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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ464EP-T1_BE3

Name: SQJ464EP-T1_BE3
Brand: Vishay Siliconix
SKU: SQJ464EP-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ464EP-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ464EP-T1_BE3.pdf

Description:: N-CHANNEL 60-V (D-S) 175C MOSFET

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Product details

Overview

SQJ464EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 32 A continuous drain current at 25 °C, and 0.017 Ω R_DS(on) at V_GS = 10 V. It serves as a high-efficiency main or synchronous rectifier switch in 48 V mild-hybrid DC/DC converters and battery disconnect circuits operating up to 175 °C junction temperature.

For engineers reviewing the SQJ464EP-T1_BE3 datasheet, SQJ464EP-T1_BE3 pinout, SQJ464EP-T1_BE3 application, or SQJ464EP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS tested reliability, PowerPAK® SO-8L leadless package thermal performance (R_thJC = 3.3 °C/W), and low gate charge (Q_g = 29 nC typ) enabling high-frequency switching in automotive power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-reliability automotive power conversion. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) supports robust drive with standard 3.3 V or 5 V logic-level controllers, while the 1670 pF typical input capacitance (C_iss) and 4.9 nC gate-source charge (Q_gs) enable precise timing control in synchronous buck topologies.

The device integrates a body diode with 0.8–1.2 V forward voltage (V_SD) at 4.8 A and is characterized for avalanche energy (E_AS = 31 mJ) and pulsed current (I_DM = 130 A), supporting fault-tolerant operation in load dump and inductive switching scenarios common in engine control units and ADAS power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V nominal automotive systems including transient overvoltage conditions up to ISO 7637-2 Pulse 5a.
R_DS(on) @ V_GS = 10 V	0.017 Ω - Enables ≤ 5.5 W conduction loss at 18 A continuous current (T_C = 125 °C), critical for thermally constrained under-hood modules.
I_D Continuous	32 A @ T_C = 25 °C - Supports high-current motor drivers and DC/DC primary-side switches without forced air cooling.
Q_g	29 nC typ - Reduces gate drive power and enables >500 kHz switching in high-density power modules with minimal Miller effect.
R_thJC	3.3 °C/W - Allows direct thermal coupling to heatsink or PCB copper pour, delivering 15 W max power dissipation at T_C = 125 °C.
T_J Range	−55 to +175 °C - Qualified for engine bay, transmission control, and battery management applications per AEC-Q101 stress test requirements.
C_iss	1670 pF typ - Determines gate drive strength requirement and impacts EMI profile in hard-switched topologies.

Pinout & Package

Package: PowerPAK® SO-8L (leadless, surface-mount, dual-side thermal pad). Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H); exposed copper drain pad on bottom side for enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7, 8 (Drain pads)	Drain (D)	Primary high-current path; electrically and thermally connected to large bottom-side copper area-must be soldered to ≥1"² internal or external copper pour for R_thJA = 70 °C/W.
4	Gate (G)	Control terminal; requires low-inductance gate loop layout due to 0.91 Ω typical gate resistance and 29 nC total charge.
5, 6	Source (S)	Power return path and reference for gate drive; tied to PCB ground plane; source inductance directly affects switching speed and ringing.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests-enables drop-in deployment in safety-critical ECUs without requalification.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness-ensures predictable turn-off behavior and avalanche survival in real-world fault events.
PowerPAK® SO-8L package	Leadless construction with exposed drain pad delivers 2× lower R_thJC vs. standard SO-8, enabling higher power density in space-constrained modules like 48 V–12 V DC/DC bricks.
Low Q_gd/Q_gs ratio	4.9 nC / 4.9 nC = 1.0 - Minimizes Miller plateau duration and improves controllability during hard commutation, reducing shoot-through risk in half-bridge configurations.
175 °C maximum T_J	Supports operation in proximity to hot components (e.g., inverters, turbochargers) without derating-extends system uptime in high-ambient under-hood environments.

