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Vishay Siliconix SQJ486EP-T1_BE3
- Part No.:
- SQJ486EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ486EP-T1_BE3.pdf
- Description:
- N-CHANNEL 75-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,997
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Product details
Overview
SQJ486EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 75 V drain-source rating, 30 A continuous drain current at 25 °C, and RDS(on) of 0.026 Ω at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ486EP-T1_BE3 datasheet, SQJ486EP-T1_BE3 pinout, SQJ486EP-T1_BE3 application, or SQJ486EP-T1_BE3 equivalent, key selection criteria include its 175 °C rated junction temperature, 100 % Rg and UIS tested reliability, PowerPAK® SO-8L leadless package thermal performance, and verified 75 V breakdown voltage under automotive stress conditions.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low RDS(on) and fast switching in high-temperature automotive environments. Its gate threshold voltage (1.1–2.1 V) enables robust 4.5 V logic-level drive compatibility while maintaining noise immunity, and its 22 nC typical total gate charge supports efficient PWM operation in 100–500 kHz DC-DC stages.
The device integrates a body diode with 0.76–1.2 V forward voltage at 3.9 A and supports synchronous rectification. Thermal design leverages a 2.7 °C/W junction-to-case resistance and is validated for mounting on 1" square FR-4 PCBs per JEDEC JESD51-3 standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Withstands transient overvoltage spikes common in 48 V automotive systems without avalanche failure |
| RDS(on) @ 10 V | 0.026 Ω - Enables ≤ 23.4 W conduction loss at 30 A, critical for thermally constrained engine bay modules |
| RDS(on) @ 4.5 V | 0.032 Ω - Ensures full enhancement using standard 5 V microcontroller GPIOs without level-shifting circuitry |
| ID (continuous) | 30 A @ TC = 25 °C - Supports high-current loads such as HVAC blowers and EPS assist motors |
| Junction temp. range | −55 to +175 °C - Certified for direct placement near powertrain components without derating penalties |
| Qg (total) | 22 nC typical - Reduces gate driver power consumption and switching losses in high-frequency inverters |
| EAS | 9 mJ - Absorbs inductive energy during forced commutation in solenoid and relay drivers |
| AEC-Q101 qualified | Yes - Validated for automotive electronics per stress test requirements including HTGB, HTRB, and UHAST |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), 5.13 mm × 6.15 mm footprint, 1.07 mm height. Exposed copper drain pad on bottom enables low-inductance, high-current routing and enhanced thermal transfer to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Common source connection; pins 1/2/3/7/8 are internally bonded to minimize source inductance in high-di/dt switching |
| 4 | Gate (G) | Single gate input; low 0.9 Ω typical gate resistance reduces ringing and EMI in hard-switched topologies |
| 5, 6 | Drain (D) | High-current drain terminals; connected to exposed bottom copper pad for optimal thermal and electrical path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 26 mΩ RDS(on) in PowerPAK SO-8L - 35 % lower on-resistance than planar MOSFETs of same die size |
| AEC-Q101 qualification | Validated for automotive use with zero defects across HTGB (1000 h @ 150 °C), HTRB, and temperature cycling tests |
| 100 % Rg and UIS testing | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in motor drives |
| 175 °C maximum junction temperature | Enables operation in engine compartment without external heatsinks in 15 W dissipation scenarios |
| Low Crss (63–79 pF) | Minimizes Miller-induced shoot-through risk in half-bridge configurations operating above 200 kHz |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems with peak currents up to 25 A. IC Role / Device Role / Timing Role: High-side switch controlling injector coil energization; requires <10 ns turn-off delay and avalanche ruggedness for flyback energy handling. Use Value: 9 mJ EAS safely clamps inductive kickback; 175 °C rating allows placement directly on ECU board near combustion chamber sensors. | Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converter for start-stop and regenerative braking systems. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology; must sustain 30 A continuous current with <30 mΩ conduction loss at 150 °C. Use Value: 0.032 Ω RDS(on) @ 4.5 V ensures full enhancement from 5 V controller; PowerPAK SO-8L thermal resistance enables 56 W PD without external cooling. |
| Electric Power Steering (EPS) Motor Phase Switch | Automotive Battery Disconnect Switch |
Use Scenario: Half-bridge leg in three-phase inverter driving 300 W brushless EPS assist motor with PWM frequency ≥ 20 kHz. IC Role / Device Role / Timing Role: Low-side MOSFET in phase-leg configuration; demands low Qgd/Qg ratio to suppress cross-conduction and low Ciss for fast gate drive. Use Value: 5 nC Qgd and 1109 pF Ciss enable clean 17 ns rise time and 21 ns turn-off delay - critical for torque ripple reduction. | Use Scenario: High-reliability main battery disconnect switch in 48 V commercial vehicle systems requiring >100,000 cycle life and fault current interruption. IC Role / Device Role / Timing Role: Single-pole, normally-open isolation switch; must survive 120 A pulsed fault current and maintain <50 μA leakage at 75 V. Use Value: 120 A IDM and <1 μA IDSS at 75 V ensure fail-safe open-circuit behavior; AEC-Q101 qualification guarantees lifetime reliability under vibration and thermal shock. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 75 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N75F7 | Higher RDS(on) (0.033 Ω @ 10 V), larger PowerFLAT 5x6 package, 150 °C max TJ | Lower thermal performance in confined spaces; suitable only where PCB area permits larger footprint | Select STL220N75F7 only if existing layout accommodates 5x6 mm outline and system TJ stays below 150 °C |
| IRF100N75LPBF | TO-220 package, 0.0095 Ω RDS(on), no AEC-Q101 qualification, 175 °C TJ | Requires mechanical mounting and heatsink; not approved for automotive safety-critical functions | IRF100N75LPBF may be used in non-automotive industrial converters but fails AEC-Q101 compliance checks for OEM deployment |
Compared with STL220N75F7 and IRF100N75LPBF, the SQJ486EP-T1_BE3 uniquely combines AEC-Q101 qualification, PowerPAK SO-8L space efficiency, and 175 °C operation - making it the only option qualified for compact, high-temperature automotive power stages without derating or external cooling.
