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Vishay Siliconix SQJ423EP-T1_BE3
- Part No.:
- SQJ423EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ423EP-T1_BE3.pdf
- Description:
- P-CHANNEL 40-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
SQJ423EP-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK® SO-8L package, rated for -40 V VDS, 0.014 Ω RDS(on) at VGS = -10 V, and -55 A continuous drain current at TC = 25 °C. It serves as a high-current load switch or reverse-polarity protection device in 12 V/24 V automotive power distribution systems.
For engineers reviewing the SQJ423EP-T1_BE3 datasheet, SQJ423EP-T1_BE3 pinout, SQJ423EP-T1_BE3 application, or SQJ423EP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, low gate charge (80–130 nC), and robust avalanche energy rating (80 mJ) - all critical for under-hood switching reliability.
Technical Context
This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching with controlled gate resistance (0.5–1.8 Ω). Its -40 V VDS rating supports standard automotive battery transients, while the -2.0 V typical VGS(th) ensures reliable turn-on with common 3.3 V or 5 V logic-level gate drivers.
The device integrates a body diode with -0.8 to -1.2 V forward voltage at -10 A, enabling synchronous rectification or freewheeling in high-side configurations. Thermal design is supported by RthJC = 2.2 °C/W and RthJA = 68 °C/W (PCB mount), validated per JEDEC JESD51-7 standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Withstands ISO 7637-2 pulse 5a (load dump) up to +40 V and negative transients in dual-battery systems. |
| RDS(on) @ VGS = -10 V | 0.014 Ω - Enables <1.4 W conduction loss at -55 A, reducing thermal stress in compact power modules. |
| Qg | 80–130 nC - Supports efficient PWM switching at 100–500 kHz with minimal gate driver power demand. |
| EAS | 80 mJ - Sustains single-pulse inductive energy without failure during relay coil de-energization or motor commutation. |
| TJ(max) | +175 °C - Certified for under-hood operation in engine control units, transmission control modules, and ADAS power stages. |
| AEC-Q101 | Qualified - Validated for automotive use per stress test requirements including HTGB, HTRB, and UIS. |
| ID (TC = 125 °C) | -31 A - Maintains usable current capacity at elevated ambient temperatures in sealed enclosures. |
Pinout & Package
Package: PowerPAK® SO-8L (single), surface-mount, lead (Pb)-free and halogen-free. Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H), with exposed drain pad on bottom side for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Common source connection; pins 1–4 are internally bonded to reduce source inductance and improve current sharing. |
| 5 (G) | Gate | Control input; requires ≤ ±20 V drive; gate resistance 0.5–1.8 Ω enables predictable turn-on/turn-off timing. |
| 6, 7, 8 (D) | Drain | High-current output node; pins 6–8 connect to large copper area for heat dissipation and low-inductance routing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 30 % lower RDS(on) vs. planar P-channel MOSFETs of same die size, improving power density in space-constrained ECUs. |
| 100 % Rg and UIS tested | Ensures gate robustness against ESD and in-circuit overvoltage, eliminating field failures due to gate oxide rupture. |
| Exposed drain thermal pad | Enables direct thermal coupling to PCB ground plane, achieving 2.2 °C/W junction-to-case resistance for stable high-power operation. |
| Low Qgd/Qg ratio | 0.275 (22/80 nC typical) - Reduces Miller effect, minimizing shoot-through risk in half-bridge configurations. |
| Body diode soft recovery | Reverse recovery time not specified, but VSD = -0.8 to -1.2 V at -10 A confirms optimized diode for low-loss freewheeling in DC-DC converters. |
Applications
| Engine Control Unit (ECU) Power Switching | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: High-side switching of fuel pump, radiator fan, or injector drivers in 12 V systems. IC Role / Device Role / Timing Role: P-channel MOSFET used as load switch with logic-level gate drive and fast turn-off (<80 ns delay). Use Value: Low RDS(on) minimizes I²R heating during continuous 30 A operation; AEC-Q101 qualification ensures 15-year field reliability. |
Use Scenario: Reverse-polarity protection for infotainment head units and lighting controllers. IC Role / Device Role / Timing Role: High-side protection switch placed between battery and system input, blocking reverse current during jump-start events. Use Value: -40 V VDS withstands -35 V reverse battery transients; 175 °C rating allows placement near heat-generating MCU components. |
| Transmission Control Module (TCM) | Advanced Driver Assistance Systems (ADAS) Power Management |
Use Scenario: Solenoid valve actuation in automatic transmission hydraulic control units. IC Role / Device Role / Timing Role: Fast-switching power switch driving inductive loads with integrated flyback path via body diode. Use Value: 80 mJ EAS safely clamps solenoid turn-off energy; low Qg enables precise 10–100 Hz PWM control without gate driver overheating. |
