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Vishay Siliconix SQJ464EP-T2_GE3
- Part No.:
- SQJ464EP-T2_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ464EP-T2_GE3.pdf
- Description:
- MOSFET N-CH 60V 32A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,020
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Product details
Overview
SQJ464EP-T2_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 32 A continuous drain current at 25 °C, and 0.017 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ464EP-T2_GE3 datasheet, SQJ464EP-T2_GE3 pinout, SQJ464EP-T2_GE3 application, or SQJ464EP-T2_GE3 equivalent, this device delivers verified 100 % Rg and UIS testing, low gate charge (29 nC typ.), and PowerPAK® SO-8L leadless packaging optimized for thermal performance in space-constrained automotive modules.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics. Its RDS(on) remains stable across -55 °C to +175 °C, and its 3.3 °C/W junction-to-case thermal resistance supports high-power density layouts when mounted on copper-clad PCBs.
The device features a robust body diode with 130 A pulsed source current capability and 0.8–1.2 V forward voltage at 4.8 A, enabling synchronous rectification and bidirectional current handling in H-bridge configurations without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin |
| RDS(on) @ VGS = 10 V | 0.017 Ω - Enables ≤ 5.5 W conduction loss at 18 A continuous current (TC = 125 °C) |
| ID (continuous) | 32 A @ TC = 25 °C - Supports high-current motor drivers and starter solenoid interfaces |
| Qg (total gate charge) | 29 nC typ. - Reduces driver power demand and enables efficient 100 kHz+ PWM operation |
| TJ max | +175 °C - Qualified for engine compartment placement without derating in harsh thermal environments |
| RthJC | 3.3 °C/W - Allows direct thermal coupling to heatsink or copper plane for >40 W power dissipation |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics per Rev. D standard |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, surface-mount), dimensions 6.15 mm × 5.13 mm × 1.07 mm (L × W × H), exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Source) | Source terminal (common) | Four parallel source pads reduce package inductance and improve current sharing in high-di/dt switching |
| 5 (Gate) | Control input | Low gate resistance (0.91 Ω typ.) minimizes ringing and enables clean turn-on/turn-off with standard gate drivers |
| 6, 7, 8 (Drain) | Power output / heat sink | Three large drain terminals connect to internal die drain metallization and serve as primary thermal path to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 20 % lower RDS(on) vs. planar MOSFETs of same die size, improving efficiency in 48 V mild-hybrid systems |
| 100 % Rg and UIS tested | Ensures gate robustness against ESD and avalanche energy survival up to 31 mJ without parameter shift |
| PowerPAK® SO-8L package | Reduces thermal resistance by 40 % vs. standard SO-8, enabling 15 W higher power handling at same board area |
| Body diode Qrr optimized | Low reverse recovery charge supports zero-voltage switching in synchronous buck converters |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 moisture sensitivity |
Applications
| Electric Power Steering (EPS) | Automotive DC-DC Converters |
|---|---|
Use Scenario: High-side switch in three-phase inverter driving 12 V brushless EPS motor. IC Role / Device Role / Timing Role: Main power switch controlling phase current with <10 ns rise/fall times and 32 A peak load capability. Use Value: Low RDS(on) reduces conduction loss by 1.8 W per phase vs. legacy 0.025 Ω devices, extending motor controller thermal margin. |
Use Scenario: Primary-side high-side switch in 12 V → 48 V bi-directional DC-DC converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 200 kHz with 29 nC gate charge enabling low driver loss. Use Value: 175 °C rating allows operation without forced air cooling in confined under-hood enclosures. |
| Battery Disconnect Unit (BDU) | Start-Stop System Solenoid Driver |
Use Scenario: Isolation switch between 12 V battery and vehicle sub-systems during sleep mode. IC Role / Device Role / Timing Role: Low-leakage (≤1 μA IDSS) high-reliability switch with AEC-Q101 qualification for 15-year service life. Use Value: 100 % UIS testing guarantees survivability during load dump transients up to 60 V sustained. |
Use Scenario: High-current driver for starter solenoid coil in engine start-stop cycles. IC Role / Device Role / Timing Role: Pulse-rated switch delivering 130 A pulsed drain current for 300 μs activation bursts. Use Value: 0.017 Ω RDS(on) limits voltage drop to <2.2 V at 130 A, ensuring reliable solenoid pull-in under cold-cranking conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF100N04L3TRPBF | RDS(on) = 0.0037 Ω @ 10 V but only rated to 150 °C; not AEC-Q101 qualified | Limited to non-safety-critical industrial DC-DC; unsuitable for under-hood automotive use | Select only for cost-sensitive non-automotive designs where 175 °C operation is unnecessary |
| STL220N6LF7AG | Same 60 V/32 A rating and AEC-Q101 qualified, but in LFPAK56 package with RthJC = 2.5 °C/W | Better thermal performance but requires different PCB footprint and stencil design | Prefer when thermal budget is tighter than layout flexibility; verify gate drive compatibility due to 3.5 nC lower Qg |
Compared with IRF100N04L3TRPBF and STL220N6LF7AG, the SQJ464EP-T2_GE3 provides the optimal balance of AEC-Q101 compliance, 175 °C capability, and PowerPAK SO-8L footprint compatibility-making it the default choice for new automotive power designs requiring proven reliability and drop-in manufacturability.
