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Vishay Siliconix SQJA06EP-T1_GE3

Part No.:
SQJA06EP-T1_GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
PowerPAK® SO-8
Datasheet:
AetrixSQJA06EP-T1_GE3.pdf
Description:
MOSFET N-CH 60V 57A PPAK SO-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,888

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Product details

Overview

SQJA06EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V (D–S), 57 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature, with RDS(on) = 8.7 mΩ at VGS = 10 V - used in high-efficiency DC–DC converters and motor control stages in engine management systems.

For engineers reviewing the SQJA06EP-T1_GE3 datasheet, SQJA06EP-T1_GE3 pinout, SQJA06EP-T1_GE3 application, or SQJA06EP-T1_GE3 equivalent, this page delivers verified package mapping, thermal performance data, AEC-Q101 qualification status, gate charge metrics, and validated alternatives for automotive power design validation.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature automotive environments. Its PowerPAK SO-8L leadless package enables enhanced thermal transfer to PCB copper while supporting 100 % Rg and UIS testing per AEC-Q101 requirements.

The device features a body diode with trr = 51–110 ns and Qrr = 74–150 nC, enabling synchronous rectification in buck converters. Gate threshold voltage is tightly distributed (2.5–3.5 V), and dynamic parameters - including Qg = 27–45 nC, Qgd = 3.2 nC, and Rg = 0.22–0.68 Ω - support precise PWM timing control in 48 V mild-hybrid systems.

Key Specifications

Parameter Value and Actual Design Meaning
VDS (Max) 60 V - supports 48 V nominal bus systems with 25 % headroom for load dump transients.
RDS(on) @ 10 V 8.7 mΩ - enables <1.5 W conduction loss at 40 A, critical for thermally constrained under-hood modules.
ID (Cont) @ 25 °C 57 A - sustains peak motor phase currents in EPS and HVAC blower drivers without derating.
TJ Range −55 to +175 °C - qualified for direct-mount placement near engines or transmissions per AEC-Q101.
Qg / Qgd 27–45 nC / 3.2 nC - low gate-drain charge minimizes Miller-induced shoot-through risk in half-bridge configurations.
RthJC 2.7 °C/W - enables direct thermal coupling to heatsinked PCB layers, reducing need for external thermal interface materials.
EAS 45 mJ - withstands single-pulse avalanche energy during inductive turn-off in solenoid drivers.

Pinout & Package

Package: PowerPAK® SO-8L (leadless, bottom-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), FR4 PCB mount with 2 oz. copper recommended.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 5 Source (S) Common source connection tied to exposed thermal pad - must be soldered to large PCB copper pour for RthJA = 70 °C/W.
4 Gate (G) High-impedance control input requiring <0.68 Ω gate resistance to suppress oscillation during fast switching.
6, 7, 8 Drain (D) High-current output node connected internally to top-side copper clip - electrically isolated from thermal pad.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive powertrain and chassis applications with full stress testing including HTRB, HAST, and temperature cycling.
100 % Rg tested Ensures consistent gate drive timing across production lots - critical for multi-phase current balancing in ADAS actuators.
TrenchFET® architecture Delivers 20 % lower RDS(on) vs. planar MOSFETs at same die size, improving power density in compact ECUs.
Leadless PowerPAK SO-8L Reduces parasitic inductance by 35 % vs. SO-8, enabling >500 kHz switching in 48 V/12 V dual-buck regulators.
Body diode trr & Qrr 51–110 ns / 74–150 nC - supports ZVS operation in resonant LLC topologies used in onboard chargers.

Applications

Electric Power Steering (EPS) 48 V Mild-Hybrid DC–DC Converter

Use Scenario: High-current H-bridge driver controlling brushless motor torque assist during steering maneuvers.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter stage, operating at 20–40 kHz PWM with 100 ns dead-time control.

Use Value: 8.7 mΩ RDS(on) limits I²R loss to <1.0 W at 35 A peak, maintaining TJ < 150 °C without forced air cooling.

Use Scenario: Synchronous rectifier in secondary side of 3 kW bi-directional buck-boost converter linking 48 V and 12 V domains.

IC Role / Device Role / Timing Role: Secondary-side power switch with body diode conducting freewheeling current before synchronous turn-on.

Use Value: 74–150 nC Qrr and 51–110 ns trr minimize reverse recovery losses, improving efficiency by 0.8 % at 95 % load.

Engine Control Unit (ECU) Fuel Injector Driver Automotive HVAC Blower Motor Controller

Use Scenario: High-speed, high-voltage switch driving 12 V solenoid injectors with 1 ms on-time pulses.

IC Role / Device Role / Timing Role: Single-ended low-side driver with 45 mJ single-pulse avalanche rating absorbing inductive kickback.

Use Value: 45 mJ EAS rating exceeds typical injector flyback energy (≈32 mJ), eliminating need for external snubbers.

Use Scenario: PWM-controlled fan driver in cabin climate system, operating continuously at ambient up to 85 °C.

IC Role / Device Role / Timing Role: High-current switch in half-bridge topology, handling 50 A peak surge during startup.

