3 at 125 °C case temperature?
The SQJ418EP-T2_GE3 supports 27 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package under high ambient conditions and must be validated against actual PCB copper area and airflow in the target application. The SQJ418EP-T2_GE3 maintains full AEC-Q101 compliance across this entire temperature range.
Is SQJ418EP-T2_GE3 pin-compatible with standard SO-8 packages?
No - SQJ418EP-T2_GE3 uses the leadless PowerPAK® SO-8L package with bottom-side thermal pad and non-leaded terminals, differing mechanically and thermally from through-hole or gull-wing SO-8. Its pinout (S-S-S-G-D-D-D) matches PowerPAK SO-8L footprints only. The SQJ418EP-T2_GE3 requires dedicated PCB land pattern per Vishay doc #63818 and cannot be substituted into legacy SO-8 layouts without redesign.
Does SQJ418EP-T2_GE3 include integrated ESD protection?
The SQJ418EP-T2_GE3 does not specify integrated ESD protection diodes in its datasheet. Gate-source leakage (±100 nA) and threshold voltage stability are verified per AEC-Q101, but system-level ESD protection (e.g., IEC 61000-4-2) must be implemented externally using TVS diodes or RC networks. This design approach ensures robustness in automotive environments while maintaining gate oxide integrity - a key requirement reflected in the SQJ418EP-T2_GE3 qualification protocol.
What is the typical total gate charge (Qg) of SQJ418EP-T2_GE3 at 10 V drive voltage?
The SQJ418EP-T2_GE3 has a typical total gate charge (Qg) of 20 nC at VGS = 10 V, VDS = 50 V, and ID = 20 A, with a maximum of 35 nC. This value directly impacts gate driver selection: a 1 A peak driver can fully switch the SQJ418EP-T2_GE3 in <35 ns, supporting >1 MHz PWM in high-frequency DC-DC stages. The SQJ418EP-T2_GE3's Qgd/Qg ratio of ~22.5 % also indicates strong Miller immunity during hard commutation.
Can SQJ418EP-T2_GE3 be used in linear mode (beyond saturation) for analog current regulation?
The SQJ418EP-T2_GE3 is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) curve in the datasheet is limited to pulse durations ≤100 ms and excludes DC or long-duration linear biasing. For analog current regulation, Vishay recommends dedicated lateral DMOS or bipolar devices. Using SQJ418EP-T2_GE3 outside its specified SOA risks thermal runaway - a limitation explicitly defined in the SQJ418EP-T2_GE3 datasheet's "Safe Operating Area" graph on page 4.
SQJ418EP-T2_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ418EP-T2_GE3 FAQ
1.How can I place an order for SQJ418EP-T2_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ418EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ418EP-T2_GE3 reliable?
The price and inventory of SQJ418EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ418EP-T2_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ418EP-T2_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ418EP-T2_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ418EP-T2_GE3?
SQJ418EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ418EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ418EP-T2_GE3?
For technical support, including SQJ418EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ418EP-T2_GE3 requirements.
6.How does Aetrix verify that SQJ418EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ418EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ418EP-T2_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ418EP-T2_GE3?
All SQJ418EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ418EP-T2_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ418EP-T2_GE3 part is unused and in its original packaging.
Return procedure for SQJ418EP-T2_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQJ418EP-T2_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
