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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ420EP-T1_BE3

Name: SQJ420EP-T1_BE3
Brand: Vishay Siliconix
SKU: SQJ420EP-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ420EP-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ420EP-T1_BE3.pdf

Description:: N-CHANNEL 40-V (D-S) 175C MOSFET

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Product details

Overview

SQJ420EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 30 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It features R_DS(on) of 10.0 mΩ at V_GS = 10 V and 12.0 mΩ at V_GS = 4.5 V, housed in a leadless PowerPAK® SO-8L package. It serves as a high-efficiency synchronous rectifier or main switching element in 12 V/24 V automotive DC–DC converters and motor control circuits.

For engineers reviewing the SQJ420EP-T1_BE3 datasheet, SQJ420EP-T1_BE3 pinout, SQJ420EP-T1_BE3 application, or SQJ420EP-T1_BE3 equivalent, key selection considerations include its AEC-Q101 qualification, 100 % R_g and UIS testing, thermal performance with R_thJC = 3.3 °C/W, and suitability for high-reliability under-hood power stages requiring stable R_DS(on) up to 175 °C.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Q_g = 27–41 nC, Q_gd = 4.6 nC) supports efficient operation in hard-switched and synchronous buck topologies at frequencies up to 500 kHz.

The device integrates a robust body diode with t_rr = 28–60 ns and Q_rr = 25–50 nC, enabling reliable freewheeling in inductive loads. Its thermal design leverages the PowerPAK SO-8L's exposed-drain copper pad for low-junction-to-case resistance (3.3 °C/W), critical for sustained 30 A conduction in compact automotive modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage compatible with 24 V automotive systems including load dump transients.
R_DS(on) @ V_GS = 10 V	10.0 mΩ - Enables ≤ 9.0 W conduction loss at 30 A, supporting high-efficiency power stages without forced air cooling.
R_DS(on) @ V_GS = 4.5 V	12.0 mΩ - Ensures robust turn-on with standard 5 V logic-level gate drivers in battery-powered control units.
I_D (continuous)	30 A at T_C = 25 °C - Sustains full-rated current when mounted on 1"² FR4 PCB, suitable for high-power body control modules.
T_J operating range	−55 °C to +175 °C - Qualified for under-hood applications including engine bay DC–DC supplies and EPS motor drivers.
E_AS	39 mJ - Withstands single-pulse avalanche energy events common during inductive switching faults in automotive solenoid drivers.
R_thJC	3.3 °C/W - Low junction-to-case thermal resistance enables direct thermal coupling to metal-core PCBs or heatsinks in space-constrained modules.

Pinout & Package

Package: PowerPAK® SO-8L (leadless, exposed-drain thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (JEDEC MO-263AA). The bottom-side drain pad provides primary thermal path; solder fillet at copper tip not required per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8 (Drain pads)	Drain (D)	Electrically and thermally connected to internal die drain; forms primary heat dissipation surface on PCB bottom side.
5	Gate (G)	Control terminal; requires <1.36 Ω gate resistance to limit ringing; threshold voltage 1.5–2.5 V ensures compatibility with 3.3 V/5 V microcontrollers.
6	Source (S)	Power return node; tied to PCB source trace; body diode anode connects internally to this terminal.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD-HBM ≥ 2 kV - eliminates need for additional qualification by Tier-1 suppliers.
100 % R_g and UIS tested	Each unit screened for gate resistance (0.65–2.10 Ω) and unclamped inductive switching robustness - guarantees reliability in motor drive fault conditions.
Low Q_gd/Q_g ratio	Q_gd = 4.6 nC / Q_g ≈ 17 % - minimizes Miller effect, enabling stable high-speed switching with reduced gate drive power and dv/dt-induced shoot-through risk.
Thermally enhanced PowerPAK SO-8L	Exposed drain pad reduces R_thJC to 3.3 °C/W - allows >2× higher power density vs. standard SO-8 packages at same footprint.
Body diode t_rr < 60 ns	Fast reverse recovery (28–60 ns) limits switching losses and EMI in synchronous rectification - avoids need for external Schottky catch diodes.

