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Vishay Siliconix SQJ850EP-T1_GE3
- Part No.:
- SQJ850EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ850EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 60V 24A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,244
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Product details
Overview
SQJ850EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 24 A continuous drain current at 25 °C, and 0.023 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ850EP-T1_GE3 datasheet, SQJ850EP-T1_GE3 pinout, SQJ850EP-T1_GE3 application, or SQJ850EP-T1_GE3 equivalent, key selection criteria include its 3.3 °C/W junction-to-case thermal resistance, 100% Rg and UIS tested reliability, PowerPAK® SO-8L leadless package, and verified 175 °C operation in automotive environments.
Technical Context
This MOSFET uses trench gate technology to achieve low on-resistance and fast switching with 20 nC total gate charge and 29 S transconductance at 10.3 A. Its gate threshold voltage is tightly specified (1.5–2.5 V) and exhibits minimal drift over -55 to +175 °C.
The device integrates a robust body diode with 0.8–1.2 V forward voltage at 3.8 A and supports unclamped inductive switching up to 11 mJ avalanche energy. Thermal design is enabled by validated junction-to-ambient (70 °C/W) and junction-to-case (3.3 °C/W) resistance values under defined PCB mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin |
| RDS(on) @ VGS = 10 V | 0.023 Ω - Enables <1.5 W conduction loss at 24 A, critical for thermally constrained modules |
| ID Continuous @ TC = 25 °C | 24 A - Supports high-current motor drive and power supply outputs without forced cooling |
| TJ Operating Range | -55 to +175 °C - Validated for engine bay placement per AEC-Q101 stress testing |
| Qg Total Gate Charge | 20 nC - Determines driver strength requirement; enables efficient 100 kHz+ switching in DC-DC stages |
| RthJC | 3.3 °C/W - Enables direct heatsinking via exposed drain pad for compact thermal management |
| EAS | 11 mJ - Specifies safe single-pulse inductive energy handling during fault events |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed copper drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Source (S) | Seven parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 6 | Gate (G) | Single gate input with 0.20–2.04 Ω internal gate resistance; compatible with standard 10 V logic-level drivers |
| Drain Pad (Bottom) | Drain (D) | Exposed copper thermal pad serves as primary drain connection and heat path to PCB; no solder fillet required |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 Qualified | Validated for automotive use including temperature cycling, HTRB, and UIS per Rev. D test plan |
| 100% Rg and UIS Tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness |
| Halogen-Free Construction | Complies with IEC 61249-2-21; eliminates brominated flame retardants without compromising thermal performance |
| PowerPAK® SO-8L Package | 30% lower RthJA vs. standard SO-8; enables higher power density in space-constrained ECUs |
| 175 °C Junction Rating | Supports operation adjacent to engines or inverters where ambient exceeds 125 °C |
Applications
| Automotive Motor Control | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side switch in brushed DC fan or pump driver within engine compartment. IC Role / Device Role / Timing Role: Power switch controlling motor phase current; operates in PWM mode at 20–50 kHz. Use Value: 0.023 Ω RDS(on) minimizes I²R losses at 20 A peak, while 175 °C rating ensures reliability near hot exhaust manifolds. |
Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converter for start-stop systems. IC Role / Device Role / Timing Role: High-efficiency power switch in hard-switched buck-boost topology with 100 kHz switching frequency. Use Value: 20 nC Qg and 29 S gfs enable fast turn-on/turn-off, reducing switching losses and improving conversion efficiency above 95%. |
| Commercial Vehicle Battery Disconnect | Industrial BLDC Inverter Half-Bridge |
Use Scenario: Isolation switch between lithium-ion traction battery and auxiliary loads in Class 8 trucks. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical contactor; handles 24 A continuous and 96 A pulsed load currents. Use Value: 11 mJ EAS and 15 A IAS provide fault tolerance during cable short-circuit events without destructive failure. |
Use Scenario: Low-side switch in three-phase BLDC inverter for HVAC compressors in industrial settings. IC Role / Device Role / Timing Role: Fast-switching power stage element operating at 15–30 kHz with precise dead-time control. Use Value: Seven-source-pin configuration reduces common-source inductance, improving shoot-through immunity and commutation stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.027 Ω @ 10 V; TO-252 package; RthJA = 62 °C/W; not AEC-Q101 qualified | Requires larger PCB area; limited to non-automotive industrial use due to qualification gap | Select when cost sensitivity outweighs automotive compliance and thermal density requirements |
| STL220N6F7 | RDS(on) = 0.022 Ω @ 10 V; PowerFLAT™ 5x6 package; RthJC = 2.5 °C/W; AEC-Q101 qualified | Superior thermal performance but requires different footprint and layout; higher gate charge (25 nC) | Select when maximum power density and junction cooling are prioritized over pin compatibility and gate drive simplicity |
Compared with IRF7470PBF and STL220N6F7, the SQJ850EP-T1_GE3 delivers balanced performance: AEC-Q101 compliance plus PowerPAK® SO-8L's proven manufacturability, moderate gate charge, and seven-source-pin layout for noise-sensitive motor drives - making it optimal for volume automotive ECUs where qualification, thermal management, and layout reuse matter.
