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Vishay Siliconix SQJ460AEP-T1_GE3
- Part No.:
- SQJ460AEP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ460AEP-T1_GE3.pdf
- Description:
- MOSFET N-CH 60V 32A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:1,815
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Product details
Overview
SQJ460AEP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V (D–S), 32 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature - optimized for high-efficiency DC-DC converters and motor control in engine management systems.
For engineers reviewing the SQJ460AEP-T1_GE3 datasheet, SQJ460AEP-T1_GE3 pinout, SQJ460AEP-T1_GE3 application, or SQJ460AEP-T1_GE3 equivalent, key selection criteria include RDS(on) of 9.6 mΩ @ VGS = 10 V, AEC-Q101 qualification, PowerPAK SO-8L package thermal performance (RthJC = 1.8 °C/W), and robust UIS capability.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Qg = 71 nC (typ) and Qgd = 12.5 nC (typ) at VDS = 30 V, enabling high-frequency operation in synchronous buck regulators. Its gate threshold voltage (VGS(th)) ranges from 1.5 V to 2.5 V, supporting 4.5 V logic-level drive while maintaining tight parametric distribution.
The device integrates a robust body diode with VSD = 0.8–1.2 V @ IF = 10 A and is 100 % Rg and UIS tested per production flow. Thermal design leverages the PowerPAK SO-8L's exposed-drain copper pad for low-junction-to-case resistance (1.8 °C/W), critical for sustained 32 A conduction in under-hood automotive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 48 V nominal battery systems with 20 % transient margin |
| RDS(on) @ 10 V | 9.6 mΩ - enables <1 W conduction loss at 32 A in high-current power stages |
| RDS(on) @ 4.5 V | 12.0 mΩ - ensures full enhancement with standard 5 V microcontroller GPIOs |
| ID (continuous) | 32 A @ TC = 25 °C - sustains peak load currents in starter-generator inverters |
| EAS | 72 mJ - withstands inductive energy spikes during fault interruption in motor drives |
| RthJC | 1.8 °C/W - allows direct heatsinking via PCB copper to manage >25 W dissipation |
| AEC-Q101 | Qualified - certified for automotive powertrain and chassis applications per stress test requirements |
Pinout & Package
Package: PowerPAK® SO-8L - leadless surface-mount package with exposed drain pad (D) on bottom side for thermal and electrical connection; dimensions 5.13 mm × 6.15 mm × 1.07 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 (D) | Drain | Exposed copper drain pad (bottom) serves as primary thermal path and high-current return node |
| 4 (G) | Gate | Single gate terminal located adjacent to source for minimized gate loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 9.6 mΩ RDS(on) in compact PowerPAK SO-8L, reducing board area vs. TO-252 alternatives |
| 100 % Rg and UIS tested | Ensures gate robustness and avalanche reliability without screening-induced field failures |
| AEC-Q101 qualified | Validated for automotive powertrain use including engine control units and electric power steering |
| 175 °C max TJ | Supports operation in under-hood environments where ambient exceeds 125 °C |
| Low Qgd/Qg ratio | 12.5/71 nC = 0.176 - improves hard-switching efficiency and reduces Miller-induced shoot-through risk |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems with 12 V supply and PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: Primary power switch controlling injector coil current; requires fast turn-on/off and low RDS(on) to minimize heat in confined ECU enclosures. Use Value: 9.6 mΩ RDS(on) limits conduction loss to <1.0 W at 32 A peak, while 175 °C rating ensures reliability at elevated under-hood temperatures. | Use Scenario: Synchronous rectification in bidirectional 48 V–12 V DC-DC converters for mild hybrid vehicles, operating at 200–500 kHz switching frequency. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET; demands low Qgd, tight VGS(th) distribution, and robust body diode recovery. Use Value: 12.5 nC Qgd and 0.8–1.2 V VSD enable efficient high-frequency rectification with minimal reverse recovery loss. |
| Electric Power Steering (EPS) Motor Phase Leg | Automotive HVAC Blower Motor Inverter |
Use Scenario: Half-bridge phase-leg switch in 3-phase EPS motor drivers, handling 30 A RMS current with 100 kHz PWM and regenerative braking. IC Role / Device Role / Timing Role: High-current N-channel switch in inverter leg; must sustain pulsed avalanche events during short-circuit faults. Use Value: 72 mJ EAS and 38 A IAS provide margin against inductive energy during overcurrent shutdown. | Use Scenario: PWM-controlled blower motor driver in climate control systems, operating continuously at 15–25 A with thermal cycling between -40 °C and +125 °C ambient. IC Role / Device Role / Timing Role: Main power switch in H-bridge or single-ended topology; requires stable RDS(on) across temperature and AEC-Q101 compliance. Use Value: RDS(on) drift limited to ≤2× nominal (0.020 Ω @ 175 °C) ensures predictable thermal rise over full automotive temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 11.5 mΩ @ 10 V; TO-252 package; RthJA = 62 °C/W (PCB mount) | Larger footprint; higher thermal resistance limits continuous current to ~25 A at same board area | Choose when legacy TO-252 layout exists and lower cost outweighs thermal performance loss |
| STL220N6F7 | RDS(on) = 1.8 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified | Lower RDS(on) but higher gate charge (Qg = 120 nC); optimized for ultra-high efficiency, not high-frequency switching | Prefer for <100 kHz applications where conduction loss dominates; avoid in >250 kHz converters due to slower switching |
Compared with IRF7470PBF and STL220N6F7, SQJ460AEP-T1_GE3 delivers optimal balance of low RDS(on), moderate Qg, and industry-leading thermal resistance in a compact AEC-Q101-compliant package - making it ideal for space-constrained, thermally demanding automotive power stages operating above 100 kHz.
