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Vishay Siliconix SQJ422EP-T1_BE3
- Part No.:
- SQJ422EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ422EP-T1_BE3.pdf
- Description:
- MOSFET N-CH 40V 75A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,765
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Product details
Overview
SQJ422EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 40 V VDS, 75 A continuous drain current at TC = 25 °C, and RDS(on) of 3.4 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a PowerPAK® SO-8L package, designed for high-efficiency DC-DC converters and motor control in engine management systems.
For engineers reviewing the SQJ422EP-T1_BE3 datasheet, SQJ422EP-T1_BE3 pinout, SQJ422EP-T1_BE3 application, or SQJ422EP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, low gate charge (67 nC typ.), 100% Rg and UIS tested reliability, and thermal performance with RthJC = 1.8 °C/W - critical for under-hood automotive power stages.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous rectification and high-side/low-side switching configurations. Its 4.5 V gate drive capability enables compatibility with 5 V and 3.3 V microcontroller outputs, while the 1.5–2.5 V gate threshold ensures robust noise immunity in noisy automotive environments.
The device features integrated source-drain diode with VSD = 0.75 V (typ.) at IF = 12 A and supports repetitive avalanche energy up to 105 mJ. Thermal design is enabled by its low RthJC and validated mounting on FR4 PCBs per JEDEC standards, supporting stable operation across -55 °C to +175 °C ambient ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage suitable for 12 V and 24 V automotive battery rail applications |
| RDS(on) @ VGS = 10 V | 3.4 mΩ - Enables <1 W conduction loss at 75 A, reducing heatsink requirements in compact modules |
| RDS(on) @ VGS = 4.5 V | 4.3 mΩ - Ensures full enhancement with standard logic-level drivers, eliminating need for gate boosters |
| Qg | 67 nC (typ.) - Supports efficient 100–500 kHz switching in buck converters without excessive gate driver power loss |
| TJ max | +175 °C - Qualified for under-hood placement in engine control units and transmission control modules |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics including HTRB, HTGB, and temperature cycling |
| RthJC | 1.8 °C/W - Enables direct thermal coupling to heatsinks or metal-core PCBs for high-power density designs |
Pinout & Package
Package: PowerPAK® SO-8L (single-channel), surface-mount, lead (Pb)-free and halogen-free. Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H). Exposed drain pad on bottom side provides primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt switching |
| 5 (G) | Gate | Single gate input with 0.63 Ω typical gate resistance - minimizes ringing and simplifies RC snubber design |
| 6, 7, 8 (D) | Drain | Three drain terminals connected to large exposed copper pad - delivers low-inductance, high-current path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit (228 mΩ·nC) for high-frequency efficiency |
| 100% Rg and UIS tested | Ensures gate robustness against transient overvoltage and single-pulse avalanche survival up to 46 A |
| AEC-Q101 qualified | Validated for automotive use with zero defects in reliability stress tests across temperature, humidity, and bias conditions |
| Low Ciss/Coss ratio | 4616 pF / 420 pF - Improves hard-switching efficiency and reduces EMI generation in high-speed power stages |
| Enhanced thermal interface | Exposed drain pad with solderable copper - achieves 1.8 °C/W junction-to-case resistance when mounted per JEDEC 51-14 |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter (12 V → 5 V/3.3 V) |
|---|---|
|
Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems requiring precise pulse-width modulation at 1–10 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with fast turn-on (<19 ns) and turn-off (<44 ns) timing. Use Value: 3.4 mΩ RDS(on) minimizes power loss during extended duty cycles, while 175 °C rating supports operation near hot engine blocks. |
Use Scenario: Synchronous rectifier in isolated flyback or buck-boost converters powering infotainment and ADAS sensors. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300–500 kHz with low Qg enabling efficient gate drive from controller IC. Use Value: 67 nC total gate charge reduces driver losses; 4.3 mΩ RDS(on) at 4.5 V allows direct MCU GPIO control without level-shifting. |
| Electric Power Steering (EPS) Motor Phase Leg | Automotive HVAC Blower Motor Controller |
|
Use Scenario: Half-bridge high-side/low-side switching in 3-phase inverter driving brushless DC motors in EPS systems. IC Role / Device Role / Timing Role: Low-side MOSFET in phase-leg configuration handling peak currents >100 A with pulsed IDM = 300 A rating. Use Value: 105 mJ avalanche energy rating protects against inductive kickback during fault conditions; AEC-Q101 ensures long-term field reliability. |
Use Scenario: PWM-controlled blower motor driver in climate control systems requiring variable speed and reverse polarity protection. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch in H-bridge or single-ended topology with bidirectional current capability via body diode. Use Value: 0.75 V forward voltage (VSD) of integrated diode enables efficient freewheeling; 75 A continuous rating supports high-airflow fan loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A, RDS(on) = 1.6 mΩ @ 10 V, PowerFLAT 5×6 package, higher current but larger footprint | Better suited for high-current inverters where board space permits larger thermal pad area | Select STL220N4F7AG only if >150 A peak current and lower RDS(on) outweigh PCB area constraints |
| IRF7470PBF | 40 V, 60 A, RDS(on) = 4.5 mΩ @ 10 V, SO-8 package, non-AEC-Q101, higher RthJA = 70 °C/W | Limited to non-automotive industrial or consumer applications due to lack of automotive qualification | IRF7470PBF may be used in cost-sensitive non-automotive designs where AEC-Q101 is not required |
Compared with STL220N4F7AG and IRF7470PBF, the SQJ422EP-T1_BE3 offers optimal balance of current rating (75 A), thermal performance (RthJC = 1.8 °C/W), and AEC-Q101 compliance in a compact PowerPAK SO-8L footprint - making it preferred for space-constrained, thermally demanding automotive modules.
