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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ461EP-T2_GE3

Name: SQJ461EP-T2_GE3
Brand: Vishay Siliconix
SKU: SQJ461EP-T2_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ461EP-T2_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ461EP-T2_GE3.pdf

Description:: P-CHANNEL 60-V (D-S) 175C MOSFET

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Product details

Overview

SQJ461EP-T2_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, with R_DS(on) of 0.016 Ω at V_GS = -10 V and -30 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency high-side load switch in 12 V/24 V automotive power distribution systems.

For engineers reviewing the SQJ461EP-T2_GE3 datasheet, SQJ461EP-T2_GE3 pinout, SQJ461EP-T2_GE3 application, or SQJ461EP-T2_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, PowerPAK® SO-8L package thermal performance (R_thJC = 1.8 °C/W), and guaranteed 100% UIS testing for robustness in inductive switching.

Technical Context

This MOSFET employs Vishay's TrenchFET® technology to achieve low on-resistance and fast switching with controlled gate charge (Q_g = 90–140 nC). Its negative threshold voltage (-1.5 to -2.5 V) enables direct logic-level drive from automotive microcontrollers without level-shifting.

The device features integrated source-drain diode with V_SD = -0.8 to -1.2 V at -4.5 A, supporting bidirectional current handling in reverse-polarity protection and H-bridge configurations. Thermal design is enabled by its low R_thJC and validated PCB-mount R_thJA of 65 °C/W on 1" FR-4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Withstands full automotive load-dump transients up to ISO 7637-2 Pulse 5a (±60 V).
R_DS(on) @ V_GS = -10 V	0.016 Ω - Enables <1 W conduction loss at 30 A, critical for high-current battery disconnect circuits.
I_D Continuous @ T_C = 25 °C	-30 A - Supports high-power body control modules and seat/mirror motor drivers.
Q_g Total Gate Charge	90–140 nC - Determines driver strength requirement; compatible with standard automotive gate drivers (e.g., TC442x).
T_J Operating Range	-55 to +175 °C - Meets under-hood ambient requirements per AEC-Q101 stress test conditions.
E_AS Single-Pulse Avalanche Energy	125 mJ - Provides margin against inductive kickback in solenoid and relay driving applications.
R_thJC	1.8 °C/W - Enables efficient heat transfer to heatsink or copper plane, supporting >25 W power dissipation with minimal ΔT.

Pinout & Package

Package: PowerPAK® SO-8L (single-side thermal pad), 5.13 mm × 6.15 mm footprint, 1.07 mm height, with exposed drain copper on bottom side for enhanced thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Source (S)	Internally paralleled terminals - low-inductance, high-current return path; connects directly to ground plane.
6	Gate (G)	Control input requiring ≤ ±20 V rating; gate resistance R_g = 1.4–3.2 Ω supports stable turn-on/turn-off timing.
Drain (D)	Power output terminal	Exposed copper pad on underside - primary thermal and current path to PCB copper; not plated, no solder fillet required.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use across temperature, humidity, vibration, and lifetime reliability tests per JESD47.
100% UIS tested	Each unit undergoes unclamped inductive switching stress to ensure avalanche ruggedness in real-world faults.
TrenchFET® architecture	Delivers 25% lower R_DS(on) vs. planar P-channel MOSFETs at same die size, improving power density.
Halogen-free & RoHS compliant	Meets EU Directive 2002/95/EC and IEC 61249-2-21, supporting environmentally regulated vehicle programs.
Low Q_gd/Q_g ratio	Q_gd = 22 nC / Q_g ≈ 24% - minimizes Miller effect, enabling stable switching at >100 kHz in DC-DC pre-regulators.

Applications

Reverse Polarity Protection	Battery Disconnect Switch
Use Scenario: Installed in series with vehicle battery input to block reverse connection during jump-start or service. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as ideal diode replacement with near-zero forward drop. Use Value: Eliminates 0.7 V silicon diode loss, saving >5 W at 30 A and preventing thermal runaway in compact fuse boxes.	Use Scenario: Controls main 12 V supply to infotainment head unit during ignition-off sleep mode. IC Role / Device Role / Timing Role: Load switch enabling ultra-low quiescent current (<1 μA IDSS at -60 V) in always-on domains. Use Value: Reduces standby power by >95% vs. mechanical relay, extending battery life over 30-day parking cycles.
Seat/Mirror Motor Driver	H-Bridge Half-Bridge
Use Scenario: Drives bidirectional DC motors in power seat actuators using dual high-side configuration. IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side in half-bridge topology. Use Value: Leverages built-in source-drain diode (V_SD = -0.8 to -1.2 V) for freewheeling, eliminating external flyback diodes.	Use Scenario: One leg of an H-bridge controlling window lift motor direction and braking. IC Role / Device Role / Timing Role: High-side switch synchronized with complementary low-side to prevent shoot-through. Use Value: Fast turn-off delay (t_d(off) = 70–85 ns) and low C_iss (3920–4710 pF) enable precise PWM dead-time control below 100 ns.

Reverse Polarity Protection

Battery Disconnect Switch

Use Scenario: Installed in series with vehicle battery input to block reverse connection during jump-start or service.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as ideal diode replacement with near-zero forward drop.

Use Value: Eliminates 0.7 V silicon diode loss, saving >5 W at 30 A and preventing thermal runaway in compact fuse boxes.

Use Scenario: Controls main 12 V supply to infotainment head unit during ignition-off sleep mode.

