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Vishay Siliconix SQJ886EP-T1_GE3
- Part No.:
- SQJ886EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ886EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,801
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Product details
Overview
SQJ886EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 60 A continuous drain current at 25 °C, and 0.0045 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ886EP-T1_GE3 datasheet, SQJ886EP-T1_GE3 pinout, SQJ886EP-T1_GE3 application, or SQJ886EP-T1_GE3 equivalent, key selection criteria include its 2.7 °C/W junction-to-case thermal resistance, 100 % Rg and UIS tested reliability, and PowerPAK® SO-8L leadless package optimized for high-current automotive PCB layouts.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance with fast switching performance: total gate charge is 43 nC (typ.) at VGS = 10 V, with turn-on delay of 8 ns and rise time of 17 ns under standard test conditions (VDD = 20 V, Rg = 1 Ω). Its gate threshold voltage is tightly specified at 1.5–2.5 V, enabling robust drive compatibility with 3.3 V and 5 V controllers.
The device integrates a body diode with 0.8–1.2 V forward voltage at 10.1 A, and supports single-pulse avalanche energy of 64 mJ. Thermal design is enabled by validated junction-to-ambient (70 °C/W) and junction-to-case (2.7 °C/W) resistance values, both measured per JEDEC standards on FR-4 PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage in high-side switch configurations without derating below 12 V automotive systems. |
| RDS(on) @ VGS = 10 V | 0.0045 Ω - Enables ≤ 41 W conduction loss at 60 A, critical for thermally constrained engine control units. |
| ID (continuous) | 60 A @ TC = 25 °C - Supports high-current loads such as radiator fan drivers and EPS assist motors. |
| Junction Temp Range | −55 to +175 °C - Validated operation across full automotive ambient range including under-hood hot zones. |
| Qg (total) | 43 nC (typ.) - Determines gate driver power requirement; enables efficient 100 kHz+ PWM in DC-DC stages. |
| RthJC | 2.7 °C/W - Allows direct heatsinking via exposed drain pad; enables >40 W dissipation with 100 °C ΔT. |
| AEC-Q101 Qualified | Yes - Certified for automotive use per stress test requirements including HTRB, HAST, and temperature cycling. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless), 5.13 mm × 6.15 mm footprint, with exposed copper drain pad on bottom side for thermal and electrical connection. Compliant with IPC-7351B SOIC-8 density "G" land pattern.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt switching. |
| 5 (G) | Gate | Single gate input with 1.25–5 Ω gate resistance; compatible with standard 3.3/5 V logic-level drivers. |
| 6, 7, 8 (D) | Drain | Three drain terminals connected to large exposed copper pad; primary thermal path and high-current return path. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Technology | Delivers lowest RDS(on) × Qg figure-of-merit in 40 V automotive MOSFET class for efficiency-critical converters. |
| 100 % Rg Tested | Ensures consistent gate drive timing and eliminates batch variation in switching speed and EMI behavior. |
| 100 % UIS Tested | Guarantees ruggedness against inductive load switching events (e.g., solenoid de-energization) without failure. |
| Exposed Drain Pad | Provides low-inductance, low-thermal-resistance path to PCB copper pour-critical for thermal management in compact modules. |
| Lead (Pb)-Free & Halogen-Free | Meets RoHS Directive 2011/65/EU and JEDEC JS709E material compliance requirements for automotive supply chains. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems with peak currents up to 50 A. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization/de-energization with <12 ns fall time to minimize dwell time error. Use Value: 0.0055 Ω RDS(on) at 4.5 V ensures minimal voltage drop during cold-cranking (6.5 V battery), preserving injector solenoid force. |
Use Scenario: Synchronous rectification in 48 V–12 V bidirectional buck-boost converter for regenerative braking energy recovery. IC Role / Device Role / Timing Role: High-side synchronous FET operating at 200 kHz with 43 nC Qg enabling low gate loss and ZVS capability. Use Value: 2.7 °C/W RthJC allows direct mounting to aluminum heatsink, sustaining 40 W dissipation at 175 °C junction temp during sustained boost mode. |
| Electric Power Steering (EPS) Motor Phase Leg | Automotive Battery Disconnect Switch |
|
Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverter, handling 60 A peak phase current with PWM commutation. IC Role / Device Role / Timing Role: N-channel MOSFET in high-side position with body diode reverse recovery managed by fast 9 ns fall time and low Crss (147 pF typ). Use Value: AEC-Q101 qualification and 175 °C rating ensure reliability during extended high-torque steering maneuvers at elevated under-hood temperatures. |
