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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ464EP-T1_GE3

Name: SQJ464EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ464EP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ464EP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ464EP-T1_GE3.pdf

Description:: MOSFET N-CH 60V 32A PPAK SO-8

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Product details

Overview

SQJ464EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 32 A continuous drain current at 25 °C, and 0.017 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.

For engineers reviewing the SQJ464EP-T1_GE3 datasheet, SQJ464EP-T1_GE3 pinout, SQJ464EP-T1_GE3 application, or SQJ464EP-T1_GE3 equivalent, this device delivers low conduction loss in PowerPAK® SO-8L packaging with validated 100 % R_g and UIS testing - critical for automotive powertrain and ADAS subsystems requiring robust transient immunity and thermal stability.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low R_DS(on) and fast switching with Q_g = 29 nC (typ.) and Q_gd = 4.9 nC (typ.) at V_DS = 30 V. Its gate threshold voltage is tightly distributed (1.5–2.5 V), enabling reliable turn-on with standard 3.3 V or 5 V logic-level drivers in automotive microcontroller interfaces.

The device features a built-in body diode with V_SD = 0.8–1.2 V at I_F = 4.8 A and supports unclamped inductive switching up to I_AS = 25 A and E_AS = 31 mJ - essential for freewheeling and regenerative braking circuits where diode recovery behavior impacts system efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V automotive systems and 12/24 V battery-fed loads with margin against load dump transients.
R_DS(on) @ V_GS = 10 V	0.017 Ω - Enables ≤ 5.5 W conduction loss at 18 A continuous current (T_C = 125 °C), reducing heatsink requirements.
I_D (continuous)	32 A @ T_C = 25 °C - Supports high-current motor drive stages without paralleling; derates to 18 A at T_C = 125 °C per thermal limits.
Q_g	29 nC (typ.) - Low gate charge enables efficient 100–500 kHz PWM operation with minimal driver power dissipation.
T_J range	−55 to +175 °C - Qualified for engine bay placement and meets AEC-Q101 stress test requirements for automotive reliability.
R_thJC	3.3 °C/W - Enables direct thermal coupling to PCB copper or heatsink for high-power density designs.

Pinout & Package

Package: PowerPAK® SO-8L (leadless, surface-mount, dual-side thermal pad). Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (D × E × A). Exposed drain pad on bottom provides primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (S)	Source	Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching.
5 (G)	Gate	Single gate input with R_g = 0.45–2 Ω - supports controlled turn-on/turn-off and minimizes ringing in noisy automotive environments.
6, 7, 8 (D)	Drain	Three drain terminals connected to exposed bottom copper pad - forms low-inductance, high-current path to PCB ground plane or heatsink.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HTRB, and UIS - eliminates need for additional qualification by Tier 1 suppliers.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in motor fault conditions.
Low R_DS(on) at 4.5 V	0.020 Ω - enables full enhancement with 5 V microcontroller GPIOs, eliminating level-shifting circuitry in cost-sensitive ECUs.
PowerPAK SO-8L thermal performance	R_thJC = 3.3 °C/W - allows >40 W power dissipation with modest heatsinking, supporting compact 48 V DC-DC converter designs.

Applications

Electric Power Steering (EPS) Motor Phase Switch	Automotive 48 V DC-DC Converter High-Side Switch
Use Scenario: Bidirectional H-bridge driving brushed or BLDC assist motor in EPS module under ambient temperatures up to 125 °C. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in half-bridge configuration, switched at 20–100 kHz with synchronous rectification. Use Value: Low R_DS(on) and 175 °C rating maintain <1.5 W conduction loss at 25 A peak, reducing thermal stress during parking maneuvers.	Use Scenario: Primary-side switch in non-isolated buck converter stepping 48 V nominal down to 12 V for legacy vehicle subsystems. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with 30 ns fall time and 13.2 ns fall time for minimal switching loss. Use Value: Q_gd/Q_g ratio of 0.17 enables clean zero-voltage switching transition, improving efficiency by ≥1.2 % vs. higher-R_DS(on) alternatives.
12 V Battery Disconnect Switch	ADAS Camera Module Power Sequencer
Use Scenario: Solid-state replacement for mechanical relay controlling main battery feed to infotainment and telematics modules. IC Role / Device Role / Timing Role: Single-pole, high-side load switch with integrated reverse polarity protection via body diode orientation. Use Value: 130 A pulsed drain current rating withstands cold-crank surge events; V_GS(th) distribution ensures consistent turn-on across −40 to +125 °C.	Use Scenario: Controlled power-up sequencing for multi-rail camera SoC with strict voltage ramp timing and inrush limiting. IC Role / Device Role / Timing Role: Soft-start enabled high-side switch using gate resistor network to limit dV/dt and prevent supply rail collapse. Use Value: Gate charge of 29 nC allows precise RC-controlled turn-on within 10–50 ms window, meeting ISO 16750-2 power-up profile requirements.

Electric Power Steering (EPS) Motor Phase Switch

Automotive 48 V DC-DC Converter High-Side Switch

Use Scenario: Bidirectional H-bridge driving brushed or BLDC assist motor in EPS module under ambient temperatures up to 125 °C.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in half-bridge configuration, switched at 20–100 kHz with synchronous rectification.

Use Value: Low R_DS(on) and 175 °C rating maintain <1.5 W conduction loss at 25 A peak, reducing thermal stress during parking maneuvers.

