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Vishay Siliconix SQJA04EP-T1_GE3
- Part No.:
- SQJA04EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA04EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 60V 75A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,954
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Product details
Overview
SQJA04EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in PowerPAK® SO-8L package, delivering RDS(on) = 6.2 mΩ at VGS = 10 V, 75 A continuous drain current at TC = 25 °C, and AEC-Q101 qualification for under-hood power switching in 48 V mild hybrid systems.
For engineers reviewing the SQJA04EP-T1_GE3 datasheet, SQJA04EP-T1_GE3 pinout, SQJA04EP-T1_GE3 application, or SQJA04EP-T1_GE3 equivalent, this page provides verified thermal resistance (RthJC = 2.2 °C/W), gate charge (Qg = 35–55 nC), body diode recovery (trr = 56–120 ns), and SO-8L land pattern compliance per Vishay doc# 63818.
Technical Context
This trench-based MOSFET uses Vishay's TrenchFET® process to achieve low conduction loss and high avalanche robustness (EAS = 61 mJ). Its 175 °C maximum junction temperature and 100 % UIS testing support sustained operation in engine control units and battery disconnect switches.
The device features a single N-channel configuration with integrated body diode optimized for synchronous rectification and reverse polarity protection. Gate threshold voltage (VGS(th) = 2.5–3.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers without level shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage suitable for 48 V automotive bus transients (ISO 7637-2 Pulse 5a). |
| RDS(on) @ VGS = 10 V | 6.2 mΩ - Confirmed at ID = 10 A and TJ = 25 °C; rises to 11.8 mΩ at 175 °C, enabling accurate thermal derating. |
| ID Continuous | 75 A @ TC = 25 °C - Validated with 1"×1" FR4 PCB mounting; derates to 44 A at TC = 125 °C per thermal limits. |
| Qg Total Gate Charge | 35–55 nC - Measured at VDS = 30 V, ID = 10 A; determines driver power loss and switching speed in high-frequency PWM. |
| tr/tf | 5–10 ns / 5–10 ns - Rise/fall times measured with Rg = 1 Ω, defining minimum achievable switching period in motor gate drives. |
| EAS | 61 mJ - Single-pulse avalanche energy at L = 0.1 mH; supports unclamped inductive switching in solenoid and relay drivers. |
| RthJC | 2.2 °C/W - Junction-to-case thermal resistance; enables direct heatsink attachment via exposed drain pad for high-power dissipation. |
Pinout & Package
PowerPAK® SO-8L is a leadless surface-mount package with exposed copper drain pad on bottom side (no plating); dimensions 6.15 mm × 5.13 mm × 1.07 mm (L × W × H), compliant with IPC-7351B standard land pattern (doc# 63818).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Internally paralleled source terminals; low-inductance return path for high-current switching loops. |
| 4 | Gate (G) | Single gate input terminal; requires <100 nA leakage budget and ≤0.7 Ω gate resistance for stable turn-on/turn-off. |
| 5, 6 | Drain (D) | Exposed copper drain pad (bottom side); primary thermal path to PCB copper pour or heatsink; not electrically isolated. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive temperature cycling (-55 °C to +175 °C), humidity, and mechanical shock per JESD47; required for ECU and ADAS power stages. |
| 100 % UIS tested | Each unit undergoes unclamped inductive switching stress to guarantee minimum EAS = 61 mJ; eliminates field failure in inductive load switching. |
| TrenchFET® process | Enables 6.2 mΩ RDS(on) in SO-8L footprint - 30 % lower on-resistance than planar equivalents at same voltage rating. |
| Body diode trr = 56–120 ns | Fast reverse recovery supports synchronous rectification in bidirectional DC/DC converters without external Schottky. |
| Rg = 0.20–0.70 Ω | Low intrinsic gate resistance reduces Miller plateau time and improves immunity to dv/dt-induced false turn-on. |
Applications
| 48 V Mild Hybrid Battery Disconnect | Engine Control Unit (ECU) Load Switch |
|---|---|
Use Scenario: High-side switch isolating 48 V battery during fault conditions or key-off state in 48 V architectures. IC Role / Device Role / Timing Role: Main power FET controlling bidirectional current flow; operates in linear mode during soft-start and saturated switching during normal operation. Use Value: 6.2 mΩ RDS(on) minimizes voltage drop (<372 mV @ 60 A), preserving system efficiency while 175 °C rating ensures reliability near hot engine compartments. |
Use Scenario: Low-side driver for fuel injector or ignition coil in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Fast-switching N-channel switch sinking peak currents up to 140 A (pulsed) with controlled dI/dt. Use Value: 5–10 ns rise/fall times enable precise pulse-width control down to 100 ns resolution; 100 % UIS testing prevents failure during coil flyback events. |
| Onboard Charger (OBC) Input Stage | 12 V/48 V Bidirectional DC/DC Converter |
Use Scenario: Input protection switch in AC/DC OBC front-end, handling surge currents during plug-in events. IC Role / Device Role / Timing Role: High-reliability power switch with overvoltage clamping capability via avalanche rating. Use Value: 61 mJ EAS withstands repetitive 60 V transients without degradation; AEC-Q101 ensures long-term stability across 15-year vehicle lifetime. |
