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Vishay Siliconix SQJ486EP-T1_GE3
- Part No.:
- SQJ486EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ486EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 75V 30A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,499
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Product details
Overview
SQJ486EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 75 V drain-source voltage, 30 A continuous drain current at 25 °C, and 0.026 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ486EP-T1_GE3 datasheet, SQJ486EP-T1_GE3 pinout, SQJ486EP-T1_GE3 application, or SQJ486EP-T1_GE3 equivalent, key selection criteria include its 175 °C rated junction temperature, 100 % Rg and UIS tested reliability, PowerPAK® SO-8L leadless package thermal performance (RthJC = 2.7 °C/W), and low gate charge (Qg = 22–34 nC) enabling efficient high-frequency switching in automotive power stages.
Technical Context
This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance with robust avalanche capability (EAS = 9 mJ) and fast switching (td(on) = 9–13 ns, tf = 14–21 ns). Its gate threshold voltage (VGS(th) = 1.1–2.1 V) ensures stable turn-on across automotive temperature ranges.
The device integrates a body diode with VSD = 0.76–1.2 V at IF = 3.9 A and supports synchronous rectification in buck converters. Its 100 % UIS testing and ±20 V gate-source rating provide design margin against transient overvoltage and gate drive misalignment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum blocking voltage for 48 V automotive systems with 2× safety margin |
| RDS(on) @ 10 V | 0.026 Ω - Enables <1 W conduction loss at 20 A, critical for thermally constrained modules |
| ID (continuous) | 30 A @ TC = 25 °C - Supports high-current motor gate drivers and starter solenoid interfaces |
| Qg | 22–34 nC - Low gate charge reduces driver power and enables >500 kHz PWM operation |
| TJ max | +175 °C - Qualified for under-hood placement without external heatsinking in compact ECUs |
| RthJC | 2.7 °C/W - Enables direct thermal coupling to PCB copper or metal-core substrates for high-power density |
| AEC-Q101 | Qualified - Meets automotive stress test requirements for vibration, temperature cycling, and HTRB |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), 5.13 mm × 6.15 mm footprint, 1.07 mm height. Exposed copper drain pad on bottom surface provides primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5 (G) | Gate | Single gate input with Rg = 0.45–1.5 Ω - Optimized for standard 3.3 V/5 V microcontroller drive without external gate resistor |
| 6, 7, 8 (D) | Drain | Three drain terminals connected to bottom thermal pad - Provides low-inductance, high-current path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers lowest RDS(on) × Qg figure-of-merit in 75 V SO-8L class, reducing total switching + conduction losses |
| AEC-Q101 qualification | Validated for automotive use with 100 % UIS and Rg testing - eliminates need for additional system-level robustness validation |
| PowerPAK® SO-8L package | Thermal resistance RthJC = 2.7 °C/W enables >50 W power dissipation with minimal PCB copper area |
| 175 °C operation | Supports placement near heat sources (e.g., inverters, DC-DC controllers) without derating or forced cooling |
| Low VGS(th) variation | VGS(th) = 1.1–2.1 V across temperature ensures reliable turn-on even with degraded gate drive in cold cranking |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side switch in EPS motor phase-leg driver controlling 3-phase BLDC motor torque. IC Role / Device Role / Timing Role: Main power switch handling bidirectional current up to 30 A with fast turn-off to prevent shoot-through. Use Value: 175 °C rating allows integration into compact motor control module; low RDS(on) minimizes heat generation during sustained assist mode. |
Use Scenario: Synchronous rectifier in secondary side of isolated 48 V → 12 V bi-directional DC-DC converter. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency above 200 kHz switching. Use Value: 0.032 Ω RDS(on) at 4.5 V gate drive enables >95 % efficiency at full load; fast fall time (<21 ns) reduces dead-time losses. |
| Automotive Battery Disconnect Unit (BDU) | Engine Control Unit (ECU) Load Switch |
Use Scenario: Main isolation switch between 12 V battery and high-power subsystems (e.g., HVAC compressor, ADAS radar). IC Role / Device Role / Timing Role: Single-pole, high-current disconnect switch with integrated avalanche energy handling for load dump protection. Use Value: 13 A single-pulse avalanche current and 9 mJ EAS withstand load dump transients without external TVS clamping. |
Use Scenario: Controlled power enable for fuel injector driver IC or oxygen sensor heater circuit. IC Role / Device Role / Timing Role: Low-voltage logic-controlled load switch with precise current limiting and thermal shutdown. Use Value: 30 A rating supports peak injector currents; 100 % UIS testing ensures survival during inductive kickback events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 75 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N75F7 | Higher RDS(on) (0.032 Ω @ 10 V), same 75 V rating, PowerFLAT 5x6 package with RthJC = 3.0 °C/W | Marginally higher conduction loss; requires larger PCB copper area for equivalent thermal performance | Preferred where ST ecosystem compatibility or lower gate charge (Qg = 18 nC) is prioritized over absolute RDS(on) |
| IRL8721PBF | Lower voltage rating (55 V), higher RDS(on) (0.035 Ω @ 10 V), TO-220AB package with RthJC = 1.5 °C/W but larger footprint | Not suitable for 48 V systems; requires heatsink for >15 A continuous operation | Only viable for legacy 12 V/24 V designs where through-hole mounting and higher thermal mass are acceptable |
Compared with STL220N75F7 and IRL8721PBF, the SQJ486EP-T1_GE3 delivers the lowest RDS(on) in a surface-mount automotive package, enabling higher power density and eliminating heatsink dependency in space-constrained modules - critical for next-generation ADAS and electrification platforms.
