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Vishay Siliconix SQJ848EP-T1_GE3
- Part No.:
- SQJ848EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ848EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 47A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,644
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Product details
Overview
SQJ848EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Power MOSFET with 40 V VDS, 47 A continuous drain current at TC = 25 °C, and RDS(on) of 7.5 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for under-hood power switching in DC-DC converters and motor control modules.
For engineers reviewing the SQJ848EP-T1_GE3 datasheet, SQJ848EP-T1_GE3 pinout, SQJ848EP-T1_GE3 application, or SQJ848EP-T1_GE3 equivalent, key selection criteria include its 100 % Rg and UIS tested reliability, low RDS(on) at 4.5 V gate drive for 12 V battery systems, and PowerPAK® SO-8L package thermal performance with RthJC = 2.2 °C/W.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for high-current, low-voltage automotive switching. Its gate threshold voltage (1.5–2.5 V) enables robust turn-on with standard logic-level drivers, while its 15 nC total gate charge supports efficient high-frequency PWM operation up to 200 kHz in synchronous buck stages.
The device integrates a body diode with 0.8–1.1 V forward voltage at 10 A, rated for 120 A pulsed source current, and features guaranteed avalanche energy rating (EAS = 36 mJ) for inductive load commutation safety in motor drives and solenoid controls.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage for 12 V/24 V automotive bus protection and switching |
| RDS(on) @ VGS = 10 V | 7.5 mΩ - Enables <1 W conduction loss at 40 A in high-current DC-DC output stages |
| RDS(on) @ VGS = 4.5 V | 12.0 mΩ - Ensures reliable on-state performance with 5 V microcontroller gate drive |
| ID Continuous @ TC = 25 °C | 47 A - Supports high-power loads such as HVAC blowers and EPS assist motors without derating |
| TJ Operating Range | −55 to +175 °C - Validated for under-hood placement in engine control units and transmission modules |
| EAS | 36 mJ - Withstands repetitive inductive energy spikes during motor phase commutation |
| RthJC | 2.2 °C/W - Enables direct heatsink mounting for thermal management in space-constrained modules |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, exposed-drain thermal pad), 5.13 mm × 6.15 mm footprint, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 7, 8 | Source (S) | Common source connection for internal parallel die; low-inductance return path for high di/dt switching |
| 4 | Gate (G) | Control terminal with 0.5–1.5 Ω gate resistance; compatible with standard gate drivers without external series resistor |
| 6 | Drain (D) | Exposed copper thermal pad - primary heat transfer path to PCB ground plane or heatsink |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 Qualified | Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD HBM ≥ 2 kV |
| 100 % Rg Tested | Ensures consistent gate drive timing and eliminates risk of gate oscillation in parallel configurations |
| 100 % UIS Tested | Guarantees unclamped inductive switching robustness across full temperature range without derating |
| Low Qgd/Qg Ratio | 5.1 nC / 15 nC = 0.34 - Reduces Miller-induced shoot-through risk in half-bridge topologies |
| Enhanced Body Diode dV/dt Rating | Rated for >50 V/ns - Prevents false turn-on during high-speed switching in bidirectional power flow circuits |
Applications
| Automotive DC-DC Converters | Electric Power Steering (EPS) |
|---|---|
Use Scenario: 48 V–12 V bidirectional buck-boost converter in 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 100–200 kHz PWM frequency. Use Value: 7.5 mΩ RDS(on) minimizes conduction loss at 40+ A load current; 175 °C rating allows placement near transformer without thermal throttling. |
Use Scenario: Three-phase inverter driving 12 V brushed or brushless assist motor in column-assist EPS systems. IC Role / Device Role / Timing Role: Low-side power switch with fast 10 ns fall time enabling precise torque ripple control. Use Value: 120 A pulsed drain current and 36 mJ EAS withstand motor stall and regenerative braking events without failure. |
| Engine Control Unit (ECU) Load Drivers | On-Board Charger (OBC) Auxiliary Supplies |
Use Scenario: High-current solenoid and fuel injector driver in gasoline/diesel engine management modules. IC Role / Device Role / Timing Role: Single N-channel switch replacing discrete BJT/driver combinations for reduced board area. Use Value: 2.5 V VGS(th) max ensures clean turn-on with 3.3 V MCU I/O; 100 % UIS testing prevents latch-up during inductive kickback. |
