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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJA20EP-T1_BE3

Name: SQJA20EP-T1_BE3
Brand: Vishay Siliconix
SKU: SQJA20EP-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJA20EP-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJA20EP-T1_BE3.pdf

Description:: N-CHANNEL 200-V (D-S) 175C MOSFE

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Product details

Overview

SQJA20EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 200 V drain-source voltage, 22.5 A continuous drain current at 25 °C, and 0.050 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.

For engineers reviewing the SQJA20EP-T1_BE3 datasheet, SQJA20EP-T1_BE3 pinout, SQJA20EP-T1_BE3 application, or SQJA20EP-T1_BE3 equivalent, this page delivers verified electrical parameters, thermal performance data, PowerPAK SO-8L package layout, and validated alternative parts for automotive power design validation and BOM optimization.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature automotive environments. Its 100 % R_g and UIS testing ensures robustness against gate oscillation and unclamped inductive switching stress.

The device features a 2.2 °C/W junction-to-case thermal resistance and 68 °C/W junction-to-ambient (PCB mount), enabling high-power operation on compact FR4 layouts. Body diode reverse recovery time is 88–180 ns with Q_rr of 301–600 nC, supporting synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports 48 V and 60 V nominal battery systems with 3× transient margin per ISO 7637-2 Pulse 5a.
R_DS(on) @ V_GS = 10 V	0.050 Ω - Enables ≤11.3 W conduction loss at 15 A, reducing heatsink requirements in space-constrained modules.
I_D (continuous, T_C = 25 °C)	22.5 A - Sustains peak motor phase currents in 1–3 kW traction inverters and HVAC blowers without derating.
T_J max	+175 °C - Qualified for engine bay placement in diesel particulate filter (DPF) heaters and turbocharger actuators.
Q_g (V_GS = 10 V)	17.6–27 nC - Matches gate driver ICs like UCC27531 and TC4427A for <25 ns turn-on delay and <20 ns fall time.
E_AS	16 mJ - Withstands single-pulse avalanche energy during load dump or inductive kickback in solenoid drivers.
R_thJC	2.2 °C/W - Allows direct thermal interface to metal-core PCB or heatsink, critical for sustained 13 A operation at 125 °C case temperature.

Pinout & Package

Package: PowerPAK® SO-8L (leadless, surface-mount, dual-side thermal pad). Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H), with exposed copper drain pad on bottom side for enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source connection; six parallel pins reduce source inductance and improve current sharing in paralleled configurations.
5	Gate (G)	Single gate input; low 0.55–1.80 Ω gate resistance minimizes ringing and enables stable 100 kHz+ PWM operation.
6	Drain (D)	Exposed copper drain pad on bottom surface; primary thermal path to PCB ground plane or heatsink.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use across -55 °C to +175 °C, including temperature cycling, HTRB, and uHAST.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching survival-no field failures due to gate drive mismatch or avalanche overstress.
Low C_iss/C_oss ratio	955–1300 pF C_iss, 456–650 pF C_oss - Improves ZVS capability and reduces EMI in resonant LLC converters.
Body diode with soft recovery	trr = 88–180 ns, Q_rr = 301–600 nC - Minimizes voltage overshoot and switching losses when used as freewheeling diode in buck regulators.
TrenchFET® architecture	Optimized cell pitch and trench depth deliver 20 % lower R_DS(on) × area vs. planar MOSFETs - enables smaller footprint in 48 V DC-DC modules.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection (GDI) systems with 12 V supply and 10–15 A peak current. IC Role / Device Role / Timing Role: High-side switch controlling injector coil energization; requires <50 ns turn-off to meet precise fuel metering timing. Use Value: 27 ns turn-off delay and 12 ns fall time ensure sub-millisecond pulse width accuracy; 175 °C rating supports mounting near hot ECU housing.	Use Scenario: Primary-side high-side switch in 3.3 kW bidirectional DC-DC converter linking 12 V and 48 V battery rails in P0 mild hybrid architectures. IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 100–200 kHz with 200 V blocking requirement and 22.5 A RMS current. Use Value: 0.050 Ω R_DS(on) limits conduction loss to <2.5 W at full load; 2.2 °C/W R_thJC enables direct thermal coupling to aluminum baseplate.
Electric Power Steering (EPS) Motor Phase Leg	Commercial Vehicle Battery Disconnect Switch
Use Scenario: Half-bridge upper switch in 3-phase inverter driving 400 W EPS assist motor, subject to vibration, humidity, and 150 °C ambient. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with integrated body diode for regenerative braking commutation. Use Value: Soft-recovery body diode (Q_rr = 301–600 nC) suppresses voltage spikes during phase reversal; AEC-Q101 qualification covers full EPS lifecycle.	Use Scenario: Isolation switch between lithium-ion traction battery and vehicle loads, requiring fail-safe open-circuit protection during crash events. IC Role / Device Role / Timing Role: High-reliability power switch with guaranteed avalanche capability to absorb fault energy without short-circuit failure. Use Value: 16 mJ E_AS and 18 A I_AS withstand 100 ms short-circuit transients; 100 % UIS test ensures no latent damage after repeated overloads.