Availability
SQJ422EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply and long-term lifecycle support.
Supply support for SQJ422EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ422EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-current switching in engine bay and chassis-mounted electronic control modules.
FAQ
What is the maximum continuous drain current rating for SQJ422EP-T1_BE3 at 125 °C case temperature?
The SQJ422EP-T1_BE3 supports 62 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package under sustained high-temperature operation. Designers must verify PCB copper area and airflow to maintain safe junction temperatures below +175 °C in actual SQJ422EP-T1_BE3 implementations.
Is SQJ422EP-T1_BE3 suitable for synchronous rectification in a 400 kHz DC-DC converter?
Yes, the SQJ422EP-T1_BE3 is well-suited for synchronous rectification at 400 kHz due to its 67 nC typical total gate charge and low output capacitance (Coss = 420 pF typ.). These parameters minimize switching losses and enable clean turn-on/turn-off transitions. The SQJ422EP-T1_BE3 also features fast rise/fall times (10–15 ns / 8–12 ns) and low RDS(on), ensuring high efficiency in high-frequency buck and flyback topologies.
Does SQJ422EP-T1_BE3 have an integrated Schottky diode or only a body diode?
The SQJ422EP-T1_BE3 contains only the intrinsic MOSFET body diode - not an integrated Schottky diode. Its source-drain diode has a typical forward voltage of 0.75 V at IF = 12 A and VGS = 0 V. While not optimized for ultra-low VF, this diode is fully rated for continuous and pulsed conduction (ISM = 300 A), and its characteristics are characterized across temperature in the official datasheet for SQJ422EP-T1_BE3.
What is the gate-source voltage range supported by SQJ422EP-T1_BE3?
The SQJ422EP-T1_BE3 supports a gate-source voltage range of ±20 V, with absolute maximum rating of VGS = ±20 V. The gate threshold voltage is specified between 1.5 V and 2.5 V, and full enhancement is achieved at VGS = 4.5 V (RDS(on) = 4.3 mΩ) and VGS = 10 V (RDS(on) = 3.4 mΩ). This makes SQJ422EP-T1_BE3 compatible with both 3.3 V and 5 V logic-level drivers.
How is thermal performance validated for SQJ422EP-T1_BE3 in real PCB layouts?
Thermal performance of SQJ422EP-T1_BE3 is validated per JEDEC 51-14 using a 1" × 1" FR4 PCB with 2 oz. copper on both sides. Measured RthJA = 65 °C/W and RthJC = 1.8 °C/W assume full-solder coverage of the exposed drain pad. For SQJ422EP-T1_BE3, Vishay provides recommended minimum pad patterns (Doc. #63818) and solder profile guidance (Doc. #73257) to ensure repeatable thermal performance in production assemblies.
SQJ422EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5000 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ422EP-T1_BE3 FAQ
1.How can I place an order for SQJ422EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ422EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ422EP-T1_BE3 reliable?
The price and inventory of SQJ422EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ422EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ422EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ422EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ422EP-T1_BE3?
SQJ422EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ422EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ422EP-T1_BE3?
For technical support, including SQJ422EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ422EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ422EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ422EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ422EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ422EP-T1_BE3?
All SQJ422EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ422EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ422EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ422EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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