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Vishay Siliconix SQJ443EP-T1_BE3
- Part No.:
- SQJ443EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ443EP-T1_BE3.pdf
- Description:
- P-CHANNEL 40-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,596
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Product details
Overview
SQJ443EP-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel TrenchFET® MOSFET rated for -40 V drain-source voltage, 0.029 Ω RDS(on) at -10 V gate drive, and -40 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is housed in a leadless PowerPAK® SO-8L package, targeting high-reliability power switching in automotive body control modules and load management systems.
For engineers reviewing the SQJ443EP-T1_BE3 datasheet, SQJ443EP-T1_BE3 pinout, SQJ443EP-T1_BE3 application, or SQJ443EP-T1_BE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, and real-world design context for automotive power distribution and reverse-polarity protection circuits.
Technical Context
This P-channel MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-side switch configurations. Its -2.0 V typical gate threshold voltage enables robust turn-on with standard 5 V or 3.3 V logic-level gate drivers, while its 1.8 °C/W junction-to-case thermal resistance supports high-power operation on thermally enhanced PCBs.
The device features 100 % Rg and UIS testing per AEC-Q101, with guaranteed avalanche energy of 39 mJ and pulsed drain current rating of -158 A. Its PowerPAK SO-8L package provides dual-sided copper exposure for bottom-side thermal conduction without requiring solder fillets at the exposed copper tips.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage for automotive 36 V nominal systems and load-dump transient tolerance |
| RDS(on) @ -10 V | 0.029 Ω - Enables ≤ 47 W conduction loss at -40 A, suitable for high-current DC loads |
| ID (continuous) | -40 A @ TC = 25 °C - Supports high-power solenoid, lamp, and motor driver applications |
| TJ range | -55 to +175 °C - Qualified for under-hood automotive environments including engine bay placement |
| EAS | 39 mJ - Withstands repetitive inductive switching stress in relay replacement and actuator control |
| RthJC | 1.8 °C/W - Enables direct thermal coupling to heatsink or copper plane for >60 W power dissipation |
| Qg | 38–57 nC - Optimized for efficient gate driving with low-power microcontrollers and dedicated gate drivers |
| AEC-Q101 | Qualified - Meets automotive reliability requirements for production vehicle electronics |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), FR-4 PCB mount with 2 oz. copper on both sides.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Common source connection tied to four internal die terminals; primary thermal path to PCB ground plane |
| 5, 6, 7, 8 (D) | Drain | Four parallel drain terminals forming main power output; electrically and thermally connected to exposed copper pad on bottom |
| 4 (G) | Gate | Single gate input terminal located adjacent to Source pins; requires <10.5 Ω gate resistance for stable switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lowest RDS(on) per mm² among Vishay's automotive P-channel MOSFETs in SO-8L footprint |
| AEC-Q101 qualification | Validated for automotive use with full stress testing including HTRB, HTGB, uHAST, and temperature cycling |
| 100 % Rg and UIS screening | Ensures gate robustness against ESD and inductive energy spikes during system startup/shutdown |
| PowerPAK SO-8L thermal design | Exposed drain pad on bottom enables >70 % of total power dissipation to transfer directly to PCB copper |
| High-temperature operation | Guaranteed RDS(on) performance up to +175 °C junction temperature, critical for engine compartment placement |
Applications
| Body Control Module (BCM) | Reverse-Polarity Protection |
|---|---|
Use Scenario: Controlling 12 V/24 V lighting, HVAC actuators, and door lock solenoids in modern BCMs. IC Role / Device Role / Timing Role: High-side P-channel switch replacing mechanical relays for zero-crossing-free load activation. Use Value: Reduces system size and acoustic noise while enabling PWM dimming and diagnostic current sensing via RDS(on). | Use Scenario: Protecting infotainment head units, ADAS cameras, and telematics modules from battery misconnection. IC Role / Device Role / Timing Role: Low-loss series pass element placed between battery input and downstream DC/DC converter input. Use Value: Limits forward voltage drop to ≤0.8 V at 5 A, minimizing heat generation and preserving system efficiency during normal operation. |
| Engine Management System | Electric Power Steering (EPS) |
Use Scenario: Driving fuel injector drivers and ignition coil pre-drivers in engine control units. IC Role / Device Role / Timing Role: Fast-switching high-side switch handling repetitive 10–100 Hz pulse trains with tight timing margins. Use Value: Achieves <11 ns turn-on delay and <45 ns fall time, supporting precise injection timing and closed-loop spark control. | Use Scenario: Managing auxiliary power rails for EPS motor controllers and torque sensor interfaces. IC Role / Device Role / Timing Role: Fault-tolerant power switch with integrated avalanche capability for motor phase fault clamping. Use Value: Absorbs 39 mJ single-pulse avalanche energy without failure, preventing catastrophic damage during motor stall events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, higher RDS(on) (0.3 Ω), lower ID (-12 A), no AEC-Q101 qualification | Requires heatsink; unsuitable for space-constrained automotive modules or high-reliability production | Select only for non-automotive prototyping where thermal mass compensates for higher conduction loss |