Applications

Engine Control Unit (ECU) Power Supply	Automotive HVAC Blower Motor Driver
Use Scenario: High-efficiency 24 V input to 5 V/3.3 V auxiliary rail using synchronous buck converter. IC Role / Device Role / Timing Role: Primary high-side switch handling 15–25 A peak current with 300–500 kHz PWM frequency. Use Value: 10.0 mΩ R_DS(on) at 10 V gate drive minimizes conduction loss; 175 °C rating ensures stable operation near hot ECU housing.	Use Scenario: H-bridge driver for 12 V brushed blower motor with regenerative braking capability. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; body diode conducts reverse current during PWM off-time. Use Value: 28–60 ns t_rr and 25–50 nC Q_rr reduce switching loss and voltage spikes during commutation, improving EMC compliance.
Start-Stop System Battery Management	Electric Power Steering (EPS) Gate Driver Stage
Use Scenario: Bidirectional current sensing and protection circuit for 12 V LiFePO₄ auxiliary battery charging/discharging. IC Role / Device Role / Timing Role: Load switch controlling battery connection; must withstand 100 A pulsed current during cranking. Use Value: 110 A pulsed drain current (I_DM) and 39 mJ E_AS enable safe operation during cold-crank transients without derating.	Use Scenario: High-current gate driver output stage delivering >2 A peak current to IGBTs/MOSFETs in EPS torque assist module. IC Role / Device Role / Timing Role: Active clamp or level-shifting switch isolating gate drive signals from noisy motor phase voltages. Use Value: ±20 V V_GS rating and 100 % UIS testing ensure immunity to gate drive transients up to ±15 V in noisy EPS environments.

Engine Control Unit (ECU) Power Supply

Automotive HVAC Blower Motor Driver

Use Scenario: High-efficiency 24 V input to 5 V/3.3 V auxiliary rail using synchronous buck converter.

IC Role / Device Role / Timing Role: Primary high-side switch handling 15–25 A peak current with 300–500 kHz PWM frequency.

Use Value: 10.0 mΩ R_DS(on) at 10 V gate drive minimizes conduction loss; 175 °C rating ensures stable operation near hot ECU housing.

Use Scenario: H-bridge driver for 12 V brushed blower motor with regenerative braking capability.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; body diode conducts reverse current during PWM off-time.

Use Value: 28–60 ns t_rr and 25–50 nC Q_rr reduce switching loss and voltage spikes during commutation, improving EMC compliance.

Start-Stop System Battery Management

Electric Power Steering (EPS) Gate Driver Stage

Use Scenario: Bidirectional current sensing and protection circuit for 12 V LiFePO₄ auxiliary battery charging/discharging.

IC Role / Device Role / Timing Role: Load switch controlling battery connection; must withstand 100 A pulsed current during cranking.

Use Value: 110 A pulsed drain current (I_DM) and 39 mJ E_AS enable safe operation during cold-crank transients without derating.

Use Scenario: High-current gate driver output stage delivering >2 A peak current to IGBTs/MOSFETs in EPS torque assist module.

IC Role / Device Role / Timing Role: Active clamp or level-shifting switch isolating gate drive signals from noisy motor phase voltages.

Use Value: ±20 V V_GS rating and 100 % UIS testing ensure immunity to gate drive transients up to ±15 V in noisy EPS environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	Higher R_DS(on) (20 mΩ @ 10 V), TO-220 package, lower I_D (74 A pulsed but only 55 A continuous), no AEC-Q101 qualification.	Requires heatsink and larger PCB area; unsuitable for space-constrained AEC-Q101-compliant modules.	Select only for non-automotive industrial designs where qualification and footprint are not constraints.
STL220N4F7AG	Same 40 V rating, lower R_DS(on) (0.95 mΩ @ 10 V), PowerFLAT 5x6 package, AEC-Q101 qualified, but higher Q_g (65 nC).	Better conduction efficiency but slower switching; may require stronger gate driver due to higher total charge.	Prefer for ultra-low-loss DC–DC where switching frequency < 200 kHz; avoid if gate drive capability is limited.