Availability
SQJ464EP-T2_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), battery disconnect units (BDU), and 48 V mild-hybrid DC-DC converters requiring stable component supply across multi-year automotive production programs.
Supply support for SQJ464EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with over 50 years of power electronics innovation.
The SQJ464EP-T2_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® SO-8L family, engineered specifically for high-efficiency, high-temperature switching in engine control, chassis, and electrification systems.
FAQ
What is the maximum continuous drain current rating for SQJ464EP-T2_GE3 at 125 °C case temperature?
The SQJ464EP-T2_GE3 supports 18 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating ensures safe operation in high-ambient under-hood environments while maintaining 0.031 Ω RDS(on) at 10 V gate drive, critical for thermal stability in motor control inverters.
Does SQJ464EP-T2_GE3 require special rework procedures due to its leadless PowerPAK® SO-8L package?
Yes - manual soldering with a soldering iron is not recommended for SQJ464EP-T2_GE3. The PowerPAK® SO-8L's exposed copper drain pad requires controlled reflow profiling per Vishay document 73257, with peak temperature ≤260 °C. Rework must use infrared or hot-air stations calibrated for leadless packages to avoid solder joint voiding or pad delamination.
Is SQJ464EP-T2_GE3 suitable for synchronous rectification in automotive DC-DC converters?
Yes - SQJ464EP-T2_GE3 is well-suited for synchronous rectification due to its low RDS(on) (0.017 Ω), fast switching (tr/tf = 8.9/8.8 ns), and optimized body diode with 0.8–1.2 V VSD at 4.8 A. Its 100 % UIS testing ensures robustness during reverse recovery events common in high-frequency buck converters.
How does the thermal performance of SQJ464EP-T2_GE3 compare to standard SO-8 packaged MOSFETs?
SQJ464EP-T2_GE3 achieves 3.3 °C/W junction-to-case thermal resistance - ~40 % lower than typical SO-8 MOSFETs (~5.5 °C/W). This is enabled by its exposed drain pad and triple-drain-terminal construction, allowing >40 W power dissipation on 1"² FR4 PCB with 2 oz copper, versus ~25 W for conventional SO-8 equivalents.
What gate drive voltage range is required to fully enhance SQJ464EP-T2_GE3?
SQJ464EP-T2_GE3 has a gate threshold voltage (VGS(th)) of 1.5–2.5 V, but full enhancement requires VGS ≥ 4.5 V to achieve RDS(on) ≤ 0.020 Ω. For minimum conduction loss, 10 V gate drive is recommended, delivering 0.017 Ω RDS(on) and supporting robust noise immunity in automotive EMI environments.
SQJ464EP-T2_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2086 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ464EP-T2_GE3 FAQ
1.How can I place an order for SQJ464EP-T2_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ464EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ464EP-T2_GE3 reliable?
The price and inventory of SQJ464EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ464EP-T2_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ464EP-T2_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ464EP-T2_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ464EP-T2_GE3?
SQJ464EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ464EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ464EP-T2_GE3?
For technical support, including SQJ464EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ464EP-T2_GE3 requirements.
6.How does Aetrix verify that SQJ464EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ464EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ464EP-T2_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ464EP-T2_GE3?
All SQJ464EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ464EP-T2_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ464EP-T2_GE3 part is unused and in its original packaging.
Return procedure for SQJ464EP-T2_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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