Use Scenario: Main isolation switch between 12 V battery and vehicle loads, activated during sleep mode or fault conditions. IC Role / Device Role / Timing Role: Single-pole, normally-open solid-state disconnect with 64 mJ single-pulse avalanche energy rating. Use Value: 100 % UIS testing guarantees survival during load dump transients (ISO 7637-2 Pulse 5a) without external TVS clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.0055 Ω @ 10 V; TO-252 package; no AEC-Q101 qualification; RthJC = 3.5 °C/W. | Limited to non-safety-critical industrial DC-DC; unsuitable for under-hood automotive due to package and qualification gap. | Select only for cost-sensitive non-automotive designs where AEC-Q101 and thermal performance are not required. |
| STL220N4F7AG | RDS(on) = 0.0038 Ω @ 10 V; PowerFLAT™ 5×6 package; AEC-Q101 qualified; RthJC = 2.5 °C/W. | Higher current capability (220 A pulsed); better RDS(on) but larger footprint (5 mm × 6 mm vs. 5.13 × 6.15 mm) and different pinout. | Preferred for new designs needing lower on-resistance and higher pulse current, provided layout revision is acceptable. |
Compared with IRF7470PBF and STL220N4F7AG, the SQJ886EP-T1_GE3 offers optimal balance of AEC-Q101 compliance, thermal performance (2.7 °C/W), and industry-standard PowerPAK SO-8L footprint-making it ideal for drop-in upgrades in existing automotive PCBs without redesign.
Availability
SQJ886EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering inverters, and battery disconnect systems requiring stable component supply across automotive production lifecycles.
Supply support for SQJ886EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ886EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in safety-critical vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ886EP-T1_GE3 at 125 °C case temperature?
The SQJ886EP-T1_GE3 supports 45 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures reliable operation in high-ambient environments such as engine compartments. The SQJ886EP-T1_GE3 maintains RDS(on) ≤ 0.0072 Ω at this condition when VGS = 10 V and ID = 15.3 A.
Is SQJ886EP-T1_GE3 suitable for synchronous rectification in a 48 V automotive DC-DC converter?
Yes, the SQJ886EP-T1_GE3 is well-suited for synchronous rectification in 48 V automotive DC-DC converters due to its low RDS(on) (0.0045 Ω @ 10 V), fast switching (tf = 6–9 ns), and AEC-Q101 qualification. Its 43 nC total gate charge enables efficient gate driving at typical converter frequencies (100–300 kHz), and the exposed drain pad facilitates thermal coupling to heatsinks-key for managing power loss in high-efficiency topologies using the SQJ886EP-T1_GE3.
Does SQJ886EP-T1_GE3 have a guaranteed gate threshold voltage range?
Yes, the SQJ886EP-T1_GE3 has a guaranteed gate threshold voltage range of 1.5 V to 2.5 V at TJ = 25 °C and ID = 250 μA, per the datasheet specifications. This tight VGS(th) distribution ensures consistent turn-on behavior across temperature and manufacturing lots, supporting robust interface with 3.3 V microcontrollers and reducing risk of shoot-through in half-bridge configurations using the SQJ886EP-T1_GE3.
What is the avalanche energy rating of SQJ886EP-T1_GE3, and how is it tested?
The SQJ886EP-T1_GE3 is rated for 64 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, verified per JEDEC JESD24-11. This rating is achieved through 100 % UIS (Unclamped Inductive Switching) testing on every production lot, ensuring each device can safely absorb inductive energy during fault events like motor stall or relay coil de-energization-critical for reliability in automotive applications using the SQJ886EP-T1_GE3.
Can SQJ886EP-T1_GE3 be reworked using manual soldering tools?
No, manual soldering with a soldering iron is not recommended for the SQJ886EP-T1_GE3 due to its PowerPAK SO-8L leadless package. Vishay explicitly advises against hand-soldering in the datasheet (note e), citing risk of insufficient solder joint formation on the exposed copper drain pad. Rework must use controlled-profile reflow equipment per JEDEC J-STD-020, and the SQJ886EP-T1_GE3 requires peak temperature ≤ 260 °C for ≤ 30 seconds.
SQJ886EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 15.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2922 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 55W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ886EP-T1_GE3 FAQ
1.How can I place an order for SQJ886EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ886EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ886EP-T1_GE3 reliable?
The price and inventory of SQJ886EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ886EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ886EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ886EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ886EP-T1_GE3?
SQJ886EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ886EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ886EP-T1_GE3?
For technical support, including SQJ886EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ886EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ886EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ886EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ886EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ886EP-T1_GE3?
All SQJ886EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ886EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ886EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ886EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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