Compared with IRF4905PbF and STL220N4F7AG, the SQJ420EP-T1_BE3 delivers optimal balance of low R_DS(on), fast switching (Q_gd/Q_g = 17 %), AEC-Q101 compliance, and compact PowerPAK SO-8L footprint - making it ideal for high-density, thermally constrained automotive power stages operating up to 500 kHz.

Availability

SQJ420EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and battery management systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQJ420EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJ420EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability under-hood applications demanding AEC-Q101 qualification, extended temperature operation, and robust avalanche performance.

FAQ

What is the maximum continuous drain current rating for SQJ420EP-T1_BE3 at 125 °C case temperature?

The SQJ420EP-T1_BE3 supports 26.8 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package under high ambient conditions and confirms its suitability for sustained operation in engine compartment environments where case temperatures routinely exceed 100 °C. The SQJ420EP-T1_BE3 maintains stable R_DS(on) up to 175 °C junction temperature.

Is SQJ420EP-T1_BE3 qualified to AEC-Q101, and what tests does that include?

Yes, the SQJ420EP-T1_BE3 is fully AEC-Q101 qualified. This includes stress testing per the AEC-Q101 standard such as high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and human-body model electrostatic discharge (HBM) ≥ 2 kV. Vishay documentation confirms 100 % R_g and unclamped inductive switching (UIS) screening - all required for automotive power MOSFET qualification. The SQJ420EP-T1_BE3 meets these requirements as a production part.

What is the gate threshold voltage range for SQJ420EP-T1_BE3, and how does it affect drive compatibility?

The SQJ420EP-T1_BE3 has a gate threshold voltage (V_GS(th)) range of 1.5 V to 2.5 V at I_D = 250 μA, ensuring reliable turn-on with standard 3.3 V and 5 V logic-level gate drivers. This low threshold supports direct interfacing with automotive microcontrollers and gate driver ICs without level-shifting. The SQJ420EP-T1_BE3 achieves full enhancement (R_DS(on) ≤ 12.0 mΩ) at V_GS = 4.5 V, making it compatible with widely used 5 V supply rails in body control modules.

Can SQJ420EP-T1_BE3 be used in synchronous rectification applications, and what body diode parameters support this?

Yes, the SQJ420EP-T1_BE3 is well-suited for synchronous rectification due to its fast, low-loss body diode: forward voltage V_SD = 0.79–1.2 V at I_F = 7 A, reverse recovery time t_rr = 28–60 ns, and reverse recovery charge Q_rr = 25–50 nC. These values minimize conduction and switching losses during freewheeling, reducing heat generation and improving efficiency over Schottky alternatives in 12 V/24 V DC–DC converters. The SQJ420EP-T1_BE3 body diode is integral to its function in buck and flyback topologies.

What is the thermal resistance from junction to case (R_thJC) for SQJ420EP-T1_BE3, and why is it important for layout?

The SQJ420EP-T1_BE3 has a junction-to-case thermal resistance (R_thJC) of 3.3 °C/W, measured from die junction to the exposed drain pad on the bottom of the PowerPAK SO-8L package. This low value is critical because it defines the dominant thermal path - heat must be conducted through the soldered drain pad into the PCB's inner copper layers or an attached heatsink. Layout must maximize copper area and thermal vias under the drain pad; the SQJ420EP-T1_BE3 thermal performance depends directly on this interface, not ambient convection.

SQJ420EP-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ420EP-T1_BE3 FAQ

1.How can I place an order for SQJ420EP-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ420EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ420EP-T1_BE3 reliable?

The price and inventory of SQJ420EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ420EP-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQJ420EP-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ420EP-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ420EP-T1_BE3?

SQJ420EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ420EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ420EP-T1_BE3?

For technical support, including SQJ420EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ420EP-T1_BE3 requirements.

6.How does Aetrix verify that SQJ420EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQJ420EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ420EP-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQJ420EP-T1_BE3?

All SQJ420EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ420EP-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ420EP-T1_BE3 part is unused and in its original packaging.

Return procedure for SQJ420EP-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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