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Vishay Siliconix SQJ488EP-T2_BE3
- Part No.:
- SQJ488EP-T2_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ488EP-T2_BE3.pdf
- Description:
- MOSFET N-CH 100V 42A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,975
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Product details
Overview
SQJ488EP-T2_BE3 from Vishay Siliconix is an automotive-grade N-channel 100 V MOSFET in PowerPAK® SO-8L package, delivering RDS(on) = 21.0 mΩ at VGS = 10 V and 25.8 mΩ at VGS = 4.5 V, rated for continuous drain current up to 42 A at TC = 25 °C, and qualified to AEC-Q101 for under-hood powertrain and body control modules.
For engineers reviewing the SQJ488EP-T2_BE3 datasheet, SQJ488EP-T2_BE3 pinout, SQJ488EP-T2_BE3 application, or SQJ488EP-T2_BE3 equivalent, key selection criteria include its 175 °C junction temperature rating, 100 % Rg and UIS tested reliability, low gate charge (Qg = 18–27 nC), and thermal resistance RthJC = 1.8 °C/W for high-efficiency DC-DC and motor drive designs.
Technical Context
This MOSFET employs TrenchFET® technology to achieve low on-resistance with fast switching performance, supporting high-frequency synchronous rectification and PWM-controlled loads. Its gate threshold voltage (VGS(th) = 1.5–2.5 V) enables robust 3.3 V and 5 V logic-level drive compatibility while maintaining tight parametric control across temperature.
The device features a single N-channel configuration with integrated source-drain diode (VSD = 0.78–1.2 V at IF = 4.7 A), optimized for bidirectional current handling in H-bridge motor drivers and reverse-polarity protection circuits where avalanche energy rating (EAS = 1.68 mJ) and pulsed current capability (IDM = 170 A) are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V automotive systems with 2× safety margin against load dump transients |
| RDS(on) @ 10 V | 0.0210 Ω - enables <1 W conduction loss at 7.1 A, reducing heatsink requirements |
| RDS(on) @ 4.5 V | 0.0258 Ω - ensures full enhancement with standard 5 V microcontroller GPIOs |
| ID (continuous) | 42 A @ TC = 25 °C - suitable for high-current solenoid and pump drivers |
| Qg | 18–27 nC - minimizes gate drive power and enables >500 kHz switching in SMPS |
| RthJC | 1.8 °C/W - allows direct thermal coupling to PCB copper or heatsink for compact thermal design |
| TJ max | +175 °C - certified for engine bay placement without derating in harsh ambient conditions |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, surface-mount), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed drain paddle on bottom side for optimal thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications |
| 5, 7, 8 (D) | Drain | Three drain terminals connected to large internal copper paddle - primary thermal path and high-current return |
| 6 (G) | Gate | Single gate input with Rg = 1.1–3.3 Ω - enables stable gate drive without external series resistor in most layouts |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power electronics per stress test requirements including HTOL, TC, UHAST, and mechanical shock |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in motor commutation |
| TrenchFET® architecture | Enables lower RDS(on) × Qg figure-of-merit than planar MOSFETs - improves efficiency in 100 kHz–1 MHz converters |
| 175 °C operation | Rated for continuous use at maximum junction temperature - supports simplified thermal design in space-constrained ECUs |
| PowerPAK SO-8L package | Leadless construction reduces parasitic inductance by >30 % vs. SO-8, improving EMI and dv/dt immunity in noisy environments |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V/48 V fuel injectors with precise pulse-width modulation. IC Role / Device Role / Timing Role: Main power switch in low-side driver stage, handling repetitive 10–20 A peak currents at 1–10 Hz. Use Value: Low RDS(on) and fast turn-off (tf = 4.6–7 ns) minimize switching losses and injector response delay, enabling accurate fuel metering. | Use Scenario: Bidirectional H-bridge control of brushed DC blower motors in climate control systems. IC Role / Device Role / Timing Role: Half-bridge leg switch with integrated body diode used for freewheeling and regenerative braking. Use Value: VSD = 0.78–1.2 V and ISM = 128 A pulsed rating support reliable reverse-current conduction during PWM dead-time. |
| 48 V Mild Hybrid DC-DC Converter | Automotive LED Headlamp Matrix Driver |
Use Scenario: Synchronous rectifier in 48 V–12 V buck converter supplying auxiliary vehicle systems. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 200–500 kHz with zero-voltage switching assist. Use Value: Coss = 372–462 pF and Qgd = 4.7 nC enable low switching loss and reduced gate drive complexity in high-frequency topologies. | Use Scenario: High-side current sink for segmented LED arrays requiring precise dimming and short-circuit protection. IC Role / Device Role / Timing Role: Load switch controlling individual LED strings in adaptive driving beam (ADB) systems. Use Value: AEC-Q101 qualification and 100 V VDS withstand capability ensure reliability during load dump events (ISO 7637-2 Pulse 5a). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PbF | Higher RDS(on) (20 mΩ @ 10 V but only at TJ = 25 °C), no AEC-Q101 qualification, TO-220 package | Limited to non-automotive industrial use; requires heatsink due to higher RthJA | Choose IRF4905PbF only for cost-sensitive non-automotive prototypes where qualification and thermal density are not required. |
| STL220N6F7 | 60 V rating, lower RDS(on) (1.6 mΩ), but not AEC-Q101 qualified and uses PowerFLAT 8x8 package | Not suitable for 48 V+ systems; lacks automotive reliability validation and high-temp operation | Select STL220N6F7 only for 24 V battery-powered tools or consumer devices where voltage headroom and qualification are secondary. |
Compared with IRF4905PbF and STL220N6F7, the SQJ488EP-T2_BE3 uniquely combines 100 V rating, AEC-Q101 qualification, 175 °C operation, and PowerPAK SO-8L's low-inductance layout - making it the only drop-in option for production automotive 48 V power stages requiring zero layout rework and full compliance.
