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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ431EP-T2_GE3

Name: SQJ431EP-T2_GE3
Brand: Vishay Siliconix
SKU: SQJ431EP-T2_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ431EP-T2_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ431EP-T2_GE3.pdf

Description:: MOSFET P-CH 200V 12A PPAK SO-8

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Product details

Overview

SQJ431EP-T2_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-voltage DC-DC conversion and load switching in 12 V/24 V systems. It features -200 V drain-source breakdown voltage, 0.213 Ω R_DS(on) at -10 V V_GS, -12 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification for under-hood applications.

For engineers reviewing the SQJ431EP-T2_GE3 datasheet, SQJ431EP-T2_GE3 pinout, SQJ431EP-T2_GE3 application, or SQJ431EP-T2_GE3 equivalent, this device is selected for high-side switching in automotive body control modules, reverse polarity protection circuits, and industrial power supplies requiring robust avalanche energy handling (80 mJ) and 175 °C junction operation.

Technical Context

This MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance with tight gate threshold voltage distribution (-2.5 V to -3.5 V). Its -200 V rating enables use in 48 V mild-hybrid architectures and industrial off-line supplies where transient overvoltage immunity is critical.

The PowerPAK® SO-8L package delivers 1.8 °C/W junction-to-case thermal resistance and supports bottom-side PCB copper thermal spreading. All units undergo 100 % R_g and UIS testing per AEC-Q101 requirements, ensuring reliability in repetitive avalanche conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Withstands 48 V system transients up to ISO 7637-2 Pulse 5a without clamping
R_DS(on) @ -10 V	0.213 Ω - Enables ≤ 3.1 W conduction loss at -12 A, supporting thermally constrained layouts
I_D (continuous)	-12 A @ T_C = 25 °C - Sustains full rated current with minimal heatsinking on 1"² FR4 PCB
E_AS	80 mJ - Absorbs single-pulse inductive energy from solenoid or motor loads without failure
T_J range	-55 °C to +175 °C - Qualified for engine bay and transmission control unit environments
Q_g	71 nC typical - Compatible with standard gate drivers (e.g., TC4427) without excessive drive power
R_thJC	1.8 °C/W - Allows direct thermal coupling to metal-core PCBs or heatsinks for high-power density designs

Pinout & Package

Package: PowerPAK® SO-8L (single), 5.13 mm × 6.15 mm footprint, exposed-drain thermal pad, lead (Pb)-free and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source connection; pins 1–4 and 7–8 are internally bonded to reduce source inductance
5	Gate (G)	Control input; requires -10 V for full enhancement; ±20 V absolute max rating
6	Drain (D)	Main power terminal; connected to exposed copper thermal pad for low R_thJC

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive temperature cycling, HTRB, and UIS stress per Rev D test plan
100 % R_g tested	Ensures consistent gate drive timing and prevents shoot-through in half-bridge configurations
TrenchFET® structure	Delivers lower R_DS(on) × Q_g figure-of-merit than planar P-channel alternatives
Halogen-free	Complies with IEC 61249-2-21 and RoHS Directive 2002/95/EC for green manufacturing
Exposed drain pad	Enables direct thermal interface to PCB ground plane or heatsink, reducing junction temperature by up to 45 °C

Applications

Automotive Body Control Module	Industrial Reverse Polarity Protection
Use Scenario: High-side switch for rear lighting, HVAC actuators, and door lock solenoids in 12 V/24 V vehicle platforms. IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with integrated body diode for freewheeling. Use Value: Eliminates need for external flyback diode; 175 °C rating ensures operation near engine compartment heat sources.	Use Scenario: Input protection circuit for programmable logic controllers (PLCs) and motor drives powered from unregulated DC rails. IC Role / Device Role / Timing Role: Reverse-biased blocking element placed between power input and system ground. Use Value: -200 V V_DS withstands accidental 120 VAC transients; low R_DS(on) limits insertion loss to < 0.25 V at 10 A.
48 V Mild-Hybrid DC-DC Converter	Telecom Power Shelf Backup Switch
Use Scenario: High-side synchronous rectifier or pre-regulator switch in bidirectional 48 V–12 V converters. IC Role / Device Role / Timing Role: Main switching element in buck or buck-boost topology operating at 100–300 kHz. Use Value: 80 mJ E_AS handles leakage inductance spikes during hard-switching transitions without snubbers.	Use Scenario: OR-ing FET in redundant 48 V telecom power shelves with hot-swap capability. IC Role / Device Role / Timing Role: Low-loss pass element controlled by ideal diode controller (e.g., LTC4359). Use Value: 0.213 Ω R_DS(on) reduces conduction loss vs. Schottky diodes; 100 % UIS tested for fault tolerance during bus faults.

Automotive Body Control Module

Industrial Reverse Polarity Protection

Use Scenario: High-side switch for rear lighting, HVAC actuators, and door lock solenoids in 12 V/24 V vehicle platforms.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with integrated body diode for freewheeling.

Use Value: Eliminates need for external flyback diode; 175 °C rating ensures operation near engine compartment heat sources.

Use Scenario: Input protection circuit for programmable logic controllers (PLCs) and motor drives powered from unregulated DC rails.

IC Role / Device Role / Timing Role: Reverse-biased blocking element placed between power input and system ground.

