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Vishay Siliconix SQJ476EP-T1_BE3
- Part No.:
- SQJ476EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ476EP-T1_BE3.pdf
- Description:
- N-CHANNEL 100-V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:2,507
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Product details
Overview
SQJ476EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 23 A continuous drain current at 25 °C, and 0.038 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, serving as a high-reliability switching element in DC-DC converters and motor control circuits in engine management systems.
For engineers reviewing the SQJ476EP-T1_BE3 datasheet, SQJ476EP-T1_BE3 pinout, SQJ476EP-T1_BE3 application, or SQJ476EP-T1_BE3 equivalent, key selection criteria include its 100 % Rg and UIS tested reliability, PowerPAK® SO-8L leadless package thermal performance (RthJC = 3.3 °C/W), and verified 175 °C operation under automotive thermal stress conditions.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with standard 3.3 V and 5 V microcontrollers, while the 10 nC typical total gate charge supports efficient PWM operation at frequencies up to 500 kHz.
The device integrates a body diode with 0.88–1.2 V forward voltage at 10 A and exhibits stable RDS(on) over temperature - 0.065 Ω at 125 °C and 0.081 Ω at 175 °C - ensuring predictable power loss in under-hood applications where ambient temperatures exceed 105 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands full automotive load-dump transients without breakdown |
| RDS(on) @ VGS = 10 V | 0.038 Ω - Enables ≤ 8.7 W conduction loss at 15 A continuous current |
| RDS(on) @ VGS = 4.5 V | 0.050 Ω - Supports logic-level gate drive in low-voltage control architectures |
| ID (continuous, TC = 25 °C) | 23 A - Delivers high current density in compact PowerPAK SO-8L footprint |
| Junction Temp Range | −55 to +175 °C - Certified for under-hood placement in modern ICE and hybrid powertrain modules |
| Qg (total) | 10 nC typical - Reduces gate driver power demand and switching energy loss |
| RthJC | 3.3 °C/W - Enables direct thermal coupling to heatsink or copper plane for >15 W sustained dissipation |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (JEDEC MO-271 variant). Exposed copper drain pad on bottom enables low-inductance, high-current routing and superior thermal transfer to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Drain (D) | Internally connected to exposed bottom thermal pad - primary current path and thermal interface |
| 4 | Gate (G) | Control input with 2.1 Ω typical gate resistance - limits dV/dt-induced shoot-through risk |
| 5, 6 | Source (S) | Return path for channel current; electrically tied to source metallization and top-side solder pads |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTOL, TC, UHAST, and ESD HBM ≥ 2 kV |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching ruggedness (EAS = 16 mJ) |
| TrenchFET® architecture | Delivers 25 % lower RDS(on) × Qg figure-of-merit vs. planar MOSFETs in same package |
| PowerPAK SO-8L package | Reduces RthJA by 40 % vs. standard SO-8; eliminates lead inductance for cleaner switching waveforms |
| 175 °C operation | Rated for continuous use in proximity to exhaust manifolds, turbochargers, and transmission control units |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed switching of 12 V fuel injectors in gasoline direct injection systems with peak currents up to 18 A. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling injector coil energization/de-energization with <10 ns turn-off delay. Use Value: 0.050 Ω RDS(on) at 4.5 V gate drive ensures minimal voltage drop during battery-sag conditions (down to 6 V). |
Use Scenario: Primary-side synchronous rectifier in 48 V–12 V bidirectional DC-DC converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: High-frequency (200–300 kHz) hard-switched power switch handling 20 A RMS current. Use Value: 10 nC Qg and 3.3 °C/W RthJC enable >95 % efficiency at full load with passive heatsinking. |
| Electric Power Steering (EPS) Motor Phase Leg | On-Board Charger (OBC) AC-DC Front-End Switch |
Use Scenario: Half-bridge leg in three-phase inverter driving 24 V EPS brushless motor with regenerative braking. IC Role / Device Role / Timing Role: High-side/low-side switching element with integrated body diode conducting reverse recovery current during PWM dead-time. Use Value: 0.88 V VSD at 10 A minimizes conduction loss during freewheeling, reducing heat generation in confined EPS housing. |
Use Scenario: Active clamp or PFC switch in 3.3 kW OBC front-end operating at 100 kHz with 400 V bus. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated MOSFET handling repetitive unclamped inductive energy during fault events. Use Value: 16 mJ EAS rating and 18 A IAS support reliable operation during line surge and soft-start transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | RDS(on) = 0.022 Ω @ 10 V but rated only to 150 °C; no AEC-Q101 documentation publicly available | Higher current density but limited thermal margin in sustained under-hood operation | Select when peak efficiency at 25 °C outweighs long-term reliability at 175 °C |
| IRF100B216 | Same 100 V rating and PowerSO-8 package, but RDS(on) = 0.045 Ω @ 10 V and Qg = 14 nC; AEC-Q101 qualified | Slower switching and higher gate drive loss; better suited for <100 kHz applications | Select when cost sensitivity and proven field history outweigh need for lowest RDS(on) × Qg |
Compared with STL220N10F7 and IRF100B216, the SQJ476EP-T1_BE3 uniquely balances 175 °C capability, AEC-Q101 compliance, and sub-10 nC gate charge - making it optimal for thermally constrained, high-frequency automotive power stages where both reliability and dynamic performance are critical.
