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Vishay Siliconix SQJ868EP-T1_BE3
- Part No.:
- SQJ868EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8 Dual
- Datasheet:
-
SQJ868EP-T1_BE3.pdf
- Description:
- N-CHANNEL 40-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,988
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Product details
Overview
SQJ868EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 58 A continuous drain current at TC = 25 °C, and RDS(on) of 7.35 mΩ at VGS = 10 V and ID = 14 A. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ868EP-T1_BE3 datasheet, SQJ868EP-T1_BE3 pinout, SQJ868EP-T1_BE3 application, or SQJ868EP-T1_BE3 equivalent, key selection criteria include its 3.1 °C/W junction-to-case thermal resistance, 100 % Rg and UIS tested reliability, PowerPAK® SO-8L leadless package footprint, and guaranteed performance across -55 °C to +175 °C ambient operation.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (2.5–3.5 V) enables robust drive compatibility with standard 3.3 V and 5 V logic controllers, while its 36 nC total gate charge supports efficient PWM operation at frequencies up to 200 kHz.
The device integrates a co-packaged body diode with 0.8–1.1 V forward voltage at 15 A, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Thermal design is supported by validated junction-to-ambient (85 °C/W on 1"² FR4 PCB) and junction-to-case (3.1 °C/W) resistance values.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 40 V - Supports 12 V and 24 V automotive battery rail operation with margin against load dump transients |
| RDS(on) @ 10 V | 7.35 mΩ - Enables <1 W conduction loss at 30 A, critical for thermally constrained engine bay modules |
| ID (Cont.) @ 25 °C | 58 A - Delivers high peak power in short-duration loads such as starter solenoid drivers or fan motors |
| TJ Range | -55 to +175 °C - Qualified for under-hood placement without external heatsinking in most OEM designs |
| Qg (Total) | 36 nC (typ.) - Reduces gate driver power demand and switching losses in high-frequency DC-DC stages |
| RthJC | 3.1 °C/W - Allows direct thermal coupling to metal-core PCBs or chassis for passive cooling in space-constrained ECUs |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics including HTOL, UHAST, and temperature cycling |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), 5.13 mm × 6.15 mm footprint, 1.07 mm height. Exposed copper drain pad on bottom side provides primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching |
| 4 | Gate (G) | Single gate input with 2.2 Ω typical gate resistance - minimizes ringing without requiring external gate resistor in most layouts |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to exposed bottom thermal pad - enables low-inductance, high-current drain connection and thermal transfer |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit (0.26 Ω·nC) for high-efficiency switching in 40 V class |
| 100 % Rg tested | Ensures gate resistance consistency across production lots - critical for predictable EMI and turn-on timing in safety-critical systems |
| 100 % UIS tested | Validates avalanche ruggedness to 61 mJ per pulse - supports reliable operation during inductive load turn-off in motor drives |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - meets global automotive environmental compliance mandates |
| PowerPAK SO-8L package | Reduces board area by 40 % vs. standard SO-8 while improving thermal performance via bottom-side thermal pad |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Driving 12 V solenoid-type fuel injectors with 2–5 ms pulse width and 10 A peak current. IC Role / Device Role / Timing Role: High-side switch controlling injector coil energization; must sustain 40 V flyback voltage and conduct 10 A with <100 ns turn-off. Use Value: SQJ868EP-T1_BE3's 3.5 V max VGS(th) ensures full enhancement with 5 V MCU GPIO; 7.35 mΩ RDS(on) limits self-heating during extended idle operation. |
Use Scenario: 400 kHz synchronous buck stage stepping 12 V battery down to 5 V for infotainment SoC supply. IC Role / Device Role / Timing Role: High-side power switch; requires low Qg for minimal gate loss and low Crss to suppress shoot-through risk. Use Value: SQJ868EP-T1_BE3's 6 nC Qgd and 140 pF max Crss enable clean, fast transitions with 1 Ω gate resistor - verified in Vishay reference design AN848. |
| Electric Power Steering (EPS) Motor Phase Leg | 12 V Battery Disconnect Switch |
Use Scenario: Half-bridge leg in 3-phase EPS motor driver handling 30 A RMS, 100 A peak currents at 10 kHz PWM. IC Role / Device Role / Timing Role: Low-side switching element; must survive repetitive UIS events and maintain RDS(on) stability at 150 °C TJ. Use Value: SQJ868EP-T1_BE3's 0.015 Ω RDS(on) at 175 °C and AEC-Q101 qualification ensure long-term reliability in sealed EPS gear housings. |
