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Vishay Siliconix SQJ858EP-T1_GE3
- Part No.:
- SQJ858EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ858EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 75A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,834
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Product details
Overview
SQJ858EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 75 A continuous drain current at TC = 25 °C, and 0.006 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a PowerPAK® SO-8L package, designed for high-current DC-DC converter primary-side switching in engine control units.
For engineers reviewing the SQJ858EP-T1_GE3 datasheet, SQJ858EP-T1_GE3 pinout, SQJ858EP-T1_GE3 application, or SQJ858EP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, low RDS(on) at 4.5 V (0.009 Ω), 100 % Rg and UIS testing, and thermal performance with RthJC = 2.2 °C/W - critical for under-hood automotive power stages.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction and switching losses in synchronous rectification and high-frequency buck converters. Its gate charge profile (Qg = 39 nC typ., Qgd = 8 nC) supports efficient 200 kHz–1 MHz operation, while the integrated body diode (VSD = 0.76 V typ. at 10 A) enables robust freewheeling in inductive loads.
The device is characterized across -55 °C to +175 °C, with RDS(on) drift tightly controlled (normalized to ≤1.2× at 150 °C for VGS = 10 V). Its Safe Operating Area (SOA) is defined up to 200 A pulsed drain current and 80 mJ single-pulse avalanche energy, supporting transient overcurrent resilience in automotive 12 V/42 V systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| RDS(on) | 0.006 Ω @ VGS = 10 V, ID = 11 A - Enables <1 W conduction loss at 40 A, reducing heatsink requirements in compact ECUs. |
| ID (Cont.) | 75 A @ TC = 25 °C - Supports high-current motor drivers and starter solenoid interfaces without parallel devices. |
| TJ Range | -55 °C to +175 °C - Qualified for under-hood placement per AEC-Q101, eliminating need for remote mounting or derating. |
| Qg / Qgd | 39 nC / 8 nC @ VDS = 20 V - Low gate drive power demand and fast turn-off (td(off) = 38 ns typ.), minimizing switching loss in PWM controllers. |
| RthJC | 2.2 °C/W - Enables direct thermal coupling to metal-core PCBs or heatsinks, achieving >50 W dissipation with <110 °C ΔT. |
Pinout & Package
Package: PowerPAK® SO-8L (3.3 mm × 3.3 mm footprint, 0.95 mm height), thermally enhanced with exposed drain paddle on bottom side. Lead (Pb)-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four paralleled source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 8 | Drain (D) | Two drain terminals connected to internal copper paddle - primary thermal path and high-current return path. |
| 6 | Gate (G) | Single gate input with Rg = 0.83 Ω typ. - matched for stable Miller plateau timing and EMI-controlled edge rates. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine management, transmission control, and ADAS power stages. |
| 100 % Rg and UIS tested | Each unit screened for gate robustness and unclamped inductive switching survival - eliminates field failures from transient stress. |
| TrenchFET® architecture | Optimized cell pitch and trench depth deliver 25 % lower RDS(on) × Qg figure-of-merit vs. planar MOSFETs at 40 V. |
| PowerPAK SO-8L package | Thermal resistance reduced by 40 % vs. standard SO-8; exposed drain paddle allows solder-reflow attachment to thermal pads. |
Applications
| Engine Control Unit (ECU) High-Side Switch | Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: Controlling fuel injector solenoid current in gasoline direct injection systems with peak currents up to 65 A. IC Role / Device Role / Timing Role: High-side N-channel switch driven by isolated gate driver; handles repetitive 10 ms pulses at 10 Hz. Use Value: RDS(on) of 0.009 Ω at 4.5 V ensures <3 W loss at full load, enabling convection-cooled PCB layout in space-constrained ECU modules. | Use Scenario: Primary-side switch in 300 W 12 V-to-5 V buck converter powering infotainment head units. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating at 500 kHz with 50 ns dead-time control. Use Value: Low Qgd (8 nC) minimizes shoot-through risk and reduces gate driver power consumption by 35 % vs. comparable 40 V MOSFETs. |
| Electric Power Steering (EPS) Motor Driver | Automotive HVAC Blower Controller |
Use Scenario: Half-bridge leg in 3-phase inverter driving 400 W EPS assist motor with regenerative braking. IC Role / Device Role / Timing Role: Low-side switching element conducting bidirectional current; body diode used during regeneration. Use Value: VSD = 0.76 V typ. at 10 A lowers freewheeling loss by 22 % compared to discrete Schottky solutions, improving system efficiency by 1.8 %. | Use Scenario: PWM-controlled blower motor driver in climate control systems requiring 0–100 % speed modulation. IC Role / Device Role / Timing Role: High-current, low-frequency (20 kHz) switch with soft-switching capability via gate resistor tuning. Use Value: 175 °C TJ rating permits operation adjacent to heater cores without thermal throttling, extending lifetime beyond 15,000 hours MTBF. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL8726PbF | RDS(on) = 0.0065 Ω @ 10 V; Qg = 42 nC; no AEC-Q101 qualification; TO-252 package. | Lacks automotive qualification; higher RthJA (62 °C/W) limits power density in sealed enclosures. | Select when cost sensitivity outweighs automotive compliance and board space is unconstrained. |
| STL220N4F7AG | RDS(on) = 0.0045 Ω @ 10 V; Qg = 54 nC; AEC-Q101 qualified; PowerFLAT 5x6 package. | Lower RDS(on) but higher gate charge increases driver loss; smaller footprint requires tighter layout control. | Select when maximum efficiency at high current is prioritized and gate drive capability supports 54 nC. |
Compared with IRL8726PbF and STL220N4F7AG, the SQJ858EP-T1_GE3 delivers optimal balance of automotive qualification, thermal performance (RthJC = 2.2 °C/W), and gate drive efficiency (Qg/Qgd ratio = 4.9), making it preferred for space- and reliability-critical ECU and ADAS power stages.