Availability
SQJ486EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V mild hybrid DC-DC conversion, and electric power steering systems requiring stable component supply across multi-year production cycles.
Supply support for SQJ486EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ486EP-T1_BE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-temperature, high-current switching in engine control, battery management, and ADAS subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ486EP-T1_BE3 at 125 °C case temperature?
The SQJ486EP-T1_BE3 supports 17 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package under sustained high-temperature operation and must be applied when ambient or board temperatures exceed 85 °C. The SQJ486EP-T1_BE3 maintains full functionality across this range without parameter shift beyond datasheet limits.
Is SQJ486EP-T1_BE3 compatible with standard 5 V logic-level gate drivers?
Yes, SQJ486EP-T1_BE3 is fully compatible with 5 V logic-level gate drivers due to its guaranteed RDS(on) of 0.032 Ω at VGS = 4.5 V and gate threshold voltage range of 1.1–2.1 V. The SQJ486EP-T1_BE3 achieves full enhancement well within standard microcontroller GPIO output ranges, eliminating need for gate driver ICs in many automotive body control modules.
Does SQJ486EP-T1_BE3 have integrated avalanche energy rating, and what is its value?
Yes, SQJ486EP-T1_BE3 is rated for single-pulse avalanche energy (EAS) of 9 mJ, measured with L = 0.1 mH. This rating is validated per JEDEC JESD24-1 and ensures reliable operation during inductive load switching transients in fuel injector and solenoid valve circuits. The SQJ486EP-T1_BE3 withstands repeated unclamped inductive switching events within this energy limit without degradation.
What is the thermal resistance from junction to case (RthJC) for SQJ486EP-T1_BE3, and how does it impact heatsinking?
The SQJ486EP-T1_BE3 has a junction-to-case thermal resistance (RthJC) of 2.7 °C/W, measured from die to the exposed drain pad on the bottom of the PowerPAK SO-8L package. This low value enables direct thermal coupling to inner-layer copper planes or external heatsinks via soldered thermal vias. For the SQJ486EP-T1_BE3, achieving <10 °C/W total system RthJA requires ≥4 thermal vias under the drain pad and 2 oz. copper on both sides of the PCB.
How is the AEC-Q101 qualification status of SQJ486EP-T1_BE3 verified, and what tests were performed?
The SQJ486EP-T1_BE3 is AEC-Q101 qualified per Rev. C test plan, with documented results for HTGB (1000 h @ 150 °C), HTRB (1000 h @ 150 °C, VDS = 75 V), temperature cycling (−55 °C to +175 °C, 1000 cycles), and UHAST (96 h @ 130 °C, 85 % RH, 90 V bias). These test reports are available upon request from Vishay's automotive technical support team. The SQJ486EP-T1_BE3 carries full AEC-Q101 certification for all listed stress categories.
SQJ486EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 26mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1386 pF @ 37 V
- FET Feature:
- -
- Power Dissipation (Max):
- 56W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ486EP-T1_BE3 FAQ
1.How can I place an order for SQJ486EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ486EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ486EP-T1_BE3 reliable?
The price and inventory of SQJ486EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ486EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ486EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ486EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ486EP-T1_BE3?
SQJ486EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ486EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ486EP-T1_BE3?
For technical support, including SQJ486EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ486EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ486EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ486EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ486EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ486EP-T1_BE3?
All SQJ486EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ486EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ486EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ486EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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