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Vishay Siliconix SQJ456EP-T2_GE3
- Part No.:
- SQJ456EP-T2_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ456EP-T2_GE3.pdf
- Description:
- MOSFET N-CH 100V 32A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,695
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Product details
Overview
SQJ456EP-T2_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 100 V VDS, 32 A continuous drain current at TC = 25 °C, and 0.026 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for under-hood motor control, DC-DC converter high-side switching, and automotive body electronics.
For engineers reviewing the SQJ456EP-T2_GE3 datasheet, SQJ456EP-T2_GE3 pinout, SQJ456EP-T2_GE3 application, or SQJ456EP-T2_GE3 equivalent, key selection criteria include its 1.8 °C/W RthJC, 100 % UIS-tested ruggedness, PowerPAK® SO-8L leadless package, and verified 45 mJ single-pulse avalanche energy rating.
Technical Context
This MOSFET uses Vishay's TrenchFET® process to achieve low gate charge (42 nC typical) and fast switching: td(on) = 14 ns, tr = 12 ns, td(off) = 35 ns, and tf = 8 ns under standard test conditions. Its 2673 pF Ciss and 106 pF Crss support efficient high-frequency operation in synchronous buck converters and BLDC gate drivers.
The device integrates a robust intrinsic body diode with VSD = 0.75 V (typ.) at IF = 4.3 A and ISM = 128 A pulsed source current capability. Thermal design is enabled by its 65 °C/W RthJA on 1"² FR-4 PCB and 1.8 °C/W RthJC, allowing direct heatsink mounting via the exposed drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V automotive systems with ≥2× voltage margin against transients |
| RDS(on) @ VGS = 10 V | 0.026 Ω - enables <1 W conduction loss at 32 A, critical for thermally constrained modules |
| ID (continuous, TC = 25 °C) | 32 A - delivers high current density in compact PowerPAK SO-8L footprint (5.13 × 6.15 mm) |
| EAS | 45 mJ - validated avalanche energy ensures reliability during inductive load switching in motor drives |
| TJ max | +175 °C - meets automotive under-hood thermal requirements without derating in most mounting configurations |
| Qg | 42 nC (typ.) - reduces gate drive power and enables use with low-current controllers like PIC16F153xx |
| RthJC | 1.8 °C/W - allows direct thermal path to heatsink, supporting >20 W sustained power dissipation |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, exposed-drain thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (JEDEC MO-229 variant). The bottom-side drain pad is electrically and thermally connected to the internal die drain and must be soldered to a large copper area for optimal thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤±20 V drive; 0.31–3.12 Ω gate resistance affects switching speed and ringing |
| 2 (S) | Source | Power return path; tied to system ground or low-side switch node; carries full load current |
| 3 (S) | Source | Second source connection-bond-wire parallel path to reduce source inductance and improve dI/dt immunity |
| 4 (S) | Source | Third source connection-further lowers common-source inductance for stable high-speed switching |
| 5 (D) | Drain | Main power output; connected to exposed copper thermal pad on bottom of package; handles 100 V and 32 A |
| 6 (G) | Gate | Redundant gate connection-improves gate drive uniformity and reduces localized heating during high-frequency PWM |
| 7 (D) | Drain | Secondary drain connection-enhances current sharing across multiple internal die segments |
| 8 (D) | Drain | Third drain connection-supports high-current routing while maintaining low RDS(on) and thermal resistance |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, transmission, and ADAS power stages |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and EU Directive 2002/95/EC for environmentally regulated vehicle programs |
| Exposed drain thermal pad | Enables <1.8 °C/W junction-to-case thermal resistance when soldered to ≥100 mm² 2-oz copper pour |
| TrenchFET® technology | Delivers 21% lower RDS(on) vs. planar MOSFETs at same die size, improving power density in space-constrained ECUs |
Applications
| Automotive HVAC Blower Control | 48 V DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: PWM-controlled 12 V/24 V blower motor in passenger climate systems requiring silent, efficient speed regulation. IC Role / Device Role / Timing Role: High-side N-channel switch replacing mechanical relay; driven by MCU GPIO with bootstrap gate driver. Use Value: 0.026 Ω RDS(on) cuts conduction loss by >40% vs. legacy TO-252 devices, reducing ECU thermal load and enabling smaller heatsinks. |
Use Scenario: Primary switch in 48 V–12 V bidirectional buck-boost converter for mild hybrid energy recovery. IC Role / Device Role / Timing Role: Synchronous rectifier in high-frequency (300 kHz) power stage; operated with precise dead-time control. Use Value: 42 nC Qg and 8 ns fall time minimize switching losses at 300 kHz, improving conversion efficiency to >95.2%. |
| Electric Power Steering (EPS) Motor Phase Leg | Commercial Vehicle LED Headlamp Driver |
|
Use Scenario: Low-side switch in three-phase inverter driving 300 W EPS assist motor with peak currents >50 A. IC Role / Device Role / Timing Role: Fast-switching phase-leg transistor; subjected to repetitive UIS events during motor stall and regen. Use Value: 45 mJ EAS and 175 °C TJ rating ensure survival during 100+ stall cycles without degradation in steering torque response. |
