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Vishay Siliconix SQJ444EP-T1_BE3
- Part No.:
- SQJ444EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ444EP-T1_BE3.pdf
- Description:
- N-CHANNEL 40-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
SQJ444EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 60 A continuous drain current at TC = 25 °C, and RDS(on) of 3.2 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ444EP-T1_BE3 datasheet, SQJ444EP-T1_BE3 pinout, SQJ444EP-T1_BE3 application, or SQJ444EP-T1_BE3 equivalent, key selection criteria include its 2.2 °C/W junction-to-case thermal resistance, 51 nC total gate charge, 100% Rg and UIS tested reliability, and PowerPAK® SO-8L leadless package optimized for high-current automotive power stages.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qgd/Qgs ratio (7 nC / 9 nC), supporting efficient synchronous rectification and PWM-driven loads. Its 3700 pF input capacitance and 2310 pF output capacitance are characterized at VDS = 25 V, f = 1 MHz.
The device integrates a robust body diode with 150 A pulsed source current rating and 0.8–1.2 V forward voltage at IF = 15 A, enabling bidirectional energy recovery in regenerative braking circuits without external freewheeling diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin |
| RDS(on) | 3.2 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 60 A, critical for thermal management in compact modules |
| ID (cont) | 60 A @ TC = 25 °C - Sustains peak motor startup currents without derating on standard 1"² FR4 PCB |
| TJ max | +175 °C - Supports operation in engine compartment environments per AEC-Q101 stress testing |
| Qg | 51 nC typical - Determines gate driver power requirement and switching transition time in 100–500 kHz converters |
| RthJC | 2.2 °C/W - Enables direct thermal coupling to heatsink or copper plane for >50 W power dissipation capability |
| EAS | 31.2 mJ - Withstands single-pulse inductive energy during fault events without avalanche failure |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed drain copper on bottom side for enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Drain (D) | Internally connected to bottom thermal pad - primary heat path and high-current output node |
| 4 | Gate (G) | Control terminal requiring ≤ ±20 V drive; 0.44 Ω typical gate resistance limits ringing |
| 5, 6 | Source (S) | Power return path and reference for gate drive; tied to PCB ground plane for low-inductance layout |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and UHAST - eliminates need for additional qualification effort |
| 100% Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field-reliability in motor drives |
| Low RDS(on) × Qg figure of merit | 0.163 Ω·nC - balances conduction and switching losses for high-efficiency 48 V mild-hybrid DC-DC stages |
| Enhanced body diode softness | 1.2 V VSD max at 15 A - reduces EMI during reverse recovery in bidirectional converters |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - supports global automotive supply chain requirements |
Applications
| Electric Power Steering (EPS) | 48 V Mild-Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-current H-bridge driving brushed or BLDC assist motors in steering column assemblies. IC Role / Device Role / Timing Role: High-side and low-side switching element in 12 V → 48 V bi-directional buck-boost stage. Use Value: 3.2 mΩ RDS(on) minimizes I²R heating during sustained 50 A assist torque, while 175 °C rating accommodates sealed housing thermal constraints. | Use Scenario: Primary switch in isolated dual-active-bridge (DAB) topology converting between 12 V starter battery and 48 V Li-ion storage. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge with 100–200 kHz PWM. Use Value: 51 nC Qg enables clean turn-on/turn-off edges with standard gate drivers, reducing cross-conduction losses and improving ZVS behavior. |
| On-Board Charger (OBC) Input Stage | Automotive Battery Disconnect Unit (BDU) |
Use Scenario: AC-DC PFC boost switch handling 3.3 kW input in Level 2 EV charging systems. IC Role / Device Role / Timing Role: Fast-switching, high-current switch in continuous conduction mode (CCM) boost converter. Use Value: 31.2 mJ EAS withstands line surge transients; 2.2 °C/W RthJC allows direct mounting to aluminum heatsink without thermal interface material. | Use Scenario: Solid-state replacement for mechanical contactors in high-voltage battery isolation during crash detection or service mode. IC Role / Device Role / Timing Role: Normally-open power switch controlling main traction battery feed to inverter and auxiliary systems. Use Value: AEC-Q101 qualification and 100% UIS testing ensure fail-safe open-circuit behavior under short-circuit or overcurrent faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZLPBF | Higher RDS(on) (4.7 mΩ), TO-220AB package, no AEC-Q101 qualification | Limited to non-automotive industrial motor drives due to lack of automotive qualification and thermal performance | Select only if board-level qualification is feasible and thermal budget permits higher conduction loss |
| STL220N4F7AG | Lower Qg (38 nC), same PowerFLAT 5x6 package, AEC-Q101 qualified but 4.7 mΩ RDS(on) | Better for ultra-high-frequency (>1 MHz) switching where gate drive loss dominates, but less optimal for high-current conduction | Prefer when optimizing for switching loss in resonant topologies; avoid where 60 A continuous ID is required |
Compared with IRF1404ZLPBF and STL220N4F7AG, SQJ444EP-T1_BE3 delivers the lowest RDS(on) × ID product among AEC-Q101-qualified 40 V MOSFETs in leadless packages, making it optimal for thermally constrained, high-current automotive power stages where conduction efficiency is prioritized.
