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Vishay Siliconix SQJ446EP-T1_GE3
- Part No.:
- SQJ446EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ446EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,888
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Product details
Overview
SQJ446EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 60 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature, with RDS(on) of 5.0 mΩ at VGS = 10 V and 7.5 mΩ at VGS = 4.5 V - deployed in high-efficiency DC–DC converters and motor control stages in engine management and ADAS power systems.
For engineers reviewing the SQJ446EP-T1_GE3 datasheet, SQJ446EP-T1_GE3 pinout, SQJ446EP-T1_GE3 application, or SQJ446EP-T1_GE3 equivalent, key selection criteria include AEC-Q101 qualification, 100 % Rg and UIS testing, PowerPAK® SO-8L leadless package thermal performance (RthJC = 3.2 °C/W), and gate charge (Qg = 48–65 nC) for fast-switching 12 V/24 V automotive subsystems.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and high current density in a compact surface-mount package. Its gate threshold voltage (VGS(th) = 1.5–2.5 V) enables robust 3.3 V and 5 V logic-level drive compatibility, while its 100 % UIS-tested ruggedness supports inductive load switching without external snubbers.
The device integrates a body diode with VF = 0.8–1.2 V at IF = 10.6 A and ISM = 286 A pulsed rating, supporting synchronous rectification and freewheeling in bidirectional power stages. Thermal design leverages the exposed-drain PowerPAK® SO-8L footprint for low junction-to-case resistance (3.2 °C/W) and high-power dissipation (PD = 46 W at TC = 25 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 40 V - supports 12 V and 24 V automotive battery rails with margin for load dump transients. |
| RDS(on) @ 10 V | 5.0 mΩ - enables <1.5 W conduction loss at 60 A, critical for high-current power distribution modules. |
| RDS(on) @ 4.5 V | 7.5 mΩ - ensures full enhancement with standard microcontroller GPIO outputs without level-shifting. |
| ID (Cont.) @ TC=25°C | 60 A - delivers high peak power in short-duration engine cranking or ADAS actuator pulses. |
| Qg (Total) | 48–65 nC - balances switching speed and gate driver power requirements in 100–500 kHz SMPS designs. |
| TJ Max | +175 °C - qualified for under-hood environments including transmission control units and EPS ECUs. |
| AEC-Q101 | Qualified - meets stress test requirements for automotive electronics per JESD22-A108, enabling use in safety-critical systems. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, exposed-drain thermal pad), dimensions 6.15 mm × 5.13 mm × 1.07 mm (L × W × H), JEDEC-compliant footprint with dual-side copper thermal land.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Source) | Source terminal (common) | Four parallel source pads reduce parasitic inductance and improve current sharing in high-di/dt switching. |
| 5 (Gate) | Control input | Single gate pad optimized for low-inductance gate loop; Rg = 0.3–1.2 Ω supports stable 10 ns-scale switching. |
| 6, 7, 8 (Drain) | Power output / heat sink | Exposed copper drain pad provides primary thermal path to PCB; requires solder mask defined thermal land per Doc. 63818. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 5.0 mΩ RDS(on) in SO-8L footprint - 30 % lower on-resistance than planar equivalents at same die size. |
| AEC-Q101 qualification | Validated for automotive temperature cycling, humidity bias, and mechanical shock - required for ASIL-B power stages. |
| 100 % UIS tested | Guarantees avalanche energy handling (EAS = 88 mJ) without derating - eliminates need for external clamping in solenoid drivers. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and ELV 2000/53/EC - suitable for global OEM production programs. |
| Low Qgd / Qgs ratio | Qgd = 11 nC, Qgs = 7.4 nC - reduces Miller effect and improves hard-switching stability in half-bridge configurations. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Electric Power Steering (EPS) Motor Phase Switch |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with 1–5 ms pulse widths and 100+ Hz repetition rates. IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current; operates in linear and saturated modes during PWM commutation. Use Value: 7.5 mΩ RDS(on) at 4.5 V gate drive minimizes voltage drop across switch during cold-cranking (6.5 V battery), ensuring consistent injection timing. | Use Scenario: Three-phase inverter leg switching for 24 V brushless DC motor in column-assist EPS systems. IC Role / Device Role / Timing Role: High-current, high-reliability N-channel MOSFET in half-bridge topology; handles 40–60 A peak phase current with <100 ns dead-time tolerance. Use Value: 175 °C TJ max and AEC-Q101 qualification ensure uninterrupted operation during sustained steering assist at elevated ambient temperatures (>125 °C under hood). |
| ADAS Radar Module DC–DC Converter | 12 V Battery Disconnect Switch |
Use Scenario: Synchronous rectifier in 300 kHz buck converter supplying 1.2 V/20 A to MMIC radar transceivers. IC Role / Device Role / Timing Role: Secondary-side power switch; conducts high-frequency, high-ripple current with minimal conduction + switching loss trade-off. Use Value: Low Qg (48–65 nC) and Ciss = 3170–4220 pF enable efficient zero-voltage switching (ZVS) soft-start and reduced EMI in compact radar PCB layouts. | Use Scenario: Solid-state replacement for electromechanical relay in 12 V battery main disconnect for start-stop and energy recovery systems. IC Role / Device Role / Timing Role: Single-pole, high-current isolation switch; must withstand 200 A pulsed fault current and sustain 60 A continuous load. Use Value: 200 A IDM rating and 88 mJ EAS support safe interruption of short-circuit faults without catastrophic failure - critical for ISO 16750-2 compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V but TO-220 package; no AEC-Q101 qualification; higher RthJA (62 °C/W vs. 65 °C/W PCB mount). | Non-automotive industrial motor drives only; unsuitable for under-hood deployment due to temperature and qualification gaps. | Select only for cost-sensitive non-automotive 40 V systems where qualification and thermal performance are secondary. |