Use Scenario: Primary-side switch in non-isolated buck converter stepping 48 V nominal down to 12 V for legacy vehicle subsystems.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with 30 ns fall time and 13.2 ns fall time for minimal switching loss.

Use Value: Q_gd/Q_g ratio of 0.17 enables clean zero-voltage switching transition, improving efficiency by ≥1.2 % vs. higher-R_DS(on) alternatives.

12 V Battery Disconnect Switch

ADAS Camera Module Power Sequencer

Use Scenario: Solid-state replacement for mechanical relay controlling main battery feed to infotainment and telematics modules.

IC Role / Device Role / Timing Role: Single-pole, high-side load switch with integrated reverse polarity protection via body diode orientation.

Use Value: 130 A pulsed drain current rating withstands cold-crank surge events; V_GS(th) distribution ensures consistent turn-on across −40 to +125 °C.

Use Scenario: Controlled power-up sequencing for multi-rail camera SoC with strict voltage ramp timing and inrush limiting.

IC Role / Device Role / Timing Role: Soft-start enabled high-side switch using gate resistor network to limit dV/dt and prevent supply rail collapse.

Use Value: Gate charge of 29 nC allows precise RC-controlled turn-on within 10–50 ms window, meeting ISO 16750-2 power-up profile requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 0.019 Ω @ 10 V; Q_g = 32 nC; PowerFLAT 5×6 package; R_thJC = 3.5 °C/W	Higher gate charge increases driver losses at >300 kHz; slightly larger footprint (5.0 × 6.0 mm vs. 5.13 × 6.15 mm)	Preferred for cost-sensitive 12 V systems where 3.5 °C/W thermal resistance is acceptable.
IRF7470PBF	R_DS(on) = 0.022 Ω @ 10 V; Q_g = 24 nC; SO-8 package; R_thJC = 4.5 °C/W; not AEC-Q101 qualified	Lacks automotive qualification and has higher R_DS(on); lower Q_g benefits ultra-high-frequency operation but thermal limitation restricts power handling.	Suitable only for non-automotive industrial controls where AEC-Q101 is not mandated.

Compared with STL220N6F7 and IRF7470PBF, the SQJ464EP-T1_GE3 offers the lowest R_DS(on) and best thermal resistance in an AEC-Q101-qualified PowerPAK SO-8L package - making it optimal for space-constrained, thermally demanding automotive power stages where conduction loss dominates total loss budget.

Availability

SQJ464EP-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering, 48 V DC-DC conversion, and battery disconnect applications requiring stable component supply across automotive production lifecycles.

Supply support for SQJ464EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJ464EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for under-hood power switching in 12 V, 24 V, and 48 V systems where AEC-Q101 compliance, thermal resilience, and low R_DS(on) are mandatory.

FAQ

What is the maximum continuous drain current rating for SQJ464EP-T1_GE3 at 125 °C case temperature?

The SQJ464EP-T1_GE3 supports 18 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within its R_thJC = 3.3 °C/W thermal resistance envelope. The SQJ464EP-T1_GE3 maintains stable R_DS(on) up to 175 °C junction temperature, enabling robust performance in high-ambient environments.

Is SQJ464EP-T1_GE3 compatible with lead-free reflow soldering processes?

Yes, the SQJ464EP-T1_GE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C, per the manufacturer's soldering recommendations. Its PowerPAK SO-8L package is explicitly designed for Pb-free assembly, and the datasheet references Vishay document 73257 for the full reflow profile. Manual soldering with an iron is not recommended due to the leadless construction and exposed copper terminations.

Does SQJ464EP-T1_GE3 include integrated ESD protection on the gate terminal?

No, the SQJ464EP-T1_GE3 does not integrate gate ESD protection diodes. As stated in the datasheet, gate-source leakage (I_GSS) is specified at ±100 nA max with V_GS = ±20 V, confirming absence of clamping structures. System-level ESD protection - such as series gate resistors and TVS devices - must be implemented externally per ISO 10605 requirements for automotive applications.

What is the typical gate-to-source threshold voltage range for SQJ464EP-T1_GE3?

The SQJ464EP-T1_GE3 has a guaranteed gate-source threshold voltage (V_GS(th)) range of 1.5 V to 2.5 V at I_D = 250 μA, with a typical value of 2.0 V. This tight distribution ensures predictable turn-on behavior across temperature and process variation, supporting reliable operation with 3.3 V and 5 V logic-level drivers without external level shifting.

Can SQJ464EP-T1_GE3 be used in synchronous rectification topologies?

Yes, the SQJ464EP-T1_GE3 is suitable for synchronous rectification due to its low R_DS(on) (0.017 Ω @ 10 V), fast switching parameters (t_f = 8.8 ns typ.), and well-characterized body diode (V_SD = 0.8–1.2 V at 4.8 A). Its 100 % UIS testing confirms robustness against reverse recovery stress, making it appropriate for secondary-side switching in isolated DC-DC converters used in ADAS and infotainment systems.

SQJ464EP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 7.1A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2086 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ464EP-T1_GE3 FAQ

1.How can I place an order for SQJ464EP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ464EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ464EP-T1_GE3 reliable?

The price and inventory of SQJ464EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ464EP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJ464EP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ464EP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ464EP-T1_GE3?

SQJ464EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ464EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ464EP-T1_GE3?

For technical support, including SQJ464EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ464EP-T1_GE3 requirements.

6.How does Aetrix verify that SQJ464EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJ464EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ464EP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJ464EP-T1_GE3?

All SQJ464EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ464EP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ464EP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJ464EP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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