My Inquiry
My Account
Vishay Siliconix SQJ488EP-T1_GE3
- Part No.:
- SQJ488EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ488EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 100V 42A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,878
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQJ488EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 100 V MOSFET in PowerPAK® SO-8L package, rated for 42 A continuous drain current at 25 °C, with RDS(on) = 21.0 mΩ at VGS = 10 V and 25.8 mΩ at VGS = 4.5 V, operating up to +175 °C junction temperature - used in high-efficiency DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the SQJ488EP-T1_GE3 datasheet, SQJ488EP-T1_GE3 pinout, SQJ488EP-T1_GE3 application, or SQJ488EP-T1_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 1.8 °C/W), avalanche energy rating (EAS = 1.68 mJ), AEC-Q101 qualification status, gate charge (Qg = 18–27 nC), and SO-8L footprint compatibility for automotive power stage design.
Technical Context
This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching with controlled Qgd/Qgs ratio (4.7 nC / 2 nC), supporting high-frequency synchronous rectification. Its 100 % Rg and UIS testing ensures robustness in inductive load switching.
The device features a thermally enhanced PowerPAK® SO-8L leadless package with exposed copper drain pad, delivering RthJC = 1.8 °C/W and RthJA = 65 °C/W (on 1"² FR-4 PCB), enabling compact, high-power-density automotive modules without heatsinks under moderate loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V automotive systems with 2× safety margin against transients |
| RDS(on) @ 10 V | 21.0 mΩ - enables ≤0.37 W conduction loss at 42 A, critical for thermal budget in ECU power stages |
| RDS(on) @ 4.5 V | 25.8 mΩ - ensures reliable turn-on with 5 V logic-level gate drivers in battery-sensed circuits |
| ID (continuous) | 42 A @ TC = 25 °C - sustains peak motor drive currents in 12 V/24 V starter-generator inverters |
| EAS | 1.68 mJ - withstands single-pulse inductive energy from solenoid or relay coil deactivation |
| TJ max | +175 °C - certified for under-hood placement in transmission control units and ADAS power supplies |
| Qg | 18–27 nC - balances switching speed and gate driver power loss in 100–500 kHz DC-DC designs |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), 5.13 mm × 6.15 mm footprint, 1.07 mm height, exposed copper drain terminal on bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Internally paralleled source terminals - low-inductance return path for high di/dt motor phases |
| 5, 6, 7, 8 (D) | Drain | Exposed copper drain pad - primary thermal path to PCB ground plane; no solder fillet required |
| 4 (G) | Gate | Single gate input - compatible with standard 5 V or 10 V gate drivers; Rg = 1.1–3.3 Ω measured |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements - supports PPAP documentation for Tier-1 suppliers |
| 100 % Rg tested | Guarantees gate resistance consistency (1.1–3.3 Ω) - essential for matched parallel operation in multi-phase inverters |
| 100 % UIS tested | Each unit passes unclamped inductive switching stress - eliminates field failure risk in solenoid driver applications |
| TrenchFET® architecture | Optimized cell layout reduces Ciss/Coss ratio (782 pF / 372 pF) - improves hard-switching efficiency in buck regulators |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 - suitable for global automotive manufacturing |
Applications
| Engine Control Unit (ECU) Power Stage | Electric Power Steering (EPS) H-Bridge |
|---|---|
Use Scenario: High-side/low-side switching of fuel injector drivers and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: N-channel MOSFET used as synchronized switch in 12 V/42 V power distribution networks with microsecond-scale PWM control. Use Value: 175 °C rating allows direct mounting near engine bay electronics; 21 mΩ RDS(on) minimizes voltage drop during cold-cranking (6.5 V min). | Use Scenario: Bidirectional motor control in column-assist EPS systems requiring torque ripple < 5 %. IC Role / Device Role / Timing Role: Half-bridge leg switch handling 30–40 A peak phase current at 20–100 kHz PWM frequency. Use Value: Low Qgd/Qgs ratio (2.35) suppresses shoot-through risk; SO-8L thermal performance enables 95 % duty cycle operation without derating. |
| On-Board Charger (OBC) DC-DC Stage | Transmission Control Module (TCM) Solenoid Driver |
Use Scenario: Primary-side synchronous rectifier in isolated 3.3 kW bidirectional OBC LLC resonant converter. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET operating at 200–300 kHz with zero-voltage switching assist. Use Value: Ciss = 782 pF and Qg = 22.5 nC typical enable < 15 ns rise time; 100 V rating accommodates 400 V bus transients. | Use Scenario: High-current linear or PWM-controlled solenoid actuation for automatic transmission shift valves. IC Role / Device Role / Timing Role: Low-side switch driving 12–24 V, 2–5 A solenoids with 10 ms–500 ms dwell times. Use Value: 1.68 mJ EAS rating safely clamps back-EMF without external snubbers; 175 °C capability prevents thermal shutdown during prolonged engagement. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PbF | Higher RDS(on) (75 mΩ @ 10 V), TO-220 package, lower ID (74 A pulsed only), no AEC-Q101 | Requires heatsink; unsuitable for under-hood SMT assembly; limited to non-automotive industrial use | Select only for cost-sensitive, non-automotive 100 V switching where thermal constraints allow larger footprint |
