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Vishay Siliconix SQJ488EP-T2_GE3
- Part No.:
- SQJ488EP-T2_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ488EP-T2_GE3.pdf
- Description:
- N-CHANNEL 100-V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:14,323
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Product details
Overview
SQJ488EP-T2_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 42 A continuous drain current at 25 °C, and 0.0210 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, targeting high-reliability motor control and DC-DC conversion in engine compartments.
For engineers reviewing the SQJ488EP-T2_GE3 datasheet, SQJ488EP-T2_GE3 pinout, SQJ488EP-T2_GE3 application, or SQJ488EP-T2_GE3 equivalent, key selection criteria include its 1.8 °C/W junction-to-case thermal resistance, 100 % Rg and UIS tested reliability, and PowerPAK® SO-8L leadless package optimized for high-power density automotive PCB layouts.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: total gate charge is 18–27 nC at VGS = 10 V, with turn-on delay of 4–6 ns and rise time of 11–16 ns under standard test conditions (VDD = 50 V, Rg = 6 Ω). Its gate threshold voltage is tightly specified at 1.5–2.5 V, enabling robust drive compatibility with 3.3 V and 5 V controllers.
The device integrates a body diode with 0.78–1.2 V forward voltage at IF = 4.7 A and supports pulsed avalanche energy of 1.68 mJ. Thermal design is enabled by validated junction-to-ambient resistance of 65 °C/W on 1"² FR-4 PCB and precise thermal transient impedance curves for transient power cycling analysis.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 12 V/48 V automotive battery rail protection and high-side switching |
| RDS(on) @ VGS = 10 V | 0.0210 Ω - Enables ≤9 W conduction loss at 42 A, critical for thermally constrained under-hood modules |
| ID (continuous) | 42 A @ TC = 25 °C - Sustains high-current motor phase or solenoid drive without derating in heatsinked designs |
| Junction temp. range | −55 to +175 °C - Validated operation across full automotive ambient range including engine bay hot zones |
| RthJC | 1.8 °C/W - Supports direct thermal interface to metal-core PCB or heatsink for efficient power dissipation |
| Qg | 18–27 nC - Determines gate driver power requirement and switching loss trade-off in 100 kHz–500 kHz converters |
| AEC-Q101 qualified | Yes - Meets stress testing requirements for automotive electronic systems per Rev. D qualification protocol |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed copper drain terminals on bottom side for enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 (Drain) | Power Drain (common source connection) | Five parallel drain terminals form low-inductance, high-current path tied to internal die drain metallization and bottom thermal pad |
| 4 (Gate) | Control Input | Single gate terminal with 1.1–3.3 Ω gate resistance; requires <10 V drive for full enhancement; no internal gate resistor |
| 5, 6 (Source) | Power Source / Reference | Two dedicated source terminals provide Kelvin sensing capability and reduce source inductance in high-di/dt switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers industry-leading RDS(on) × Qg figure-of-merit for reduced conduction + switching losses in 48 V systems |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching ruggedness-no latent field failures |
| PowerPAK® SO-8L package | Leadless construction eliminates solder joint fatigue; bottom-side copper enables >2× thermal performance vs. standard SO-8 |
| AEC-Q101 qualification | Validated for automotive use including HTOL, TC, UHAST, and ESD per Rev. C test plan-no additional qualification needed |
| 175 °C maximum TJ | Enables operation in proximity to exhaust manifolds or turbochargers without thermal shutdown in closed-loop control |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: High-efficiency three-phase inverter driving brushless EPS motor with peak currents >30 A per phase. IC Role / Device Role / Timing Role: Low-side N-channel switch in synchronous buck topology; handles PWM switching at 20–40 kHz with minimal dead-time loss. Use Value: 0.0210 Ω RDS(on) reduces heat generation in confined steering column housing; 175 °C rating avoids thermal throttling during sustained assist. |
Use Scenario: Primary-side synchronous rectifier in bi-directional 48 V/12 V DC-DC converter for mild hybrid energy recovery. IC Role / Device Role / Timing Role: High-side switch controlling power flow from 48 V bus to 12 V subsystems; driven by isolated gate driver. Use Value: 100 V VDS withstands load dump transients; 1.8 °C/W RthJC allows direct mounting to aluminum chassis for passive cooling. |
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|
Use Scenario: High-speed, high-current switching of multi-hole gasoline direct injection solenoids requiring precise pulse-width control. IC Role / Device Role / Timing Role: Low-side driver with fast fall time (4.6–7 ns) to minimize injector dwell uncertainty and improve fuel metering accuracy. Use Value: 170 A pulsed drain current supports short-circuit robustness during injector coil energization; AEC-Q101 ensures long-term reliability over 15-year vehicle life. |
Use Scenario: PWM-controlled blower motor in cabin HVAC system operating continuously at elevated ambient temperatures near firewall. IC Role / Device Role / Timing Role: Half-bridge high-side switch delivering regulated 24–36 V to brushed DC motor; thermally managed via PCB copper pour. Use Value: −55 to +175 °C operating range prevents thermal shutdown during summer parking; 60 A continuous source current supports motor stall protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A (TC = 25 °C), RDS(on) = 0.0027 Ω @ 10 V - larger die, higher current, lower RDS(on), but 5× gate charge (95 nC) | Targeted at high-power traction inverters; less suitable for space-constrained EPS due to larger PowerFLAT™ 5x6 package | Select when peak current >100 A and thermal mass permits slower switching; avoid if gate driver output <2 A or layout area <30 mm² |
| IRF1010ETRLPBF | 100 V, 84 A, RDS(on) = 0.012 Ω @ 10 V - legacy TO-220AB package, no AEC-Q101 qualification, RthJC = 1.25 °C/W | Designed for industrial power supplies; lacks automotive qualification, thermal cycling validation, and leadless reliability | Acceptable only for non-automotive prototypes; not recommended for production vehicles due to missing AEC-Q101 and inferior package thermal performance |
Compared with STL220N10F7 and IRF1010ETRLPBF, SQJ488EP-T2_GE3 delivers optimal balance of compact PowerPAK® SO-8L footprint, AEC-Q101 compliance, and 0.0210 Ω RDS(on)-making it the preferred choice for volume automotive modules where board space, thermal management, and qualification rigor are jointly constrained.
