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Vishay Siliconix SQJ444EP-T1_GE3
- Part No.:
- SQJ444EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ444EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,878
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Product details
Overview
SQJ444EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 60 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It delivers RDS(on) of 3.2 mΩ at VGS = 10 V and 4.3 mΩ at VGS = 4.5 V in a PowerPAK® SO-8L package, enabling high-efficiency DC–DC conversion and motor control in engine management systems.
For engineers reviewing the SQJ444EP-T1_GE3 datasheet, SQJ444EP-T1_GE3 pinout, SQJ444EP-T1_GE3 application, or SQJ444EP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS testing, low thermal resistance (RthJC = 2.2 °C/W), and suitability for high-current 12 V/24 V automotive power stages requiring robust avalanche capability (EAS = 31.2 mJ).
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low on-resistance and fast switching in high-reliability automotive power rails. Its gate charge profile (Qg = 51 nC typ., Qgd = 7 nC) supports efficient PWM operation in synchronous buck converters and H-bridge drivers.
The device integrates a robust body diode with VSD = 0.8–1.2 V at IF = 15 A and ISM = 150 A pulsed rating, enabling freewheeling and regenerative braking functions without external diodes in compact motor drive designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage compatible with 24 V automotive battery systems including load dump transients. |
| RDS(on) | 3.2 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 60 A, critical for thermally constrained under-hood modules. |
| ID (cont.) | 60 A @ TC = 25 °C - Sustains high-current loads such as fuel pumps, radiator fans, and solenoid drivers without derating. |
| TJ max | +175 °C - Qualified for under-hood environments per AEC-Q101, supporting extended thermal margin in engine control units. |
| EAS | 31.2 mJ - Withstands repetitive inductive switching energy in motor drives and relay drivers without failure. |
| RthJC | 2.2 °C/W - Enables direct thermal coupling to heatsinks or PCB copper planes for high-power density layout. |
| Qg | 51 nC typ. - Low gate drive power requirement simplifies gate driver selection and reduces switching losses in 100–500 kHz applications. |
Pinout & Package
Package: PowerPAK® SO-8L - leadless, surface-mount, thermally enhanced 8-terminal package with exposed drain paddle on bottom side; dimensions 6.15 mm × 5.13 mm × 1.07 mm (L × W × H); RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; pins 1/2/3/4/7/8 are internally bonded to source metallization - used for low-inductance return path and thermal conduction. |
| 5 | Gate (G) | Control terminal; requires ≤ ±20 V gate drive; low Rg (0.44 Ω typ.) enables fast turn-on/turn-off with minimal ringing. |
| 6 | Drain (D) | Main power output terminal; connected to large exposed copper paddle on bottom - primary thermal and current path to PCB ground plane or heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests - required for engine bay and transmission control modules. |
| 100 % Rg and UIS tested | Each unit undergoes gate resistance screening and unclamped inductive switching validation - ensures robustness against real-world switching faults. |
| TrenchFET® architecture | Delivers lowest RDS(on) per die area among Vishay's 40 V automotive MOSFETs - maximizes power density in space-constrained ECUs. |
| Exposed drain paddle | Thermal path from junction to PCB via bottom-side copper - achieves RthJC = 2.2 °C/W, reducing thermal design complexity vs. SO-8. |
| Low Crss (220 pF max) | Minimizes Miller effect during high dv/dt switching - improves noise immunity and gate drive stability in noisy automotive environments. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Electric Power Steering (EPS) Motor Phase Switch |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 60 A and 10 kHz PWM frequency. IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization/de-energization; operates in hard-switched mode with precise timing control. Use Value: Low RDS(on) minimizes I²R heating during sustained injection pulses; 175 °C rating ensures reliability under hood ambient up to 125 °C. | Use Scenario: Bidirectional phase-leg switching in 3-phase EPS motor inverters, handling 40–50 A RMS with regenerative braking currents. IC Role / Device Role / Timing Role: Low-side and high-side switching element in H-bridge topology; conducts freewheeling current via integrated body diode during dead-time. Use Value: Low Qgd and Crss reduce cross-conduction risk; EAS rating absorbs inductive kickback during rapid direction reversal. |
| 12 V/24 V DC–DC Converter Primary Switch | Automotive HVAC Blower Motor Controller |
Use Scenario: Primary-side synchronous rectifier in isolated 12 V → 5 V/3.3 V buck-boost converters powering ADAS sensors and infotainment systems. IC Role / Device Role / Timing Role: High-frequency (300–500 kHz) main switch; duty cycle modulated to regulate output voltage under dynamic load. Use Value: Low Qg and RDS(on) jointly reduce total switching + conduction losses below 1.5 W, enabling >95 % efficiency at full load. | Use Scenario: PWM-controlled speed regulation of brushed DC blowers in climate control systems, operating continuously at 30–45 A. IC Role / Device Role / Timing Role: Single-ended high-side or low-side switch; driven by microcontroller GPIO with external gate driver. Use Value: AEC-Q101 qualification guarantees 15-year field life; RthJC = 2.2 °C/W allows direct mounting on aluminum chassis for passive cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PbF | Higher RDS(on) (20 mΩ @ 10 V), TO-220 package, lower ID (74 A), non-AEC-Q101 | Not qualified for automotive under-hood use; suited for industrial power supplies only | Select only for non-automotive, cost-sensitive, through-hole designs where thermal performance is less critical. |
