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Vishay Siliconix SQJ886EP-T1_BE3
- Part No.:
- SQJ886EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ886EP-T1_BE3.pdf
- Description:
- N-CHANNEL 40-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,553
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Product details
Overview
SQJ886EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 60 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It delivers RDS(on) of 4.5 mΩ at VGS = 10 V and 5.5 mΩ at VGS = 4.5 V in a PowerPAK® SO-8L package, targeting high-efficiency DC–DC converters and motor control stages in engine management and body electronics.
For engineers reviewing the SQJ886EP-T1_BE3 datasheet, SQJ886EP-T1_BE3 pinout, SQJ886EP-T1_BE3 application, or SQJ886EP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS testing, low gate charge (43 nC typ.), and thermal performance with RthJC = 2.7 °C/W - all critical for automotive power switching reliability under transient load and thermal stress.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in synchronous rectification and high-side/low-side switching topologies. Its gate threshold voltage (VGS(th) = 1.5–2.5 V) enables robust drive compatibility with 3.3 V and 5 V logic controllers, while the 2338 pF input capacitance (Ciss) and 147 pF reverse transfer capacitance (Crss) support fast, controlled turn-on/turn-off transitions.
The device features integrated source-drain diode with VF = 0.8–1.2 V at IF = 10.1 A and ISM = 240 A pulsed rating, enabling freewheeling operation without external diodes in H-bridge or buck converter designs. Its 64 mJ single-pulse avalanche energy (EAS) and 36 A IAS rating provide validated ruggedness against inductive switching transients in automotive solenoid and pump drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 40 V - Supports 12 V and 24 V automotive battery rail systems with margin for load dump transients. |
| RDS(on) @ 10 V | 4.5 mΩ - Enables ≤ 1.4 W conduction loss at 60 A, reducing thermal design burden in compact modules. |
| ID (Cont.) @ 25 °C | 60 A - Sustains peak motor startup or solenoid pull-in currents without derating in PCB-mounted applications. |
| Qg (Total) | 43 nC (typ.) - Minimizes gate drive power and allows use of low-current drivers like UCC27531 or TC4427A. |
| TJ Range | −55 to +175 °C - Certified for under-hood placement in engine control units and transmission control modules. |
| AEC-Q101 | Qualified - Meets automotive stress test requirements for temperature cycling, HTRB, and ESD, ensuring field reliability. |
| RthJC | 2.7 °C/W - Enables direct thermal coupling to heatsink or copper pour, supporting >45 W power dissipation at TC = 125 °C. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (JEDEC MO-274 compliant). Exposed copper drain pad on bottom enables low-inductance, high-current routing and efficient heat transfer to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce package inductance and resistance; connected internally to source metallization and bottom thermal pad. |
| 5 (G) | Gate | Single gate input with 2.45 Ω typical gate resistance - limits dV/dt-induced shoot-through and simplifies RC snubber design. |
| 6, 7, 8 (D) | Drain | Three drain terminals tied to exposed bottom copper pad - carries full ID current path and serves as primary thermal interface. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables ultra-low RDS(on) and high cell density in small footprint - critical for space-constrained ADAS and infotainment power supplies. |
| 100 % Rg and UIS tested | Each unit verified for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from parasitic oscillation or avalanche overstress. |
| PowerPAK SO-8L thermal design | Bottom-exposed drain pad achieves 2.7 °C/W junction-to-case resistance - supports >50 W steady-state dissipation when mounted on 2 oz. copper PCB. |
| Low Crss (147 pF) | Reduces Miller-induced turn-off delay and improves immunity to cross-conduction in half-bridge configurations. |
| VGS(th) stability over temperature | Threshold variance < ±0.4 V from −55 to +175 °C - ensures consistent turn-on behavior across automotive ambient extremes. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
|
Use Scenario: High-speed switching of 12 V fuel injectors with 2–5 ms pulse width and up to 10 A peak current. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization and demagnetization via controlled freewheeling. Use Value: 5.5 mΩ RDS(on) at 4.5 V gate drive ensures < 0.5 W loss during injection pulses; 240 A pulsed current rating handles coil flyback energy safely. |
Use Scenario: PWM-controlled 24 V blower motor delivering 15–30 A continuous airflow in cabin climate systems. IC Role / Device Role / Timing Role: High-current half-bridge low-side switch enabling variable speed control with < 1 μs dead-time tolerance. Use Value: 43 nC Qg and 147 pF Crss allow clean 20 kHz PWM switching with minimal gate drive overhead and reduced EMI generation. |
| 12 V–48 V Mild Hybrid DC–DC Converter | Electric Power Steering (EPS) Assist Motor Driver |
|
Use Scenario: Synchronous rectifier in bidirectional buck-boost stage converting between 12 V starter battery and 48 V Li-ion auxiliary bus. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 200–500 kHz with zero-voltage switching (ZVS) assist. Use Value: 2338 pF Ciss and 356 pF Coss enable precise timing control for ZVS transition; 64 mJ EAS withstands reverse recovery spikes during mode change. |
Use Scenario: Three-phase inverter leg driving 300–500 W assist motor in rack-and-pinion EPS systems. IC Role / Device Role / Timing Role: Low-side phase switch handling 40 A RMS current with short-circuit fault tolerance. Use Value: AEC-Q101 qualification and 175 °C TJ rating ensure uninterrupted operation during sustained torque assist; 36 A IAS rating protects against motor lock-up faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A ID, 0.95 mΩ RDS(on) @ 10 V, PowerFLAT 5×6 package, RthJC = 1.2 °C/W | Higher current capability but larger footprint and higher gate charge (120 nC); requires stronger gate driver. | Select when system demands >100 A peak current and board space permits larger thermal pad area. |
| IRL8721PBF | 30 V, 71 A ID, 4.5 mΩ RDS(on) @ 4.5 V, TO-220AB package, RthJC = 1.5 °C/W, not AEC-Q101 qualified | Limited to 30 V systems; lacks automotive qualification and has higher thermal resistance in surface-mount layout. | Consider only for non-automotive industrial 24 V motor drives where AEC-Q101 is not required. |
Compared with STL220N4F7AG and IRL8721PBF, the SQJ886EP-T1_BE3 offers optimal balance of automotive qualification, compact PowerPAK SO-8L form factor, and 60 A/40 V capability - making it preferred for space- and reliability-constrained ECU, EPS, and HVAC modules where PCB real estate and thermal management are tightly coupled.
