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Vishay Siliconix SQJ850EP-T2_GE3
- Part No.:
- SQJ850EP-T2_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ850EP-T2_GE3.pdf
- Description:
- N-CHANNEL 60-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,710
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Product details
Overview
SQJ850EP-T2_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 60 V VDS, 24 A continuous drain current at 25 °C, and RDS(on) of 0.023 Ω at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ850EP-T2_GE3 datasheet, SQJ850EP-T2_GE3 pinout, SQJ850EP-T2_GE3 application, or SQJ850EP-T2_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 3.3 °C/W), gate charge (Qg = 20–30 nC), avalanche energy rating (EAS = 11 mJ), and PowerPAK® SO-8L package dimensions - all critical for layout, thermal design, and reliability validation in automotive power stages.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low RDS(on) and fast switching in 12 V/24 V automotive systems. Its 100 % Rg and UIS tested construction ensures robustness against voltage transients and unclamped inductive switching stress.
The device features a source-drain diode with VSD = 0.8–1.2 V at IF = 3.8 A and supports gate drive voltages from 4.5 V to 10 V, enabling compatibility with both 3.3 V logic-level controllers and standard 10 V gate drivers in motor gate driver ICs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; suitable for 24 V nominal automotive bus with transient margin. |
| RDS(on) @ VGS = 10 V | 0.023 Ω - Confirmed at ID = 10.3 A and 25 °C; enables <1.5 W conduction loss at 20 A. |
| RDS(on) @ VGS = 4.5 V | 0.032 Ω - Validated at ID = 8.7 A; supports logic-level drive without gate boosting. |
| ID (continuous) | 24 A @ TC = 25 °C - Requires heatsinking or PCB copper area to sustain at elevated ambient temperatures. |
| EAS | 11 mJ - Single-pulse avalanche energy rating; validates ruggedness in inductive load switching. |
| Qg | 20–30 nC - Total gate charge range determines required gate driver peak current for <30 ns turn-on delay. |
| RthJC | 3.3 °C/W - Junction-to-case thermal resistance; enables direct thermal interface to heatsink or metal-core PCB. |
| TJ max | +175 °C - Extended junction temperature rating allows operation in engine compartment environments. |
Pinout & Package
Package: PowerPAK® SO-8L (single), surface-mount, leadless, with exposed drain pad on bottom side. Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H). Thermal pad must be soldered to PCB copper for thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤ ±20 V drive; input capacitance Ciss = 980–1225 pF affects gate driver sizing. |
| 2 (S) | Source | Power return path and reference for gate drive; tied to system ground or floating node in high-side configuration. |
| 3 (S) | Source | Second source connection; paralleled with Pin 2 to reduce source inductance and improve switching stability. |
| 4 (S) | Source | Third source connection; reduces common-source inductance in high-di/dt switching applications. |
| 5 (D) | Drain | Main power output; connected to exposed copper thermal pad (Pin 5 functionally merged with thermal pad). |
| 6 (D) | Drain | Secondary drain terminal; electrically tied to Pin 5 and thermal pad for enhanced current handling. |
| 7 (D) | Drain | Third drain terminal; provides low-inductance path to high-current bus or battery rail. |
| 8 (D) | Drain | Fourth drain terminal; completes multi-terminal drain structure for minimized loop inductance in motor phase legs. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD - no additional qualification needed for Tier 1 programs. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching survival - eliminates field failures from parametric drift or avalanche weakness. |
| TrenchFET® technology | Enables 0.023 Ω RDS(on) in PowerPAK SO-8L footprint - achieves same on-resistance as larger SO-8 devices while reducing board space by 30 %. |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports global automotive OEM material declarations and end-of-life compliance. |
| 175 °C operating junction | Rated for continuous operation at full current up to +150 °C ambient with proper PCB thermal design - eliminates derating in under-hood modules. |
| Exposed drain thermal pad | Bottom-side copper pad directly connects to PCB thermal plane - delivers RthJA = 70 °C/W (PCB mount) and enables >3× power dissipation vs. standard SO-8. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-speed switching of 12 V fuel injectors with inductive kickback up to 100 V. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; handles repetitive UIS events during PWM modulation. Use Value: 11 mJ EAS rating absorbs inductive energy without snubber, reducing BOM count and PCB area. |
Use Scenario: PWM-controlled 24 V blower motor with peak currents up to 30 A during stall conditions. IC Role / Device Role / Timing Role: High-current half-bridge low-side switch; synchronized with complementary high-side MOSFET. Use Value: 0.023 Ω RDS(on) limits conduction loss to <1.4 W at 24 A, enabling compact heatsink-less design. |
| 12 V/48 V Mild Hybrid DC-DC Converter | Commercial Vehicle Battery Disconnect Switch |
Use Scenario: Synchronous rectification in bidirectional buck-boost converter interfacing 12 V starter battery and 48 V Li-ion pack. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier; commutated at 200–500 kHz with tight dead-time control. Use Value: Low Qg (20–30 nC) and fast switching (tr = 15–22 ns) minimize switching losses at high frequency. |
