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Vishay Siliconix SQJ460AEP-T2_GE3
- Part No.:
- SQJ460AEP-T2_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ460AEP-T2_GE3.pdf
- Description:
- MOSFET N-CH 60V 58A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,780
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Product details
Overview
SQJ460AEP-T2_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 58 A continuous drain current at TC = 25 °C, and 0.0087 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, making it suitable for high-reliability engine control, transmission solenoid drivers, and 48 V mild-hybrid power stages.
For engineers reviewing the SQJ460AEP-T2_GE3 datasheet, SQJ460AEP-T2_GE3 pinout, SQJ460AEP-T2_GE3 application, or SQJ460AEP-T2_GE3 equivalent, key selection criteria include its PowerPAK® SO-8L leadless package thermal performance (RthJC = 2.2 °C/W), low gate charge (Qg = 71 nC typ), and robust avalanche energy rating (EAS = 61 mJ).
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in DC-DC converters and load-switching applications. Its gate threshold voltage (VGS(th) = 1.5–2.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers, while its Crss = 118–148 pF supports stable operation under high dv/dt conditions.
The device integrates a body diode with forward voltage VSD = 0.8–1.2 V at IF = 7.5 A and ISM = 180 A pulsed source current capability. Its safe operating area (SOA) is defined up to 100 ms at 25 °C ambient, with RDS(on) drift limited to ≤18.3 mΩ at TJ = 175 °C and ID = 10.7 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 48 V automotive bus and industrial SMPS primary-side switching |
| RDS(on) @ VGS = 10 V | 0.0087 Ω - Enables <1 W conduction loss at 33 A, critical for thermally constrained engine bay modules |
| ID (continuous) | 58 A @ TC = 25 °C - Supports high-current solenoid and pump drivers without external heatsinking |
| Qg | 71 nC (typ) - Reduces gate drive power and switching losses in 100–500 kHz DC-DC stages |
| RthJC | 2.2 °C/W - Allows direct thermal coupling to PCB copper or heatsink for >50 W power dissipation |
| EAS | 61 mJ - Withstands single-pulse inductive energy from relay or motor coil turn-off |
| TJ range | –55 to +175 °C - Meets under-hood temperature requirements per AEC-Q101 stress testing |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 6.15 mm × 5.13 mm × 1.07 mm (E × D × A), FR4 PCB mount with 100 % copper on both sides.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 7, 8 | Source (S) | Common source connection tied to exposed bottom thermal pad - provides low-inductance return path and primary heat conduction path |
| 4 | Gate (G) | Control terminal requiring <2.5 V threshold; gate resistance Rg = 0.3–2.0 Ω limits ringing during fast switching |
| 6 | Drain (D) | Main power output terminal; connected internally to top-side copper paddle - forms primary thermal interface to PCB via soldered bottom side |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UIS testing - eliminates qualification overhead for Tier 1 suppliers |
| TrenchFET® architecture | Delivers 15 % lower RDS(on) vs. planar MOSFETs at same die size - improves power density in space-constrained ECUs |
| Low Crss / Ciss ratio | Crss/Ciss ≈ 5.6 % - minimizes Miller effect and enables stable operation with gate resistors <10 Ω |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - supports global automotive environmental compliance |
| 175 °C TJ max | Enables placement near heat sources (e.g., inverters, turbochargers) without derating - extends system lifetime in harsh environments |
Applications
| Engine Control Unit (ECU) Load Switch | 48 V Mild-Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side switching of fuel injector or ignition coil drivers in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch controlling 12–48 V loads with <100 ns turn-off to meet precise injection timing windows. Use Value: RDS(on) = 0.0087 Ω limits I²R loss to <0.5 W at 7.5 A peak, reducing thermal stress in sealed ECU housings. | Use Scenario: Synchronous rectification in 48 V–12 V bidirectional buck-boost converters for regenerative braking. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with Qg = 71 nC enabling efficient 300 kHz operation without excessive gate drive loss. Use Value: 175 °C rating allows operation adjacent to SiC half-bridge without thermal throttling - maintains >95 % efficiency across full temperature range. |
| Transmission Solenoid Driver | On-Board Charger (OBC) Precharge Circuit |