Availability
SQJ886EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and HVAC blower motor controllers requiring stable component supply across extended automotive production lifecycles.
Supply support for SQJ886EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ886EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in safety-critical vehicle subsystems where AEC-Q101 compliance and parametric stability are mandatory.
FAQ
What is the maximum continuous drain current rating for SQJ886EP-T1_BE3 at 125 °C case temperature?
The SQJ886EP-T1_BE3 supports 45 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and must be applied in thermal simulations using RthJC = 2.7 °C/W to ensure junction temperature remains ≤175 °C under actual operating conditions. The SQJ886EP-T1_BE3 maintains RDS(on) stability up to this temperature, with 7.2 mΩ max at TJ = 125 °C and VGS = 10 V.
Is SQJ886EP-T1_BE3 qualified to AEC-Q101, and what does that qualification cover?
Yes, SQJ886EP-T1_BE3 is AEC-Q101 qualified per the Vishay datasheet revision B. This qualification covers stress tests including high-temperature reverse bias (HTRB), temperature cycling (TC), highly accelerated stress test (HAST), and unclamped inductive switching (UIS), confirming reliability for automotive under-hood applications. The SQJ886EP-T1_BE3 also undergoes 100 % Rg and UIS screening per unit, exceeding baseline AEC-Q101 requirements.
What is the gate threshold voltage range for SQJ886EP-T1_BE3, and how does it vary with temperature?
The SQJ886EP-T1_BE3 has a gate threshold voltage (VGS(th)) range of 1.5 V to 2.5 V at TC = 25 °C and ID = 250 μA. As shown in the Typical Characteristics graph on page 4, VGS(th) decreases by approximately 0.4 V across the full −55 °C to +175 °C junction temperature range, maintaining predictable turn-on behavior. This stability ensures reliable operation with standard 3.3 V or 5 V microcontroller GPIOs across automotive ambient extremes. The SQJ886EP-T1_BE3 exhibits no latch-up or hysteresis within this range.
Can SQJ886EP-T1_BE3 be used in synchronous rectification applications, and what parameters support that use?
Yes, SQJ886EP-T1_BE3 is suitable for synchronous rectification in DC–DC converters due to its low RDS(on) (4.5 mΩ @ 10 V), fast switching (td(on) = 8 ns typ., tf = 6 ns typ.), and low Crss (147 pF), which minimizes Miller-induced turn-off delay. Its integrated source-drain diode has VF = 0.8–1.2 V at 10.1 A, enabling efficient freewheeling. The SQJ886EP-T1_BE3 also provides 64 mJ EAS to absorb reverse recovery energy during hard-switched transitions - critical for reliability in buck and LLC topologies.
What is the recommended PCB pad layout for SQJ886EP-T1_BE3 in PowerPAK SO-8L package?
Vishay specifies a recommended minimum pad pattern for the PowerPAK SO-8L in document 63818: 5.00 mm × 4.06 mm thermal pad for the drain, with 0.51 mm wide source/gate traces and 0.595 mm spacing between pads. A 2 oz. copper ground plane beneath the drain pad is essential to achieve the rated RthJC = 2.7 °C/W. The SQJ886EP-T1_BE3 requires reflow soldering per JEDEC J-STD-020 profile (peak 260 °C); manual iron soldering is not recommended due to the leadless construction and exposed copper terminations.
SQJ886EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 15.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2922 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 55W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ886EP-T1_BE3 FAQ
1.How can I place an order for SQJ886EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ886EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ886EP-T1_BE3 reliable?
The price and inventory of SQJ886EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ886EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ886EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ886EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ886EP-T1_BE3?
SQJ886EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ886EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ886EP-T1_BE3?
For technical support, including SQJ886EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ886EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ886EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ886EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ886EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ886EP-T1_BE3?
All SQJ886EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ886EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ886EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ886EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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