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Vishay Siliconix SQJ840EP-T1_GE3
- Part No.:
- SQJ840EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ840EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 30V 30A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,355
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Product details
Overview
SQJ840EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 30 V VDS, 30 A continuous drain current at TC = 25 °C, and RDS(on) of 9.3 mΩ at VGS = 10 V - optimized for high-efficiency DC-DC converters and motor control in engine management systems.
For engineers reviewing the SQJ840EP-T1_GE3 datasheet, SQJ840EP-T1_GE3 pinout, SQJ840EP-T1_GE3 application, or SQJ840EP-T1_GE3 equivalent, this device delivers AEC-Q101 qualification, 175 °C junction temperature capability, and PowerPAK SO-8L package compatibility with space-constrained automotive PCB layouts.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. It supports gate drive voltages from 4.5 V to 10 V, with VGS(th) tightly specified between 1.2 V and 2.2 V, enabling robust turn-on under noisy automotive supply conditions.
The device features integrated avalanche energy rating (EAS = 26 mJ) and 100 % Rg/UIS tested reliability. Its thermal resistance RthJC = 3.2 °C/W enables high-power operation when mounted on thermally enhanced copper pads per the recommended PowerPAK SO-8L pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum drain-source blocking voltage suitable for 12 V/24 V automotive battery rail protection and load switching. |
| RDS(on) @ VGS = 10 V | 9.3 mΩ - enables <1 W conduction loss at 30 A, critical for minimizing heat generation in compact power stages. |
| RDS(on) @ VGS = 4.5 V | 13.8 mΩ - ensures reliable enhancement-mode operation with standard logic-level microcontroller GPIOs or low-voltage gate drivers. |
| ID (continuous) | 30 A at TC = 25 °C - supports high-current loads such as fuel injectors, radiator fans, and solenoid drivers without external heatsinking. |
| Qg (total gate charge) | 25.3 nC typical - balances switching speed and driver power requirements for PWM frequencies up to 200 kHz. |
| TJ operating range | –55 °C to +175 °C - meets under-hood thermal requirements for engine control units and transmission control modules. |
| AEC-Q101 qualified | Validated for automotive electronics per stress test standards including HTGB, HTRB, and UIS - required for ASIL-B system integration. |
Pinout & Package
Package: PowerPAK® SO-8L - leadless, surface-mount, thermally enhanced package with exposed drain paddle on bottom side; dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce bond wire inductance and improve current sharing; connected internally to source metallization. |
| 5, 6, 7, 8 (D) | Drain | Four drain terminals tied to large copper paddle - primary thermal path to PCB; requires soldered thermal pad for RthJA = 65 °C/W. |
| 4 (G) | Gate | Single gate terminal located adjacent to source pins - minimizes gate loop inductance for stable high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables ultra-low RDS(on) and high cell density in small footprint - improves power density over planar MOSFETs. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and single-pulse avalanche ruggedness - eliminates field failures in inductive load switching. |
| AEC-Q101 qualification | Validates reliability across temperature cycling, humidity, and mechanical shock - required for automotive production release. |
| PowerPAK SO-8L package | Reduces thermal resistance by 50 % vs. standard SO-8 - enables higher current handling without added heatsink area. |
| 175 °C rated junction | Supports operation in high-ambient environments (e.g., near exhaust manifolds) while maintaining safe margin to thermal shutdown. |
Applications
| Engine Control Unit (ECU) Load Switching | Automotive DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-side switching of fuel injector or ignition coil drivers in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: N-channel power switch controlled via isolated gate driver; handles repetitive 30 A pulsed loads at ≤ 10 kHz. Use Value: Low RDS(on) minimizes I²R heating during extended duty cycles; AEC-Q101 compliance ensures long-term reliability under vibration and thermal cycling. |
Use Scenario: Synchronous rectifier or high-side switch in 12 V → 5 V/3.3 V buck converters for ADAS camera modules. IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 200–500 kHz PWM with tight dead-time control. Use Value: Low Qg and Ciss reduce switching losses; 4.5 V gate threshold ensures compatibility with 5 V logic-level controllers. |
| Electric Power Steering (EPS) Motor Driver | Transmission Control Module (TCM) Solenoid Driver |
|
Use Scenario: Half-bridge leg in 3-phase inverter driving 12 V brushed or brushless EPS assist motors. IC Role / Device Role / Timing Role: Low-side switching element with fast fall time (17–25 ns) and low reverse recovery charge for reduced shoot-through risk. Use Value: 175 °C rating allows placement near motor controller ICs; avalanche energy rating protects against inductive kickback during fault conditions. |
