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Vishay Siliconix SQJ460AEP-T1_BE3
- Part No.:
- SQJ460AEP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ460AEP-T1_BE3.pdf
- Description:
- N-CHANNEL 60-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,843
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Product details
Overview
SQJ460AEP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 58 A continuous drain current at TC = 25 °C, and RDS(on) of 8.7 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, making it suitable for high-reliability engine control, transmission, and battery management systems.
For engineers reviewing the SQJ460AEP-T1_BE3 datasheet, SQJ460AEP-T1_BE3 pinout, SQJ460AEP-T1_BE3 application, or SQJ460AEP-T1_BE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive (9.4 mΩ), robust avalanche energy rating (61 mJ), and PowerPAK® SO-8L leadless package optimized for thermal performance in space-constrained automotive PCBs.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Qg = 71 nC (typ.) and Qgd = 12.5 nC (typ.) at VDS = 30 V. Its gate threshold voltage is tightly specified (1.5–2.5 V), enabling reliable turn-on with standard 3.3 V or 5 V microcontroller outputs.
The device features a built-in body diode with VSD = 0.8–1.2 V at IF = 7.5 A and ISM = 180 A pulsed source current capability. Thermal design is supported by RthJC = 2.2 °C/W and RthJA = 68 °C/W (PCB mount), confirming suitability for thermally demanding under-hood environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V automotive architectures and transient overvoltage protection |
| RDS(on) @ VGS = 10 V | 8.7 mΩ - Enables <1 W conduction loss at 33 A continuous current (TC = 125 °C) |
| RDS(on) @ VGS = 4.5 V | 9.4 mΩ - Ensures full enhancement with 4.5 V logic-level gate drive, eliminating need for level shifters |
| ID (continuous) | 58 A @ TC = 25 °C - Supports high-current load switching in motor drivers and DC-DC converters |
| EAS | 61 mJ - Withstands single-pulse inductive energy without failure in solenoid or relay drive applications |
| TJ range | −55 to +175 °C - Certified for operation in extreme under-hood ambient conditions per AEC-Q101 |
| Qg | 71 nC (typ.) - Balances switching speed and gate driver power requirements in 100–500 kHz SMPS designs |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, surface-mount, 5.13 mm × 6.15 mm footprint). Exposed copper drain pad on bottom enables low-inductance, high-current routing and enhanced thermal transfer to PCB copper planes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce package resistance and improve current sharing in high-ID operation |
| 4 (G) | Gate | Single gate terminal located adjacent to source pins for minimized gate loop inductance |
| 5, 6, 7, 8 (D) | Drain | Four drain terminals connected to large bottom-side copper pad-primary thermal and current path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and ESD testing-no additional qualification required for Tier 1 programs |
| TrenchFET® technology | Delivers 15 % lower RDS(on) vs. planar MOSFETs at same die size, improving power density in compact ECUs |
| Low Qgd / Qg ratio (17.6 %) | Reduces Miller effect, enabling stable hard-switching at higher frequencies without oscillation |
| 175 °C maximum TJ | Allows derating margin for sustained operation in 125 °C under-hood ambient with minimal heatsinking |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for leadless packages |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid Battery Disconnect Switch |
|---|---|
|
Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with precise pulse-width modulation. Use Value: 9.4 mΩ RDS(on) at 4.5 V ensures full turn-on using MCU GPIO, while 61 mJ EAS absorbs inductive kickback without snubbers. |
Use Scenario: Bidirectional main contactor replacement in 48 V mild hybrid architectures requiring fail-safe isolation. IC Role / Device Role / Timing Role: High-current, high-reliability power switch managing battery-to-bus connection during start-stop cycles. Use Value: 175 °C TJ rating and AEC-Q101 qualification enable operation in high-temperature battery enclosures without derating penalties. |
| Electric Power Steering (EPS) Motor Phase Leg | Automotive HVAC Blower Motor Controller |
|
Use Scenario: Half-bridge low-side switch in three-phase EPS inverter driving brushless DC motors. IC Role / Device Role / Timing Role: Fast-switching, low-loss power stage component handling 30–50 A peak phase currents. Use Value: 71 nC total gate charge and 2.2 °C/W RthJC support efficient thermal management and <1 μs switching transitions at 20 kHz PWM. |
Use Scenario: PWM-controlled blower motor driver in climate control modules with variable airflow demands. IC Role / Device Role / Timing Role: High-efficiency, low-noise power switch modulating motor speed via duty-cycle control. Use Value: Low 0.8–1.2 V body diode forward voltage minimizes reverse recovery losses and audible noise during commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF100N04L3PBF | RDS(on) = 3.1 mΩ @ 10 V but only rated to 150 °C TJ and not AEC-Q101 qualified | Limited to non-safety-critical industrial or commercial motor drives | Use only where automotive qualification is not mandated and lower RDS(on) justifies higher cost and larger TO-220 package |
| STL220N6F7 | Same 60 V rating and AEC-Q101 qualified, but RDS(on) = 1.7 mΩ @ 10 V and uses PowerFLAT 5x6 package with different pinout | Requires PCB redesign due to non-pin-compatible layout and higher gate charge (105 nC) | Select when ultra-low conduction loss is prioritized and board space allows for larger footprint and thermal pad rework |
Compared with IRF100N04L3PBF and STL220N6F7, the SQJ460AEP-T1_BE3 delivers optimal balance of AEC-Q101 compliance, 4.5 V logic-level drive, and PowerPAK SO-8L thermal performance-making it the preferred choice for volume automotive power stages where qualification, layout reuse, and thermal efficiency are jointly critical.
