My Inquiry
My Account
Vishay Siliconix SQJ457EP-T2_GE3
- Part No.:
- SQJ457EP-T2_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ457EP-T2_GE3.pdf
- Description:
- P-CHANNEL 60-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:12,701
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQJ457EP-T2_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK® SO-8L package, rated for -60 V drain-source voltage, 0.025 Ω RDS(on) at VGS = -10 V, and -36 A continuous drain current at TC = 25 °C. It serves as a high-reliability high-side switch in 12 V/24 V automotive power distribution systems including body control modules and seat/mirror actuators.
For engineers reviewing the SQJ457EP-T2_GE3 datasheet, SQJ457EP-T2_GE3 pinout, SQJ457EP-T2_GE3 application, or SQJ457EP-T2_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, 100 % Rg and UIS tested reliability, and low gate charge (65 nC typical) enabling efficient PWM-controlled load switching in space-constrained ECUs.
Technical Context
This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with controlled dV/dt. Its gate threshold voltage of -2.0 V (typical) ensures robust turn-on with standard automotive logic-level drivers while maintaining noise immunity.
The device features integrated source-drain diode with -0.80 V forward voltage at -10 A, enabling bidirectional current handling in H-bridge motor control. Thermal design is supported by RthJC = 2.2 °C/W and RthJA = 68 °C/W (PCB mount), validated under AEC-Q101 stress conditions up to 175 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Supports full reverse-battery protection and load dump transients in 24 V commercial vehicle systems. |
| RDS(on) @ VGS = -10 V | 0.025 Ω - Enables <1 W conduction loss at -20 A, critical for thermally constrained under-hood modules. |
| ID (continuous) | -36 A @ TC = 25 °C - Sustains high-current loads such as HVAC blowers or fuel pumps without external heatsinking. |
| Qg (total gate charge) | 65 nC typical - Reduces driver power loss and enables >100 kHz PWM operation in active load management. |
| TJ max | +175 °C - Certified for under-hood placement per AEC-Q101, eliminating need for derating in hot ambient environments. |
| EAS | 64.8 mJ - Withstands inductive kickback from solenoids and motors without external snubbers in automotive actuators. |
| VGS(th) | -2.0 V typical - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs, even after aging or temperature drift. |
Pinout & Package
Package: PowerPAK® SO-8L (single configuration), surface-mount, lead (Pb)-free and halogen-free, dimensions 6.15 mm × 5.13 mm × 1.07 mm (L × W × H). Exposed drain pad on bottom for thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; pins 1–4 and 7–8 are internally bonded to reduce source inductance and improve switching stability. |
| 5 | Gate (G) | Control input; low 1.19 Ω gate resistance minimizes ringing and simplifies RC gate drive design. |
| 6 | Drain (D) | Main power output; connected to exposed copper thermal pad on bottom for direct PCB heat sinking. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including temperature cycling, humidity bias, and mechanical shock per Rev. D test plan. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-critical for motor control reliability. |
| TrenchFET® architecture | Delivers 20 % lower RDS(on) vs. planar P-channel MOSFETs at same die size, reducing board area and thermal footprint. |
| 175 °C operation | Enables placement in high-temperature zones (e.g., near engine bay electronics) without thermal throttling or derating. |
| Low Qgd/Qg ratio | 0.29 (19 nC / 65 nC) - Improves Miller immunity and reduces risk of shoot-through in half-bridge configurations. |
Applications
| Body Control Module (BCM) | Seat/Mirror Actuator Control |
|---|---|
Use Scenario: High-side power switching for door lock actuators, interior lighting, and window lift motors in modern BCMs. IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V loads; operates in static ON/OFF and PWM modes up to 20 kHz. Use Value: Low RDS(on) minimizes self-heating during extended hold states; AEC-Q101 qualification ensures 15+ year field reliability. |
Use Scenario: Bidirectional motor control for power seats and side mirrors using discrete H-bridge topology. IC Role / Device Role / Timing Role: Upper-leg P-channel switch in dual-MOSFET half-bridge; handles reverse recovery and freewheeling current via integrated body diode. Use Value: -0.80 V VSD at -10 A reduces conduction loss during flyback, improving efficiency over Schottky-assisted designs. |
| Engine Bay Fan Control | Commercial Vehicle Lighting |
Use Scenario: PWM-driven radiator cooling fan in 24 V heavy-duty trucks, subject to wide ambient temperature swings (-40 °C to +125 °C). IC Role / Device Role / Timing Role: High-side load switch with fast turn-off (75 ns td(off)) to suppress voltage spikes during abrupt shutdown. Use Value: 64.8 mJ EAS absorbs inductive energy without clamping, eliminating need for TVS diodes in cost-sensitive designs. |
Use Scenario: Overvoltage-protected tail light and brake light switching in Class 8 trucks with 24 V nominal systems. IC Role / Device Role / Timing Role: Reverse-polarity and load-dump protected high-side switch; withstands -60 V VDS during battery jump-start events. Use Value: Full -60 V rating provides 2× margin over 24 V system transients, meeting ISO 7637-2 Pulse 1/2/5a requirements without external protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, higher RDS(on) (0.3 Ω), no AEC-Q101 qualification, 150 °C TJ max. | Requires heatsink and external transient protection; suitable only for non-automotive industrial use. | Choose only if legacy TO-220 layout must be retained and automotive qualification is not required. |
| DMT6009LPS-13 | PowerDI 5060 package, similar RDS(on) (0.024 Ω), AEC-Q101 qualified, but lower ID (-28 A) and smaller thermal pad. | Limited to lower-power loads; less robust under sustained 30+ A conditions due to higher RthJA (90 °C/W). | Select when board space is tighter than thermal budget, and peak current stays below 25 A. |
Compared with IRF9530NPBF and DMT6009LPS-13, SQJ457EP-T2_GE3 uniquely balances automotive qualification, high-current capability (-36 A), low thermal resistance (RthJC = 2.2 °C/W), and compact PowerPAK SO-8L form factor-making it optimal for next-generation ECU power stages where reliability, density, and thermal performance are co-constrained.
