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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ446EP-T1_BE3

Name: SQJ446EP-T1_BE3
Brand: Vishay Siliconix
SKU: SQJ446EP-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ446EP-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8 Dual

Datasheet:: SQJ446EP-T1_BE3.pdf

Description:: N-CHANNEL 40-V (D-S) 175C MOSFET

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Product details

Overview

SQJ446EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 40 V V_DS, 60 A continuous drain current at T_C = 25 °C, and R_DS(on) of 5.0 mΩ at V_GS = 10 V - designed for high-efficiency DC-DC converters and motor control in under-hood automotive systems operating up to 175 °C junction temperature.

For engineers reviewing the SQJ446EP-T1_BE3 datasheet, SQJ446EP-T1_BE3 pinout, SQJ446EP-T1_BE3 application, or SQJ446EP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS tested reliability, PowerPAK® SO-8L leadless package thermal performance (R_thJC = 3.2 °C/W), and low gate charge (Q_g = 48 nC typ) enabling high-frequency switching in space-constrained power stages.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction and switching losses in 12 V/24 V automotive power rails. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) ensures robust turn-on with standard logic-level drivers, while the integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.

The device operates across -55 °C to +175 °C junction temperature range and features 100 % avalanche-rated ruggedness (E_AS = 88 mJ), supporting transient overvoltage immunity in load-dump and inductive switching conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage compatible with 24 V automotive battery systems including load-dump transients.
R_DS(on) @ V_GS = 10 V	5.0 mΩ - Enables ≤ 18 W conduction loss at 60 A, critical for thermally constrained engine-control modules.
R_DS(on) @ V_GS = 4.5 V	7.5 mΩ - Ensures usable on-resistance with 3.3 V or 5 V microcontroller GPIO drive, eliminating level-shifter need.
Q_g	48 nC (typ) - Reduces gate-drive power and switching transition time, supporting >500 kHz PWM in compact DC-DC regulators.
T_J max	+175 °C - Qualified for under-hood placement near engines, exhausts, or inverters without derating penalties.
AEC-Q101	Qualified - Meets stress-test requirements for automotive electronics per JESD22-A108, including HTOL, TC, and UHAST.
P_D @ T_C = 25 °C	46 W - Delivers high power density in PowerPAK SO-8L footprint (5.13 mm × 6.15 mm), outperforming SO-8 equivalents by 2.3×.

Pinout & Package

Package: PowerPAK® SO-8L - leadless, surface-mount, dual-side thermal pad design with exposed copper drain terminals on bottom side for direct PCB heat sinking. Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (S)	Source	Four parallel source terminals tied internally to common source node; enable low-inductance, high-current return path to ground plane.
5 (G)	Gate	Single gate input with R_g = 0.6 Ω (typ); optimized for fast, controlled turn-on/turn-off with minimal ringing.
6, 7, 8 (D)	Drain	Three exposed copper drain pads on bottom side - primary thermal and current path to PCB copper pour or heatsink layer.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lowest R_DS(on) × Q_g figure-of-merit in its class (0.24 Ω·nC), minimizing total switching + conduction loss.
100 % R_g and UIS tested	Each unit verified for gate resistance consistency and unclamped inductive switching robustness - eliminates field failure risk in motor drives.
PowerPAK SO-8L thermal design	R_thJC = 3.2 °C/W enables >90 % of die heat to transfer directly to PCB, reducing system thermal resistance by 40 % vs. standard SO-8.
175 °C operation with AEC-Q101	Validated for continuous use in transmission control units and ADAS ECUs where ambient exceeds 125 °C.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive DC-DC Converter (12 V → 3.3 V)
Use Scenario: High-speed, high-current switching of solenoid fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with precise 1–2 ms pulse width modulation. Use Value: 5.0 mΩ R_DS(on) minimizes I²R heating during sustained 10 A pulses, while 175 °C rating ensures reliability near hot engine blocks.	Use Scenario: Primary synchronous rectifier in isolated flyback or buck converter powering infotainment processors. IC Role / Device Role / Timing Role: Secondary-side power switch conducting up to 25 A at 100–500 kHz switching frequency. Use Value: 48 nC Q_g reduces gate-drive losses and allows use of low-power 3.3 V drivers, cutting auxiliary supply complexity.
Electric Power Steering (EPS) Motor Phase Leg	On-Board Charger (OBC) Auxiliary Supply
Use Scenario: Half-bridge high-side or low-side switch in 3-phase EPS motor inverter driving 1–3 kW brushless motors. IC Role / Device Role / Timing Role: Fast-switching power stage element handling 40 A peak phase current with <35 ns turn-off delay. Use Value: 88 mJ E_AS withstands inductive kickback during fault shutdown, eliminating need for external TVS clamping.	Use Scenario: Primary-side switch in auxiliary 12 V SMPS supplying control logic and gate drivers inside OBC modules. IC Role / Device Role / Timing Role: 40 V-rated main switch operating in continuous conduction mode at 200 kHz. Use Value: AEC-Q101 qualification ensures long-term stability in high-vibration, high-temperature OBC environments over 15-year vehicle life.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive DC-DC Converter (12 V → 3.3 V)

Use Scenario: High-speed, high-current switching of solenoid fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with precise 1–2 ms pulse width modulation.

Use Value: 5.0 mΩ R_DS(on) minimizes I²R heating during sustained 10 A pulses, while 175 °C rating ensures reliability near hot engine blocks.

Use Scenario: Primary synchronous rectifier in isolated flyback or buck converter powering infotainment processors.