Use Scenario: Synchronous rectifier in dual-active-bridge (DAB) topology converting between 12 V starter battery and 48 V Li-ion pack. IC Role / Device Role / Timing Role: Low-loss freewheeling path during dead-time intervals; body diode conducts reverse current before gate turn-on. Use Value: 56–120 ns trr and 0.81–1.2 V VSD reduce conduction loss and EMI vs. discrete Schottky; RthJC = 2.2 °C/W enables compact heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF100P217PBF | Higher RDS(on) = 9.5 mΩ at 10 V; TO-220FP package; no AEC-Q101 certification. | Not qualified for automotive under-hood use; limited to industrial power supplies or non-safety-critical loads. | Select only if cost sensitivity outweighs AEC-Q101 requirement and thermal constraints allow higher on-state loss. |
| STL220N6F7AG | Same 60 V rating, RDS(on) = 5.8 mΩ, PowerFLAT 5x6 package; AEC-Q101 qualified; Qg = 45 nC. | Smaller footprint (5 mm × 6 mm vs. 6.15 mm × 5.13 mm); lower RthJA but no exposed drain pad for direct heatsinking. | Prefer when board space is constrained and case-to-heatsink thermal path is less critical than junction-to-ambient performance. |
Compared with IRF100P217PBF, SQJA04EP-T1_GE3 delivers 35 % lower conduction loss and guaranteed automotive qualification; versus STL220N6F7AG, it trades slightly higher RDS(on) for superior thermal interface via exposed drain and proven SO-8L manufacturability in high-volume automotive assembly.
Availability
SQJA04EP-T1_GE3 is available at Aetrix Electronics and suitable for 48 V mild hybrid systems, engine control units, onboard chargers, and bidirectional DC/DC converters requiring stable component supply across extended automotive lifecycles.
Supply support for SQJA04EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures high-performance discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJA04EP-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-current, high-temperature switching in next-generation 48 V vehicle electrical architectures.
FAQ
What is the maximum junction temperature rating for SQJA04EP-T1_GE3?
The SQJA04EP-T1_GE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 stress testing. This rating allows deployment in under-hood environments such as engine control modules and battery disconnect units where ambient temperatures exceed 125 °C. The device maintains specified RDS(on) up to this limit, with datasheet curves confirming 0.0118 Ω at TJ = 175 °C and ID = 10 A.
Does SQJA04EP-T1_GE3 require a gate driver with negative voltage capability?
No, SQJA04EP-T1_GE3 does not require negative gate drive. Its gate-source voltage rating is ±20 V, and typical operation uses 0 V (off) and +10 V (on). The gate threshold voltage range of 2.5–3.5 V ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers. Negative gate bias is unnecessary because the device exhibits low Miller capacitance (Crss = 35–50 pF) and intrinsic gate resistance (0.20–0.70 Ω), minimizing dv/dt-induced turn-on risk.
Can SQJA04EP-T1_GE3 be used in synchronous rectification applications?
Yes, SQJA04EP-T1_GE3 is suitable for synchronous rectification due to its fast body diode recovery (trr = 56–120 ns) and low forward voltage (VSD = 0.81–1.2 V at IF = 10 A). These characteristics reduce conduction loss and switching losses compared to discrete Schottky diodes in DC/DC converters. Its AEC-Q101 qualification further supports use in automotive synchronous buck or DAB topologies where reliability under thermal cycling is critical.
What is the recommended PCB layout for thermal management of SQJA04EP-T1_GE3?
The SQJA04EP-T1_GE3 requires a minimum 1" × 1" FR4 PCB copper area (2 oz. per layer, 100 % coverage) beneath the exposed drain pad for optimal thermal performance, achieving RthJA = 68 °C/W. Vishay doc# 63818 specifies exact pad dimensions: 5.000 mm × 4.061 mm for the central drain pad, with 0.510 mm solder mask openings. Avoid thermal vias directly under the pad unless filled and capped, as voiding may compromise solder joint integrity per doc# 73257.
Is SQJA04EP-T1_GE3 pin-compatible with other PowerPAK SO-8L MOSFETs?
SQJA04EP-T1_GE3 uses the standard PowerPAK® SO-8L single-outline footprint defined in Vishay doc# 66934, making it mechanically compatible with other SO-8L devices like SiR626DP or SQJQ940EL. However, pin function alignment (Drain/Source/Gate positions) is identical only within the same "single" variant group - always verify pinout diagrams in respective datasheets, as dual-channel SO-8L variants assign pins differently.
SQJA04EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA04EP-T1_GE3 FAQ
1.How can I place an order for SQJA04EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA04EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA04EP-T1_GE3 reliable?
The price and inventory of SQJA04EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA04EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA04EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA04EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA04EP-T1_GE3?
SQJA04EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA04EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA04EP-T1_GE3?
For technical support, including SQJA04EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA04EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA04EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA04EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA04EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA04EP-T1_GE3?
All SQJA04EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA04EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA04EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA04EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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