Availability
SQJ486EP-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid DC-DC conversion, and battery disconnect units requiring stable component supply across automotive production lifecycles.
Supply support for SQJ486EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ486EP-T1_GE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® PowerPAK® SO-8L family, engineered specifically for high-efficiency, high-temperature power switching in automotive electrification systems.
FAQ
What is the maximum junction temperature rating for SQJ486EP-T1_GE3?
The SQJ486EP-T1_GE3 is rated for a maximum junction temperature of +175 °C and is AEC-Q101 qualified for automotive under-hood operation. This rating is validated across all operating conditions including continuous conduction and pulsed avalanche events, making SQJ486EP-T1_GE3 suitable for placement near heat-generating components without external cooling.
Does SQJ486EP-T1_GE3 require a heatsink in typical automotive applications?
SQJ486EP-T1_GE3 does not require an external heatsink when mounted on a 1" square FR-4 PCB with 2 oz. copper on both sides, thanks to its low RthJC of 2.7 °C/W and RthJA of 70 °C/W. In most automotive applications-including EPS motor drivers and BDU switches-thermal management is achieved via PCB copper pour and chassis grounding, eliminating mechanical heatsink assembly steps.
Is SQJ486EP-T1_GE3 pin-compatible with other PowerPAK SO-8L MOSFETs?
SQJ486EP-T1_GE3 uses the standard PowerPAK® SO-8L single-outline footprint defined in Vishay document 66934, with identical pad dimensions and terminal layout (pins 1–4 = S, pin 5 = G, pins 6–8 = D). It is mechanically compatible with other single-die PowerPAK SO-8L devices, though electrical parameters (e.g., RDS(on), Qg) must be verified per application.
What gate drive voltage range is recommended for reliable operation of SQJ486EP-T1_GE3?
SQJ486EP-T1_GE3 is characterized for stable operation with gate drive voltages from 4.5 V to 10 V. Its VGS(th) range (1.1–2.1 V) ensures turn-on with 3.3 V logic, but full RDS(on) specification (0.032 Ω) is guaranteed only at ≥4.5 V. For minimum conduction loss and noise immunity, 10 V drive is recommended - within the device's ±20 V absolute maximum VGS rating.
How is avalanche ruggedness specified for SQJ486EP-T1_GE3?
SQJ486EP-T1_GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and specified for single-pulse avalanche energy (EAS) of 9 mJ and current (IAS) of 13 A (L = 0.1 mH). These ratings are measured per JEDEC standard JESD24-1 and ensure survivability during inductive load turn-off transients common in motor and solenoid driving circuits.
SQJ486EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 26mOhm @ 51A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1386 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 56W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ486EP-T1_GE3 FAQ
1.How can I place an order for SQJ486EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ486EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ486EP-T1_GE3 reliable?
The price and inventory of SQJ486EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ486EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ486EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ486EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ486EP-T1_GE3?
SQJ486EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ486EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ486EP-T1_GE3?
For technical support, including SQJ486EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ486EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ486EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ486EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ486EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ486EP-T1_GE3?
All SQJ486EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ486EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ486EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ486EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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