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Vishay Siliconix SQJ474EP-T1_BE3
- Part No.:
- SQJ474EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ474EP-T1_BE3.pdf
- Description:
- N-CHANNEL 100-V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:18,000
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Product details
Overview
SQJ474EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 26 A continuous drain current at 25 °C, and 0.030 Ω RDS(on) at VGS = 10 V. It serves as a high-efficiency main switch in 12 V/24 V automotive power distribution systems, including body control modules and motor drivers operating up to 175 °C junction temperature.
For engineers reviewing the SQJ474EP-T1_BE3 datasheet, SQJ474EP-T1_BE3 pinout, SQJ474EP-T1_BE3 application, or SQJ474EP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS tested reliability, PowerPAK SO-8L leadless package thermal performance (RthJC = 3.3 °C/W), and verified 24 mJ single-pulse avalanche energy handling capability.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in DC-DC converters and load-switch applications. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with 3.3 V and 5 V microcontrollers, while its 14.5 nC typical total gate charge supports efficient PWM operation at frequencies up to 500 kHz.
The device features an integrated source-drain diode with 0.86 V forward voltage at 10 A and is characterized for stable operation across -55 °C to +175 °C junction temperature range. Thermal design leverages the PowerPAK SO-8L's exposed-drain copper pad for direct PCB heat sinking, achieving 70 °C/W junction-to-ambient resistance on a 1"² FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports full 24 V automotive battery transients (ISO 7637-2 Pulse 5a) without breakdown |
| RDS(on) @ VGS = 10 V | 0.030 Ω - Enables ≤ 7.8 W conduction loss at 15.8 A continuous current (P = I²R) |
| ID (continuous, TC = 25 °C) | 26 A - Sustains high-current loads such as HVAC blower motors or solenoid drivers |
| EAS | 24 mJ - Withstands inductive energy spikes in relay and motor commutation circuits |
| RthJC | 3.3 °C/W - Allows direct thermal coupling to heatsink or copper pour for high-power density layouts |
| Qg (total) | 14.5 nC - Reduces gate driver power demand and switching losses in 100–200 kHz SMPS designs |
| TJ max | +175 °C - Qualified for under-hood engine compartment environments per AEC-Q101 |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, exposed-drain thermal pad), 5.13 mm × 6.15 mm footprint, 1.07 mm height. Bottom-side copper drain pad provides primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 (D) | Drain | Exposed copper drain pad (bottom side) - must be soldered to large PCB copper area for thermal management |
| 4 (G) | Gate | Single gate terminal located adjacent to source pins - minimizes gate loop inductance for stable high-speed switching |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTOL, TC, UHAST, and ESD HBM ≥ 2 kV |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - no field failures due to gate oxide rupture or avalanche overstress |
| TrenchFET® architecture | Delivers 22% lower RDS(on) than planar equivalents at same die size - improves power density in space-constrained ECUs |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - suitable for global automotive supply chain traceability |
| 175 °C maximum junction temperature | Enables operation in high-ambient zones (e.g., near exhaust manifolds or transmission control units) without derating |
Applications
| Automotive Body Control Module (BCM) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side load switching for headlamp, fog lamp, and interior lighting circuits in centralized BCMs. IC Role / Device Role / Timing Role: Main power switch controlling up to 26 A resistive/inductive loads with PWM dimming support. Use Value: Low RDS(on) reduces thermal load on PCB, enabling compact 2-layer board designs without external heatsinks. |
Use Scenario: Synchronous rectification in bidirectional buck-boost converters interfacing 12 V and 48 V domains. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast turn-off (tf = 40–65 ns) to minimize reverse recovery losses. Use Value: 0.035 Ω RDS(on) at 4.5 V gate drive ensures efficiency >97% at 20 A output current under cold-crank conditions. |
| Electric Power Steering (EPS) Motor Driver | Commercial Vehicle Air Suspension Solenoid Driver |
Use Scenario: Half-bridge high-side switch in three-phase inverter driving brushless EPS assist motor. IC Role / Device Role / Timing Role: High-reliability power switch subjected to repetitive avalanche events during motor phase commutation. Use Value: 24 mJ EAS rating prevents failure during short-circuit fault recovery cycles required by ISO 26262 ASIL-B functional safety compliance. |
Use Scenario: Direct-drive solenoid valve control in air suspension leveling systems for trucks and buses. IC Role / Device Role / Timing Role: Robust load switch handling 15 A inductive surges with integrated body diode clamping. Use Value: 0.86 V VSD forward voltage limits power dissipation during freewheeling, reducing thermal stress on PCB traces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A peak, RDS(on) = 0.0035 Ω @ 10 V - larger die, higher current, TO-263 package | Targeted at high-power traction inverters; not pin-compatible; requires different layout and thermal interface | Select when >100 A pulsed current or <5 mΩ RDS(on) is mandatory; avoid for space-constrained BCMs due to 10.0 × 14.9 mm footprint |
| IRF100N10D2 | 100 V, 100 A, RDS(on) = 0.0095 Ω @ 10 V - D2PAK package, non-AEC-Q101 qualified | Industrial-grade only; lacks automotive qualification testing and 175 °C operation guarantee | Acceptable for non-automotive 24 V industrial motor drives where AEC-Q101 is not mandated; not recommended for OEM production |
Compared with STL220N10F7 and IRF100N10D2, the SQJ474EP-T1_BE3 delivers optimal balance of AEC-Q101 compliance, PowerPAK SO-8L compactness, and 26 A continuous capability - making it the preferred choice for cost-sensitive, thermally constrained automotive modules requiring zero layout rework.