Use Scenario: 12 V auxiliary supply regulation stage in EV on-board chargers, powering fans, sensors, and communication ICs. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated flyback or forward converter secondary side. Use Value: 0.8 V VSD body diode forward drop improves light-load efficiency; PowerPAK SO-8L thermal pad reduces case temperature by >15 °C vs. SO-8. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 9.0 mΩ @ 10 V; not AEC-Q101 qualified; TO-252 package with higher RthJA (62 °C/W) | Limited to non-safety-critical industrial power supplies; unsuitable for under-hood automotive deployment | Select only for cost-sensitive non-automotive designs where qualification and thermal performance are secondary |
| STL220N4F7AG | RDS(on) = 6.2 mΩ @ 10 V; AEC-Q101 qualified; same PowerFLAT 5×6 package but different pinout (G-S-D vs. S-G-S) | Requires PCB layout revision due to gate-source pin swap; higher gate charge (22 nC) increases driver loss | Consider only if lower RDS(on) justifies redesign; verify gate drive strength compatibility before migration |
Compared with IRF7470PBF and STL220N4F7AG, the SQJ848EP-T1_GE3 delivers optimal balance of automotive qualification, thermal efficiency (RthJC = 2.2 °C/W), and gate drive compatibility - making it the preferred choice for new AEC-Q101-compliant designs requiring no layout change from legacy PowerPAK SO-8L footprints.
Availability
SQJ848EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and engine control unit applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for Tier 1 OEM programs.
Supply support for SQJ848EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ848EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in engine compartments and ADAS subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ848EP-T1_GE3 at 125 °C case temperature?
The SQJ848EP-T1_GE3 supports 30 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures safe operation in high-ambient environments like engine control units. The SQJ848EP-T1_GE3 maintains RDS(on) stability up to 175 °C junction temperature, supporting robust thermal design margins.
Is SQJ848EP-T1_GE3 suitable for use in a synchronous rectifier application with 4.5 V gate drive?
Yes, the SQJ848EP-T1_GE3 is fully characterized for 4.5 V gate drive, delivering RDS(on) = 12.0 mΩ at ID = 8.7 A. Its 1.5–2.5 V gate threshold voltage ensures strong enhancement-mode behavior and noise immunity in 5 V logic-controlled synchronous rectifiers. The SQJ848EP-T1_GE3 also exhibits low Qgd/Qg ratio (0.34), minimizing risk of false turn-on during high dv/dt transitions.
Does SQJ848EP-T1_GE3 have an integrated Schottky body diode?
No, the SQJ848EP-T1_GE3 uses a standard silicon body diode inherent to its planar trench MOSFET structure. Its forward voltage is specified as 0.8–1.1 V at IF = 10 A and VGS = 0 V. While not a Schottky, this diode is 100 % UIS tested and rated for 120 A pulsed source current, making it suitable for freewheeling in motor drives and DC-DC converters where reverse recovery is managed by synchronous control.
What is the thermal resistance from junction to case (RthJC) for SQJ848EP-T1_GE3, and how is it measured?
The SQJ848EP-T1_GE3 has RthJC = 2.2 °C/W, measured from junction to the exposed drain pad (pin 6) under standard JEDEC test conditions. This value is validated using transient dual-interface testing and applies when the device is soldered to a 1" × 1" FR-4 PCB with 2 oz copper on both sides. The low RthJC enables direct thermal coupling to heatsinks or chassis ground, critical for automotive power modules where airflow is limited.
Can SQJ848EP-T1_GE3 be used in parallel configurations, and what precautions apply?
Yes, the SQJ848EP-T1_GE3 supports paralleling due to its positive temperature coefficient of RDS(on) and 100 % Rg testing, which ensures matched gate characteristics. To maintain current sharing, use symmetrical PCB layout with individual gate resistors (≤ 10 Ω), Kelvin source connections, and thermal coupling between devices. The SQJ848EP-T1_GE3's low Qgd further reduces risk of dynamic imbalance during switching transitions.
SQJ848EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ848EP-T1_GE3 FAQ
1.How can I place an order for SQJ848EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ848EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ848EP-T1_GE3 reliable?
The price and inventory of SQJ848EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ848EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ848EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ848EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ848EP-T1_GE3?
SQJ848EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ848EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ848EP-T1_GE3?
For technical support, including SQJ848EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ848EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ848EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ848EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ848EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ848EP-T1_GE3?
All SQJ848EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ848EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ848EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ848EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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