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Vishay Siliconix SQJ454EP-T1_BE3
- Part No.:
- SQJ454EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ454EP-T1_BE3.pdf
- Description:
- N-CHANNEL 200-V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:5,380
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Product details
Overview
SQJ454EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 200 V drain-source voltage, 13 A continuous drain current at 25 °C, and 0.145 Ω RDS(on) at VGS = 10 V. It serves as a high-reliability switching element in DC-DC converters and motor control circuits operating up to 175 °C junction temperature.
For engineers reviewing the SQJ454EP-T1_BE3 datasheet, SQJ454EP-T1_BE3 pinout, SQJ454EP-T1_BE3 application, or SQJ454EP-T1_BE3 equivalent, key selection criteria include AEC-Q101 qualification, 100 % Rg and UIS testing, thermal resistance of 2.2 °C/W (junction-to-case), and PowerPAK® SO-8L package compatibility with high-power-density automotive PCB layouts.
Technical Context
This MOSFET employs trench gate technology to achieve low on-resistance and fast switching performance. Its 200 V VDS rating supports 48 V and 60 V nominal bus systems, while the 175 °C maximum junction temperature enables operation in under-hood environments without derating.
The device features integrated body diode with 86–175 ns reverse recovery time and 335–700 nC Qrr, supporting synchronous rectification and freewheeling in hard-switched topologies. Gate charge parameters (Qg = 56–85 nC, Qgd = 15 nC) indicate moderate drive strength requirements suitable for standard gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Supports 48 V/60 V automotive bus systems with ≥2× voltage margin for transients. |
| RDS(on) @ VGS = 10 V | 0.145 Ω - Enables ≤10 W conduction loss at 7.5 A, critical for thermally constrained modules. |
| ID (continuous, TC = 25 °C) | 13 A - Sustains peak load currents in 12 V/24 V starter-generator and EPS control stages. |
| RthJC | 2.2 °C/W - Allows direct heatsinking via exposed drain pad; enables >50 W power dissipation with modest case cooling. |
| AEC-Q101 qualified | Qualified for automotive applications per stress test requirements - mandatory for engine bay and transmission control units. |
| Qg (total gate charge) | 56–85 nC - Determines gate driver current demand; compatible with common 1–2 A peak-output drivers. |
| Body diode VSD | 0.83–1.2 V @ IF = 7.5 A - Low forward drop reduces freewheeling losses in H-bridge motor drives. |
Pinout & Package
Package: PowerPAK® SO-8L (single configuration), 5.13 mm × 6.15 mm footprint, 1.07 mm height, exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt switching. |
| 5 (G) | Gate | Single gate input with 0.20–0.80 Ω gate resistance - defines Miller plateau duration and switching speed control. |
| 6, 7, 8 (D) | Drain | Three drain terminals connected to large exposed copper pad - primary thermal path and high-current return path. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables lower RDS(on) per die area vs. planar MOSFETs - improves power density in space-constrained modules. |
| 100 % Rg and UIS tested | Guarantees gate robustness against overvoltage and avalanche energy handling (EAS = 11.2 mJ) - eliminates field failures in inductive load switching. |
| Exposed drain pad | Provides low-inductance, low-thermal-resistance path to PCB ground plane - essential for EMI control and thermal management. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and ELV requirements - meets global automotive environmental mandates. |
| 175 °C maximum junction temperature | Supports operation in engine compartment locations without forced air cooling - extends system lifetime under thermal stress. |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-efficiency bidirectional buck-boost conversion between 48 V and 12 V battery domains. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous rectified topology, switching at 100–300 kHz. Use Value: 0.145 Ω RDS(on) minimizes conduction loss at 20–30 A output; 200 V rating accommodates 48 V bus transients up to 80 V. |
Use Scenario: Motor phase switching in column-assist EPS systems with compact ECU housing. IC Role / Device Role / Timing Role: Low-side N-channel switch in three-phase inverter driving brushless DC assist motor. Use Value: Four-source-pin layout reduces source inductance, improving dv/dt immunity and reducing shoot-through risk during PWM commutation. |
| On-Board Charger (OBC) Auxiliary Supply | Transmission Control Module (TCM) Solenoid Driver |
Use Scenario: Isolated auxiliary power supply for OBC control logic, requiring high reliability across vehicle lifetime. IC Role / Device Role / Timing Role: Primary switch in flyback or forward converter delivering 15 W at 5 V/3 A. Use Value: AEC-Q101 qualification ensures zero-defect operation over 15-year service life; 175 °C rating allows placement near main power stage. |
