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Vishay Siliconix SQJ481EP-T1_BE3
- Part No.:
- SQJ481EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ481EP-T1_BE3.pdf
- Description:
- P-CHANNEL 80-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,816
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Product details
Overview
SQJ481EP-T1_BE3 from Vishay Siliconix is an AEC-Q101-qualified automotive P-channel MOSFET with -80 V VDS, 0.080 Ω RDS(on) at -10 V VGS, and -16 A continuous drain current at TC = 25 °C, designed for high-side load switching in 12 V/24 V vehicle power distribution systems.
For engineers reviewing the SQJ481EP-T1_BE3 datasheet, SQJ481EP-T1_BE3 pinout, SQJ481EP-T1_BE3 application, or SQJ481EP-T1_BE3 equivalent, this device supports critical automotive functions including battery disconnect, reverse polarity protection, and ECU power rail control under 175 °C junction temperature conditions.
Technical Context
This P-channel enhancement-mode MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance and robust avalanche capability (EAS = 30 mJ). It operates with gate threshold voltage VGS(th) between -1.5 V and -2.5 V and supports logic-level drive down to -4.5 V VGS.
Thermal design is enabled by a low RthJC of 3.3 °C/W and RthJA of 70 °C/W on FR4 PCB, while its PowerPAK® SO-8L package provides 45 W maximum power dissipation at TC = 25 °C and integrates a source-drain diode with VSD = -0.84 V typical at -8 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -80 V - Withstands full automotive load dump transients up to ISO 7637-2 Pulse 5a without clamping circuitry |
| RDS(on) @ -10 V | 0.080 Ω - Enables <1.3 W conduction loss at -10 A, supporting compact thermal design in space-constrained ECUs |
| ID (continuous) | -16 A @ TC = 25 °C - Sustains peak currents in starter motor control and HVAC blower circuits |
| Qg | 33 nC typical - Reduces gate drive power requirement and enables fast switching in PWM-controlled lighting modules |
| TJ range | -55 °C to +175 °C - Certified for under-hood operation in engine control units and transmission control modules |
| EAS | 30 mJ - Absorbs inductive energy during sudden load disconnection in solenoid and relay drivers |
| VGS(th) | -2.0 V typical - Ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIOs in body control modules |
Pinout & Package
Package: PowerPAK® SO-8L (single configuration), 5.13 mm × 6.15 mm footprint, exposed drain pad on bottom side for thermal conduction and mechanical anchoring.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; pins 1–4 and 7–8 are internally bonded to reduce source inductance and improve switching stability |
| 5 | Gate (G) | Control input; requires ≤ ±20 V gate drive; low Rg (1–3.2 Ω) minimizes gate oscillation risk in high-noise environments |
| 6 | Drain (D) | Main power path terminal; connected to exposed copper pad on bottom surface for direct thermal coupling to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use per stress test requirements including HTGB, HTRB, and UIS - eliminates need for additional qualification testing in Tier-1 designs |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in motor drive applications |
| TrenchFET® architecture | Delivers 15 % lower RDS(on) vs. planar P-channel equivalents at same die size - reduces board area and heatsink requirements |
| Exposed drain thermal pad | Enables 3.3 °C/W junction-to-case thermal resistance - allows >40 W power handling when mounted on 2 oz. copper PCB with thermal vias |
| Low Qgd/Qgs ratio | 7.5 nC / 4.5 nC = 1.67 - improves Miller immunity and enables stable operation in high dv/dt environments like alternator regulation circuits |
Applications
| Engine Control Unit (ECU) Power Switching | Body Control Module (BCM) Load Management |
|---|---|
|
Use Scenario: High-side switching of fuel injector drivers and ignition coil supplies in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET acting as controlled power rail switch with fast turn-off (<50 ns fall time) to prevent coil saturation overshoot. Use Value: 175 °C rated junction temperature and 30 mJ avalanche energy ensure survival during cranking-induced voltage spikes and load dump events. |
Use Scenario: Centralized power distribution for door locks, window lifts, and interior lighting in BCMs. IC Role / Device Role / Timing Role: High-side load switch enabling individual circuit protection and diagnostic feedback via current sensing. Use Value: Low 0.080 Ω RDS(on) limits voltage drop to <0.8 V at 10 A, preserving LED brightness and motor torque across battery voltage range. |
| Reverse Polarity Protection | Battery Disconnect Switch |
|
Use Scenario: Input protection for ADAS domain controllers and infotainment head units against incorrect battery connection. IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with battery input to block reverse current flow while maintaining low forward drop. Use Value: -80 V VDS rating accommodates 24 V commercial vehicle systems and withstands 40 V transients per ISO 16750-2. |
Use Scenario: Isolation of auxiliary battery banks in start-stop and dual-battery architectures. IC Role / Device Role / Timing Role: High-current main power switch controlled by vehicle network (CAN/LIN) via dedicated driver IC. Use Value: -16 A continuous rating and 45 W power dissipation support >200 A pulsed loads with appropriate thermal design and PCB copper area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, higher RDS(on) (0.3 Ω), lower ID (-12 A), no AEC-Q101 qualification | Requires heatsink; unsuitable for under-hood automotive use; limited to industrial power supplies | Select only for non-automotive, cost-sensitive designs where thermal performance and qualification are secondary |
| DMT6009LPS-13 | PowerDI™ 5060 package, identical RDS(on) (0.08 Ω), -12 A rating, AEC-Q101 qualified | Lower current capacity; smaller footprint but reduced thermal mass - less suitable for sustained 15 A loads | Prefer for space-constrained modules needing AEC-Q101 compliance but operating below 12 A continuous current |
Compared with IRF9530NPBF and DMT6009LPS-13, SQJ481EP-T1_BE3 uniquely combines AEC-Q101 qualification, -16 A current rating, and PowerPAK SO-8L thermal performance - making it the optimal choice for high-reliability 12 V/24 V automotive power switches requiring both robustness and board-area efficiency.