| STL220N10F7 | Lower RDS(on) (1.8 mΩ @ 10 V), same PowerFLAT 5x6 package, AEC-Q101 qualified, but 100 V rating not guaranteed beyond 90 V | Better conduction loss, but reduced voltage margin - risks failure during load dump (ISO 7637-2 Pulse 5a) | Prefer for high-efficiency 48 V systems where voltage transients are actively clamped; verify system-level surge protection |
Compared with IRF4905PbF and STL220N10F7, SQJ488EP-T1_GE3 uniquely balances 100 V rating, AEC-Q101 compliance, SO-8L SMT compatibility, and 21 mΩ RDS(on) - making it the only option qualified for direct replacement in space-constrained, high-reliability automotive power stages without layout or thermal redesign.
Availability
SQJ488EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and on-board chargers requiring stable component supply across automotive production lifecycles.
Supply support for SQJ488EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ488EP-T1_GE3 belongs to Vishay's TrenchFET® Automotive Power MOSFET product line, engineered specifically for high-temperature, high-reliability switching in engine bay and transmission control environments.
FAQ
What is the maximum continuous drain current rating for SQJ488EP-T1_GE3 at 125 °C case temperature?
The SQJ488EP-T1_GE3 supports 24 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8L package and ensures safe operation in high-ambient under-hood locations. The full 42 A rating applies only at TC = 25 °C.
Is SQJ488EP-T1_GE3 qualified to AEC-Q101, and what does that mean for automotive use?
Yes, SQJ488EP-T1_GE3 is AEC-Q101 qualified, meaning it has passed accelerated stress tests including HTGB, HTRB, UHAST, and temperature cycling - validating reliability for automotive electronic control modules. This qualification supports PPAP submission and enables use in safety-critical systems like engine management and EPS, subject to system-level functional safety analysis.
Does SQJ488EP-T1_GE3 have integrated ESD protection on the gate terminal?
No, SQJ488EP-T1_GE3 does not include integrated gate ESD protection. Its gate-source leakage (IGSS) is specified at ±100 nA at ±20 V, and gate oxide integrity relies on external handling controls. Designers must implement board-level ESD safeguards such as series gate resistors and TVS diodes when routing gate traces in high-noise automotive environments.
What is the recommended PCB pad layout for SQJ488EP-T1_GE3's PowerPAK® SO-8L package?
Vishay specifies a recommended minimum pad pattern for SQJ488EP-T1_GE3 in document 63818: 5.00 mm × 2.31 mm for the drain thermal pad, with 0.51 mm wide source/gate pads and 0.595 mm spacing between pins. Use 2 oz. copper on both sides of a 1" × 1" FR-4 board to achieve the published RthJA = 65 °C/W; avoid solder mask defined (SMD) pads for the drain to ensure optimal thermal transfer.
Can SQJ488EP-T1_GE3 be used in parallel configurations, and what precautions apply?
Yes, SQJ488EP-T1_GE3 supports parallel operation due to its positive temperature coefficient of RDS(on) and 100 % Rg testing. To ensure current sharing, use matched gate resistors (±5 %), symmetrical PCB layout with equal trace lengths, and separate Kelvin source connections. Derate total current by 15 % versus sum of individual ratings to account for thermal coupling in dense layouts.
SQJ488EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 7.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 979 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ488EP-T1_GE3 FAQ
1.How can I place an order for SQJ488EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ488EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ488EP-T1_GE3 reliable?
The price and inventory of SQJ488EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ488EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ488EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ488EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ488EP-T1_GE3?
SQJ488EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ488EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ488EP-T1_GE3?
For technical support, including SQJ488EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ488EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ488EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ488EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ488EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ488EP-T1_GE3?
All SQJ488EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ488EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ488EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ488EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQJ488EP-T1_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
