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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJA04EP-T1_BE3

Name: SQJA04EP-T1_BE3
Brand: Vishay Siliconix
SKU: SQJA04EP-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJA04EP-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJA04EP-T1_BE3.pdf

Description:: N-CHANNEL 60-V (D-S) 175C MOSFET

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Product details

Overview

SQJA04EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in PowerPAK® SO-8L package, delivering R_DS(on) = 6.2 mΩ at V_GS = 10 V, 75 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification for under-hood power switching in 12 V/48 V systems.

For engineers reviewing the SQJA04EP-T1_BE3 datasheet, SQJA04EP-T1_BE3 pinout, SQJA04EP-T1_BE3 application, or SQJA04EP-T1_BE3 equivalent, this device is selected for high-current DC-DC phase legs, battery disconnect switches, and motor drive half-bridges where low conduction loss, 175 °C junction rating, and robust avalanche energy (E_AS = 61 mJ) are critical.

Technical Context

This MOSFET uses Vishay's TrenchFET® process to achieve low R_DS(on) while maintaining tight gate threshold voltage (V_GS(th) = 2.5–3.5 V) and low gate charge (Q_g = 35–55 nC). Its 100 % R_g and UIS testing ensures reliability in automotive transients.

The PowerPAK SO-8L leadless package provides enhanced thermal performance with R_thJC = 2.2 °C/W and supports high-density PCB layouts. The integrated body diode exhibits t_rr = 56–120 ns and Q_rr = 86–180 nC, enabling efficient synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V/48 V automotive bus protection and switching
R_DS(on) @ V_GS = 10 V	6.2 mΩ - Enables ≤ 4.7 W conduction loss at 75 A, reducing heatsink requirements
I_D (continuous)	75 A @ T_C = 25 °C - Supports high-power load switching without derating in forced-air or heatsinked designs
E_AS	61 mJ - Withstands repetitive inductive switching surges in motor control and solenoid drivers
T_J range	−55 to +175 °C - Qualified for under-hood environments including engine control units and ADAS power stages
Q_g	35–55 nC - Enables fast turn-on with moderate gate driver strength (e.g., 1–2 A peak)
AEC-Q101	Qualified - Meets stress test requirements for automotive electronics per JESD22 and JESD47

Pinout & Package

PowerPAK® SO-8L single-die leadless package (5.13 mm × 6.15 mm × 1.07 mm), thermally optimized with exposed drain paddle on bottom side for direct PCB copper thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7, 8	Source (S)	Five parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
4	Gate (G)	Single gate input with R_g = 0.20–0.70 Ω - compatible with standard 10 V gate drivers and isolated gate supplies
5, 6	Drain (D)	Two drain terminals connected to exposed copper paddle - primary thermal and current path to PCB ground plane

Key Features

Feature	Design Value
TrenchFET® technology	Enables 6.2 mΩ R_DS(on) in compact SO-8L footprint, reducing board area vs. TO-263 alternatives
100 % R_g and UIS tested	Guarantees gate robustness against ESD and ruggedness against unclamped inductive switching events
Body diode t_rr = 56–120 ns	Minimizes reverse recovery losses in synchronous buck and half-bridge configurations
Exposed drain paddle	Provides 2.2 °C/W junction-to-case thermal resistance - enables > 2× power density vs. standard SO-8
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material definitions

Applications

Engine Start-Stop System	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-current battery disconnect and bidirectional power flow control during engine cranking and regenerative braking. IC Role / Device Role / Timing Role: N-channel high-side switch in dual-MOSFET battery junction box, operating at <100 kHz with 100 % duty cycle capability. Use Value: 175 °C rating allows placement near engine bay heat sources; 61 mJ E_AS withstands load dump transients up to ISO 7637-2 Pulse 5a.	Use Scenario: Primary-side synchronous rectifier in 3 kW bi-directional DC-DC converter linking 12 V and 48 V domains. IC Role / Device Role / Timing Role: Low-side switch in interleaved phase-leg topology, driven by isolated gate driver with 10 V logic level. Use Value: 6.2 mΩ R_DS(on) limits conduction loss to <1.5 W at 50 A, enabling >97 % efficiency at full load without active cooling.
Electric Power Steering (EPS) Motor Driver	ADAS Radar Module Power Stage
Use Scenario: Half-bridge output stage supplying 3-phase BLDC motor with peak currents >100 A during assist maneuvers. IC Role / Device Role / Timing Role: Low-side MOSFET in three half-bridge modules, switching at 20–40 kHz with dead-time controlled by MCU. Use Value: Fast t_r/t_f (5–10 ns) and low Q_gd (5 nC) minimize switching loss and dv/dt-induced shoot-through risk.	Use Scenario: 48 V supply regulation and RF amplifier bias sequencing in 77 GHz radar front-end with strict EMI constraints. IC Role / Device Role / Timing Role: High-efficiency buck converter switch supporting 100 ms burst-mode operation during object detection cycles. Use Value: Low C_iss (2685–3500 pF) and Cr_ss/C_iss ratio <2 % suppress gate oscillation and reduce EMI filter size.

Engine Start-Stop System

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current battery disconnect and bidirectional power flow control during engine cranking and regenerative braking.

IC Role / Device Role / Timing Role: N-channel high-side switch in dual-MOSFET battery junction box, operating at <100 kHz with 100 % duty cycle capability.

Use Value: 175 °C rating allows placement near engine bay heat sources; 61 mJ E_AS withstands load dump transients up to ISO 7637-2 Pulse 5a.

