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Vishay Siliconix SQJ420EP-T1_GE3
- Part No.:
- SQJ420EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ420EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 30A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,592
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Product details
Overview
SQJ420EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 30 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It features RDS(on) of 10.0 mΩ at VGS = 10 V and 12.0 mΩ at VGS = 4.5 V, and is qualified to AEC-Q101 for under-hood power switching in DC-DC converters, motor drivers, and load switches.
For engineers reviewing the SQJ420EP-T1_GE3 datasheet, SQJ420EP-T1_GE3 pinout, SQJ420EP-T1_GE3 application, or SQJ420EP-T1_GE3 equivalent, key selection criteria include its PowerPAK® SO-8L leadless package, 100 % Rg and UIS tested reliability, thermal resistance RthJC = 3.3 °C/W, and body diode recovery characteristics (trr = 28–60 ns, Qrr = 25–50 nC) critical for synchronous rectification and high-frequency switching.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance with robust avalanche capability (EAS = 39 mJ, IAS = 28 A). Its gate threshold voltage (VGS(th) = 1.5–2.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drive, while total gate charge (Qg = 27–41 nC) supports efficient switching up to several hundred kHz.
The device integrates a fast, low-VSD body diode (VSD = 0.79–1.2 V at IF = 7 A) with reverse recovery time optimized for hard-switched topologies. Thermal design is enabled by its low RthJC = 3.3 °C/W and RthJA = 70 °C/W (PCB mount), and it operates across -55 °C to +175 °C junction temperature range-meeting stringent automotive ambient requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage; suitable for 24 V automotive systems with transient margin. |
| RDS(on) @ VGS = 10 V | 10.0 mΩ - Enables <1 W conduction loss at 10 A, reducing heatsink requirements in compact modules. |
| RDS(on) @ VGS = 4.5 V | 12.0 mΩ - Ensures stable on-state performance with 5 V microcontroller gate drive without level-shifting. |
| ID (continuous) | 30 A @ TC = 25 °C - Supports high-current loads such as HVAC blowers or solenoid drivers in engine control units. |
| EAS | 39 mJ - Confirmed single-pulse avalanche energy rating; allows safe operation during inductive load switching transients. |
| trr / Qrr | 28–60 ns / 25–50 nC - Low reverse recovery charge minimizes switching losses and EMI in synchronous buck stages. |
| RthJC | 3.3 °C/W - Enables direct thermal coupling to heatsinks or copper planes, supporting >30 W power dissipation with minimal ΔT. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, surface-mount, dual-side thermal pad). Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H); exposed drain copper on bottom side for enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications. |
| 5 (G) | Gate | Single gate input with Rg = 0.65–2.10 Ω; optimized for controlled turn-on/turn-off with minimal ringing. |
| 6, 7, 8 (D) | Drain | Three drain terminals connected to bottom-exposed copper pad; provides low-inductance, high-current path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD-ensuring long-term reliability in harsh environments. |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness-eliminates field failures due to latent parametric drift. |
| Low Qgd/Qgs ratio | Qgd = 4.6 nC, Qgs = 4.6 nC - Balanced Miller charge reduces risk of shoot-through in half-bridge configurations. |
| Enhanced body diode softness | IRM(REC) = –1.8 A, ta/tb = 18/10 ns - Controlled reverse recovery minimizes voltage overshoot and snubber losses. |
| Thermally optimized PowerPAK® SO-8L | Bottom-side exposed drain pad enables direct thermal interface to PCB copper; RthJC = 3.3 °C/W supports high-power density designs. |
Applications
| Automotive DC-DC Converters | Engine Control Unit (ECU) Load Switching |
|---|---|
|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V buck converter supplying microcontrollers and sensors in modern ECUs. IC Role / Device Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve efficiency above 85 %. Use Value: RDS(on) = 12.0 mΩ at 4.5 V gate drive enables full-load efficiency gains of 2–3 % over diode-based solutions at 10–20 A output. |
Use Scenario: High-side power switch controlling fuel injector, ignition coil, or radiator fan in engine bay modules. IC Role / Device Role: Robust N-channel high-side switch driven via charge pump or gate driver IC. Use Value: AEC-Q101 qualification and 175 °C TJ(max) ensure uninterrupted operation under hood temperatures exceeding 125 °C ambient. |
| Electric Power Steering (EPS) Motor Drivers | On-Board Charger (OBC) Auxiliary Supplies |
|
Use Scenario: Half-bridge leg in 3-phase inverter driving 24 V EPS assist motor with PWM frequencies up to 20 kHz. IC Role / Device Role: Low-RDS(on), low-Qg power switch enabling fast, low-loss commutation. Use Value: Qg = 27–41 nC and tf = 5–10 ns allow clean switching with minimal gate drive power and reduced EMI filtering burden. |