| STL220N4F7AG | 40 V, 220 A, PowerFLAT 5x6 package; AEC-Q101 qualified; RDS(on) = 1.6 mΩ @ 10 V but Qg = 105 nC - higher drive loss. | Better for ultra-high-current EPS inverters; overqualified for injector drivers where gate drive simplicity matters more than lowest RDS(on). | Prefer when >100 A peak current or space-constrained 5x6 mm layout is mandatory; avoid if gate driver capability is limited. |
Compared with IRF1404ZPBF and STL220N4F7AG, the SQJ446EP-T1_GE3 uniquely balances AEC-Q101 compliance, SO-8L manufacturability, 7.5 mΩ 4.5 V drive, and 48–65 nC Qg - making it optimal for mid-power automotive switches where qualification, thermal reliability, and logic-level compatibility converge.
Availability
SQJ446EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, ADAS radar supplies, and 12 V battery management requiring stable component supply across automotive production lifecycles.
Supply support for SQJ446EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ446EP-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® SO-8L family, engineered specifically for high-current, high-temperature switching in engine bay and chassis-mounted electronic control modules.
FAQ
What is the maximum continuous drain current rating for SQJ446EP-T1_GE3 at 125 °C case temperature?
The SQJ446EP-T1_GE3 supports 35 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8L package and ensures reliable operation in high-ambient under-hood environments. The SQJ446EP-T1_GE3 maintains RDS(on) = 5.9 mΩ at this condition when VGS = 10 V and ID = 14 A, preserving efficiency in thermally constrained designs.
Does SQJ446EP-T1_GE3 require a gate resistor for stable switching in automotive applications?
Yes - the SQJ446EP-T1_GE3 benefits from an external gate resistor (typically 5–22 Ω) to dampen ringing and control dV/dt during turn-on/turn-off, especially in high-di/dt motor drive or solenoid circuits. Its measured gate resistance Rg = 0.3–1.2 Ω is internal; adding series resistance prevents overshoot and EMI. The SQJ446EP-T1_GE3 datasheet recommends Rg = 1 Ω for characterization, confirming that external tuning is expected for system-level optimization.
Is SQJ446EP-T1_GE3 compatible with lead-free reflow soldering profiles?
Yes - SQJ446EP-T1_GE3 is qualified for lead-free reflow with peak temperature up to 260 °C, per Vishay document 73257. Its PowerPAK® SO-8L package uses matte tin terminations and is halogen-free. Note that manual soldering with an iron is not recommended due to the leadless construction and exposed copper drain pad; SQJ446EP-T1_GE3 must be processed using controlled-profile reflow to ensure void-free solder joints and thermal pad wetting.
How does the body diode performance of SQJ446EP-T1_GE3 compare to discrete Schottky alternatives in synchronous rectification?
The SQJ446EP-T1_GE3 body diode has VF = 0.8–1.2 V at IF = 10.6 A and reverse recovery time trr < 50 ns, making it suitable for freewheeling and synchronous rectification in medium-frequency (<500 kHz) converters. While discrete Schottkys offer lower VF, the integrated body diode eliminates component count and layout complexity. For designs where reverse recovery loss dominates, the SQJ446EP-T1_GE3's 100 % UIS-tested ruggedness ensures reliability even under hard-commutation stress - a key advantage over many Schottky diodes.
Can SQJ446EP-T1_GE3 be used in parallel configurations for higher current handling?
Yes - SQJ446EP-T1_GE3 supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across devices. Layout symmetry, matched gate drive paths, and individual gate resistors are essential. Derating by 15–20 % per device is recommended to account for thermal coupling; two SQJ446EP-T1_GE3 devices can reliably deliver ~100 A continuous in well-designed PCBs with 2 oz. copper and thermal vias. The SQJ446EP-T1_GE3's 175 °C TJ rating further enables such configurations in demanding automotive power stages.
SQJ446EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4220 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 46W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ446EP-T1_GE3 FAQ
1.How can I place an order for SQJ446EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ446EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ446EP-T1_GE3 reliable?
The price and inventory of SQJ446EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ446EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ446EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ446EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ446EP-T1_GE3?
SQJ446EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ446EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ446EP-T1_GE3?
For technical support, including SQJ446EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ446EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ446EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ446EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ446EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ446EP-T1_GE3?
All SQJ446EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ446EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ446EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ446EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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