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Vishay Siliconix SQJ488EP-T1_BE3
- Part No.:
- SQJ488EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ488EP-T1_BE3.pdf
- Description:
- MOSFET N-CH 100V 42A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,700
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Product details
Overview
SQJ488EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 42 A continuous drain current at 25 °C, and 0.0210 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ488EP-T1_BE3 datasheet, SQJ488EP-T1_BE3 pinout, SQJ488EP-T1_BE3 application, or SQJ488EP-T1_BE3 equivalent, key selection criteria include its 1.8 °C/W junction-to-case thermal resistance, 100 % Rg and UIS tested reliability, PowerPAK® SO-8L leadless package footprint, and verified performance at 175 °C ambient-referenced operation in automotive power modules.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature automotive power stages. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with 3.3 V and 5 V controllers, while its 18 nC total gate charge supports efficient PWM operation at frequencies up to 200 kHz in synchronous buck converters.
The device integrates a body diode with 0.78–1.2 V forward voltage at 4.7 A and supports unclamped inductive switching (UIS) with 1.68 mJ single-pulse avalanche energy. Thermal design is enabled by its 1.8 °C/W RthJC, allowing direct heatsinking via the exposed drain pad on the bottom side of the PowerPAK SO-8L package.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin |
| RDS(on) @ VGS = 10 V | 0.0210 Ω - Enables ≤9 W conduction loss at 42 A, critical for high-efficiency traction inverters and starter generators |
| ID Continuous @ TC = 25 °C | 42 A - Sustained current capability with PCB-mounted thermal management per FR-4 1" square layout |
| Junction Temp Range | −55 to +175 °C - Validated operation across full automotive ambient range including engine bay environments |
| RthJC | 1.8 °C/W - Enables direct thermal path from die to heatsink through exposed drain pad in PowerPAK SO-8L |
| Qg Total Gate Charge | 18 nC (typ) - Supports <50 ns turn-on delay and 11 ns rise time with 6 Ω gate resistor, minimizing switching loss |
| AEC-Q101 Qualified | Yes - Certified for automotive use with 100 % Rg and UIS testing per qualification standard |
Pinout & Package
Package: PowerPAK® SO-8L - leadless surface-mount package with exposed copper drain pad on bottom side; 5.13 mm × 6.15 mm footprint; 1.07 mm nominal height; RoHS-compliant, halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5 (G) | Gate | Single gate input with 2.2 Ω typical gate resistance; optimized for low-noise gate drive routing |
| 6, 7, 8 (D) | Drain | Three drain terminals connected to large exposed copper pad - primary thermal and current path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 21 mΩ RDS(on) at 100 V rating - industry-leading figure-of-merit for automotive 100 V MOSFETs |
| AEC-Q101 qualification | Validated for automotive powertrain and chassis systems requiring zero-defect reliability and extended temperature operation |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - no field failures from avalanche overstress |
| PowerPAK SO-8L package | Thermal resistance reduced by 40 % vs. standard SO-8; enables >2× power density in space-constrained engine control units |
| 175 °C maximum junction temperature | Supports operation in proximity to hot components (e.g., exhaust manifolds, inverters) without derating or forced cooling |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side switch in three-phase EPS motor driver controlling assist torque during steering maneuvers. IC Role / Device Role / Timing Role: N-channel high-side power switch with fast turn-off (<7 ns fall time) to prevent shoot-through in half-bridge configuration. Use Value: 0.0210 Ω RDS(on) minimizes I²R loss during sustained 30 A assist current, extending EPS module lifetime at 150 °C under-hood ambient. |
Use Scenario: Primary-side synchronous rectifier in bi-directional 48 V/12 V DC-DC converter for regenerative braking energy transfer. IC Role / Device Role / Timing Role: Low-RDS(on) N-channel switch operating at 100 kHz PWM with 18 nC Qg enabling ZVS-compatible gate drive. Use Value: 1.8 °C/W RthJC allows direct thermal coupling to converter heatsink, maintaining <125 °C junction temp at 40 A continuous conduction mode. |
| Automotive Battery Disconnect Unit (BDU) | On-Board Charger (OBC) Input Stage |
Use Scenario: Main isolation switch between 400 V traction battery and vehicle low-voltage distribution network during crash events. IC Role / Device Role / Timing Role: Fail-safe high-voltage disconnect switch with 1.68 mJ UIS rating to absorb fault energy during sudden disconnection. Use Value: AEC-Q101 qualification ensures mechanical and thermal survivability during crash-induced vibration and thermal shock up to 175 °C. |
Use Scenario: AC-DC PFC boost switch in 11 kW on-board charger handling 32 A RMS input current at 25 kHz switching frequency. IC Role / Device Role / Timing Role: High-current, high-temperature boost switch with 42 A ID rating and 100 V VDS margin over 400 V DC bus transients. Use Value: 0.0258 Ω RDS(on) at 4.5 V gate drive enables direct logic-level control from MCU GPIO, eliminating level-shifter circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A, 1.8 mΩ RDS(on) in PowerFLAT 5x6 - higher current, lower RDS(on), but larger footprint and no AEC-Q101 certification | Targeted at industrial UPS and solar inverters; not validated for automotive temperature cycling or humidity testing | Select when board space permits larger package and AEC-Q101 is not required; avoid for engine bay deployment |
| IRF1010NSPBF | 100 V, 67 A, 0.015 Ω RDS(on) in TO-220AB - higher current, lower RDS(on), but through-hole, non-automotive qualified, 62 °C/W RthJA | Used in legacy industrial motor drives; lacks UIS screening, thermal performance, and surface-mount compatibility | Choose only for prototyping or non-automotive cost-sensitive designs; unsuitable for production automotive PCBs |
Compared with STL220N10F7 and IRF1010NSPBF, the SQJ488EP-T1_BE3 uniquely balances AEC-Q101 compliance, 175 °C operation, PowerPAK SO-8L surface-mount integration, and 0.0210 Ω RDS(on) - making it the only option qualified for volume production in space- and temperature-constrained automotive power modules.