Availability
SQJ460AEP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply and automotive-grade traceability.
Supply support for SQJ460AEP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJ460AEP-T1_GE3 belongs to Vishay's TrenchFET® Automotive Power MOSFET family, engineered specifically for high-reliability, high-current switching in under-hood and chassis systems where thermal resilience and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum continuous drain current rating for SQJ460AEP-T1_GE3 at 125 °C case temperature?
The SQJ460AEP-T1_GE3 maintains a continuous drain current rating of 32 A even at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design enabled by the PowerPAK SO-8L package and 175 °C maximum junction temperature rating - allowing sustained high-current operation in thermally challenging automotive environments without derating.
Is SQJ460AEP-T1_GE3 suitable for 4.5 V gate drive applications?
Yes, SQJ460AEP-T1_GE3 is fully compatible with 4.5 V gate drive, delivering RDS(on) = 12.0 mΩ at VGS = 4.5 V and ID = 15 A. Its gate threshold voltage (VGS(th)) of 1.5–2.5 V ensures reliable enhancement with standard 5 V logic outputs, making SQJ460AEP-T1_GE3 appropriate for microcontroller-driven motor control and DC-DC converter applications without level-shifting circuitry.
Does SQJ460AEP-T1_GE3 have avalanche capability, and what is its rated single-pulse energy?
Yes, SQJ460AEP-T1_GE3 is 100 % UIS (Unclamped Inductive Switching) tested and rated for single-pulse avalanche energy (EAS) of 72 mJ at TJ = 25 °C with L = 0.1 mH. This capability enables robust fault handling in inductive load circuits such as fuel injectors and motor windings, where SQJ460AEP-T1_GE3 can safely absorb stored magnetic energy during abrupt current interruption without failure.
What is the thermal resistance from junction to case (RthJC) for SQJ460AEP-T1_GE3, and how does it impact heatsinking?
The junction-to-case thermal resistance (RthJC) of SQJ460AEP-T1_GE3 is 1.8 °C/W, measured from junction to the exposed drain pad. This low value enables highly effective heatsinking directly through the PCB's internal copper layers or external metal-core substrates - allowing SQJ460AEP-T1_GE3 to dissipate over 25 W with modest temperature rise, critical for compact automotive power modules where airflow is limited.
How does the PowerPAK SO-8L package of SQJ460AEP-T1_GE3 differ from standard SO-8 in terms of thermal and electrical performance?
The PowerPAK SO-8L package used by SQJ460AEP-T1_GE3 replaces conventional leads with an exposed copper drain pad on the bottom surface, providing direct thermal conduction path and eliminating bond-wire inductance. Unlike standard SO-8, it achieves RthJC = 1.8 °C/W (vs. >30 °C/W for leaded SO-8) and supports 32 A continuous current - making SQJ460AEP-T1_GE3 significantly more capable in power density and thermal management than legacy SO-8 MOSFETs.
SQJ460AEP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.6mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 106 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4795 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ460AEP-T1_GE3 FAQ
1.How can I place an order for SQJ460AEP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ460AEP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ460AEP-T1_GE3 reliable?
The price and inventory of SQJ460AEP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ460AEP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ460AEP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ460AEP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ460AEP-T1_GE3?
SQJ460AEP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ460AEP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ460AEP-T1_GE3?
For technical support, including SQJ460AEP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ460AEP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ460AEP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ460AEP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ460AEP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ460AEP-T1_GE3?
All SQJ460AEP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ460AEP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ460AEP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ460AEP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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