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Vishay Siliconix SQJ443EP-T2_GE3
- Part No.:
- SQJ443EP-T2_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ443EP-T2_GE3.pdf
- Description:
- P-CHANNEL 40-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:11,528
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Product details
Overview
SQJ443EP-T2_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK® SO-8L package, rated for -40 V drain-source voltage, 0.029 Ω RDS(on) at VGS = -10 V, and -40 A continuous drain current at TC = 25 °C. It serves as a high-efficiency high-side load switch in 12 V automotive power distribution systems.
For engineers reviewing the SQJ443EP-T2_GE3 datasheet, SQJ443EP-T2_GE3 pinout, SQJ443EP-T2_GE3 application, or SQJ443EP-T2_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, and real-world design context for automotive body electronics and power management circuits.
Technical Context
This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 38–57 nC). Its -1.5 to -2.5 V gate threshold voltage enables direct interface with standard 3.3 V/5 V logic controllers in high-side configurations.
The device features 100 % Rg and UIS tested reliability, junction temperature range of -55 °C to +175 °C, and thermal resistance RthJC = 1.8 °C/W - enabling robust operation in under-hood environments where PCB-mounted thermal dissipation must be tightly managed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - supports full automotive battery transients up to ISO 7637-2 Pulse 5a (-75 V clamp). |
| RDS(on) @ VGS = -10 V | 0.029 Ω - enables ≤ 47 W conduction loss at -40 A, critical for high-current door module or seat control switches. |
| ID Continuous | -40 A @ TC = 25 °C - sustains peak loads in HVAC blower or window lift motor drivers without derating. |
| Qg | 38–57 nC - balances switching speed and gate drive power; compatible with standard automotive gate drivers (e.g., UCC27531). |
| TJ Range | -55 °C to +175 °C - qualified per AEC-Q101 for engine bay and transmission control unit mounting locations. |
| EAS | 39 mJ - withstands inductive kickback from solenoids and relays without external snubbers. |
| RthJC | 1.8 °C/W - allows direct heatsinking to metal chassis or copper pour, reducing thermal path complexity. |
Pinout & Package
PowerPAK® SO-8L single-package outline measures 5.13 mm × 6.15 mm × 1.07 mm (L × W × H), with exposed drain pad on bottom side for enhanced thermal conduction. The leadless construction requires reflow-only assembly per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; six parallel pins reduce bond wire inductance and improve current sharing. |
| 5 | Gate (G) | Single-point gate input; low Rg (3.15–10.5 Ω) minimizes ringing during PWM switching. |
| 6 | Drain (D) | Exposed copper drain pad on bottom surface - primary thermal and current path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use across temperature, humidity, and mechanical shock profiles - eliminates need for additional qualification testing. |
| TrenchFET® architecture | Delivers 23 % lower RDS(on) vs. planar P-channel equivalents at same die size - reduces board area and thermal footprint. |
| 100 % Rg and UIS tested | Ensures gate robustness against ESD and unclamped inductive switching stress - critical for relay replacement in junction boxes. |
| Low Qgd/Qgs ratio | 9 nC / 6 nC = 1.5 - improves Miller immunity and enables stable 100 kHz+ PWM operation in LED matrix drivers. |
| VGS(th) tolerance | -1.5 V to -2.5 V - guarantees turn-on at 3.3 V logic while preventing false triggering from noise in 12 V systems. |
Applications
| Body Control Module (BCM) | Seat Motor Control |
|---|---|
Use Scenario: High-side switching of interior lighting, mirror heaters, and door lock actuators in 12 V BCMs. IC Role / Device Role / Timing Role: P-channel MOSFET used as load switch with active-low enable; operates in static on/off mode with <1 ms transition time. Use Value: 0.029 Ω RDS(on) limits voltage drop to <1.16 V at 40 A, preserving headroom for downstream 5 V regulators. |
Use Scenario: Bidirectional current control for reversible DC seat motors using dual high-side configuration. IC Role / Device Role / Timing Role: High-side switch in H-bridge half-bridge leg; handles pulsed 30 A stall currents with <50 ns fall time. Use Value: 39 mJ EAS absorbs energy from motor back-EMF during sudden stop, eliminating need for external TVS diodes. |
| HVAC Blower Driver | Engine Bay Junction Box |
Use Scenario: PWM-controlled blower motor supply in climate control systems operating up to 85 °C ambient. IC Role / Device Role / Timing Role: High-side switch modulated at 25 kHz; gate driven by isolated PWM signal from MCU. Use Value: RthJC = 1.8 °C/W enables direct thermal coupling to aluminum heat spreader, maintaining TJ < 150 °C at 20 A RMS. |