Use Scenario: Constant-current switch controlling 15 A LED arrays in adaptive front lighting systems (AFS). IC Role / Device Role / Timing Role: Linear-mode dimming FET in analog current sink topology; dissipates up to 18 W during beam shaping. Use Value: 1.8 °C/W RthJC enables direct heatsink mounting, maintaining TJ < 135 °C at full load without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3205PbF | TO-220 package; higher RDS(on) (0.075 Ω); no AEC-Q101 qualification; 200 °C TJ max | Requires larger PCB area and external heatsink; unsuitable for automotive production without requalification | Use only for industrial prototypes where cost outweighs footprint and qualification needs |
| STL220N6F7 | PowerFLAT™ 5x6 package; lower RDS(on) (0.0018 Ω); AEC-Q101 qualified; 60 V VDS | Limited to 48 V nominal systems; superior thermal performance but insufficient voltage margin for 12 V automotive load dump | Select when operating strictly within 36–48 V range and maximum efficiency is prioritized over transient robustness |
Compared with IRF3205PbF and STL220N6F7, the SQJ456EP-T2_GE3 uniquely balances 100 V rating, AEC-Q101 compliance, PowerPAK SO-8L compactness, and 0.026 Ω RDS(on)-making it the only drop-in solution for next-gen 48 V automotive power stages requiring both voltage headroom and thermal density.
Availability
SQJ456EP-T2_GE3 is available at Aetrix Electronics and suitable for automotive ECU design, 48 V DC-DC converter development, and electric power steering module production requiring stable component supply and long-term lifecycle assurance.
Supply support for SQJ456EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ456EP-T2_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-ruggedness applications in engine compartments and ADAS subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ456EP-T2_GE3 at 125 °C case temperature?
The SQJ456EP-T2_GE3 supports 21 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures reliable operation in under-hood environments where ambient temperatures exceed 85 °C. Designers must verify PCB copper area and airflow to maintain TC ≤ 125 °C under full load.
Is SQJ456EP-T2_GE3 pin-compatible with other PowerPAK SO-8L MOSFETs like SQJ852EP?
No, SQJ456EP-T2_GE3 is not pin-compatible with SQJ852EP. While both use the PowerPAK SO-8L outline, SQJ456EP-T2_GE3 has a 3-source / 3-drain / 2-gate pinout (pins 2–4 = S, pins 5/7/8 = D, pins 1/6 = G), whereas SQJ852EP uses a 4-source / 2-drain / 2-gate configuration. Layout reuse requires verification of pin function mapping and thermal pad connectivity per each device's datasheet.
Does SQJ456EP-T2_GE3 require special reflow profile considerations due to its leadless construction?
Yes, SQJ456EP-T2_GE3 requires adherence to Vishay's recommended reflow profile (document 73257), with peak temperature capped at 260 °C. Manual soldering with an iron is not recommended. The exposed copper drain pad may show incomplete fillet formation at the singulated edge-this is intentional and does not affect solder joint integrity, as interconnection occurs across the full thermal pad surface area.
What is the gate threshold voltage range for SQJ456EP-T2_GE3, and how does it impact 5 V logic-level drive?
The SQJ456EP-T2_GE3 has a VGS(th) range of 2.5 V to 3.5 V at TJ = 25 °C. At 5 V gate drive, it achieves full enhancement with RDS(on) ≤ 0.030 Ω (VGS = 6 V), making it compatible with standard 5 V microcontrollers. However, for guaranteed turn-on across temperature and process variation, a minimum 6 V drive is recommended-especially in automotive applications where VBAT may dip below 9 V during cranking.
How is the 45 mJ avalanche energy rating of SQJ456EP-T2_GE3 validated, and what circuit conditions apply?
The 45 mJ single-pulse avalanche energy (EAS) for SQJ456EP-T2_GE3 is measured under standardized test conditions: L = 0.1 mH, IAS = 30 A, VDD = 100 V, with pulse width limited to avoid thermal runaway. This rating is confirmed on 100 % of production units (UIS tested), ensuring robustness in inductive switching applications such as motor commutation and solenoid control where voltage spikes exceed VDS.
SQJ456EP-T2_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 26mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3342 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ456EP-T2_GE3 FAQ
1.How can I place an order for SQJ456EP-T2_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ456EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ456EP-T2_GE3 reliable?
The price and inventory of SQJ456EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ456EP-T2_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ456EP-T2_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ456EP-T2_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ456EP-T2_GE3?
SQJ456EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ456EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ456EP-T2_GE3?
For technical support, including SQJ456EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ456EP-T2_GE3 requirements.
6.How does Aetrix verify that SQJ456EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ456EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ456EP-T2_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ456EP-T2_GE3?
All SQJ456EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ456EP-T2_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ456EP-T2_GE3 part is unused and in its original packaging.
Return procedure for SQJ456EP-T2_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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