Use Value: -200 V V_DS withstands accidental 120 VAC transients; low R_DS(on) limits insertion loss to < 0.25 V at 10 A.

48 V Mild-Hybrid DC-DC Converter

Telecom Power Shelf Backup Switch

Use Scenario: High-side synchronous rectifier or pre-regulator switch in bidirectional 48 V–12 V converters.

IC Role / Device Role / Timing Role: Main switching element in buck or buck-boost topology operating at 100–300 kHz.

Use Value: 80 mJ E_AS handles leakage inductance spikes during hard-switching transitions without snubbers.

Use Scenario: OR-ing FET in redundant 48 V telecom power shelves with hot-swap capability.

IC Role / Device Role / Timing Role: Low-loss pass element controlled by ideal diode controller (e.g., LTC4359).

Use Value: 0.213 Ω R_DS(on) reduces conduction loss vs. Schottky diodes; 100 % UIS tested for fault tolerance during bus faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPBF	TO-220 package; higher R_DS(on) (0.200 Ω @ -10 V but only at 25 °C); no AEC-Q101 qualification	Requires heatsink for >5 A; unsuitable for automotive under-hood mounting	Select when cost sensitivity outweighs thermal performance and automotive compliance
DMT6009LSD-13	PowerDI™ 5060 package; lower V_DS (-60 V); 0.009 Ω R_DS(on); not rated for >150 °C	Optimized for 12 V battery management; cannot replace SQJ431EP-T2_GE3 in 48 V or 200 V systems	Select only for low-voltage, high-current applications where voltage rating is secondary

Compared with IRF9540NPBF and DMT6009LSD-13, the SQJ431EP-T2_GE3 uniquely combines -200 V rating, AEC-Q101 qualification, and PowerPAK SO-8L thermal performance-making it the only viable option for space-constrained, high-reliability 48 V automotive power stages.

Availability

SQJ431EP-T2_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, industrial power protection, and telecom backup switching requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQJ431EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The SQJ431EP-T2_GE3 belongs to Vishay's Automotive TrenchFET® Power MOSFET product line, engineered specifically for high-voltage, high-temperature switching in next-generation vehicle electrification and industrial power systems.

FAQ

What is the maximum gate-source voltage rating for SQJ431EP-T2_GE3?

The SQJ431EP-T2_GE3 has a maximum gate-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. In practice, -10 V is used for full enhancement, while -6 V provides sufficient turn-on for many low-speed switching applications. The device's gate threshold voltage range of -2.5 V to -3.5 V ensures reliable turn-on even with driver output tolerances.

Is SQJ431EP-T2_GE3 suitable for use in a high-side switch configuration?

Yes, SQJ431EP-T2_GE3 is explicitly designed for high-side switching due to its P-channel architecture and -200 V V_DS rating. Its low R_DS(on) and 100 % UIS-tested construction allow safe operation with inductive loads like solenoids and motors. The PowerPAK SO-8L package's exposed drain pad simplifies thermal management when mounted on top-side copper pours.

Does SQJ431EP-T2_GE3 require a gate resistor for stability?

A gate resistor is recommended for SQJ431EP-T2_GE3 to control dV/dt and prevent oscillation during switching. Typical values range from 10 Ω to 100 Ω depending on drive strength and layout parasitics. The datasheet specifies R_g = 1.0 Ω for dynamic timing measurements, but real-world designs benefit from higher values to damp ringing and reduce EMI-especially in automotive environments.

How does the thermal performance of SQJ431EP-T2_GE3 compare to TO-220 P-channel MOSFETs?

SQJ431EP-T2_GE3 achieves 1.8 °C/W junction-to-case thermal resistance in the PowerPAK SO-8L package, outperforming most TO-220 P-channel devices (typically 2.5–3.5 °C/W). This allows higher power density without external heatsinks. When mounted on 1"² FR4 with 2 oz copper, its R_thJA is 65 °C/W-comparable to TO-220 with minimal heatsinking-while occupying less than 25 % of the board area.

Can SQJ431EP-T2_GE3 be used in place of N-channel MOSFETs with level-shifting circuitry?

No-SQJ431EP-T2_GE3 is a P-channel device intended for high-side switching without level shifters. Replacing an N-channel MOSFET with SQJ431EP-T2_GE3 would require redesigning the gate drive architecture, as P-channel devices turn on with negative V_GS. Its value lies in eliminating level-shift complexity in low-frequency, high-voltage applications-not in drop-in substitution for N-channel topologies.

SQJ431EP-T2_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 213mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 106 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4355 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ431EP-T2_GE3 FAQ

1.How can I place an order for SQJ431EP-T2_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ431EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ431EP-T2_GE3 reliable?

The price and inventory of SQJ431EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ431EP-T2_GE3 is usually 5 days.

3.What payment methods are accepted for SQJ431EP-T2_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ431EP-T2_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ431EP-T2_GE3?

SQJ431EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ431EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ431EP-T2_GE3?

For technical support, including SQJ431EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ431EP-T2_GE3 requirements.

6.How does Aetrix verify that SQJ431EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJ431EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ431EP-T2_GE3 meets industry standards.

7.What is the process for return or replacement of SQJ431EP-T2_GE3?

All SQJ431EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ431EP-T2_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ431EP-T2_GE3 part is unused and in its original packaging.

Return procedure for SQJ431EP-T2_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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