Availability
SQJ460AEP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, 48 V battery disconnect systems, and electric power steering modules requiring stable component supply across multi-year automotive production cycles.
Supply support for SQJ460AEP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ460AEP-T1_BE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® SO-8L family, engineered specifically for high-current, high-temperature switching in next-generation vehicle electrification systems.
FAQ
What is the maximum continuous drain current rating for SQJ460AEP-T1_BE3 at 125 °C case temperature?
The SQJ460AEP-T1_BE3 supports 33.4 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits under sustained high-temperature operation and must be validated against actual PCB thermal design using RthJC = 2.2 °C/W and system-level cooling capacity. The SQJ460AEP-T1_BE3 maintains stable RDS(on) performance up to 175 °C junction temperature, enabling robust operation in demanding under-hood locations.
Is SQJ460AEP-T1_BE3 compatible with standard reflow soldering profiles for leadless packages?
Yes, SQJ460AEP-T1_BE3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C. The PowerPAK® SO-8L package requires careful stencil design and thermal profiling to ensure uniform heating of the exposed drain pad. Manual soldering with an iron is not recommended due to thermal mass and lack of visual solder fillet confirmation. The SQJ460AEP-T1_BE3 datasheet (www.vishay.com/doc?73257) provides the exact recommended profile and pad layout guidelines.
Does SQJ460AEP-T1_BE3 have integrated ESD protection on the gate terminal?
The SQJ460AEP-T1_BE3 does not include on-die ESD protection circuitry. Its gate-source leakage is specified at ±100 nA (max) at ±20 V, and gate oxide integrity relies on external handling precautions and board-level protection. For automotive applications, Vishay recommends incorporating gate resistors (typically 10–47 Ω) and TVS diodes in series with the gate drive path. This design practice applies directly to SQJ460AEP-T1_BE3 to prevent electrostatic damage during assembly and system operation.
How does the body diode performance of SQJ460AEP-T1_BE3 compare to discrete Schottky diodes in freewheeling applications?
The SQJ460AEP-T1_BE3 body diode has a forward voltage of 0.8–1.2 V at 7.5 A, which is higher than typical Schottky diodes (0.3–0.5 V), but offers integrated reverse recovery behavior with no external component count. Its ISM rating of 180 A supports high-current freewheeling in motor phases without secondary devices. In synchronous rectification topologies, the SQJ460AEP-T1_BE3 can be actively driven to bypass the body diode entirely-eliminating reverse recovery losses altogether. This dual-mode capability is intrinsic to the SQJ460AEP-T1_BE3 architecture.
Can SQJ460AEP-T1_BE3 be used in paralleled configurations for higher current handling?
Yes, SQJ460AEP-T1_BE3 supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across multiple devices. Layout symmetry-including matched gate trace lengths, shared source return paths, and identical thermal coupling to the PCB-is essential. Derating each unit by 10–15 % is recommended for reliability. The SQJ460AEP-T1_BE3's low 2.2 °C/W RthJC and four-source-terminal configuration facilitate balanced thermal distribution in parallel arrays used in high-power DC-DC converters and traction inverters.
SQJ460AEP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.7mOhm @ 10.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 106 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2654 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ460AEP-T1_BE3 FAQ
1.How can I place an order for SQJ460AEP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ460AEP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ460AEP-T1_BE3 reliable?
The price and inventory of SQJ460AEP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ460AEP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ460AEP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ460AEP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ460AEP-T1_BE3?
SQJ460AEP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ460AEP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ460AEP-T1_BE3?
For technical support, including SQJ460AEP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ460AEP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ460AEP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ460AEP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ460AEP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ460AEP-T1_BE3?
All SQJ460AEP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ460AEP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ460AEP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ460AEP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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