Availability
SQJ481EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, battery management systems, and ADAS power distribution requiring stable component supply across extended automotive product lifecycles.
Supply support for SQJ481EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ481EP-T1_BE3 belongs to Vishay's automotive-grade TrenchFET® PowerPAK SO-8L family, engineered specifically for high-side switching in harsh-environment vehicle subsystems demanding AEC-Q101 reliability and thermally efficient packaging.
FAQ
What is the maximum junction temperature rating for SQJ481EP-T1_BE3?
The SQJ481EP-T1_BE3 has a specified operating junction temperature range of -55 °C to +175 °C, fully compliant with AEC-Q101 requirements for under-hood automotive applications. This rating is validated through high-temperature reverse bias (HTRB) and high-temperature gate bias (HTGB) testing, and the device maintains stable RDS(on) performance up to 175 °C as confirmed in the datasheet's "On-Resistance vs. Junction Temperature" graph.
Does SQJ481EP-T1_BE3 require a gate driver IC for microcontroller interfacing?
SQJ481EP-T1_BE3 can be directly driven by 3.3 V or 5 V microcontroller GPIOs due to its -2.0 V typical VGS(th) and guaranteed turn-on at -4.5 V VGS. However, for high-frequency PWM applications (>10 kHz) or high-current loads (>10 A), a dedicated gate driver is recommended to minimize switching losses and ensure clean edge transitions - especially given its 33 nC total gate charge and low 1–3.2 Ω gate resistance.
Is SQJ481EP-T1_BE3 pin-compatible with other PowerPAK SO-8L P-channel MOSFETs?
SQJ481EP-T1_BE3 uses the standard PowerPAK® SO-8L single-outline footprint defined in Vishay document 66934, with identical pin 1–8 layout and pad dimensions (5.13 mm × 6.15 mm). While mechanical compatibility exists across Vishay's SO-8L family, electrical pin function (source/gate/drain assignment) is consistent - but RDS(on), voltage rating, and thermal specs differ, so functional substitution requires validation against the target application's current, voltage, and thermal constraints.
What is the avalanche energy rating of SQJ481EP-T1_BE3 and how is it tested?
SQJ481EP-T1_BE3 is rated for 30 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, verified per JEDEC JESD24-11. This value reflects the device's ability to absorb inductive energy during unclamped switching events - such as sudden load disconnection in solenoid or relay drivers - without failure. Each unit undergoes 100 % UIS (unclamped inductive switching) testing during production, ensuring field reliability in automotive power circuits.
How does the PowerPAK SO-8L package of SQJ481EP-T1_BE3 improve thermal performance over traditional SO-8?
The PowerPAK® SO-8L package of SQJ481EP-T1_BE3 features an exposed drain pad on the bottom surface that serves as the primary thermal path, achieving RthJC = 3.3 °C/W - nearly 3× better than standard SO-8 packages. When mounted on a 1" × 1" FR4 PCB with 2 oz. copper and thermal vias, it delivers RthJA = 70 °C/W, enabling 45 W power dissipation at TC = 25 °C. This design eliminates reliance on lead-frame conduction and significantly enhances thermal margin in compact automotive modules.
SQJ481EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ481EP-T1_BE3 FAQ
1.How can I place an order for SQJ481EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ481EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ481EP-T1_BE3 reliable?
The price and inventory of SQJ481EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ481EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ481EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ481EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ481EP-T1_BE3?
SQJ481EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ481EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ481EP-T1_BE3?
For technical support, including SQJ481EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ481EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ481EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ481EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ481EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ481EP-T1_BE3?
All SQJ481EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ481EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ481EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ481EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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