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Vishay Siliconix SQJA02EP-T1_GE3
- Part No.:
- SQJA02EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA02EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 60V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,916
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Product details
Overview
SQJA02EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in PowerPAK SO-8L package, delivering RDS(on) = 4.8 mΩ at VGS = 10 V, 75 A continuous drain current at TC = 25 °C, and AEC-Q101 qualification for under-hood power switching in 12 V/48 V systems.
For engineers reviewing the SQJA02EP-T1_GE3 datasheet, SQJA02EP-T1_GE3 pinout, SQJA02EP-T1_GE3 application, or SQJA02EP-T1_GE3 equivalent, key selection criteria include its 175 °C junction rating, 100 % Rg and UIS testing, low gate charge (Qg = 51 nC typ), and thermal resistance RthJC = 2.2 °C/W for high-reliability motor control and DC-DC converter designs.
Technical Context
This TrenchFET® MOSFET uses silicon process optimization for low conduction loss and fast switching, with gate threshold voltage VGS(th) tightly specified at 2.5–3.5 V and body diode reverse recovery charge Qrr = 106–220 nC. Its dynamic parameters-including Ciss = 3550–4700 pF and tr = 5–10 ns-are characterized at VDS = 30 V, ID ≈ 5 A, enabling efficient operation in synchronous rectification and H-bridge topologies.
The device features a leadless PowerPAK SO-8L package with exposed drain copper on the bottom side, optimized for PCB thermal conduction. Absolute maximum ratings include VDS = 60 V, VGS = ±20 V, and single-pulse avalanche energy EAS = 88 mJ-supporting robust transient handling in automotive load-dump and inductive switching conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage for 12 V/48 V automotive bus protection |
| RDS(on) @ VGS = 10 V | 4.8 mΩ max - Enables <1 W conduction loss at 75 A, critical for high-current power stages |
| ID (continuous) | 75 A @ TC = 25 °C - Supports high-power motor drivers and starter-generator inverters |
| Qg | 51 nC typ - Reduces gate drive power and enables faster switching with standard drivers |
| RthJC | 2.2 °C/W - Allows direct heatsinking through PCB copper, improving thermal margin in compact layouts |
| TJ range | −55 to +175 °C - Qualified for under-hood environments including engine control units and battery management |
| AEC-Q101 | Qualified - Meets automotive stress test requirements for reliability in safety-critical systems |
Pinout & Package
PowerPAK SO-8L is a leadless surface-mount package with dimensions 6.15 mm × 5.13 mm × 1.07 mm (L × W × H), featuring an exposed drain pad on the bottom for enhanced thermal performance. The top-side terminals are arranged in single-row configuration with three source pins (pins 1, 2, 3), one gate (pin 4), and four drain connections (pins 5–8) tied internally to the exposed pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (S) | Source | Three parallel source terminals reduce package inductance and improve current sharing in high-di/dt applications |
| 4 (G) | Gate | Single gate input with Rg = 0.41 Ω typ-enables stable turn-on without external gate resistor in many cases |
| 5–8 (D) + Bottom Pad | Drain | Four top-side drain terminals plus large exposed copper drain pad maximize thermal path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers ultra-low RDS(on) × area ratio-reducing board space and conduction losses in space-constrained modules |
| 100 % Rg and UIS tested | Ensures gate robustness and avalanche survivability per unit, eliminating field failures due to unclamped inductive switching |
| Body diode Qrr = 106–220 nC | Minimizes reverse recovery loss and EMI in synchronous rectifier and freewheeling configurations |
| Exposed drain thermal pad | Enables <2.2 °C/W junction-to-case thermal resistance-critical for maintaining TJ < 175 °C in sealed enclosures |
| Leadless PowerPAK SO-8L | Eliminates gull-wing leads-reducing solder joint fatigue risk and improving mechanical reliability in vibration-prone automotive environments |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-current H-bridge driver controlling brushless motor torque in steering assist systems. IC Role / Device Role / Timing Role: Main power switch in dual-phase half-bridge configuration, operating at 20–50 kHz PWM frequency. Use Value: Low RDS(on) and fast switching minimize heat generation during sustained assist events; AEC-Q101 ensures functional safety compliance. | Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 12 V and 48 V domains. IC Role / Device Role / Timing Role: High-side and low-side switch handling up to 150 A peak current with tight dead-time control. Use Value: Low Qg and Qrr reduce switching loss and voltage overshoot, improving efficiency above 95 % at full load. |
| Onboard Charger (OBC) Input Stage | Engine Control Unit (ECU) Load Switch |