Applications

48 V Mild-Hybrid DC/DC Converter	Automotive Battery Disconnect Switch
Use Scenario: Step-down conversion from 48 V bus to 12 V for infotainment, ADAS cameras, and lighting systems in PHEVs. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET in interleaved buck converter operating at 300–500 kHz. Use Value: 0.017 Ω R_DS(on) and 29 nC Q_g reduce conduction and switching losses, achieving >95 % efficiency at 15 A output while maintaining T_J < 150 °C.	Use Scenario: High-side isolation switch between 48 V battery and downstream loads in vehicle start-stop and energy recovery systems. IC Role / Device Role / Timing Role: Load switch controlled via isolated gate driver; must sustain 60 V transients and interrupt 32 A fault current. Use Value: AEC-Q101 qualification and 31 mJ E_AS ensure reliable interruption of short-circuit faults without latch-up or thermal runaway.
Engine Control Unit (ECU) Power Stage	Electric Power Steering (EPS) Motor Driver
Use Scenario: Low-side driver for solenoid valves and fuel injectors requiring fast, repeatable turn-on/turn-off cycles. IC Role / Device Role / Timing Role: N-channel switch with logic-level gate drive (V_GS(th) = 2.0 V typ) interfaced directly to MCU GPIO. Use Value: 0.020 Ω R_DS(on) at V_GS = 4.5 V ensures < 0.5 V saturation voltage at 20 A, minimizing heat generation in sealed ECU enclosures.	Use Scenario: Half-bridge leg in three-phase inverter driving 48 V EPS brushless DC motor. IC Role / Device Role / Timing Role: High-frequency switching element with tight Q_g tolerance (±15 %) to maintain phase current symmetry. Use Value: 0.45–2.0 Ω R_g range and 11.5 ns max t_d(on) support precise PWM dead-time control and reduce torque ripple below audible thresholds.

48 V Mild-Hybrid DC/DC Converter

Automotive Battery Disconnect Switch

Use Scenario: Step-down conversion from 48 V bus to 12 V for infotainment, ADAS cameras, and lighting systems in PHEVs.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET in interleaved buck converter operating at 300–500 kHz.

Use Value: 0.017 Ω R_DS(on) and 29 nC Q_g reduce conduction and switching losses, achieving >95 % efficiency at 15 A output while maintaining T_J < 150 °C.

Use Scenario: High-side isolation switch between 48 V battery and downstream loads in vehicle start-stop and energy recovery systems.

IC Role / Device Role / Timing Role: Load switch controlled via isolated gate driver; must sustain 60 V transients and interrupt 32 A fault current.

Use Value: AEC-Q101 qualification and 31 mJ E_AS ensure reliable interruption of short-circuit faults without latch-up or thermal runaway.

Engine Control Unit (ECU) Power Stage

Electric Power Steering (EPS) Motor Driver

Use Scenario: Low-side driver for solenoid valves and fuel injectors requiring fast, repeatable turn-on/turn-off cycles.

IC Role / Device Role / Timing Role: N-channel switch with logic-level gate drive (V_GS(th) = 2.0 V typ) interfaced directly to MCU GPIO.

Use Value: 0.020 Ω R_DS(on) at V_GS = 4.5 V ensures < 0.5 V saturation voltage at 20 A, minimizing heat generation in sealed ECU enclosures.

Use Scenario: Half-bridge leg in three-phase inverter driving 48 V EPS brushless DC motor.

IC Role / Device Role / Timing Role: High-frequency switching element with tight Q_g tolerance (±15 %) to maintain phase current symmetry.

Use Value: 0.45–2.0 Ω R_g range and 11.5 ns max t_d(on) support precise PWM dead-time control and reduce torque ripple below audible thresholds.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	Higher R_DS(on) (0.02 Ω @ 10 V), TO-220 package, non-AEC-Q101 qualified	Limited to non-automotive industrial power supplies; lacks 175 °C rating and UIS screening	Select only for cost-sensitive non-automotive designs where thermal margin exceeds 40 °C and no transient immunity validation is required.
STL220N6F7	Same V_DS and R_DS(on) (0.017 Ω), PowerFLAT 5x6 package, AEC-Q101 qualified, but higher Q_g (40 nC)	Lower switching efficiency above 250 kHz; larger gate drive loss in high-frequency DC/DC converters	Prefer SQJ464EP-T1_BE3 when operating >300 kHz or when gate drive power budget is constrained.

Compared with IRF4905PbF and STL220N6F7, the SQJ464EP-T1_BE3 offers superior thermal performance (R_thJC = 3.3 °C/W), tighter Q_g distribution, and full AEC-Q101 compliance-making it the optimal choice for high-reliability, high-frequency automotive power stages where board space and thermal headroom are limited.