Use Scenario: Power sequencing and fault-isolation for radar sensor modules and camera ECUs. IC Role / Device Role / Timing Role: Current-limited hot-swap controller replacement using external sense resistor and gate control loop. Use Value: Tight VGS(th) tolerance (-1.5 to -2.5 V) enables accurate current-limit threshold setting; RthJC = 2.2 °C/W supports thermal shutdown integration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, -100 V VDS, 0.3 Ω RDS(on), no AEC-Q101 qualification | Higher voltage margin but 21× higher on-resistance; unsuitable for high-current automotive modules | Select only for non-automotive industrial 100 V applications requiring through-hole mounting. |
| DMTH4007LPSQ-13 | PowerDI 5060-8 package, -40 V, 0.012 Ω RDS(on) @ -10 V, AEC-Q101 qualified, 70 nC Qg | Lower gate charge and same voltage/current specs; slightly smaller footprint (5.0 × 6.0 mm) | Preferred where board space is constrained and faster switching is required; verify thermal pad layout compatibility. |
Compared with IRF9530NPBF, SQJ423EP-T1_BE3 delivers 21× lower conduction loss and automotive qualification; versus DMTH4007LPSQ-13, it trades 10 nC lower Qg for broader thermal pad area and proven high-current PCB thermal performance.
Availability
SQJ423EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive power distribution, engine management, and ADAS subsystems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SQJ423EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ423EP-T1_BE3 belongs to Vishay's TrenchFET® Automotive Power MOSFET family, engineered specifically for high-current, high-temperature switching in engine compartments and safety-critical vehicle subsystems.
FAQ
What is the maximum continuous drain current for SQJ423EP-T1_BE3 at 125 °C case temperature?
The SQJ423EP-T1_BE3 supports -31 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures safe operation in under-hood environments where ambient temperatures exceed 85 °C. The SQJ423EP-T1_BE3 maintains stable RDS(on) up to 175 °C junction temperature.
Does SQJ423EP-T1_BE3 require a gate driver IC for automotive 12 V applications?
The SQJ423EP-T1_BE3 has a typical gate threshold voltage of -2.0 V and can be driven directly by 3.3 V or 5 V microcontrollers when used in low-frequency switching (e.g., ignition control or lamp dimming). However, for PWM frequencies above 20 kHz or high-current loads (>20 A), a dedicated gate driver is recommended to ensure full enhancement and minimize switching losses. The SQJ423EP-T1_BE3 gate charge profile supports both scenarios.
Is SQJ423EP-T1_BE3 compatible with lead-free reflow soldering processes?
Yes, SQJ423EP-T1_BE3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak soldering temperature up to 260 °C. The PowerPAK SO-8L package uses matte tin plating and is designed for standard Pb-free profiles. Note that manual soldering with an iron is not recommended due to thermal mass and leadless construction - the SQJ423EP-T1_BE3 must be processed via reflow only.
How does the body diode of SQJ423EP-T1_BE3 perform in freewheeling applications?
The SQJ423EP-T1_BE3 body diode exhibits a forward voltage of -0.8 to -1.2 V at -10 A and VGS = 0 V, with soft recovery characteristics confirmed by typical waveform data in the datasheet. It is suitable for freewheeling in buck converters and motor drives, though external Schottky diodes may be added for ultra-low-loss designs. The SQJ423EP-T1_BE3 body diode is rated for -100 A pulsed current.
What is the thermal resistance from junction to case (RthJC) for SQJ423EP-T1_BE3?
The SQJ423EP-T1_BE3 has a junction-to-case thermal resistance (RthJC) of 2.2 °C/W, measured from die to the exposed drain pad. This value assumes proper soldering to a minimum 1" × 1" copper area on FR4 PCB per JEDEC 51-14. Effective heatsinking via the drain pad is essential to maintain TJ ≤ 175 °C under full-load conditions. The SQJ423EP-T1_BE3 thermal performance is validated for automotive under-hood use.
SQJ423EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ423EP-T1_BE3 FAQ
1.How can I place an order for SQJ423EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ423EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ423EP-T1_BE3 reliable?
The price and inventory of SQJ423EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ423EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ423EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ423EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ423EP-T1_BE3?
SQJ423EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ423EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ423EP-T1_BE3?
For technical support, including SQJ423EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ423EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ423EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ423EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ423EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ423EP-T1_BE3?
All SQJ423EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ423EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ423EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ423EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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