Availability
SQJ488EP-T1_BE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid DC-DC converters, and automotive battery disconnect units requiring stable component supply across extended product lifecycles.
Supply support for SQJ488EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ488EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine control, electrified powertrain, and safety-critical vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ488EP-T1_BE3 at 125 °C case temperature?
The SQJ488EP-T1_BE3 supports 24 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures reliable operation in high-ambient automotive environments where case temperatures exceed 100 °C. The SQJ488EP-T1_BE3 maintains safe SOA boundaries up to this current level with appropriate PCB copper area.
Does SQJ488EP-T1_BE3 have integrated ESD protection on the gate terminal?
The SQJ488EP-T1_BE3 does not include on-die ESD protection structures beyond inherent process-level robustness. Gate-source leakage is specified at ±100 nA at ±20 V, and the device requires external gate protection (e.g., Zener clamp or RC snubber) in systems exposed to human-body-model (HBM) or charged-device-model (CDM) ESD events. This is consistent with standard power MOSFET design practice for high-voltage automotive devices like the SQJ488EP-T1_BE3.
Can SQJ488EP-T1_BE3 be used in synchronous rectification applications at 48 V output?
Yes, the SQJ488EP-T1_BE3 is suitable for synchronous rectification in 48 V output DC-DC converters due to its 0.0258 Ω RDS(on) at VGS = 4.5 V, enabling efficient low-voltage drive from standard controller outputs. Its 175 °C junction rating and AEC-Q101 qualification make it appropriate for high-density, thermally demanding 48 V server PSUs and automotive DC-DC modules where the SQJ488EP-T1_BE3 replaces Schottky diodes.
What is the recommended solder profile for SQJ488EP-T1_BE3's PowerPAK SO-8L package?
The SQJ488EP-T1_BE3 requires peak reflow temperature of 260 °C per JEDEC J-STD-020, with ramp rates and dwell times aligned to Vishay document 73257. Manual soldering with an iron is not recommended due to the leadless construction and exposed copper drain pad. Reflow must ensure complete wetting of all eight terminals and the bottom-side drain pad, with solder paste volume calibrated to avoid voiding under the thermal pad - critical for achieving the specified 1.8 °C/W RthJC in final assembly using the SQJ488EP-T1_BE3.
Is SQJ488EP-T1_BE3 pin-compatible with other PowerPAK SO-8L MOSFETs such as SQJ852EP?
No, SQJ488EP-T1_BE3 is not pin-compatible with SQJ852EP. While both use the PowerPAK SO-8L outline, SQJ852EP is a dual-N-channel device with different pin assignment (e.g., separate gates and sources), whereas SQJ488EP-T1_BE3 is a single-N-channel with four paralleled source pins (1–4), one gate (5), and three drain pins (6–8). Layout reuse is not possible without schematic and footprint revision - the SQJ488EP-T1_BE3 requires its specific pinout mapping per the bottom-view diagram in datasheet page 2.
SQJ488EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 978 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ488EP-T1_BE3 FAQ
1.How can I place an order for SQJ488EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ488EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ488EP-T1_BE3 reliable?
The price and inventory of SQJ488EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ488EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ488EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ488EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ488EP-T1_BE3?
SQJ488EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ488EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ488EP-T1_BE3?
For technical support, including SQJ488EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ488EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ488EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ488EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ488EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ488EP-T1_BE3?
All SQJ488EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ488EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ488EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ488EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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