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Vishay Siliconix SQJ860EP-T1_GE3
- Part No.:
- SQJ860EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ860EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:14,730
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Product details
Overview
SQJ860EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 60 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It features RDS(on) of 6.0 mΩ at VGS = 10 V and 7.3 mΩ at VGS = 4.5 V, and is AEC-Q101 qualified for under-hood power switching in DC-DC converters and motor control modules.
For engineers reviewing the SQJ860EP-T1_GE3 datasheet, SQJ860EP-T1_GE3 pinout, SQJ860EP-T1_GE3 application, or SQJ860EP-T1_GE3 equivalent, key selection criteria include its PowerPAK® SO-8L leadless package, 100 % Rg and UIS tested reliability, thermal resistance RthJC = 3.1 °C/W, and body diode recovery characteristics (trr = 29–60 ns, Qrr = 27–60 nC).
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current automotive power stages. Its gate charge profile (Qg = 34–55 nC, Qgs = 6 nC, Qgd = 7 nC) supports efficient PWM operation with controlled dv/dt and reduced EMI in 12 V/48 V systems.
The device integrates a robust intrinsic body diode with VSD = 0.8–1.2 V at IF = 10 A and reverse recovery parameters validated for synchronous rectification and freewheeling. Thermal design is enabled by its low RthJC (3.1 °C/W) and RthJA (70 °C/W on 1"² FR4 PCB), supporting high-power density layouts without external heatsinking in many applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage compatible with 36 V automotive battery transients. |
| RDS(on) @ 10 V | 6.0 mΩ - Enables <1 W conduction loss at 40 A, critical for thermally constrained engine bay modules. |
| ID (TC = 25 °C) | 60 A - Continuous current rating enabling single-device solutions for 500 W–1 kW power stages. |
| TJ max | +175 °C - Supports operation in under-hood environments exceeding 125 °C ambient. |
| AEC-Q101 | Qualified - Validated for automotive reliability including HTOL, UHAST, and temperature cycling per AEC standard. |
| Qg / Qgd | 34–55 nC / 7 nC - Low gate-drain charge minimizes Miller-induced shoot-through risk in half-bridge configurations. |
| trr / Qrr | 29–60 ns / 27–60 nC - Body diode recovery performance suitable for synchronous buck and active clamp topologies. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), exposed copper drain pad on bottom side for enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source terminals tied internally; provide low-inductance return path and thermal conduction to PCB ground plane. |
| 5 | Gate (G) | Single gate input; requires <4.5 Ω series resistance to damp ringing due to Rg = 1.3–4.5 Ω (typical 2.7 Ω). |
| 6 | Drain (D) | Main power output terminal; connected to large-area bottom-side copper pad for primary heat dissipation and current routing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lowest RDS(on) × Qg figure-of-merit in its 40 V class, reducing total switching + conduction losses. |
| 100 % Rg and UIS tested | Ensures gate robustness against overvoltage and avalanche energy handling (EAS = 51 mJ) without derating. |
| PowerPAK SO-8L package | Reduces thermal resistance by 40 % vs. standard SO-8; enables >2× higher current density in same footprint. |
| AEC-Q101 qualification | Covers full stress test suite including -55 °C to +175 °C temperature cycling and 1000-hour HTOL at 175 °C. |
| Low Crss / Ciss ratio | Crss = 110–150 pF, Ciss = 2020–2700 pF → 5.5 % feedback capacitance improves gate drive stability in high-side switching. |
Applications
| Automotive DC-DC Converters | Electric Power Steering (EPS) Motor Drivers |
|---|---|
Use Scenario: 12 V to 5 V/3.3 V buck converter supplying ADAS sensors and microcontrollers in engine compartment. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 200–500 kHz PWM frequency. Use Value: 6.0 mΩ RDS(on) limits conduction loss to <1 W at 40 A load, while 175 °C TJ rating ensures reliability at 105 °C ambient. |
Use Scenario: H-bridge phase-leg switch controlling 3-phase BLDC motor in column-assist EPS system. IC Role / Device Role / Timing Role: Low-side power switch with fast turn-off (tf = 5–10 ns) to minimize dead-time losses. Use Value: Body diode trr = 29–60 ns and Qrr = 27–60 nC reduce cross-conduction and switching loss during freewheeling. |
| 48 V Mild Hybrid Battery Management | On-Board Charger (OBC) Input Stage |
Use Scenario: Bidirectional 48 V/12 V DC-DC converter enabling regenerative braking energy transfer. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous rectification stage. Use Value: VGS(th) = 1.5–2.5 V ensures clean turn-on with 4.5 V gate drive; RDS(on) drift <25 % up to 175 °C maintains efficiency. |
Use Scenario: Active clamp switch in OBC PFC front-end handling 3.3 kW AC–DC conversion. IC Role / Device Role / Timing Role: Clamping MOSFET absorbing leakage inductance energy during flyback transitions. Use Value: UIS-tested 32 A single-pulse avalanche current and 51 mJ EAS withstand repeated clamp events without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL8721PBF | RDS(on) = 6.2 mΩ @ 10 V; TO-220AB package; no AEC-Q101 qualification; RthJC = 2.5 °C/W. | Requires heatsink mounting; not approved for automotive safety-critical systems. | Preferred for industrial non-automotive 40 V switching where cost > qualification priority. |
| STL220N4F7AG | RDS(on) = 3.7 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; RthJC = 2.0 °C/W. | Higher current capability but larger footprint (5.0 mm × 6.0 mm); lower VGS(th) (1.0–2.0 V) increases risk of spurious turn-on. | Selected when <4 mΩ RDS(on) justifies added layout area and tighter gate drive control requirements. |
Compared with IRL8721PBF, SQJ860EP-T1_GE3 offers automotive qualification and superior thermal performance in a smaller leadless package; compared with STL220N4F7AG, it trades 2.3 mΩ higher RDS(on) for more robust gate threshold and proven field reliability in engine-bay deployments.