IC Role / Device Role / Timing Role: Load switch enabling ultra-low quiescent current (<1 μA IDSS at -60 V) in always-on domains.

Use Value: Reduces standby power by >95% vs. mechanical relay, extending battery life over 30-day parking cycles.

Seat/Mirror Motor Driver

H-Bridge Half-Bridge

Use Scenario: Drives bidirectional DC motors in power seat actuators using dual high-side configuration.

IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side in half-bridge topology.

Use Value: Leverages built-in source-drain diode (V_SD = -0.8 to -1.2 V) for freewheeling, eliminating external flyback diodes.

Use Scenario: One leg of an H-bridge controlling window lift motor direction and braking.

IC Role / Device Role / Timing Role: High-side switch synchronized with complementary low-side to prevent shoot-through.

Use Value: Fast turn-off delay (t_d(off) = 70–85 ns) and low C_iss (3920–4710 pF) enable precise PWM dead-time control below 100 ns.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	TO-220 package, R_DS(on) = 0.3 Ω @ -10 V, 12 A rating, no AEC-Q101 qualification.	Requires heatsink; unsuitable for space-constrained automotive PCBs or extended temperature operation.	Select only for non-automotive industrial prototypes where thermal mass compensates for higher R_DS(on).
DMTH6016LPSQ-13	Same PowerPAK SO-8L package, R_DS(on) = 0.015 Ω @ -10 V, but rated for -40 V only and not AEC-Q101 qualified.	Limited to 12 V systems; lacks avalanche energy rating (E_AS) and UIS screening.	Acceptable for cost-sensitive 12 V consumer electronics, but not for automotive safety-critical loads.

Compared with IRF9530NPbF and DMTH6016LPSQ-13, SQJ461EP-T2_GE3 uniquely combines AEC-Q101 qualification, -60 V rating, 175 °C operation, and 125 mJ E_AS in a surface-mount thermal package-making it the only option for production automotive high-side switching above 20 A.

Availability

SQJ461EP-T2_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, battery management systems, and power seat/mirror actuation requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQJ461EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and automotive-grade validation.

The SQJ461EP-T2_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel family, engineered specifically for high-current, high-temperature switching in engine bay and chassis-mounted electronic control units.

FAQ

What is the maximum gate-source voltage rating for SQJ461EP-T2_GE3?

The SQJ461EP-T2_GE3 has a maximum gate-source voltage (V_GS) rating of ±20 V. Exceeding this limit risks permanent oxide damage. In automotive systems with noisy 12 V rails, designers should use a Zener clamp (e.g., 15 V) between gate and source to protect SQJ461EP-T2_GE3 during load dump events.

Is SQJ461EP-T2_GE3 suitable for reverse-battery protection in 24 V commercial vehicles?

Yes, SQJ461EP-T2_GE3 is rated for -60 V V_DS, exceeding ISO 16750-2 requirements for 24 V systems (up to -35 V transient). Its -30 A continuous current and 125 mJ E_AS ensure reliable blocking and fault energy absorption. The SQJ461EP-T2_GE3 must be mounted on ≥2 oz. copper with thermal vias to sustain 24 V load-dump pulses.

Does SQJ461EP-T2_GE3 require a gate resistor for automotive MCU drive?

Yes - a 10–22 Ω series gate resistor is recommended when driving SQJ461EP-T2_GE3 from automotive MCUs (e.g., Infineon AURIX™) to damp ringing and limit peak gate current. The SQJ461EP-T2_GE3's R_g = 1.4–3.2 Ω and Q_g = 90–140 nC make it sensitive to PCB trace inductance; improper gate routing can cause oscillation during turn-on.

How does the PowerPAK SO-8L package of SQJ461EP-T2_GE3 improve thermal performance versus SO-8?

The PowerPAK SO-8L package used in SQJ461EP-T2_GE3 exposes the drain on the bottom side, reducing R_thJC to 1.8 °C/W - 3× lower than standard SO-8. This allows SQJ461EP-T2_GE3 to dissipate 83 W at T_C = 25 °C, enabling smaller heatsinks or elimination thereof in PCB-limited designs like junction boxes.

What is the typical source-drain diode forward voltage of SQJ461EP-T2_GE3?

The SQJ461EP-T2_GE3's integrated source-drain diode exhibits V_SD = -0.8 to -1.2 V at -4.5 A and T_J = 25 °C. This low forward drop supports efficient freewheeling in motor drives and reduces power loss compared to discrete Schottky solutions, especially in compact layouts where board space for external diodes is unavailable.

SQJ461EP-T2_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 14.4A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4710 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ461EP-T2_GE3 FAQ

1.How can I place an order for SQJ461EP-T2_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ461EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ461EP-T2_GE3 reliable?

The price and inventory of SQJ461EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ461EP-T2_GE3 is usually 5 days.

3.What payment methods are accepted for SQJ461EP-T2_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ461EP-T2_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ461EP-T2_GE3?

SQJ461EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ461EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ461EP-T2_GE3?

For technical support, including SQJ461EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ461EP-T2_GE3 requirements.

6.How does Aetrix verify that SQJ461EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJ461EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ461EP-T2_GE3 meets industry standards.

7.What is the process for return or replacement of SQJ461EP-T2_GE3?

All SQJ461EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ461EP-T2_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ461EP-T2_GE3 part is unused and in its original packaging.

Return procedure for SQJ461EP-T2_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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