Use Scenario: Driving linear or PWM-controlled hydraulic solenoids in automatic transmissions. IC Role / Device Role / Timing Role: Robust power switch handling 5–30 A DC pulses with repetitive avalanche capability (IAS = 35 A). Use Value: EAS = 61 mJ absorbs energy from solenoid inductance during PWM turn-off - eliminates need for external snubbers. | Use Scenario: Precharging high-voltage battery capacitors before main contactor closure in EV OBCs. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch limiting inrush current during 400–800 V ramp-up. Use Value: 58 A continuous rating supports >2 kW precharge power; PowerPAK SO-8L thermal design enables 2× longer duty cycle vs. SO-8 packages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | RDS(on) = 0.0022 Ω @ 10 V (lower), but ID = 220 A - larger die, higher Qg = 145 nC | Better for ultra-low-loss high-current inverters; less suitable for compact ECUs due to SO-8 footprint mismatch | Select STL220N6F7AG only when board space allows TO-263-7 and gate drive can support higher Qg |
| IRF7470PBF | RDS(on) = 0.012 Ω @ 10 V (higher), PD = 52 W (lower), RthJC = 3.0 °C/W (worse) | Legacy SO-8 package with inferior thermal performance - requires larger copper area for same power | IRF7470PBF may be used in cost-sensitive non-automotive designs where AEC-Q101 is not required |
Compared with STL220N6F7AG and IRF7470PBF, SQJ460AEP-T2_GE3 delivers optimal balance of low RDS(on), moderate Qg, AEC-Q101 compliance, and PowerPAK SO-8L thermal efficiency - making it the preferred choice for space- and reliability-constrained automotive power stages.
Availability
SQJ460AEP-T2_GE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild-hybrid converters, and transmission solenoid drivers requiring stable component supply across automotive production lifecycles.
Supply support for SQJ460AEP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ460AEP-T2_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in next-generation 48 V architectures and engine management systems.
FAQ
What is the maximum continuous drain current rating for SQJ460AEP-T2_GE3 at 125 °C case temperature?
The SQJ460AEP-T2_GE3 supports 33.4 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within its 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain TC ≤ 125 °C under full load.
Is SQJ460AEP-T2_GE3 compatible with standard SO-8 reflow profiles?
Yes, SQJ460AEP-T2_GE3 is qualified for standard lead-free reflow profiles with peak temperature up to 260 °C, per Vishay document 73257. Its PowerPAK SO-8L package uses exposed copper thermal pads that require controlled solder paste volume and stencil design to ensure void-free interconnection - manual soldering with an iron is not recommended.
Does SQJ460AEP-T2_GE3 have integrated ESD protection?
No, SQJ460AEP-T2_GE3 does not include on-die ESD protection circuitry. Its gate-source leakage (IGSS) is specified at ±100 nA max, and gate oxide integrity relies on proper handling and PCB layout practices - including gate series resistors and TVS clamping if exposed to system-level transients.
What is the typical gate-to-source threshold voltage range for SQJ460AEP-T2_GE3?
The SQJ460AEP-T2_GE3 has a typical gate-to-source threshold voltage (VGS(th)) range of 1.5 V to 2.5 V at ID = 250 μA, with 2.0 V as the nominal value. This logic-level threshold enables direct drive from 3.3 V microcontrollers in automotive applications, though a gate driver is recommended for fast switching above 100 kHz to manage its 71 nC total gate charge.
How does the avalanche rating of SQJ460AEP-T2_GE3 support inductive load switching?
The SQJ460AEP-T2_GE3 is rated for 35 A single-pulse avalanche current (IAS) and 61 mJ single-pulse avalanche energy (EAS), allowing it to safely absorb inductive kickback from solenoids, relays, and motors without external clamping. This ruggedness eliminates snubber circuits in many automotive load-switching designs, reducing BOM count and board area - verified per AEC-Q101 transient overvoltage test conditions.
SQJ460AEP-T2_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.7mOhm @ 10.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 106 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2654 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ460AEP-T2_GE3 FAQ
1.How can I place an order for SQJ460AEP-T2_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ460AEP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ460AEP-T2_GE3 reliable?
The price and inventory of SQJ460AEP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ460AEP-T2_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ460AEP-T2_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ460AEP-T2_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ460AEP-T2_GE3?
SQJ460AEP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ460AEP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ460AEP-T2_GE3?
For technical support, including SQJ460AEP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ460AEP-T2_GE3 requirements.
6.How does Aetrix verify that SQJ460AEP-T2_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ460AEP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ460AEP-T2_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ460AEP-T2_GE3?
All SQJ460AEP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ460AEP-T2_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ460AEP-T2_GE3 part is unused and in its original packaging.
Return procedure for SQJ460AEP-T2_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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