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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ860EP-T1_BE3

Name: SQJ860EP-T1_BE3
Brand: Vishay Siliconix
SKU: SQJ860EP-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ860EP-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8 Dual

Datasheet:: SQJ860EP-T1_BE3.pdf

Description:: N-CHANNEL 40-V (D-S) 175C MOSFET

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Product details

Overview

SQJ860EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 60 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It features 6.0 mΩ R_DS(on) at V_GS = 10 V and 7.3 mΩ at 4.5 V, housed in a leadless PowerPAK® SO-8L package. It is used in high-efficiency DC–DC converters and motor control stages in engine management systems.

For engineers reviewing the SQJ860EP-T1_BE3 datasheet, SQJ860EP-T1_BE3 pinout, SQJ860EP-T1_BE3 application, or SQJ860EP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS tested reliability, thermal performance with R_thJC = 3.1 °C/W, and suitability for high-current automotive switching where low conduction loss and robust avalanche capability are required.

Technical Context

This MOSFET employs trench gate technology to achieve low on-resistance and fast switching with Q_g = 34 nC (typ.) and Q_gd = 7 nC (typ.). Its body diode exhibits t_rr = 29 ns (typ.) and Q_rr = 27 nC (typ.), supporting synchronous rectification and hard-switched topologies.

The device operates across -55 °C to +175 °C junction range and is characterized for stable R_DS(on) up to 175 °C (0.0122 Ω max at 10 A). Its safe operating area supports pulsed drain currents up to 120 A and single-pulse avalanche energy of 51 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage in high-side or low-side switch configurations without breakdown.
R_DS(on) @ V_GS = 10 V	6.0 mΩ - Enables ≤ 3.6 W conduction loss at 60 A, critical for thermal management in compact automotive modules.
R_DS(on) @ V_GS = 4.5 V	7.3 mΩ - Ensures reliable turn-on with 4.5 V logic-level gate drive, compatible with standard automotive microcontrollers.
I_D (continuous, T_C = 25 °C)	60 A - Supports high-power loads such as fuel pump drivers or EPS motor phases without external heatsinking.
E_AS	51 mJ - Withstands repetitive inductive switching surges in motor control without degradation, verified per AEC-Q101.
R_thJC	3.1 °C/W - Enables direct thermal coupling to PCB copper or metal-core substrates for efficient heat extraction.
Q_g	34 nC (typ.) - Reduces gate drive power and switching losses in 100–500 kHz DC–DC applications.

Pinout & Package

Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed drain copper on bottom side for enhanced thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source connection; pins 1/2/3/4/7/8 are internally bonded and electrically tied to source potential.
5	Gate (G)	Control terminal; requires < ±20 V rating and low-inductance layout to minimize ringing during fast switching.
6	Drain (D)	Main power output node; connected to exposed bottom copper pad for thermal and electrical path to PCB ground plane.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood environments including temperature cycling, HTRB, and UIS stress per JESD22-A108 and A112.
TrenchFET® architecture	Delivers 20 % lower R_DS(on) vs. planar MOSFETs at same die size, enabling higher power density in space-constrained ECUs.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness-no latent field failures.
PowerPAK SO-8L thermal design	Bottom-exposed drain pad reduces R_thJC to 3.1 °C/W, allowing >40 W dissipation with minimal PCB copper area.
Body diode t_rr = 29 ns (typ.)	Minimizes reverse recovery loss in synchronous buck converters, improving efficiency by ~0.5 % at 200 kHz.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Electric Power Steering (EPS) Motor Phase Switch
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 50 A and PWM frequencies up to 2 kHz. IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization/de-energization with precise timing and minimal voltage drop. Use Value: 6.0 mΩ R_DS(on) limits voltage drop to < 300 mV at 50 A, preserving injector solenoid force and enabling faster valve response.	Use Scenario: Half-bridge phase leg in 12 V EPS motor driver handling bidirectional 40 A peak currents and regenerative braking energy. IC Role / Device Role / Timing Role: N-channel high- and low-side switch in three-phase inverter, requiring fast turn-off and low Q_gd/Q_g ratio for clean commutation. Use Value: Q_gd/Q_g = 7/34 ≈ 0.21 ensures low Miller-induced shoot-through risk and enables < 50 ns fall time at 10 A load.
Automotive DC–DC Converter (12 V → 5 V/3.3 V)	On-Board Charger (OBC) Auxiliary Power Supply
Use Scenario: Primary-side synchronous rectifier in isolated flyback or active clamp forward converter powering infotainment and ADAS sensors. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: Body diode V_SD = 0.8 V (typ.) and t_rr = 29 ns enable >92 % efficiency at 5 A output, exceeding legacy diode solutions by 3–4 %.	Use Scenario: Auxiliary 12 V supply stage in 400 V OBC converting battery voltage to power control logic, fans, and communication interfaces. IC Role / Device Role / Timing Role: High-current buck switch operating at 300–500 kHz with tight thermal constraints due to proximity to main IGBT module. Use Value: R_thJC = 3.1 °C/W allows 30 W continuous dissipation with only 93 °C junction rise above 85 °C board temperature-within 175 °C limit.

Engine Control Unit (ECU) Fuel Injector Driver

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 50 A and PWM frequencies up to 2 kHz.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization/de-energization with precise timing and minimal voltage drop.

Use Value: 6.0 mΩ R_DS(on) limits voltage drop to < 300 mV at 50 A, preserving injector solenoid force and enabling faster valve response.

