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Vishay Siliconix SQJ474EP-T2_GE3
- Part No.:
- SQJ474EP-T2_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ474EP-T2_GE3.pdf
- Description:
- MOSFET N-CH 100V 26A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,277
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Product details
Overview
SQJ474EP-T2_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 26 A continuous drain current at 25 °C, and 0.030 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, serving as a high-reliability switching element in DC-DC converters, motor control stages, and battery protection circuits in under-hood automotive systems.
For engineers reviewing the SQJ474EP-T2_GE3 datasheet, SQJ474EP-T2_GE3 pinout, SQJ474EP-T2_GE3 application, or SQJ474EP-T2_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, PowerPAK SO-8L package layout, and validated alternatives for automotive power design validation and BOM optimization.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature environments. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with 3.3 V and 5 V microcontrollers, while its 14.5 nC typical total gate charge supports efficient PWM operation at frequencies up to 500 kHz.
The device integrates a body diode with 0.86 V typical forward voltage at 10 A and exhibits 24 mJ single-pulse avalanche energy rating. Thermal resistance from junction-to-case is 3.3 °C/W, enabling direct heatsinking through the exposed drain pad on the bottom side of the PowerPAK SO-8L package.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 12 V/24 V automotive bus applications with transient margin |
| RDS(on) @ VGS = 10 V | 0.030 Ω - Enables ≤ 7.8 W conduction loss at 26 A, reducing thermal load in compact layouts |
| RDS(on) @ VGS = 4.5 V | 0.035 Ω - Ensures stable on-state performance with standard logic-level gate drivers |
| ID (continuous, TC = 25 °C) | 26 A - Supports high-current loads such as solenoid drivers and BLDC phase switches |
| Junction temperature range | –55 to +175 °C - Validated for under-hood placement without derating in engine control units |
| Qg (total gate charge) | 14.5 nC typical - Reduces gate drive power requirement and switching transition time |
| RthJC | 3.3 °C/W - Allows direct thermal path to PCB copper or external heatsink via exposed drain pad |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, surface-mount), dimensions 5.13 mm × 6.15 mm × 1.07 mm, with exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 (D) | Drain | Exposed copper drain pad (bottom side) serves as primary thermal path and high-current return node |
| 4 (G) | Gate | Single gate input located adjacent to source terminals to minimize gate loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per JESD47 |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching ruggedness |
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure-of-merit than planar MOSFETs for improved efficiency in hard-switched topologies |
| 175 °C maximum TJ | Enables operation in high-ambient zones (e.g., near exhaust manifolds) without forced cooling |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material requirements |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling injector coil energization with <10 ns turn-off delay and <65 ns fall time. Use Value: 0.030 Ω RDS(on) minimizes I²R heating during extended duty cycles; 175 °C rating ensures reliability across engine temperature transients. |
Use Scenario: Primary-side synchronous rectifier in 48 V–12 V bidirectional DC-DC converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 200–300 kHz with low Qg and fast dynamic response. Use Value: 14.5 nC Qg reduces gate driver losses; 3.3 °C/W RthJC enables thermal management without discrete heatsinks. |
| Electric Power Steering (EPS) Motor Phase Leg | On-Board Charger (OBC) Battery Disconnect Switch |
Use Scenario: Half-bridge leg in three-phase inverter driving 12 V EPS brushless DC motor. IC Role / Device Role / Timing Role: High-current, high-ruggedness switch handling repetitive 65 A pulsed currents and 22 A avalanche events. Use Value: 24 mJ EAS and 22 A IAS provide margin against inductive kickback during fault conditions. |
Use Scenario: Isolation switch between traction battery and OBC input during charging state transitions. IC Role / Device Role / Timing Role: Normally-open, high-voltage disconnect element with low leakage (<1 μA at 100 V, 25 °C). Use Value: 1 μA max IDSS at 100 V ensures minimal standby power loss; AEC-Q101 qualification guarantees long-term contactor reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | RDS(on) = 2.2 mΩ @ 10 V (lower), but 100 V rating and PowerFLAT 5x6 package differ in thermal profile and footprint | Higher current density suits smaller form factor designs; requires revalidation of PCB thermal relief and gate drive layout | Select when board space is constrained and thermal interface allows lower RthJA target |
| IRFH5020TRPBF | RDS(on) = 0.022 Ω @ 10 V (lower), PQFN 5x6 mm package, no AEC-Q101 qualification documented | Not approved for automotive safety-critical functions; suitable only for non-AEC applications with identical electrical specs | Choose only for industrial or commercial designs where AEC-Q101 is not mandated |
Compared with STL220N10F7 and IRFH5020TRPBF, the SQJ474EP-T2_GE3 provides AEC-Q101 assurance, proven 175 °C operation, and PowerPAK SO-8L's established manufacturability-making it the preferred choice for production automotive systems requiring zero-defect reliability and long-term supply continuity.