Availability
SQJ444EP-T1_BE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild-hybrid DC-DC converters, and automotive battery disconnect units requiring stable component supply across extended production lifecycles.
Supply support for SQJ444EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with focus on high-reliability power and signal solutions.
The SQJ444EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature under-hood applications demanding AEC-Q101 compliance and robust avalanche performance.
FAQ
What is the maximum continuous drain current rating for SQJ444EP-T1_BE3 at 125 °C case temperature?
The SQJ444EP-T1_BE3 maintains a continuous drain current rating of 60 A even at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on), allowing full-rated current operation in high-ambient environments such as engine compartments without derating - a key advantage over many competing 40 V MOSFETs that drop to 40–45 A at 125 °C.
Does SQJ444EP-T1_BE3 require special rework considerations due to its PowerPAK® SO-8L package?
Yes, SQJ444EP-T1_BE3 uses a leadless PowerPAK® SO-8L package with exposed drain copper on the bottom side. Manual soldering with a soldering iron is not recommended per Vishay documentation. Rework must use controlled-profile hot-air or infrared reflow matching JEDEC J-STD-020, with peak temperature ≤ 260 °C. The absence of gull-wing leads means visual solder joint inspection is not possible - X-ray or electrical continuity verification is required post-rework for SQJ444EP-T1_BE3.
How does the body diode performance of SQJ444EP-T1_BE3 compare to standard silicon MOSFETs in regenerative braking applications?
The SQJ444EP-T1_BE3 features a body diode with 0.8–1.2 V forward voltage at 15 A and soft reverse recovery characteristics, verified by typical VSD vs. IS curves. Unlike standard MOSFETs with abrupt diode recovery, this design reduces voltage overshoot and EMI during flyback transitions in motor control - directly supporting reliable regenerative braking in EPS and BDU systems without external Schottky diodes.
Is SQJ444EP-T1_BE3 suitable for use in synchronous rectification topologies operating above 200 kHz?
Yes, SQJ444EP-T1_BE3 supports synchronous rectification up to 500 kHz, validated by its 51 nC total gate charge and 11 ns turn-on delay time. At 200–300 kHz, its 3.2 mΩ RDS(on) dominates conduction loss, while Qgd of 7 nC ensures minimal Miller-induced shoot-through risk. For optimal performance, pair with a gate driver capable of ≥2 A peak sink/source and ≤2 Ω series resistance to control dV/dt and minimize switching loss in SQJ444EP-T1_BE3-based SR stages.
What thermal interface strategy is recommended to achieve the 2.2 °C/W RthJC specification for SQJ444EP-T1_BE3?
To achieve the published 2.2 °C/W junction-to-case thermal resistance, SQJ444EP-T1_BE3 must be mounted with direct metal-to-metal contact between its exposed drain pad and a flat, nickel-plated copper heatsink or thick internal PCB copper layer (≥2 oz, 100% coverage). No thermal interface material is required or recommended - the bare copper pad is designed for solder reflow attachment. Thermal vias (≥8× 0.3 mm diameter, filled or capped) beneath the drain pad further reduce effective RthJA to ≤15 °C/W on 4-layer boards.
SQJ444EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ444EP-T1_BE3 FAQ
1.How can I place an order for SQJ444EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ444EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ444EP-T1_BE3 reliable?
The price and inventory of SQJ444EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ444EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ444EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ444EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ444EP-T1_BE3?
SQJ444EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ444EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ444EP-T1_BE3?
For technical support, including SQJ444EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ444EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ444EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ444EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ444EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ444EP-T1_BE3?
All SQJ444EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ444EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ444EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ444EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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