Availability
SQJ474EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid converters, electric power steering systems, commercial vehicle air suspension controllers, and industrial motor drives requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for SQJ474EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets since 1962.
The SQJ474EP-T1_BE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-reliability, high-temperature power switching in next-generation vehicle electrification systems.
FAQ
What is the maximum continuous drain current rating for SQJ474EP-T1_BE3 at 125 °C case temperature?
The SQJ474EP-T1_BE3 supports 15 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package under sustained high-temperature operation. Designers must ensure adequate PCB copper area and airflow to maintain case temperature below this limit during full-load conditions. The SQJ474EP-T1_BE3 maintains stable RDS(on) performance up to 175 °C junction temperature, enabling reliable operation even with transient thermal excursions.
Is SQJ474EP-T1_BE3 qualified to AEC-Q101, and what does that mean for automotive use?
Yes, SQJ474EP-T1_BE3 is AEC-Q101 qualified, meaning it has passed accelerated stress tests including high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and electrostatic discharge (HBM ≥ 2 kV). This qualification confirms suitability for automotive electronic control units where reliability over 15+ years and operation in harsh under-hood environments are mandatory. The SQJ474EP-T1_BE3 also undergoes 100 % Rg and UIS screening - critical for safety-critical functions like brake-by-wire or EPS.
What is the gate threshold voltage range for SQJ474EP-T1_BE3, and how does it affect microcontroller compatibility?
The SQJ474EP-T1_BE3 has a gate threshold voltage (VGS(th)) range of 1.5 V to 2.5 V at ID = 250 μA, ensuring reliable turn-on with standard 3.3 V and 5 V logic-level microcontrollers. This low threshold enables full enhancement with minimal gate drive overhead, reducing system power consumption in always-on modules like telematics or gateway ECUs. The SQJ474EP-T1_BE3 maintains stable switching characteristics across temperature, with VGS(th) drift less than ±0.3 V from -55 °C to +175 °C - critical for consistent timing in safety-critical applications.
How does the PowerPAK SO-8L package of SQJ474EP-T1_BE3 improve thermal performance compared to standard SO-8?
The PowerPAK SO-8L package of SQJ474EP-T1_BE3 replaces conventional leads with an exposed copper drain pad on the bottom surface, reducing junction-to-case thermal resistance to 3.3 °C/W - nearly 5× better than standard SO-8 packages. This allows direct thermal coupling to PCB copper pours or heatsinks, enabling higher power density without external cooling. The SQJ474EP-T1_BE3 achieves 70 °C/W junction-to-ambient resistance on a 1"² FR4 board, supporting 26 A continuous operation within safe thermal limits. Proper solder stencil design and reflow profile are essential to ensure void-free solder joints under the drain pad.
What is the single-pulse avalanche energy rating for SQJ474EP-T1_BE3, and why is it important in motor control?
The SQJ474EP-T1_BE3 is rated for 24 mJ single-pulse avalanche energy (EAS) at L = 0.1 mH, verified per JEDEC JESD24-1. This specification ensures survivability during inductive flyback events in motor drivers, solenoid controls, and relay switching - where stored magnetic energy must be safely dissipated in the MOSFET channel. In electric power steering systems, this capability prevents catastrophic failure during rapid direction reversal or stall conditions. The SQJ474EP-T1_BE3 undergoes 100 % UIS testing, guaranteeing each unit meets this energy rating before shipment.
SQJ474EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ474EP-T1_BE3 FAQ
1.How can I place an order for SQJ474EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ474EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ474EP-T1_BE3 reliable?
The price and inventory of SQJ474EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ474EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ474EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ474EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ474EP-T1_BE3?
SQJ474EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ474EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ474EP-T1_BE3?
For technical support, including SQJ474EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ474EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ474EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ474EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ474EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ474EP-T1_BE3?
All SQJ474EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ474EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ474EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ474EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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