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Vishay Siliconix SQJ433EP-T1_BE3
- Part No.:
- SQJ433EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ433EP-T1_BE3.pdf
- Description:
- P-CHANNEL 30-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,997
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Product details
Overview
SQJ433EP-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK® SO-8L package, rated for -30 V drain-source voltage, 75 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It delivers RDS(on) of 8.1 mΩ at VGS = -10 V and 17.0 mΩ at VGS = -4.5 V, supporting high-efficiency power switching in engine control units and battery disconnect circuits.
For engineers reviewing the SQJ433EP-T1_BE3 datasheet, SQJ433EP-T1_BE3 pinout, SQJ433EP-T1_BE3 application, or SQJ433EP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS testing, thermal performance with RthJC = 1.8 °C/W, and compatibility with 4.5 V logic-level gate drive in space-constrained automotive PCB layouts.
Technical Context
This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching with Qg = 72–108 nC (VGS = -10 V, VDS = -15 V). Its gate threshold voltage range of -1.5 V to -2.5 V ensures reliable turn-on under low-voltage conditions while maintaining robust noise immunity.
The device integrates a body diode with VSD = -0.8 to -1.2 V at IF = -10 A and supports single-pulse avalanche energy up to 70 mJ. Its PowerPAK SO-8L leadless package enables high power density with bottom-side thermal pad contact and 83 W maximum power dissipation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | -30 V - Supports 24 V automotive systems with margin against load-dump transients |
| RDS(on) @ VGS = -10 V | 8.1 mΩ - Enables <1 W conduction loss at 75 A, critical for high-current DC/DC stages |
| RDS(on) @ VGS = -4.5 V | 17.0 mΩ - Ensures functional operation with standard 5 V microcontroller gate drive |
| ID Continuous (TC = 25 °C) | -75 A - Sustains peak motor driver or solenoid control currents without derating |
| TJ Max | +175 °C - Meets under-hood automotive thermal requirements per AEC-Q101 stress test profile |
| Qg Total | 72–108 nC - Determines gate driver sizing and switching loss in PWM applications up to 100 kHz |
| RthJC | 1.8 °C/W - Allows direct heatsinking via PCB copper pour or metal-core substrate for thermal management |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 6.15 mm × 5.13 mm × 1.07 mm (E = 6.15 mm, D = 5.13 mm, A = 1.07 mm), RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Common source connection with internal paralleling; soldered to large PCB ground plane for low-inductance return path |
| 5 (G) | Gate | Control terminal requiring <108 nC charge; routed away from noisy power traces to prevent false turn-on |
| 6, 7, 8 (D) | Drain | High-current drain node connected to thermal pad; requires full-solder coverage for RthJC = 1.8 °C/W performance |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UHAST per Rev. B specification |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® architecture | Enables 8.1 mΩ RDS(on) in SO-8L footprint-30 % lower than planar equivalents at same voltage rating |
| PowerPAK SO-8L package | Bottom-exposed drain pad provides 2× thermal conductivity vs. standard SO-8, enabling 83 W PD at TC = 25 °C |
| Low VGS(th) variation | Threshold voltage tightly distributed between -1.5 V and -2.5 V, ensuring predictable turn-on across temperature |
Applications
| Engine Control Unit (ECU) Power Switching | Battery Disconnect Module (BDM) |
|---|---|
Use Scenario: High-side switching of fuel injector drivers and ignition coils in 12 V/24 V diesel and gasoline ECUs. IC Role / Device Role / Timing Role: P-channel high-side switch controlling load current with logic-level gate drive from MCU GPIO. Use Value: 175 °C TJ rating and AEC-Q101 qualification ensure reliability in under-hood environments; 17.0 mΩ RDS(on) at -4.5 V enables direct MCU interface without level-shifting. |
Use Scenario: Isolation of 12 V starter battery from vehicle electronics during cranking or fault conditions. IC Role / Device Role / Timing Role: Bidirectional blocking switch managing reverse polarity protection and load dump suppression. Use Value: -30 V VDS rating accommodates ISO 7637-2 pulse 5a (120 V transient); 70 mJ EAS withstands inductive kickback from solenoid disconnection. |
| Transmission Control Module (TCM) | Electric Power Steering (EPS) Motor Driver |
Use Scenario: Solenoid valve actuation for hydraulic pressure control in automatic transmissions. IC Role / Device Role / Timing Role: Low-side or high-side switch driving inductive loads with PWM duty cycles up to 90 %. Use Value: 75 A ID rating supports peak solenoid currents; 1.8 °C/W RthJC allows thermal design with minimal copper area on double-sided FR4. |
Use Scenario: Half-bridge high-side switch in 3-phase EPS motor gate driver stage. IC Role / Device Role / Timing Role: Complementary P-channel switch paired with N-channel devices for bootstrap-free high-side drive. Use Value: Fast switching (td(on) = 17–26 ns, tf = 49–69 ns) reduces dead-time losses; Ciss = 3683–4877 pF enables stable gate drive with 6 Ω external resistor. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | TO-220 package, -100 V VDS, 12 mΩ RDS(on) @ -10 V, no AEC-Q101 qualification | Requires heatsink mounting and larger PCB area; unsuitable for under-hood automotive deployment | Select only for non-automotive industrial DC loads where higher voltage margin and legacy TO-220 layout exist |
| DMT3006LPS-13 | PowerDI™ 5060 package, -30 V VDS, 6.5 mΩ RDS(on) @ -10 V, AEC-Q101 qualified, but 60 A ID rating | Lower current capability limits use in >60 A solenoid or motor phases; smaller footprint reduces thermal mass | Prefer when board space is constrained and peak current stays below 60 A; verify RthJA = 45 °C/W thermal budget |
Compared with IRF9530NPbF and DMT3006LPS-13, SQJ433EP-T1_BE3 uniquely balances 75 A current handling, AEC-Q101 compliance, and PowerPAK SO-8L thermal efficiency-making it optimal for high-power automotive switches where both reliability and power density are mandatory.