Use Scenario: High-current valve/solenoid actuation in automatic transmission hydraulic control units. IC Role / Device Role / Timing Role: Robust on/off switch delivering 30 A peak current pulses with <15 ns rise/fall times for precise pressure modulation. Use Value: 100 % UIS testing ensures survival during repeated inductive turn-off transients; PowerPAK SO-8L thermal performance sustains >10⁶ cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 11.5 mΩ @ 10 V; TO-252 package; no AEC-Q101 qualification. | Lacks automotive qualification and thermal performance - suitable only for industrial/commercial designs. | Select only if AEC-Q101 is not required and board space permits larger DPAK footprint. |
| STL220N3LLH6 | RDS(on) = 1.8 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; higher cost. | Lower on-resistance but higher gate charge (42 nC); requires stronger gate driver for same switching speed. | Prefer for ultra-low-loss 48 V systems; avoid in 12 V applications where SQJ840EP-T1_GE3's 9.3 mΩ provides optimal cost/performance balance. |
Compared with IRF7470PBF and STL220N3LLH6, SQJ840EP-T1_GE3 delivers best-in-class thermal resistance (RthJC = 3.2 °C/W), AEC-Q101 compliance, and proven 175 °C operation - making it the preferred choice for volume automotive power switching where reliability, size, and thermal headroom are jointly constrained.
Availability
SQJ840EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and transmission control modules requiring stable component supply and full AEC-Q101 traceability.
Supply support for SQJ840EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ840EP-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK SO-8L family - engineered specifically for high-current, high-temperature switching in engine bay and chassis electronics.
FAQ
What is the maximum continuous drain current rating for SQJ840EP-T1_GE3 at 125 °C case temperature?
The SQJ840EP-T1_GE3 maintains a continuous drain current rating of 30 A even at TC = 125 °C, as confirmed in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on) temperature coefficient - enabling sustained high-current operation in thermally demanding automotive locations without derating.
Does SQJ840EP-T1_GE3 support logic-level gate drive?
Yes, SQJ840EP-T1_GE3 is fully logic-level compatible: its RDS(on) is specified at 13.8 mΩ with VGS = 4.5 V, and VGS(th) ranges from 1.2 V to 2.2 V. This ensures strong enhancement-mode turn-on using standard 5 V or 3.3 V microcontroller outputs or gate drivers without level-shifting circuitry.
Is SQJ840EP-T1_GE3 suitable for avalanche-prone circuits like inductive load switching?
Yes, SQJ840EP-T1_GE3 is 100 % UIS (Unclamped Inductive Switching) tested with single-pulse avalanche energy EAS = 26 mJ and IAS = 23 A. This validated ruggedness makes it appropriate for driving solenoids, relays, and ignition coils where unclamped inductive flyback is present.
What is the thermal resistance from junction to case (RthJC) for SQJ840EP-T1_GE3?
The SQJ840EP-T1_GE3 has a junction-to-case (drain) thermal resistance of 3.2 °C/W, measured under standard test conditions. This low value is enabled by the PowerPAK SO-8L's exposed copper drain paddle - allowing efficient heat transfer to the PCB thermal plane when soldered per Vishay's recommended pad layout.
How does the PowerPAK SO-8L package of SQJ840EP-T1_GE3 differ from standard SO-8 in terms of assembly?
The PowerPAK SO-8L is a leadless package with an exposed copper drain paddle on the bottom; unlike standard SO-8, it requires reflow soldering with a thermal pad stencil and cannot be hand-soldered with an iron. The exposed copper is unplated - a solder fillet at the edge is not guaranteed nor required, as interconnection relies on bottom-side solder coverage per IPC-7351B guidelines.
SQJ840EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.3mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1900 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 46W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ840EP-T1_GE3 FAQ
1.How can I place an order for SQJ840EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ840EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ840EP-T1_GE3 reliable?
The price and inventory of SQJ840EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ840EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ840EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ840EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ840EP-T1_GE3?
SQJ840EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ840EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ840EP-T1_GE3?
For technical support, including SQJ840EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ840EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ840EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ840EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ840EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ840EP-T1_GE3?
All SQJ840EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ840EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ840EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ840EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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