Use Scenario: Primary-side synchronous rectifier in 3 kW bi-directional DC-DC converter linking 12 V and 48 V domains.

IC Role / Device Role / Timing Role: Low-side switch in interleaved phase-leg topology, driven by isolated gate driver with 10 V logic level.

Use Value: 6.2 mΩ R_DS(on) limits conduction loss to <1.5 W at 50 A, enabling >97 % efficiency at full load without active cooling.

Electric Power Steering (EPS) Motor Driver

ADAS Radar Module Power Stage

Use Scenario: Half-bridge output stage supplying 3-phase BLDC motor with peak currents >100 A during assist maneuvers.

IC Role / Device Role / Timing Role: Low-side MOSFET in three half-bridge modules, switching at 20–40 kHz with dead-time controlled by MCU.

Use Value: Fast t_r/t_f (5–10 ns) and low Q_gd (5 nC) minimize switching loss and dv/dt-induced shoot-through risk.

Use Scenario: 48 V supply regulation and RF amplifier bias sequencing in 77 GHz radar front-end with strict EMI constraints.

IC Role / Device Role / Timing Role: High-efficiency buck converter switch supporting 100 ms burst-mode operation during object detection cycles.

Use Value: Low C_iss (2685–3500 pF) and Cr_ss/C_iss ratio <2 % suppress gate oscillation and reduce EMI filter size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH75N60L2	TO-247 package, higher R_DS(on) = 12.5 mΩ, lower I_D = 75 A @ T_C = 100 °C	Requires larger heatsink and through-hole PCB layout; better suited for industrial UPS than space-constrained automotive ECUs	Select when higher avalanche rating (E_AS = 1200 mJ) outweighs size and thermal advantages of SQJA04EP-T1_BE3
STL220N6F7	PowerFLAT™ 5x6 package, R_DS(on) = 5.5 mΩ, but only AEC-Q100 qualified (not Q101), no UIS test data published	Lacks full automotive stress validation; limited to infotainment or body control modules, not safety-critical power stages	Select only for non-safety applications where 0.7 mΩ lower R_DS(on) justifies reduced qualification rigor

Compared with IXTH75N60L2 and STL220N6F7, SQJA04EP-T1_BE3 uniquely combines AEC-Q101 qualification, 6.2 mΩ R_DS(on), and PowerPAK SO-8L's 2.2 °C/W R_thJC-making it optimal for thermally constrained, safety-compliant automotive power stages where layout density and transient robustness are co-prioritized.

Availability

SQJA04EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply across multi-year automotive production programs.

Supply support for SQJA04EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with focus on high-reliability power and signal components for automotive, industrial, and computing markets.

The SQJA04EP-T1_BE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in next-generation 12 V/48 V vehicle architectures.

FAQ

What is the maximum continuous drain current rating for SQJA04EP-T1_BE3 at 125 °C case temperature?

The SQJA04EP-T1_BE3 supports 44 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures reliable operation in high-ambient under-hood environments. Engineers must verify PCB copper area and airflow to maintain T_C ≤ 125 °C under full load.

Does SQJA04EP-T1_BE3 have a fully characterized body diode for synchronous rectification?

Yes, SQJA04EP-T1_BE3 includes a fully specified body diode with V_SD = 0.81–1.2 V at I_F = 10 A and t_rr = 56–120 ns. Its Q_rr = 86–180 nC and I_RM(REC) = −2.7 to −6 A are measured per JEDEC standards, enabling accurate loss modeling in synchronous buck and LLC resonant converters.

Is SQJA04EP-T1_BE3 pin-compatible with other PowerPAK SO-8L MOSFETs?

SQJA04EP-T1_BE3 uses the standard PowerPAK SO-8L single-die footprint defined in Vishay document 66934, with 1.27 mm pitch and identical pad pattern to industry-standard SO-8L devices. However, pin function mapping (e.g., Drain/Sources/Gate locations) matches only other single-N-channel variants in the same outline-not dual or logic-level derivatives.

What is the gate threshold voltage range for SQJA04EP-T1_BE3, and how does it affect drive circuit design?

The gate threshold voltage V_GS(th) for SQJA04EP-T1_BE3 is 2.5–3.5 V at I_D = 250 μA. This tight range ensures consistent turn-on behavior across temperature and lot variation. Drive circuits must supply ≥4.5 V to guarantee full enhancement, and 10 V is recommended to achieve rated R_DS(on) = 6.2 mΩ.

How is thermal performance validated for SQJA04EP-T1_BE3 in real-world PCB layouts?

SQJA04EP-T1_BE3's R_thJA = 68 °C/W and R_thJC = 2.2 °C/W are measured on a 1" × 1" FR4 PCB with 2 oz. copper on both sides. Vishay provides recommended minimum pad patterns (doc 63818) and solder profiles (doc 73257) to replicate these results. For production designs, thermal simulation using the provided package dimensions and material stack-up is strongly advised.

SQJA04EP-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJA04EP-T1_BE3 FAQ

1.How can I place an order for SQJA04EP-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA04EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA04EP-T1_BE3 reliable?

The price and inventory of SQJA04EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA04EP-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQJA04EP-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA04EP-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA04EP-T1_BE3?

SQJA04EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA04EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA04EP-T1_BE3?

For technical support, including SQJA04EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA04EP-T1_BE3 requirements.

6.How does Aetrix verify that SQJA04EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQJA04EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA04EP-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQJA04EP-T1_BE3?

All SQJA04EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA04EP-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA04EP-T1_BE3 part is unused and in its original packaging.

Return procedure for SQJA04EP-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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