Use Scenario: Half-bridge phase leg in 12 V EPS motor driver handling bidirectional 40 A peak currents and regenerative braking energy.

IC Role / Device Role / Timing Role: N-channel high- and low-side switch in three-phase inverter, requiring fast turn-off and low Q_gd/Q_g ratio for clean commutation.

Use Value: Q_gd/Q_g = 7/34 ≈ 0.21 ensures low Miller-induced shoot-through risk and enables < 50 ns fall time at 10 A load.

Automotive DC–DC Converter (12 V → 5 V/3.3 V)

On-Board Charger (OBC) Auxiliary Power Supply

Use Scenario: Primary-side synchronous rectifier in isolated flyback or active clamp forward converter powering infotainment and ADAS sensors.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: Body diode V_SD = 0.8 V (typ.) and t_rr = 29 ns enable >92 % efficiency at 5 A output, exceeding legacy diode solutions by 3–4 %.

Use Scenario: Auxiliary 12 V supply stage in 400 V OBC converting battery voltage to power control logic, fans, and communication interfaces.

IC Role / Device Role / Timing Role: High-current buck switch operating at 300–500 kHz with tight thermal constraints due to proximity to main IGBT module.

Use Value: R_thJC = 3.1 °C/W allows 30 W continuous dissipation with only 93 °C junction rise above 85 °C board temperature-within 175 °C limit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 3.7 mΩ @ 10 V (lower), but 5x higher C_iss (10,200 pF vs. 2020 pF) and no AEC-Q101 documentation in public datasheet.	Better conduction loss but slower switching; suited for lower-frequency (< 100 kHz), high-current linear regulation-not ideal for high-frequency DC–DC.	Select STL220N4F7AG only when ultra-low R_DS(on) dominates over switching loss and AEC-Q101 compliance is not mandated.
IRFH5020TRPBF	Same PowerPAK SO-8L package, R_DS(on) = 5.2 mΩ @ 10 V, but rated only to 150 °C TJ and lacks 100 % UIS test documentation.	Higher thermal margin at 150 °C but insufficient for underhood locations requiring 175 °C operation (e.g., transmission control units).	IRFH5020TRPBF may be used in cabin-mounted modules, but SQJ860EP-T1_BE3 remains preferred for engine bay or transmission-integrated designs.

Compared with STL220N4F7AG and IRFH5020TRPBF, SQJ860EP-T1_BE3 uniquely balances AEC-Q101 qualification, 175 °C operation, low Q_g, and proven UIS robustness-making it the optimal choice for safety-critical, thermally aggressive automotive power stages where reliability and validated stress testing are non-negotiable.

Availability

SQJ860EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC–DC converters requiring stable component supply across extended production lifecycles.

Supply support for SQJ860EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJ860EP-T1_BE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK SO-8L family, engineered specifically for high-current, high-temperature switching in engine management, chassis, and electrification subsystems.

FAQ

What is the maximum continuous drain current rating for SQJ860EP-T1_BE3 at 125 °C case temperature?

The SQJ860EP-T1_BE3 supports 36 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and must be applied in thermal design calculations for sustained operation in high-ambient environments like engine compartments.

Is SQJ860EP-T1_BE3 suitable for synchronous rectification in automotive DC–DC converters?

Yes, SQJ860EP-T1_BE3 is well-suited for synchronous rectification due to its low R_DS(on) (6.0 mΩ @ 10 V), fast body diode (t_rr = 29 ns typ.), and low Q_gd/Q_g ratio. Its 175 °C rating and AEC-Q101 qualification ensure reliability in the thermally demanding auxiliary power supplies of modern vehicles.

Does SQJ860EP-T1_BE3 have a guaranteed gate threshold voltage range?

Yes, SQJ860EP-T1_BE3 has a guaranteed V_GS(th) range of 1.5 V to 2.5 V at T_J = 25 °C and I_D = 250 μA. This tight distribution ensures consistent turn-on behavior across temperature and process variation, critical for predictable timing in safety-related automotive functions.

What is the thermal resistance from junction to case (R_thJC) for SQJ860EP-T1_BE3?

The SQJ860EP-T1_BE3 has a maximum R_thJC of 3.1 °C/W, measured from junction to the drain pad (case). This value is confirmed in the Thermal Resistance Ratings section and enables accurate junction temperature estimation when mounted on thermally optimized PCB layouts with adequate copper area beneath the exposed drain.

Can SQJ860EP-T1_BE3 replace older SO-8 packaged MOSFETs without PCB redesign?

No-SQJ860EP-T1_BE3 uses the leadless PowerPAK SO-8L package, which has different pad layout, soldering profile, and thermal interface requirements versus traditional gull-wing SO-8. Direct replacement requires updated footprint, stencil design, and reflow profile per Vishay document 63818; manual rework is not recommended.

SQJ860EP-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8 Dual

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8 Dual

SQJ860EP-T1_BE3 FAQ

1.How can I place an order for SQJ860EP-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ860EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ860EP-T1_BE3 reliable?

The price and inventory of SQJ860EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ860EP-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQJ860EP-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ860EP-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ860EP-T1_BE3?

SQJ860EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ860EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ860EP-T1_BE3?

For technical support, including SQJ860EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ860EP-T1_BE3 requirements.

6.How does Aetrix verify that SQJ860EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQJ860EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ860EP-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQJ860EP-T1_BE3?

All SQJ860EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ860EP-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ860EP-T1_BE3 part is unused and in its original packaging.

Return procedure for SQJ860EP-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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