Use Value: 175 °C TJ rating and 33 A ID at 125 °C allow full-rated operation without derating in sealed dashboard enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF100N04L2PBF RDS(on) = 3.2 mΩ @ 10 V, but only AEC-Q101 qualified in selected lots; no guaranteed 100 % UIS test. Better conduction loss, but lacks full automotive stress screening - suitable for non-safety-critical HVAC modules. Select when lowest RDS(on) is primary goal and full AEC-Q101 traceability is not required.
STL220N6F7 60 V, 220 A rated, PowerFLAT 5x6 package; RDS(on) = 1.6 mΩ but higher Qg (105 nC) and larger footprint. Higher current capability for dual-motor EPS, but slower switching and greater layout area - requires gate driver redesign. Choose for future-proofing high-power EPS platforms where board space permits and gate drive strength is available.

Compared with IRF100N04L2PBF and STL220N6F7, the SQJA06EP-T1_GE3 offers optimal balance of AEC-Q101 assurance, thermal robustness (RthJC = 2.7 °C/W), and moderate gate charge - making it ideal for cost-sensitive, space-constrained 48 V subsystems requiring zero field failure history.

Availability

SQJA06EP-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild-hybrid DC–DC conversion, and engine control unit (ECU) injector drivers requiring stable component supply across automotive production lifecycles.

Supply support for SQJA06EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJA06EP-T1_GE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® PowerPAK SO-8L family, engineered specifically for high-reliability 48 V automotive subsystems demanding low RDS(on), robust avalanche capability, and thermal resilience.

FAQ

What is the maximum continuous drain current rating for SQJA06EP-T1_GE3 at 125 °C case temperature?

The SQJA06EP-T1_GE3 supports 33 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package under sustained high-temperature operation - critical for under-hood applications where ambient temperatures exceed 105 °C. The SQJA06EP-T1_GE3 maintains safe operation within its 175 °C junction limit when properly mounted on ≥1"² FR4 PCB with 2 oz. copper.

Is SQJA06EP-T1_GE3 qualified to AEC-Q101, and what tests does that include?

Yes, SQJA06EP-T1_GE3 is fully AEC-Q101 qualified. This includes stress tests such as high-temperature reverse bias (HTRB), high-accelerated temperature and humidity stress test (HAST), temperature cycling, and mechanical shock - plus 100 % Rg and unclamped inductive switching (UIS) testing per the qualification standard. These validations ensure reliability in automotive powertrain and chassis applications where field failure is unacceptable. The SQJA06EP-T1_GE3 documentation explicitly states AEC-Q101 qualification in its Features section.

What is the gate threshold voltage range for SQJA06EP-T1_GE3, and how does it affect drive circuit design?

The SQJA06EP-T1_GE3 has a gate threshold voltage (VGS(th)) range of 2.5 V to 3.5 V at ID = 250 μA, ensuring reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. This tight distribution reduces variation in switching timing across temperature and process corners. Because the SQJA06EP-T1_GE3 is designed for 10 V gate drive (RDS(on) specified at VGS = 10 V), drive circuits must deliver ≥10 V to achieve the rated 8.7 mΩ on-resistance - especially important in high-efficiency 48 V converters where conduction loss dominates.

Can SQJA06EP-T1_GE3 be used as a synchronous rectifier, and what body diode parameters support that function?

Yes, SQJA06EP-T1_GE3 is suitable for synchronous rectification due to its characterized body diode: forward voltage VSD = 0.83–1.2 V at IF = 10 A and VGS = 0 V, reverse recovery time trr = 51–110 ns, and reverse recovery charge Qrr = 74–150 nC. These values enable efficient replacement of Schottky diodes in secondary-side buck converters, particularly in 48 V/12 V DC–DC stages where minimizing conduction and recovery losses improves overall system efficiency. The SQJA06EP-T1_GE3 datasheet provides full diode characterization curves confirming this capability.

What is the thermal resistance from junction to case (RthJC) for SQJA06EP-T1_GE3, and why is it important for thermal design?

The SQJA06EP-T1_GE3 has a junction-to-case (drain) thermal resistance RthJC of 2.7 °C/W, measured from the silicon die to the exposed drain terminals on the top surface. This low value enables direct thermal coupling to a heatsink or metal-core PCB layer - essential for dissipating up to 55 W at TC = 25 °C without exceeding the 175 °C maximum junction temperature. Unlike RthJA, which depends heavily on PCB layout, RthJC is a fixed package property; using it with measured case temperature allows accurate TJ estimation in real-world automotive modules. The SQJA06EP-T1_GE3 leverages its PowerPAK SO-8L copper-clip construction to achieve this industry-leading RthJC.

SQJA06EP-T1_GE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
PowerPAK® SO-8
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
8.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2800 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
55W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8

SQJA06EP-T1_GE3 FAQ

1.How can I place an order for SQJA06EP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA06EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA06EP-T1_GE3 reliable?

The price and inventory of SQJA06EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA06EP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJA06EP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA06EP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA06EP-T1_GE3?

SQJA06EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA06EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA06EP-T1_GE3?

For technical support, including SQJA06EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA06EP-T1_GE3 requirements.

6.How does Aetrix verify that SQJA06EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJA06EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA06EP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJA06EP-T1_GE3?

All SQJA06EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA06EP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA06EP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJA06EP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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