| DMT4001SPS-13 | PowerDI 5060 package, RDS(on) = 0.032 Ω @ -10 V, ID = -30 A, AEC-Q101 qualified | Lower current rating and different footprint; requires PCB redesign but offers comparable thermal performance | Choose when board area is constrained and peak current remains below 30 A |
Compared with IRF9530NPBF and DMT4001SPS-13, the SQJ443EP-T1_BE3 delivers superior current density (40 A in 31.5 mm²), best-in-class RDS(on), and full automotive qualification-making it the preferred choice for production BCM, EPS, and engine management designs requiring compact, reliable high-side switching.
Availability
SQJ443EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive body control modules, reverse-polarity protection circuits, and engine management systems requiring stable component supply across multi-year production cycles.
Supply support for SQJ443EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ443EP-T1_BE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK SO-8L family, engineered specifically for high-current, high-temperature power switching in next-generation vehicle electronics where space, thermal performance, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum junction temperature rating for SQJ443EP-T1_BE3?
The SQJ443EP-T1_BE3 has a specified operating junction temperature range of -55 °C to +175 °C. This rating is validated per AEC-Q101 stress testing and guarantees stable RDS(on) performance and reliability in under-hood automotive environments. The +175 °C limit allows placement near heat sources such as engines or power converters without derating concerns.
Is SQJ443EP-T1_BE3 pin-compatible with other PowerPAK SO-8L P-channel MOSFETs?
The SQJ443EP-T1_BE3 uses the standard PowerPAK SO-8L single-outline footprint defined in Vishay document 66934. Pin assignments (1–4 = Source, 5–8 = Drain, Gate at pin 4) match industry-standard layouts for this package. However, direct pin compatibility with other vendors' SO-8L devices must be confirmed individually-SQJ443EP-T1_BE3 itself is not documented as a drop-in replacement for non-Vishay parts.
Does SQJ443EP-T1_BE3 require a gate resistor for safe operation?
Yes, SQJ443EP-T1_BE3 benefits from an external gate resistor to control dV/dt and prevent oscillation. Its specified gate resistance is 3.15–10.5 Ω, and typical design practice uses 4.7–10 Ω in series with the gate driver. This ensures stable turn-on/turn-off behavior, minimizes EMI, and protects the gate oxide during fast switching in automotive power applications.
What is the avalanche energy rating of SQJ443EP-T1_BE3 and how is it used in circuit design?
The SQJ443EP-T1_BE3 is rated for 39 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH. This parameter defines the maximum inductive energy the device can safely absorb during unclamped inductive switching events-such as motor stall or solenoid de-energization. Designers use this value to verify margin against worst-case system inductance and current, ensuring robustness without external snubbers.
How does the PowerPAK SO-8L package of SQJ443EP-T1_BE3 improve thermal performance compared to traditional SO-8?
The PowerPAK SO-8L package of SQJ443EP-T1_BE3 eliminates leads and exposes the drain copper on the bottom surface, reducing RthJC to 1.8 °C/W-over 3× better than leaded SO-8 equivalents. This enables >70 % of heat to flow directly into the PCB's inner copper layers, allowing higher continuous current (40 A) without external heatsinks and improving long-term reliability in thermally demanding automotive applications.
SQJ443EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2030 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ443EP-T1_BE3 FAQ
1.How can I place an order for SQJ443EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ443EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ443EP-T1_BE3 reliable?
The price and inventory of SQJ443EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ443EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ443EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ443EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ443EP-T1_BE3?
SQJ443EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ443EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ443EP-T1_BE3?
For technical support, including SQJ443EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ443EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ443EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ443EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ443EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ443EP-T1_BE3?
All SQJ443EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ443EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ443EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ443EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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