Availability
SQJ474EP-T2_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering modules, and on-board chargers requiring stable component supply, full traceability, and automotive-grade lifecycle support.
Supply support for SQJ474EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJ474EP-T2_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine bay and chassis-mounted electronic control units.
FAQ
What is the maximum continuous drain current rating for SQJ474EP-T2_GE3 at 125 °C case temperature?
The SQJ474EP-T2_GE3 supports 15 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures safe operation in high-ambient automotive environments without exceeding the 175 °C maximum junction temperature. The SQJ474EP-T2_GE3 maintains stable RDS(on) performance up to this temperature point.
Does SQJ474EP-T2_GE3 have an integrated Schottky diode or require an external freewheeling diode?
The SQJ474EP-T2_GE3 includes a parasitic body diode inherent to its vertical N-channel MOSFET structure-not a discrete Schottky diode. Its forward voltage is 0.86 V typical at 10 A and VGS = 0, with 65 A pulsed source current capability. For high-frequency synchronous rectification, an external MOSFET is recommended; for low-frequency flyback, the body diode is usable but must be evaluated for reverse recovery behavior in the target circuit. The SQJ474EP-T2_GE3 datasheet does not specify reverse recovery time.
Is SQJ474EP-T2_GE3 compatible with lead-free reflow soldering profiles?
Yes, SQJ474EP-T2_GE3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature tolerance up to 260 °C. The PowerPAK SO-8L package uses matte tin plating and is designed for standard Pb-free SAC305 profiles. Manual soldering with an iron is not recommended due to thermal mass and leadless construction-reflow is the only validated assembly method for SQJ474EP-T2_GE3.
What is the gate threshold voltage range for SQJ474EP-T2_GE3, and how does it affect microcontroller drive compatibility?
The SQJ474EP-T2_GE3 has a gate threshold voltage (VGS(th)) range of 1.5 V to 2.5 V at ID = 250 μA, ensuring reliable turn-on with 3.3 V and 5 V logic-level microcontrollers. Its low threshold enables full enhancement at standard IO voltages, while the 0.035 Ω RDS(on) at VGS = 4.5 V confirms strong saturation even with marginally driven gates. This makes SQJ474EP-T2_GE3 suitable for direct MCU GPIO drive in space-constrained automotive modules.
How is thermal performance characterized for SQJ474EP-T2_GE3, and what is the significance of RthJC = 3.3 °C/W?
SQJ474EP-T2_GE3 specifies RthJC = 3.3 °C/W from junction to case (drain pad), measured under standardized test conditions. This value quantifies the thermal resistance of the internal silicon-to-package interface and enables accurate junction temperature estimation when the drain pad is thermally connected to a heatsink or large copper area. Unlike RthJA, RthJC is largely independent of PCB layout-making it critical for thermal design of SQJ474EP-T2_GE3 in high-power automotive applications.
SQJ474EP-T2_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ474EP-T2_GE3 FAQ
1.How can I place an order for SQJ474EP-T2_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ474EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ474EP-T2_GE3 reliable?
The price and inventory of SQJ474EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ474EP-T2_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ474EP-T2_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ474EP-T2_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ474EP-T2_GE3?
SQJ474EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ474EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ474EP-T2_GE3?
For technical support, including SQJ474EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ474EP-T2_GE3 requirements.
6.How does Aetrix verify that SQJ474EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ474EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ474EP-T2_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ474EP-T2_GE3?
All SQJ474EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ474EP-T2_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ474EP-T2_GE3 part is unused and in its original packaging.
Return procedure for SQJ474EP-T2_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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