Use Scenario: Solid-state replacement for mechanical relay in 24 V commercial truck battery isolation circuits. IC Role / Device Role / Timing Role: High-reliability main power switch; subjected to load dump transients and cold-crank voltage dips. Use Value: AEC-Q101 qualification and 60 V VDS withstand 35 V load dump spikes with margin, eliminating fuse dependency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.027 Ω @ 10 V; SO-8 package; not AEC-Q101 qualified; RthJC = 4.0 °C/W. | Limited to industrial/commercial automotive accessories; unsuitable for safety-critical ECU modules. | Select only for cost-sensitive non-AEC designs where 0.004 Ω higher RDS(on) and lower thermal performance are acceptable. |
| STL220N6F7 | RDS(on) = 0.022 Ω @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; Qg = 32 nC. | Higher gate charge increases driver power demand; smaller thermal pad limits heat spreading vs. PowerPAK SO-8L. | Prefer when board space is constrained and thermal management relies on top-side cooling; verify gate driver capability for 32 nC Qg. |
Compared with IRF7470PBF and STL220N6F7, the SQJ850EP-T2_GE3 offers the best balance of AEC-Q101 compliance, lowest RthJC (3.3 °C/W), and moderate Qg, making it optimal for thermally demanding, high-reliability automotive power stages where layout space permits the PowerPAK SO-8L footprint.
Availability
SQJ850EP-T2_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor drives, and 12 V/48 V mild hybrid converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SQJ850EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ850EP-T2_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine bay and chassis-mounted electronic control modules.
FAQ
What is the maximum continuous drain current rating for SQJ850EP-T2_GE3 at 125 °C case temperature?
The SQJ850EP-T2_GE3 supports 17 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and must be validated with actual PCB copper area and airflow. At 175 °C junction, the device remains functional but requires strict thermal design to maintain reliability over lifetime.
Is SQJ850EP-T2_GE3 pin-compatible with standard SO-8 MOSFETs?
No - SQJ850EP-T2_GE3 uses the PowerPAK® SO-8L package, which has identical outline dimensions to SO-8 but features a bottom-exposed drain thermal pad and different internal pin mapping. Its eight terminals include four drain and three source connections, unlike conventional SO-8's single-source/single-drain layout. PCB layout must follow Vishay's recommended pad pattern (Doc #63818) to ensure thermal and electrical integrity.
Does SQJ850EP-T2_GE3 require a gate resistor for safe operation?
Yes - although not specified in the datasheet as mandatory, a gate resistor (typically 5–22 Ω) is required to control dV/dt, suppress ringing, and limit peak gate current during switching. The SQJ850EP-T2_GE3's Qg of 20–30 nC and Ciss of 980–1225 pF interact with driver impedance; omitting the resistor risks shoot-through in half-bridge configurations and EMI issues in high-frequency applications.
What is the significance of "100 % UIS tested" for SQJ850EP-T2_GE3?
"100 % UIS tested" means every SQJ850EP-T2_GE3 unit undergoes unclamped inductive switching stress screening at production test - verifying ability to absorb 11 mJ avalanche energy without degradation. This ensures field reliability in automotive inductive loads like solenoids and motors, where voltage spikes exceed VDS rating. It is a key differentiator versus non-screened MOSFETs that may fail prematurely under real-world transients.
Can SQJ850EP-T2_GE3 be used in a high-side switch configuration?
Yes - the SQJ850EP-T2_GE3 is an N-channel MOSFET and can be used in high-side configuration when paired with a gate driver capable of providing VGS ≥ 10 V above the drain rail (e.g., bootstrap or isolated driver). Its 60 V VDS, 175 °C rating, and AEC-Q101 qualification make it suitable for high-side battery disconnect and pre-charge circuits in 24 V commercial vehicle systems, provided gate drive timing and voltage margin are carefully designed.
SQJ850EP-T2_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1225 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ850EP-T2_GE3 FAQ
1.How can I place an order for SQJ850EP-T2_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ850EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ850EP-T2_GE3 reliable?
The price and inventory of SQJ850EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ850EP-T2_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ850EP-T2_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ850EP-T2_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ850EP-T2_GE3?
SQJ850EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ850EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ850EP-T2_GE3?
For technical support, including SQJ850EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ850EP-T2_GE3 requirements.
6.How does Aetrix verify that SQJ850EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ850EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ850EP-T2_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ850EP-T2_GE3?
All SQJ850EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ850EP-T2_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ850EP-T2_GE3 part is unused and in its original packaging.
Return procedure for SQJ850EP-T2_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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