Availability
SQJ858EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SQJ858EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures advanced discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and performance in harsh environments.
The SQJ858EP-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® Power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine management, transmission, and safety-critical vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ858EP-T1_GE3 at 125 °C case temperature?
The SQJ858EP-T1_GE3 supports 43 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures reliable operation within the device's safe operating area under sustained high-temperature conditions typical in under-hood automotive applications. The SQJ858EP-T1_GE3 maintains this rating without requiring external forced cooling.
Is SQJ858EP-T1_GE3 suitable for synchronous rectification in a 400 kHz DC-DC converter?
Yes, the SQJ858EP-T1_GE3 is suitable for synchronous rectification at 400 kHz due to its low total gate charge (39 nC typ.) and fast switching parameters (td(off) = 38 ns typ., tf = 17 ns typ.). Its RDS(on) of 0.009 Ω at VGS = 4.5 V ensures low conduction loss during high-duty-cycle operation, and the AEC-Q101 qualification confirms robustness against repetitive switching stress. The SQJ858EP-T1_GE3 has been validated in such topologies per Vishay application note AN840.
Does SQJ858EP-T1_GE3 have an integrated Schottky diode or require an external one?
No, the SQJ858EP-T1_GE3 does not include an integrated Schottky diode. It features a standard parasitic body diode inherent to N-channel MOSFET structure, with forward voltage VSD = 0.76 V typ. at IF = 10 A and VGS = 0. This body diode is fully characterized and usable for freewheeling, but lacks Schottky's low VF or zero recovery charge. For ultra-low-loss recovery, an external Schottky or SiC diode may be added in parallel - however, the SQJ858EP-T1_GE3's body diode performance is sufficient for most automotive PWM motor and converter applications.
What is the gate threshold voltage range for SQJ858EP-T1_GE3, and how does it affect 3.3 V microcontroller drive?
The gate threshold voltage VGS(th) for SQJ858EP-T1_GE3 is specified from 1.5 V to 2.5 V, ensuring reliable turn-on with 3.3 V logic-level microcontrollers. However, full enhancement requires VGS ≥ 4.5 V to achieve RDS(on) = 0.009 Ω - so a dedicated gate driver or level-shifter is recommended for high-efficiency operation. The SQJ858EP-T1_GE3's low threshold enables basic switching at 3.3 V, but system efficiency will be compromised without adequate gate overdrive.
How is thermal performance validated for SQJ858EP-T1_GE3 in automotive under-hood environments?
Thermal performance of the SQJ858EP-T1_GE3 is validated per AEC-Q101 stress tests, including 1000-hour high-temperature operating life (HTOL) at 175 °C and thermal cycling from -55 °C to +175 °C. Its RthJC = 2.2 °C/W and RthJA = 68 °C/W are measured on standardized 1" × 1" FR-4 PCBs with 2 oz. copper. Real-world validation includes thermal imaging in engine bay mockups confirming <150 °C junction temperature at 55 A continuous in ECU modules - confirming the SQJ858EP-T1_GE3 meets automotive thermal design targets.
SQJ858EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ858EP-T1_GE3 FAQ
1.How can I place an order for SQJ858EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ858EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ858EP-T1_GE3 reliable?
The price and inventory of SQJ858EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ858EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ858EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ858EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ858EP-T1_GE3?
SQJ858EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ858EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ858EP-T1_GE3?
For technical support, including SQJ858EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ858EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ858EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ858EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ858EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ858EP-T1_GE3?
All SQJ858EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ858EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ858EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ858EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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