Availability

SQJ464EP-T1_BE3 is available at Aetrix Electronics and suitable for 48 V mild-hybrid DC/DC converters, automotive battery disconnect systems, and engine control unit power stages requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.

Supply support for SQJ464EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics engineered for automotive, industrial, and computing applications.

The SQJ464EP-T1_BE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, designed specifically for high-efficiency, high-temperature power conversion in 48 V architectures-including mild-hybrid vehicles, ADAS domain controllers, and electrified chassis systems.

FAQ

What is the maximum continuous drain current rating for SQJ464EP-T1_BE3 at 125 °C case temperature?

The SQJ464EP-T1_BE3 supports 18 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8L package and ensures safe operation within the 175 °C maximum junction temperature under sustained load conditions. The SQJ464EP-T1_BE3 maintains R_DS(on) ≤ 0.031 Ω at this condition, preserving efficiency in thermally demanding automotive environments.

Is SQJ464EP-T1_BE3 suitable for use in synchronous rectification applications?

Yes, the SQJ464EP-T1_BE3 is well-suited for synchronous rectification due to its low R_DS(on) (0.017 Ω @ 10 V), fast switching parameters (t_r = 8.9 ns typ, t_f = 8.8 ns typ), and low Q_gd/Q_gs ratio. Its body diode exhibits V_SD = 0.8–1.2 V at 4.8 A, enabling efficient reverse recovery control. In a 48 V–12 V buck converter, the SQJ464EP-T1_BE3 reduces rectifier losses by >40 % compared to Schottky solutions while maintaining AEC-Q101 reliability.

Does SQJ464EP-T1_BE3 require special PCB layout considerations due to its PowerPAK® SO-8L package?

Yes-the SQJ464EP-T1_BE3 uses a leadless PowerPAK® SO-8L package with an exposed copper drain pad on the bottom. To achieve the specified R_thJA = 70 °C/W, the drain pad must be connected to ≥1"² of 2 oz. copper on the PCB's inner or outer layer. Solder mask defined pads are recommended, and reflow profiles must comply with Vishay document 73257. Manual soldering with an iron is not recommended per datasheet note 4e.

What is the gate threshold voltage range for SQJ464EP-T1_BE3, and how does it affect drive compatibility?

The SQJ464EP-T1_BE3 has a gate threshold voltage (V_GS(th)) range of 1.5 V to 2.5 V at I_D = 250 μA, with a typical value of 2.0 V. This logic-level threshold allows direct drive from 3.3 V or 5 V microcontrollers without level-shifting, while maintaining noise immunity. At V_GS = 4.5 V, the device delivers R_DS(on) = 0.020 Ω-confirming robust enhancement mode operation essential for automotive gate drivers in noisy ECU environments. The SQJ464EP-T1_BE3 remains fully enhanced across its full −55 °C to +175 °C operating range.

How is avalanche capability specified for SQJ464EP-T1_BE3, and what does it mean for system design?

The SQJ464EP-T1_BE3 is rated for single-pulse avalanche energy (E_AS) of 31 mJ and single-pulse avalanche current (I_AS) of 25 A with L = 0.1 mH, per the Absolute Maximum Ratings table. This specification validates the device's ability to absorb inductive energy during unclamped switching events-such as relay coil de-energization or motor phase commutation-without failure. Designers can rely on this rating to eliminate external snubbers in many automotive power stages, simplifying BOM and improving reliability. The SQJ464EP-T1_BE3 undergoes 100 % UIS testing, ensuring every unit meets this spec.

SQJ464EP-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 7.1A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2086 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ464EP-T1_BE3 FAQ

1.How can I place an order for SQJ464EP-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ464EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ464EP-T1_BE3 reliable?

The price and inventory of SQJ464EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ464EP-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQJ464EP-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ464EP-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ464EP-T1_BE3?

SQJ464EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ464EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ464EP-T1_BE3?

For technical support, including SQJ464EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ464EP-T1_BE3 requirements.

6.How does Aetrix verify that SQJ464EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQJ464EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ464EP-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQJ464EP-T1_BE3?

All SQJ464EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ464EP-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ464EP-T1_BE3 part is unused and in its original packaging.

Return procedure for SQJ464EP-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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