Availability
SQJ860EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and 48 V mild hybrid systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SQJ860EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency performance.
The SQJ860EP-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK SO-8L family, engineered specifically for high-current, high-temperature switching in engine control units, ADAS power supplies, and electrified vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ860EP-T1_GE3 at 125 °C case temperature?
The SQJ860EP-T1_GE3 supports 36 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within its 175 °C maximum junction temperature limit. The SQJ860EP-T1_GE3 maintains stable RDS(on) performance across this range, with typical values rising to 9.9 mΩ at 125 °C and 12.2 mΩ at 175 °C junction temperature.
Is SQJ860EP-T1_GE3 suitable for synchronous rectification in a 400 kHz automotive buck converter?
Yes, SQJ860EP-T1_GE3 is well-suited for synchronous rectification at 400 kHz due to its low Qg (34–55 nC), fast switching times (td(on) = 10–20 ns, tf = 5–10 ns), and low Crss/Ciss ratio (≈5.5 %), which minimizes Miller effect and gate drive complexity. Its 6.0 mΩ RDS(on) at 10 V ensures minimal conduction loss, and the AEC-Q101 qualification guarantees reliability under automotive thermal and vibration stress. The SQJ860EP-T1_GE3 body diode recovery (trr = 29–60 ns) further reduces switching loss during dead-time intervals.
Does SQJ860EP-T1_GE3 require special rework considerations due to its PowerPAK SO-8L package?
Yes, SQJ860EP-T1_GE3 uses a leadless PowerPAK SO-8L package with exposed copper drain pads on the bottom side, making manual soldering with an iron unsuitable. Rework must use precision hot-air stations with profiled temperature ramping (peak ≤ 260 °C) and controlled dwell time, per Vishay document 73257. The absence of gull-wing leads means visual solder joint inspection is not possible-X-ray or electrical continuity testing is recommended post-rework. The SQJ860EP-T1_GE3 datasheet explicitly warns against soldering iron use for this reason.
What is the gate-source leakage specification for SQJ860EP-T1_GE3 at ±20 V?
The SQJ860EP-T1_GE3 specifies gate-source leakage (IGSS) of ±100 nA maximum at VGS = ±20 V and TA = 25 °C, per its Electrical Specifications table. This low leakage supports stable gate bias in high-impedance drive circuits and contributes to low quiescent current in always-on automotive modules. The SQJ860EP-T1_GE3 maintains this specification across its full operating temperature range (-55 °C to +175 °C), with no degradation observed in AEC-Q101 stress testing.
How does the body diode forward voltage of SQJ860EP-T1_GE3 compare to standard silicon diodes in freewheeling applications?
The SQJ860EP-T1_GE3 body diode exhibits VSD = 0.8–1.2 V at IF = 10 A and VGS = 0 V, significantly lower than discrete 40 V Schottky diodes (typically 0.45–0.55 V) but optimized for integrated switching performance rather than ultra-low VF. Its advantage lies in tightly coupled diode-MOSFET timing (trr = 29–60 ns, Qrr = 27–60 nC), enabling predictable commutation in synchronous rectifiers and reducing voltage spikes versus external diodes. In freewheeling, the SQJ860EP-T1_GE3 body diode delivers consistent performance without parasitic inductance from bond wires or package leads.
SQJ860EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ860EP-T1_GE3 FAQ
1.How can I place an order for SQJ860EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ860EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ860EP-T1_GE3 reliable?
The price and inventory of SQJ860EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ860EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ860EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ860EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ860EP-T1_GE3?
SQJ860EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ860EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ860EP-T1_GE3?
For technical support, including SQJ860EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ860EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ860EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ860EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ860EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ860EP-T1_GE3?
All SQJ860EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ860EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ860EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ860EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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