Availability
SQJ850EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive motor control, 48 V DC-DC conversion, and battery management systems requiring stable component supply across extended product lifecycles.
Supply support for SQJ850EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ850EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability, high-temperature switching in engine control units, ADAS actuators, and electrified powertrain subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ850EP-T1_GE3 at 125 °C case temperature?
The SQJ850EP-T1_GE3 supports 17 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8L package and ensures reliable operation in high-ambient under-hood environments where case temperatures routinely exceed 100 °C. The SQJ850EP-T1_GE3 maintains safe SOA boundaries up to this current level when mounted per Vishay's recommended 1" square FR-4 PCB layout.
Does SQJ850EP-T1_GE3 require special rework procedures due to its leadless PowerPAK® SO-8L package?
Yes - manual soldering with a soldering iron is not recommended for the SQJ850EP-T1_GE3, per Vishay's rework guidelines. The PowerPAK® SO-8L's exposed drain pad and fine-pitch source terminals demand controlled thermal profiles: reflow per JEDEC J-STD-020 (peak 260 °C), and hot-air or infrared rework with preheating and localized heating. The SQJ850EP-T1_GE3's singulation process leaves un-plated copper at terminal ends, so solder fillet formation isn't guaranteed - but bottom-side interconnection remains robust via the large thermal pad.
How is the gate threshold voltage (VGS(th)) of SQJ850EP-T1_GE3 specified, and why does it matter for 3.3 V microcontroller drive?
The SQJ850EP-T1_GE3 has a gate threshold voltage range of 1.5–2.5 V at ID = 250 µA, enabling turn-on with 3.3 V logic. However, full enhancement requires ≥4.5 V for low RDS(on); at 3.3 V, RDS(on) rises to ~0.05 Ω. For reliable 3.3 V drive, external gate boosting or level-shifting is advised. The SQJ850EP-T1_GE3's tight VGS(th) distribution improves system consistency across temperature and production lots.
What does "100% Rg and UIS tested" mean for SQJ850EP-T1_GE3, and how does it impact field reliability?
"100% Rg and UIS tested" means every SQJ850EP-T1_GE3 unit undergoes production screening for gate resistance (0.20–2.04 Ω) and unclamped inductive switching (15 A IAS, 11 mJ EAS). This eliminates latent defects that could cause premature failure during load dump or motor stall events. For SQJ850EP-T1_GE3 users, this translates to higher confidence in long-term reliability in automotive safety-critical functions without additional system-level derating.
Can SQJ850EP-T1_GE3 be used in parallel configurations, and what layout considerations apply?
Yes - the SQJ850EP-T1_GE3 supports paralleling due to its positive temperature coefficient of RDS(on) and seven-source-pin symmetry, which balances current sharing. Layout must ensure matched gate loop inductance (use Kelvin source routing), identical thermal paths, and symmetrical drain/source copper areas. For SQJ850EP-T1_GE3, avoid shared gate resistors; individual 1–5 Ω gate resistors per device are recommended to damp oscillation and equalize switching timing.
SQJ850EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1225 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ850EP-T1_GE3 FAQ
1.How can I place an order for SQJ850EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ850EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ850EP-T1_GE3 reliable?
The price and inventory of SQJ850EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ850EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ850EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ850EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ850EP-T1_GE3?
SQJ850EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ850EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ850EP-T1_GE3?
For technical support, including SQJ850EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ850EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ850EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ850EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ850EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ850EP-T1_GE3?
All SQJ850EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ850EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ850EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ850EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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