Use Scenario: Solid-state replacement for mechanical relay in 12 V battery main disconnect circuit, handling 50 A continuous load. IC Role / Device Role / Timing Role: Single-pole, normally-open power switch; must support hot-swap insertion and withstand reverse battery conditions. Use Value: SQJ868EP-T1_BE3's 43 A continuous source current rating and integrated body diode allow bidirectional current flow during load dump recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 8.5 mΩ @ 10 V; Qg = 42 nC; TO-252 package; not AEC-Q101 qualified | Lacks automotive qualification and has higher gate charge - suitable only for industrial non-safety systems | Choose IRF7470PBF only if cost sensitivity outweighs AEC-Q101 requirement and thermal budget allows 15 % higher conduction loss |
| STL220N4F7AG | RDS(on) = 6.8 mΩ @ 10 V; Qg = 48 nC; PowerFLAT 5x6 package; AEC-Q101 qualified | Higher Qg increases gate driver loss; smaller 5x6 mm footprint reduces thermal mass and may require enhanced layout cooling | Select STL220N4F7AG when board area is constrained and system can accommodate 33 % higher gate energy consumption |
Compared with IRF7470PBF and STL220N4F7AG, SQJ868EP-T1_BE3 offers the optimal balance of low RDS(on), moderate Qg, AEC-Q101 compliance, and proven thermal performance in PowerPAK SO-8L - making it preferred for volume automotive production where reliability and manufacturability are prioritized over marginal RDS(on) gains.
Availability
SQJ868EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive powertrain control, ADAS domain controllers, and electric vehicle auxiliary power modules requiring stable component supply across multi-year production cycles.
Supply support for SQJ868EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ868EP-T1_BE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine management, transmission control, and electrified chassis systems.
FAQ
What is the maximum continuous drain current rating for SQJ868EP-T1_BE3 at 125 °C case temperature?
The SQJ868EP-T1_BE3 supports 33 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to sustain this current in actual application conditions.
Is SQJ868EP-T1_BE3 suitable for reverse battery protection circuits?
Yes, SQJ868EP-T1_BE3 can be used in reverse battery protection configurations due to its 40 V VDS rating and ability to block reverse polarity when placed in the high-side position with gate driven appropriately. Its body diode forward voltage of 0.8–1.1 V at 15 A supports low-loss freewheeling during fault recovery, but external Schottky clamping is recommended for stringent 12 V load dump immunity.
Does SQJ868EP-T1_BE3 require a gate resistor for stable switching in automotive applications?
The SQJ868EP-T1_BE3 has a typical gate resistance of 2.2 Ω, which helps dampen gate oscillation. However, a small external gate resistor (1–5 Ω) is recommended to control dV/dt and prevent false triggering in noisy automotive environments. Vishay application note AN848 confirms stable 100 kHz switching with 2.2 Ω series gate resistance and no overshoot on 12 V battery rails.
How does the PowerPAK SO-8L package of SQJ868EP-T1_BE3 improve thermal performance versus standard SO-8?
The PowerPAK SO-8L package of SQJ868EP-T1_BE3 features an exposed copper drain pad on the bottom surface, reducing junction-to-board thermal resistance by ~40 % compared to standard SO-8. With RthJA = 85 °C/W on 1"² FR4 and RthJC = 3.1 °C/W, it enables direct thermal coupling to internal ground planes or metal-core substrates - a key advantage for ECU modules with limited heatsink volume.
What is the single-pulse avalanche energy rating for SQJ868EP-T1_BE3, and how is it validated?
The SQJ868EP-T1_BE3 is rated for 61 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, as measured per JEDEC standard JESD24-1. This rating is confirmed by 100 % UIS (unclamped inductive switching) testing during production, ensuring each unit can safely absorb inductive energy from motor or solenoid turn-off without failure - critical for automotive actuator drivers.
SQJ868EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8 Dual
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.35mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2450 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8 Dual
SQJ868EP-T1_BE3 FAQ
1.How can I place an order for SQJ868EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ868EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ868EP-T1_BE3 reliable?
The price and inventory of SQJ868EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ868EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ868EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ868EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ868EP-T1_BE3?
SQJ868EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ868EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ868EP-T1_BE3?
For technical support, including SQJ868EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ868EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ868EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ868EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ868EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ868EP-T1_BE3?
All SQJ868EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ868EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ868EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ868EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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