Availability
SQJ488EP-T2_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid DC-DC converters, and engine control unit (ECU) fuel injector drivers requiring stable component supply across extended vehicle production lifecycles.
Supply support for SQJ488EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ488EP-T2_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® SO-8L family, engineered specifically for high-reliability, high-power-density applications in engine compartments and ADAS domains.
FAQ
What is the maximum continuous drain current rating for SQJ488EP-T2_GE3 at 125 °C case temperature?
The SQJ488EP-T2_GE3 has a maximum continuous drain current of 24 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8L package and ensures reliable operation in high-ambient environments such as under-hood automotive applications. The SQJ488EP-T2_GE3 maintains safe junction temperatures when properly heatsinked or mounted on adequate PCB copper area.
Is SQJ488EP-T2_GE3 qualified to AEC-Q101, and what does that qualification cover?
Yes, SQJ488EP-T2_GE3 is AEC-Q101 qualified per the manufacturer's documentation (S21-0678-Rev. C). This qualification covers stress tests including high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and electrostatic discharge (ESD) per human-body model (HBM) and machine model (MM). The SQJ488EP-T2_GE3 qualification confirms suitability for automotive electronic control units without additional component-level reliability screening.
What is the gate threshold voltage range for SQJ488EP-T2_GE3, and how does it affect controller compatibility?
The gate threshold voltage (VGS(th)) for SQJ488EP-T2_GE3 is specified as 1.5–2.5 V at ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V and 5 V logic-level gate drivers while maintaining noise immunity against spurious gate triggering. The SQJ488EP-T2_GE3 achieves full enhancement (RDS(on) ≤ 0.0210 Ω) at VGS = 10 V, making it compatible with both low-voltage microcontrollers and dedicated gate driver ICs.
Does SQJ488EP-T2_GE3 include integrated protection features like overtemperature shutdown or current limiting?
No, SQJ488EP-T2_GE3 is a discrete N-channel MOSFET without integrated protection circuitry. It relies on external system-level safeguards such as gate driver fault reporting, current-sense amplifiers, and microcontroller-based thermal monitoring. The SQJ488EP-T2_GE3 does feature 100 % unclamped inductive switching (UIS) testing and avalanche energy rating (EAS = 1.68 mJ), providing inherent ruggedness against inductive load transients-but active protection must be implemented externally.
What is the recommended PCB pad layout for SQJ488EP-T2_GE3's PowerPAK® SO-8L package?
The recommended minimum PCB pad layout for SQJ488EP-T2_GE3 follows Vishay document 63818: a 5.000 mm × 4.061 mm thermal pad for the bottom-side drain terminals, with 0.510 mm wide source/gate traces and 0.595 mm clearance between pads. The SQJ488EP-T2_GE3 requires solder paste stencil apertures matching the exposed copper geometry-not plated-through holes-to ensure void-free thermal interface and mechanical integrity. Reflow profile must comply with JEDEC J-STD-020 for leadless components.
SQJ488EP-T2_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 978 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ488EP-T2_GE3 FAQ
1.How can I place an order for SQJ488EP-T2_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ488EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ488EP-T2_GE3 reliable?
The price and inventory of SQJ488EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ488EP-T2_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ488EP-T2_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ488EP-T2_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ488EP-T2_GE3?
SQJ488EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ488EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ488EP-T2_GE3?
For technical support, including SQJ488EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ488EP-T2_GE3 requirements.
6.How does Aetrix verify that SQJ488EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ488EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ488EP-T2_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ488EP-T2_GE3?
All SQJ488EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ488EP-T2_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ488EP-T2_GE3 part is unused and in its original packaging.
Return procedure for SQJ488EP-T2_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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