| STL220N4F7AG | Same VDS (40 V), lower RDS(on) (1.8 mΩ @ 10 V), PowerFLAT 5x6 package, AEC-Q101 qualified | Smaller footprint but higher thermal resistance (RthJC = 3.5 °C/W); requires tighter layout control | Prefer when board space is constrained and peak power < 50 W; verify PCB copper area for thermal compliance. |
Compared with IRF4905PbF and STL220N4F7AG, the SQJ444EP-T1_GE3 offers optimal balance of ultra-low RDS(on), proven AEC-Q101 reliability, and thermal performance in the widely adopted PowerPAK SO-8L footprint - making it ideal for production automotive power stages where long-term supply continuity and qualification traceability are mandatory.
Availability
SQJ444EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC–DC converters requiring stable component supply, long-lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SQJ444EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and automotive qualification.
The SQJ444EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature engine compartment applications demanding AEC-Q101 compliance and robust avalanche performance.
FAQ
What is the maximum continuous drain current rating for SQJ444EP-T1_GE3 at 125 °C case temperature?
The SQJ444EP-T1_GE3 maintains a continuous drain current rating of 60 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and high-temperature silicon process, enabling sustained operation in hot under-hood locations without current derating - a key advantage over standard industrial MOSFETs that typically derate significantly above 100 °C.
Is SQJ444EP-T1_GE3 suitable for synchronous rectification in automotive DC–DC converters?
Yes, the SQJ444EP-T1_GE3 is well-suited for synchronous rectification due to its low RDS(on) of 3.2 mΩ at VGS = 10 V and fast switching parameters (Qg = 51 nC, Qgd = 7 nC). Its AEC-Q101 qualification, 175 °C junction rating, and low Crss ensure reliable high-frequency operation (up to 500 kHz) in isolated buck-boost converters powering ADAS and infotainment systems where efficiency and thermal headroom are critical.
Does SQJ444EP-T1_GE3 have an integrated Schottky diode or require an external freewheeling diode?
No, the SQJ444EP-T1_GE3 does not integrate a Schottky diode. It features a robust intrinsic body diode with VSD = 0.8–1.2 V at IF = 15 A and ISM = 150 A pulsed rating. This body diode is fully characterized and qualified for freewheeling in motor drives and inductive load switching - eliminating the need for an external diode in most automotive applications while maintaining AEC-Q101 compliance.
What is the gate threshold voltage range for SQJ444EP-T1_GE3, and how does it impact 3.3 V microcontroller compatibility?
The gate threshold voltage (VGS(th)) for SQJ444EP-T1_GE3 is specified from 1.5 V to 2.5 V (typ. 2.0 V). While this allows turn-on with 3.3 V logic, full enhancement requires VGS ≥ 4.5 V to achieve RDS(on) = 4.3 mΩ. For reliable 3.3 V MCU interface, a gate driver with level-shifting or bootstrap capability is recommended to ensure VGS = 10 V during conduction - preserving low-loss operation without compromising control signal integrity.
How is thermal performance validated for SQJ444EP-T1_GE3, and what PCB layout guidance applies?
Thermal performance of SQJ444EP-T1_GE3 is validated per JEDEC standards using a 1" × 1" FR-4 PCB with 2 oz. copper on both sides. Its RthJC = 2.2 °C/W is measured from junction to the exposed drain paddle, requiring direct soldering of the bottom-side paddle to a large copper pour or thermal pad. Vishay recommends the minimum pad pattern from Doc. #63818 - ensuring full solder coverage of all eight terminals and the central drain paddle to realize specified thermal resistance and mechanical reliability.
SQJ444EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ444EP-T1_GE3 FAQ
1.How can I place an order for SQJ444EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ444EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ444EP-T1_GE3 reliable?
The price and inventory of SQJ444EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ444EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ444EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ444EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ444EP-T1_GE3?
SQJ444EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ444EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ444EP-T1_GE3?
For technical support, including SQJ444EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ444EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ444EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ444EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ444EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ444EP-T1_GE3?
All SQJ444EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ444EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ444EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ444EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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