Availability
SQJ476EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and on-board chargers requiring stable component supply across extended automotive production lifecycles.
Supply support for SQJ476EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ476EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine bay and powertrain control modules.
FAQ
What is the maximum continuous drain current rating for SQJ476EP-T1_BE3 at 125 °C case temperature?
The SQJ476EP-T1_BE3 supports 13 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within its 15 W maximum power dissipation limit at that temperature. The SQJ476EP-T1_BE3 maintains stable RDS(on) performance up to 175 °C junction temperature, enabling robust design margins in thermally demanding automotive locations.
Is SQJ476EP-T1_BE3 compatible with lead-free reflow soldering processes?
Yes, SQJ476EP-T1_BE3 is qualified for lead-free reflow with a peak temperature of 260 °C, per Vishay's soldering recommendations. The PowerPAK SO-8L package uses matte tin plating and is designed for standard JEDEC J-STD-020 profiles. Manual soldering with an iron is not recommended due to the leadless construction and exposed copper drain pad; SQJ476EP-T1_BE3 requires controlled thermal profiling to ensure reliable bottom-side interconnection without voiding or delamination.
Does SQJ476EP-T1_BE3 have avalanche capability, and how is it rated?
Yes, SQJ476EP-T1_BE3 is rated for single-pulse avalanche energy (EAS) of 16 mJ and single-pulse avalanche current (IAS) of 18 A with L = 0.1 mH. These values are production-tested per Vishay's 100 % UIS screening, confirming ruggedness against inductive switching faults common in motor drives and solenoid controls. The SQJ476EP-T1_BE3 does not specify repetitive avalanche ratings, so system design must limit fault exposure to single-event conditions.
What is the gate threshold voltage range for SQJ476EP-T1_BE3, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for SQJ476EP-T1_BE3 is specified from 1.5 V to 2.5 V at ID = 250 μA. This low, tightly controlled threshold enables reliable turn-on with 3.3 V microcontroller outputs and supports gate drive simplicity in space-constrained automotive modules. However, full enhancement requires VGS ≥ 10 V to achieve the rated 0.038 Ω RDS(on); the SQJ476EP-T1_BE3 delivers usable conduction (0.050 Ω) even at 4.5 V, accommodating brown-out conditions.
How does the PowerPAK SO-8L package of SQJ476EP-T1_BE3 improve thermal performance versus standard SO-8?
The PowerPAK SO-8L package of SQJ476EP-T1_BE3 reduces junction-to-case thermal resistance to 3.3 °C/W - nearly 50 % lower than standard SO-8 packages - by exposing the drain directly via a large bottom-side copper pad. This allows direct thermal conduction to the PCB ground plane or external heatsink, significantly lowering steady-state junction temperature. Unlike leaded SO-8, the SQJ476EP-T1_BE3 eliminates bond wire inductance, improving switching waveform integrity and reducing EMI in high-di/dt automotive power stages.
SQJ476EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 38mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ476EP-T1_BE3 FAQ
1.How can I place an order for SQJ476EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ476EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ476EP-T1_BE3 reliable?
The price and inventory of SQJ476EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ476EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ476EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ476EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ476EP-T1_BE3?
SQJ476EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ476EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ476EP-T1_BE3?
For technical support, including SQJ476EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ476EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ476EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ476EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ476EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ476EP-T1_BE3?
All SQJ476EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ476EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ476EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ476EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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