Use Scenario: AC-DC front-end PFC switch in 6.6 kW OBC for BEVs, operating in continuous conduction mode. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in boost topology, driven by dedicated gate driver IC. Use Value: 175 °C TJ rating allows operation in thermally dense OBC modules without derating; RthJC = 2.2 °C/W supports passive cooling. | Use Scenario: High-side load switch isolating 12 V battery supply from ECU subsystems during sleep mode. IC Role / Device Role / Timing Role: Protected power switch with integrated overcurrent and thermal shutdown response. Use Value: AEC-Q101 qualification and −55 °C start-up capability ensure cold-cranking reliability; low leakage (<1 μA) preserves battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF100P217PBF | RDS(on) = 2.1 mΩ @ 10 V but in TO-220FP package; higher RthJA (62 °C/W) limits PCB-only cooling | Requires heatsink mounting; unsuitable for ultra-thin modules where PowerPAK SO-8L fits | Choose when discrete heatsinking is available and lower RDS(on) outweighs package size constraints |
| STL220N6F7AG | Same PowerPAK SO-8L package, RDS(on) = 2.2 mΩ, but only AEC-Q100 qualified-not validated for 175 °C operation | Limited to TJ ≤ 150 °C; not approved for under-hood locations exceeding 150 °C ambient | Prefer for cabin-mounted systems where junction temperature stays below 150 °C and tighter RDS(on) is prioritized |
Compared with IRF100P217PBF and STL220N6F7AG, SQJA02EP-T1_GE3 uniquely balances ultra-low thermal resistance, 175 °C capability, and AEC-Q101 validation in a compact leadless package-making it optimal for thermally constrained, high-reliability automotive power stages where both size and temperature margin are critical.
Availability
SQJA02EP-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid converters, and onboard charger designs requiring stable component supply across multi-year automotive production cycles.
Supply support for SQJA02EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA02EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation vehicle electrification systems-including 48 V architectures and ADAS power domains.
FAQ
What is the maximum continuous drain current rating for SQJA02EP-T1_GE3 at 125 °C case temperature?
The SQJA02EP-T1_GE3 supports 50 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within the 175 °C maximum junction temperature. At higher ambient or board temperatures, design margins must account for RthJC = 2.2 °C/W and PCB copper area.
Does SQJA02EP-T1_GE3 have a built-in body diode, and what are its key characteristics?
Yes, SQJA02EP-T1_GE3 integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key specifications include forward voltage VSD = 0.8–1.2 V at IF = 10 A and VGS = 0 V, reverse recovery time trr = 64–130 ns, and reverse recovery charge Qrr = 106–220 nC. These values are measured under standardized conditions (IF = 10 A, di/dt = 100 A/μs) and impact freewheeling efficiency in bridge circuits.
Is SQJA02EP-T1_GE3 compatible with lead-free reflow soldering processes?
Yes, SQJA02EP-T1_GE3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak soldering temperature up to 260 °C. The PowerPAK SO-8L package uses matte tin terminations and is designed for standard Pb-free profiles. However, manual soldering with an iron is not recommended due to thermal mass and leadless construction-reflow is the only supported assembly method.
How does the gate threshold voltage VGS(th) of SQJA02EP-T1_GE3 affect drive circuit design?
SQJA02EP-T1_GE3 has a VGS(th) range of 2.5–3.5 V at ID = 250 μA, ensuring reliable turn-on with standard 3.3 V or 5 V logic-level drivers. However, full enhancement requires VGS ≥ 10 V to achieve rated RDS(on) = 4.8 mΩ. Drive circuits must supply sufficient gate voltage and current (Qg = 51 nC typ) to minimize switching losses-especially in high-frequency applications like DC-DC converters.
What is the significance of the "T1_GE3" suffix in SQJA02EP-T1_GE3?
The "T1_GE3" suffix denotes Vishay's tape-and-reel packaging variant: T1 indicates 13-inch reel, and GE3 specifies the RoHS-compliant, halogen-free, green-epoxy molding compound per Vishay specification. This marking confirms compliance with automotive environmental standards and ensures traceability for production lots used in OEM supply chains.
SQJA02EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA02EP-T1_GE3 FAQ
1.How can I place an order for SQJA02EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA02EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA02EP-T1_GE3 reliable?
The price and inventory of SQJA02EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA02EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA02EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA02EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA02EP-T1_GE3?
SQJA02EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA02EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA02EP-T1_GE3?
For technical support, including SQJA02EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA02EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA02EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA02EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA02EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA02EP-T1_GE3?
All SQJA02EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA02EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA02EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA02EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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