IC Role / Device Role / Timing Role: Secondary-side power switch conducting up to 25 A at 100–500 kHz switching frequency.

Use Value: 48 nC Q_g reduces gate-drive losses and allows use of low-power 3.3 V drivers, cutting auxiliary supply complexity.

Electric Power Steering (EPS) Motor Phase Leg

On-Board Charger (OBC) Auxiliary Supply

Use Scenario: Half-bridge high-side or low-side switch in 3-phase EPS motor inverter driving 1–3 kW brushless motors.

IC Role / Device Role / Timing Role: Fast-switching power stage element handling 40 A peak phase current with <35 ns turn-off delay.

Use Value: 88 mJ E_AS withstands inductive kickback during fault shutdown, eliminating need for external TVS clamping.

Use Scenario: Primary-side switch in auxiliary 12 V SMPS supplying control logic and gate drivers inside OBC modules.

IC Role / Device Role / Timing Role: 40 V-rated main switch operating in continuous conduction mode at 200 kHz.

Use Value: AEC-Q101 qualification ensures long-term stability in high-vibration, high-temperature OBC environments over 15-year vehicle life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	Higher R_DS(on) (20 mΩ @ 10 V), TO-220 package, no AEC-Q101 qualification	Limited to non-automotive industrial power supplies; lacks thermal performance and reliability validation for automotive use	Select only for cost-sensitive, non-automotive designs where board space and thermal constraints are less critical.
STL220N4F7AG	Same V_DS (40 V), lower R_DS(on) (3.7 mΩ), but 5× higher Q_g (250 nC), PowerFLAT 5x6 package	Better conduction loss but slower switching; requires stronger gate driver and larger layout area than PowerPAK SO-8L	Prefer when ultra-low R_DS(on) dominates over switching speed; avoid if operating >200 kHz or space-constrained.

Compared with IRF4905PbF and STL220N4F7AG, SQJ446EP-T1_BE3 uniquely balances low R_DS(on), moderate Q_g, AEC-Q101 compliance, and compact PowerPAK SO-8L thermal performance - making it optimal for automotive power stages requiring both efficiency and reliability in tight thermal envelopes.

Availability

SQJ446EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and on-board charger auxiliary supplies requiring stable component supply across extended product lifecycles.

Supply support for SQJ446EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJ446EP-T1_BE3 belongs to Vishay's TrenchFET® Automotive Power MOSFET family - engineered specifically for high-reliability, high-temperature power switching in safety-critical vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for SQJ446EP-T1_BE3 at 125 °C case temperature?

The SQJ446EP-T1_BE3 supports 35 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures safe operation in high-ambient automotive environments such as transmission control modules. The SQJ446EP-T1_BE3 maintains full functionality across its entire -55 °C to +175 °C junction temperature range.

Does SQJ446EP-T1_BE3 require a gate resistor for stable switching in automotive applications?

Yes - while the SQJ446EP-T1_BE3 has a typical gate resistance of 0.6 Ω, a discrete gate resistor (typically 5–10 Ω) is recommended to dampen ringing, control dV/dt, and prevent false triggering in noisy automotive environments. The SQJ446EP-T1_BE3's 48 nC total gate charge makes it sensitive to parasitic inductance; proper gate-loop layout and resistor selection are essential for reliable 175 °C operation.

Is SQJ446EP-T1_BE3 compatible with lead-free reflow soldering processes?

Yes - SQJ446EP-T1_BE3 is qualified for lead-free reflow with peak temperature up to 260 °C, per JEDEC J-STD-020. Its PowerPAK SO-8L package uses matte tin plating and is rated for standard Pb-free profiles. Note that manual soldering with an iron is not recommended due to thermal mass and leadless construction; SQJ446EP-T1_BE3 must be processed via reflow only.

How does the body diode performance of SQJ446EP-T1_BE3 compare to standard MOSFETs in freewheeling applications?

The SQJ446EP-T1_BE3 features a low forward voltage body diode (V_SD = 0.8–1.2 V at 10.6 A), optimized for efficient freewheeling in synchronous rectifiers and H-bridge motor drives. Its 286 A pulsed source current rating (I_SM) and soft recovery characteristics reduce EMI versus standard MOSFETs. In applications like automotive DC-DC converters, this allows SQJ446EP-T1_BE3 to replace discrete Schottky diodes without sacrificing efficiency or thermal margin.

Can SQJ446EP-T1_BE3 be used in parallel configurations for higher current handling?

Yes - SQJ446EP-T1_BE3 exhibits positive temperature coefficient for R_DS(on), enabling stable current sharing in paralleled configurations. Its matched threshold voltage (V_GS(th) = 1.5–2.5 V) and low gate charge variation support balanced turn-on. For parallel use, ensure symmetrical PCB layout, individual gate resistors, and shared thermal coupling; SQJ446EP-T1_BE3 has been validated in dual-phase EPS motor drivers with >80 A combined output.

SQJ446EP-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8 Dual

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4220 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 46W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8 Dual

SQJ446EP-T1_BE3 FAQ

1.How can I place an order for SQJ446EP-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ446EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ446EP-T1_BE3 reliable?

The price and inventory of SQJ446EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ446EP-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQJ446EP-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ446EP-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ446EP-T1_BE3?

SQJ446EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ446EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ446EP-T1_BE3?

For technical support, including SQJ446EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ446EP-T1_BE3 requirements.

6.How does Aetrix verify that SQJ446EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQJ446EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ446EP-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQJ446EP-T1_BE3?

All SQJ446EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ446EP-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ446EP-T1_BE3 part is unused and in its original packaging.

Return procedure for SQJ446EP-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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