Use Scenario: Primary-side switch in auxiliary flyback or forward converter powering OBC control circuitry from 400 V battery rail. IC Role / Device Role: High-reliability 40 V switch handling start-up surges and transient overloads. Use Value: 39 mJ EAS and 28 A IAS withstand repeated inductive turn-off events during fault conditions without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 1.45 mΩ @ 10 V (lower), but rated only to 150 °C TJ; no AEC-Q101 documentation publicly confirmed. | Higher current density but limited thermal margin for sustained 175 °C operation; not validated for automotive under-hood use. | Select SQJ420EP-T1_GE3 when full AEC-Q101 compliance and 175 °C operation are mandatory. |
| IRF7470PBF | SO-8 package (not leadless); RDS(on) = 12.5 mΩ @ 10 V; RthJA = 62 °C/W (higher); no AEC-Q101 qualification stated. | Legacy through-hole-compatible footprint; higher thermal resistance limits power density; lacks automotive stress validation. | Choose SQJ420EP-T1_GE3 for space-constrained, thermally demanding automotive PCBs requiring AEC-Q101 assurance. |
Compared with STL220N4F7AG and IRF7470PBF, SQJ420EP-T1_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, PowerPAK® SO-8L thermal performance (RthJC = 3.3 °C/W), and verified UIS robustness-making it the preferred choice for safety-critical, high-temperature automotive power stages where long-term reliability is non-negotiable.
Availability
SQJ420EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and high-reliability load switching requiring stable component supply, full traceability, and lifecycle continuity support.
Supply support for SQJ420EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJ420EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-efficiency, high-temperature switching in engine control, ADAS, and electrified vehicle subsystems.
FAQ
What is the maximum junction temperature rating for SQJ420EP-T1_GE3?
The SQJ420EP-T1_GE3 is rated for a maximum junction temperature of +175 °C, fully aligned with AEC-Q101 requirements for under-hood automotive applications. This rating is validated across all operating conditions, including continuous conduction and pulsed avalanche events, and enables reliable operation in environments where ambient temperatures exceed 125 °C.
Is SQJ420EP-T1_GE3 qualified to AEC-Q101?
Yes, SQJ420EP-T1_GE3 is explicitly qualified to AEC-Q101 Rev. D, covering stress tests including high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and electrostatic discharge (ESD). Full qualification data is documented in Vishay's reliability reports for this part number.
What package type does SQJ420EP-T1_GE3 use, and how does it impact thermal performance?
SQJ420EP-T1_GE3 uses the PowerPAK® SO-8L leadless package with an exposed drain pad on the bottom side. This construction delivers RthJC = 3.3 °C/W-significantly lower than standard SO-8-enabling efficient heat transfer to the PCB ground plane or external heatsink without solder voiding concerns typical of thermal vias.
Does SQJ420EP-T1_GE3 have a specified body diode reverse recovery time?
Yes, SQJ420EP-T1_GE3 specifies body diode reverse recovery time trr = 28–60 ns (typ./max.) at IF = 5 A and di/dt = 100 A/μs. Its associated Qrr = 25–50 nC and soft recovery profile (ta/tb = 18/10 ns) are characterized for use in synchronous rectification and hard-switched topologies where diode behavior directly impacts efficiency and EMI.
What is the gate threshold voltage range for SQJ420EP-T1_GE3, and how does it affect drive compatibility?
The gate threshold voltage VGS(th) for SQJ420EP-T1_GE3 is specified as 1.5–2.5 V at ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers, while maintaining sufficient noise margin to prevent spurious conduction in electrically noisy automotive environments.
SQJ420EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1860 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ420EP-T1_GE3 FAQ
1.How can I place an order for SQJ420EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ420EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ420EP-T1_GE3 reliable?
The price and inventory of SQJ420EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ420EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ420EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ420EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ420EP-T1_GE3?
SQJ420EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ420EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ420EP-T1_GE3?
For technical support, including SQJ420EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ420EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ420EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ420EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ420EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ420EP-T1_GE3?
All SQJ420EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ420EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ420EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ420EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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