Use Scenario: Centralized power distribution for engine sensors, fuel injectors, and ignition coils. IC Role / Device Role / Timing Role: Fault-tolerant high-side switch with integrated current sensing via RDS(on) monitoring. Use Value: -175 °C max junction rating supports placement near exhaust manifolds; 100 % UIS test ensures survival during load dump events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | TO-220 package, RDS(on) = 0.3 Ω @ -10 V, 10× higher on-resistance, no AEC-Q101 qualification. | Requires heatsink and larger PCB area; unsuitable for under-hood automotive use due to temperature and qualification gaps. | Select only for non-automotive industrial prototypes where cost outweighs thermal density and qualification requirements. |
| DMT4005LPS-13 | PowerDI 5060 package, RDS(on) = 0.032 Ω @ -10 V, AEC-Q101 qualified, but RthJC = 2.5 °C/W and lower ID = -30 A. | Limited to lower-current modules (e.g., mirror fold circuits); less margin for transient overloads in junction box designs. | Prefer when board space is constrained and thermal budget allows 0.7 °C/W higher junction-to-case resistance. |
Compared with IRF9530NPbF and DMT4005LPS-13, SQJ443EP-T2_GE3 delivers the lowest RDS(on), highest current rating, and tightest thermal resistance in an AEC-Q101-qualified 5 mm × 6 mm footprint - making it optimal for space-constrained, high-reliability automotive power nodes.
Availability
SQJ443EP-T2_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, power distribution units, and motor control systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SQJ443EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJ443EP-T2_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V and 24 V vehicle electrical architectures.
FAQ
What is the maximum allowable gate-source voltage for SQJ443EP-T2_GE3?
The absolute maximum gate-source voltage for SQJ443EP-T2_GE3 is ±20 V. Exceeding this rating risks permanent gate oxide damage. Designers should limit drive voltage to -10 V for full enhancement and avoid negative spikes beyond -20 V using clamping Zener diodes in high-noise environments like engine compartments.
Does SQJ443EP-T2_GE3 support bidirectional current flow in circuit design?
SQJ443EP-T2_GE3 supports reverse current through its intrinsic body diode (VSD = -0.8 to -1.2 V at -5 A), but it is not designed for sustained bidirectional conduction. For true bidirectional switching, two SQJ443EP-T2_GE3 devices in series back-to-back are required - a common topology in seat motor H-bridges.
How does the PowerPAK SO-8L package of SQJ443EP-T2_GE3 affect PCB layout?
The PowerPAK SO-8L package of SQJ443EP-T2_GE3 requires a dedicated thermal pad (4.061 mm × 2.310 mm minimum) connected to a large internal ground plane. Solder mask defined pads are recommended to prevent bridging, and stencil aperture should be 80 % open to control solder volume and avoid voiding under the exposed drain.
Is SQJ443EP-T2_GE3 suitable for use in 24 V commercial vehicle systems?
Yes - SQJ443EP-T2_GE3 is rated for -40 V VDS, providing 16 V headroom above nominal 24 V systems and surviving ISO 16750-2 load dump transients up to -60 V. Its -55 °C to +175 °C operating range also meets commercial truck under-hood requirements.
What is the typical gate charge profile of SQJ443EP-T2_GE3 and how does it impact driver selection?
SQJ443EP-T2_GE3 has Qg = 38–57 nC, Qgs = 6 nC, and Qgd = 9 nC. This profile supports gate drivers capable of ≥1 A peak sink/source current (e.g., TC4427) to achieve <20 ns rise/fall times. Lower-current drivers will increase switching losses proportionally to Qg/Idrive.
SQJ443EP-T2_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2030 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ443EP-T2_GE3 FAQ
1.How can I place an order for SQJ443EP-T2_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ443EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ443EP-T2_GE3 reliable?
The price and inventory of SQJ443EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ443EP-T2_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ443EP-T2_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ443EP-T2_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ443EP-T2_GE3?
SQJ443EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ443EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ443EP-T2_GE3?
For technical support, including SQJ443EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ443EP-T2_GE3 requirements.
6.How does Aetrix verify that SQJ443EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ443EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ443EP-T2_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ443EP-T2_GE3?
All SQJ443EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ443EP-T2_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ443EP-T2_GE3 part is unused and in its original packaging.
Return procedure for SQJ443EP-T2_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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