Availability
SQJ488EP-T2_BE3 is available at Aetrix Electronics and suitable for engine control units, HVAC motor drives, and 48 V DC-DC converters requiring stable component supply across multi-year automotive production cycles.
Supply support for SQJ488EP-T2_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ488EP-T2_BE3 belongs to Vishay's TrenchFET® Automotive Power MOSFET family, engineered specifically for high-efficiency, high-temperature power switching in next-generation 48 V mild hybrid and zonal E/E architectures.
FAQ
What is the maximum junction temperature rating for SQJ488EP-T2_BE3?
The SQJ488EP-T2_BE3 is rated for continuous operation up to +175 °C junction temperature, verified per AEC-Q101 stress testing. This rating is explicitly confirmed in the Absolute Maximum Ratings table and supported by normalized RDS(on) vs. TJ curves showing stable performance across -55 °C to +175 °C. The SQJ488EP-T2_BE3 maintains functional integrity in under-hood environments where ambient temperatures exceed 125 °C.
Is SQJ488EP-T2_BE3 qualified for automotive applications?
Yes, SQJ488EP-T2_BE3 is AEC-Q101 qualified, as stated in the Features section and validated through full stress test suites including high-temperature operating life (HTOL), temperature cycling (TC), and unclamped inductive switching (UIS). The datasheet notes "Parametric verification ongoing" for certain tests, but qualification status is confirmed in Vishay's official product summary and ordering documentation. SQJ488EP-T2_BE3 meets automotive reliability requirements for powertrain and body electronics.
What is the gate threshold voltage range for SQJ488EP-T2_BE3?
The gate threshold voltage (VGS(th)) for SQJ488EP-T2_BE3 is specified as 1.5 V minimum, 2.0 V typical, and 2.5 V maximum at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V and 5 V logic-level drivers while providing noise immunity against spurious gate triggering. The SQJ488EP-T2_BE3 exhibits minimal VGS(th) drift over temperature, as shown in the Threshold Voltage vs. Junction Temperature graph.
Does SQJ488EP-T2_BE3 have an integrated body diode?
Yes, SQJ488EP-T2_BE3 includes an inherent N-channel MOSFET body diode with forward voltage VSD = 0.78–1.2 V at IF = 4.7 A and VGS = 0 V. This diode is fully characterized in the Source-Drain Diode Ratings section and supports freewheeling, reverse-current conduction, and bootstrap charging in half-bridge configurations. The SQJ488EP-T2_BE3 body diode is rated for pulsed current up to 128 A (ISM), enabling robust operation in motor drive and converter applications.
What is the thermal resistance from junction to case for SQJ488EP-T2_BE3?
The junction-to-case (drain) thermal resistance (RthJC) for SQJ488EP-T2_BE3 is 1.8 °C/W, measured under standard test conditions with the drain paddle soldered to a 1" × 1" FR-4 PCB. This value is listed in the Thermal Resistance Ratings table and reflects the dominant thermal path through the exposed drain terminal. The SQJ488EP-T2_BE3 achieves this low RthJC via its PowerPAK SO-8L package's large copper paddle, enabling efficient heat transfer to heatsinks or thermal vias.
SQJ488EP-T2_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 978 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ488EP-T2_BE3 FAQ
1.How can I place an order for SQJ488EP-T2_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ488EP-T2_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ488EP-T2_BE3 reliable?
The price and inventory of SQJ488EP-T2_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ488EP-T2_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ488EP-T2_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ488EP-T2_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ488EP-T2_BE3?
SQJ488EP-T2_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ488EP-T2_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ488EP-T2_BE3?
For technical support, including SQJ488EP-T2_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ488EP-T2_BE3 requirements.
6.How does Aetrix verify that SQJ488EP-T2_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ488EP-T2_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ488EP-T2_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ488EP-T2_BE3?
All SQJ488EP-T2_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ488EP-T2_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ488EP-T2_BE3 part is unused and in its original packaging.
Return procedure for SQJ488EP-T2_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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