Use Scenario: High-current solenoid actuation in 8-speed automatic transmission valve bodies. IC Role / Device Role / Timing Role: Low-side driver for 12 V solenoids drawing up to 10 A peak current. Use Value: 30 A pulsed drain current (IDM) handles solenoid inrush; body diode VSD < 1.2 V limits flyback energy dissipation during turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 200 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N5LF8AG | 220 V VDS, 0.135 Ω RDS(on) @ 10 V, PowerFLAT™ 5x6 package, no AEC-Q101 documentation publicly available. | Lacks documented AEC-Q101 qualification - requires internal validation for automotive use. | Consider only if AEC-Q101 compliance is not required and board layout accommodates different footprint. |
| IRF4905SPBF | 200 V VDS, 0.150 Ω RDS(on) @ 10 V, TO-220AB package, non-automotive grade, RthJC = 2.5 °C/W. | Through-hole package increases assembly cost and limits power density; no automotive qualification or UIS testing. | Use only in non-automotive industrial designs where thermal margin exceeds 5 °C/W and lead time permits through-hole procurement. |
Compared with STL220N5LF8AG and IRF4905SPBF, SQJ454EP-T1_BE3 delivers verified AEC-Q101 compliance, superior thermal performance (RthJC = 2.2 °C/W), and production-tested UIS robustness - making it the only drop-in solution for safety-critical automotive power stages without requalification.
Availability
SQJ454EP-T1_BE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid DC-DC converters, and transmission control modules requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.
Supply support for SQJ454EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ454EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET product line, engineered specifically for high-temperature, high-reliability switching in engine control, chassis, and electrification systems.
FAQ
What is the maximum junction temperature rating for SQJ454EP-T1_BE3?
The SQJ454EP-T1_BE3 has a maximum junction temperature (TJ) of +175 °C, validated per AEC-Q101 stress testing. This rating allows uninterrupted operation in under-hood environments such as engine control units and transmission modules without thermal derating, provided the PCB thermal design maintains RthJA ≤ 68 °C/W and case temperature remains below 125 °C.
Is SQJ454EP-T1_BE3 qualified to AEC-Q101 standards?
Yes, SQJ454EP-T1_BE3 is fully AEC-Q101 qualified, with test reports covering HTOL, UHAST, TC, AC, and mechanical stress categories. The qualification applies to the exact PowerPAK® SO-8L package and lot-controlled manufacturing process used for SQJ454EP-T1_BE3 - no additional customer-level requalification is needed for automotive deployment.
What is the gate threshold voltage range for SQJ454EP-T1_BE3?
The gate threshold voltage (VGS(th)) for SQJ454EP-T1_BE3 is specified as 1.5 V (min), 2.0 V (typ), and 2.5 V (max) at VDS = VGS and ID = 250 μA. This tight distribution ensures consistent turn-on behavior across temperature and production lots, supporting reliable 3.3 V and 5 V gate drive in automotive microcontroller interfaces.
Does SQJ454EP-T1_BE3 include an integrated body diode?
Yes, SQJ454EP-T1_BE3 incorporates a monolithic body diode with forward voltage (VSD) of 0.83–1.2 V at IF = 7.5 A and reverse recovery time (trr) of 86–175 ns. This diode is fully characterized and tested, enabling its use in freewheeling, synchronous rectification, and regenerative braking paths without external diode addition.
What is the thermal resistance from junction to case (RthJC) for SQJ454EP-T1_BE3?
The junction-to-case thermal resistance (RthJC) for SQJ454EP-T1_BE3 is 2.2 °C/W, measured from junction to the exposed drain pad. This value is critical for heatsink design: with a 20 W power dissipation and 10 °C/W heatsink, total junction-to-ambient rise is ~42 °C - well within the 175 °C limit when ambient is 105 °C.
SQJ454EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 145mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 85 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ454EP-T1_BE3 FAQ
1.How can I place an order for SQJ454EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ454EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ454EP-T1_BE3 reliable?
The price and inventory of SQJ454EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ454EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ454EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ454EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ454EP-T1_BE3?
SQJ454EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ454EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ454EP-T1_BE3?
For technical support, including SQJ454EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ454EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ454EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ454EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ454EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ454EP-T1_BE3?
All SQJ454EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ454EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ454EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ454EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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