Availability
SQJ433EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, battery disconnect modules, transmission control systems, and electric power steering applications requiring stable component supply across automotive production lifecycles.
Supply support for SQJ433EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power and signal components for automotive, industrial, and computing markets.
The SQJ433EP-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-current, high-temperature switching in safety-critical vehicle subsystems such as powertrain and chassis control.
FAQ
What is the gate threshold voltage range for SQJ433EP-T1_BE3?
The SQJ433EP-T1_BE3 has a gate-source threshold voltage (VGS(th)) range of -1.5 V to -2.5 V, measured at VDS = VGS and ID = -250 μA. This tight distribution ensures consistent turn-on behavior across temperature and process variation, supporting reliable operation in automotive microcontroller-driven circuits where gate drive voltage may vary between -4.5 V and -10 V. The SQJ433EP-T1_BE3 maintains stable switching even at the lower end of this range.
Is SQJ433EP-T1_BE3 suitable for high-frequency PWM applications?
Yes, SQJ433EP-T1_BE3 supports high-frequency PWM operation with documented switching parameters: turn-on delay td(on) = 17–26 ns, rise time tr = 21–31 ns, turn-off delay td(off) = 79–110 ns, and fall time tf = 49–69 ns (VDD = -20 V, Rg = 6 Ω). Its total gate charge Qg = 72–108 nC and input capacitance Ciss = 3683–4877 pF allow efficient gate driving up to 100 kHz in motor control and DC/DC converter topologies. The SQJ433EP-T1_BE3's low Crss minimizes Miller-induced shoot-through risk.
Does SQJ433EP-T1_BE3 have avalanche capability, and what is its rating?
SQJ433EP-T1_BE3 is rated for single-pulse avalanche with IAS = -40 A (L = 0.1 mH) and EAS = 70 mJ. This capability is verified per UIS test methodology and enables robust operation during inductive load switching events such as solenoid de-energization or motor phase commutation. The SQJ433EP-T1_BE3's avalanche rating is specified and production-tested-not just guaranteed by design-making it suitable for automotive applications where unclamped inductive energy must be safely absorbed without failure.
What is the thermal resistance from junction to case (RthJC) for SQJ433EP-T1_BE3?
The junction-to-case thermal resistance (RthJC) of SQJ433EP-T1_BE3 is 1.8 °C/W, measured from die junction to the exposed drain pad on the bottom of the PowerPAK SO-8L package. This low value enables effective heat transfer to a PCB copper pour or external heatsink, supporting 83 W maximum power dissipation at TC = 25 °C. For thermal design, the SQJ433EP-T1_BE3 requires full-solder coverage of the drain pad to achieve the specified RthJC; partial soldering degrades thermal performance.
How does SQJ433EP-T1_BE3 differ from standard SO-8 MOSFETs in terms of packaging and reliability?
SQJ433EP-T1_BE3 uses the PowerPAK® SO-8L-a leadless, thermally enhanced variant of SO-8-with an exposed copper drain pad on the bottom side instead of gull-wing leads. This eliminates lead inductance, improves thermal conduction by 2× over standard SO-8, and supports AEC-Q101 qualification including 100 % UIS and Rg screening. Unlike generic SO-8 MOSFETs, the SQJ433EP-T1_BE3 is explicitly designed for automotive under-hood use with guaranteed +175 °C operation and validated solder joint reliability per JEDEC J-STD-020.
SQJ433EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.1mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 108 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4877 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ433EP-T1_BE3 FAQ
1.How can I place an order for SQJ433EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ433EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ433EP-T1_BE3 reliable?
The price and inventory of SQJ433EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ433EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ433EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ433EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ433EP-T1_BE3?
SQJ433EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ433EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ433EP-T1_BE3?
For technical support, including SQJ433EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ433EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ433EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ433EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ433EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ433EP-T1_BE3?
All SQJ433EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ433EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ433EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ433EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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