Availability
SQJ457EP-T2_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, commercial vehicle power distribution, and industrial motor control requiring stable component supply across long production lifecycles.
Supply support for SQJ457EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ457EP-T2_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel family, engineered specifically for high-reliability, high-temperature power switching in demanding automotive subsystems where failure is not an option.
FAQ
What is the maximum junction temperature rating for SQJ457EP-T2_GE3?
The SQJ457EP-T2_GE3 is rated for a maximum junction temperature of +175 °C, fully compliant with AEC-Q101 requirements for under-hood automotive applications. This rating is validated through high-temperature operating life (HTOL) and temperature cycling tests, allowing direct placement near heat sources without thermal derating in most ECU layouts.
Does SQJ457EP-T2_GE3 require a gate resistor for stable switching?
Yes, SQJ457EP-T2_GE3 benefits from an external gate resistor (typically 5–22 Ω) to dampen ringing caused by parasitic inductance in the gate loop. Its measured gate resistance is 1.19 Ω, and the low Qgd/Qg ratio helps suppress Miller-induced turn-on, but a series resistor remains essential for EMI control and driver protection in production-grade automotive designs.
Is SQJ457EP-T2_GE3 pin-compatible with other PowerPAK SO-8L P-channel MOSFETs?
No-SQJ457EP-T2_GE3 has a specific pinout (S-S-S-G-D-S-S-S) optimized for low-inductance source routing, and while the PowerPAK SO-8L footprint is standardized, pin function mapping varies across Vishay's P-channel portfolio. Always verify pin assignment against the official SQJ457EP-T2_GE3 datasheet before substituting, especially in high-frequency or high-current layouts.
Can SQJ457EP-T2_GE3 be used in synchronous rectification applications?
No-SQJ457EP-T2_GE3 is a P-channel enhancement-mode MOSFET designed for high-side switching, not synchronous rectification. Its body diode forward voltage (-0.80 V) and lack of optimized reverse recovery characteristics make it unsuitable for AC-DC or DC-DC converter secondary-side rectification, where N-channel devices with fast trr and low Qrr are preferred.
What is the recommended PCB pad layout for SQJ457EP-T2_GE3?
The recommended minimum PCB pad layout for SQJ457EP-T2_GE3 follows Vishay document 63818: a 7.25 mm × 8.25 mm thermal pad with 0.82 mm wide solder mask openings for the exposed drain, plus 0.51 mm × 2.31 mm source pads and 0.41 mm × 0.595 mm gate pad. Use at least 2 oz. copper and thermal vias under the drain pad to achieve RthJA ≤ 40 °C/W in production boards.
SQJ457EP-T2_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ457EP-T2_GE3 FAQ
1.How can I place an order for SQJ457EP-T2_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ457EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ457EP-T2_GE3 reliable?
The price and inventory of SQJ457EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ457EP-T2_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ457EP-T2_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ457EP-T2_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ457EP-T2_GE3?
SQJ457EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ457EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ457EP-T2_GE3?
For technical support, including SQJ457EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ457EP-T2_GE3 requirements.
6.How does Aetrix verify that SQJ457EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ457EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ457EP-T2_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ457EP-T2_GE3?
All SQJ457EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ457EP-T2_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ457EP-T2_GE3 part is unused and in its original packaging.
Return procedure for SQJ457EP-T2_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQJ457EP-T2_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