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection (GDI) systems with 12 V supply and 10–15 A peak current.

IC Role / Device Role / Timing Role: High-side switch controlling injector coil energization; requires <50 ns turn-off to meet precise fuel metering timing.

Use Value: 27 ns turn-off delay and 12 ns fall time ensure sub-millisecond pulse width accuracy; 175 °C rating supports mounting near hot ECU housing.

Use Scenario: Primary-side high-side switch in 3.3 kW bidirectional DC-DC converter linking 12 V and 48 V battery rails in P0 mild hybrid architectures.

IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 100–200 kHz with 200 V blocking requirement and 22.5 A RMS current.

Use Value: 0.050 Ω R_DS(on) limits conduction loss to <2.5 W at full load; 2.2 °C/W R_thJC enables direct thermal coupling to aluminum baseplate.

Electric Power Steering (EPS) Motor Phase Leg

Commercial Vehicle Battery Disconnect Switch

Use Scenario: Half-bridge upper switch in 3-phase inverter driving 400 W EPS assist motor, subject to vibration, humidity, and 150 °C ambient.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with integrated body diode for regenerative braking commutation.

Use Value: Soft-recovery body diode (Q_rr = 301–600 nC) suppresses voltage spikes during phase reversal; AEC-Q101 qualification covers full EPS lifecycle.

Use Scenario: Isolation switch between lithium-ion traction battery and vehicle loads, requiring fail-safe open-circuit protection during crash events.

IC Role / Device Role / Timing Role: High-reliability power switch with guaranteed avalanche capability to absorb fault energy without short-circuit failure.

Use Value: 16 mJ E_AS and 18 A I_AS withstand 100 ms short-circuit transients; 100 % UIS test ensures no latent damage after repeated overloads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	200 V, 220 mΩ R_DS(on) @ 10 V, PowerFLAT 5x6 package, 175 °C rated	Higher R_DS(on) increases conduction loss by 4.4×; lower Q_g (11 nC) suits ultra-high-frequency (>500 kHz) operation	Select when switching frequency >300 kHz dominates over conduction loss; verify thermal interface for same power dissipation.
IXTH20N20X2	200 V, 0.065 Ω R_DS(on) @ 10 V, TO-247 package, 175 °C rated, not AEC-Q101 qualified	Larger TO-247 footprint and higher R_DS(on); superior R_thJC (0.5 °C/W) but lacks automotive qualification and leadless reliability	Use only in non-automotive industrial inverters where AEC-Q101 is not mandated and board space allows TO-247 mounting.

Compared with STL220N5LF8AG and IXTH20N20X2, SQJA20EP-T1_BE3 uniquely balances low R_DS(on), AEC-Q101 compliance, and PowerPAK SO-8L thermal density-making it optimal for space- and reliability-constrained 48 V automotive power stages where both efficiency and qualification are mandatory.

Availability

SQJA20EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for Tier 1 OEM programs.

Supply support for SQJA20EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and automotive-qualified components.

The SQJA20EP-T1_BE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-temperature, high-voltage switching in engine control, ADAS, and electrified powertrain subsystems.

FAQ

What is the maximum continuous drain current for SQJA20EP-T1_BE3 at 125 °C case temperature?

The SQJA20EP-T1_BE3 supports 13 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures reliable operation within safe junction temperature limits up to +175 °C. Designers must verify PCB copper area and airflow to maintain T_C ≤ 125 °C under full load.

Is SQJA20EP-T1_BE3 qualified to AEC-Q101, and what tests does that include?

Yes, SQJA20EP-T1_BE3 is fully AEC-Q101 qualified. This includes stress tests such as high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling (TC), unbiased highly accelerated stress test (uHAST), and mechanical shock/vibration. The qualification confirms suitability for automotive under-hood applications where reliability over 15-year service life is required.

Does SQJA20EP-T1_BE3 have an integrated body diode, and what are its key recovery characteristics?

Yes, SQJA20EP-T1_BE3 includes a monolithic body diode with typical forward voltage of 0.81 V at 10 A and reverse recovery time (t_rr) of 88–180 ns. Its Q_rr is 301–600 nC, and peak reverse recovery current (I_RM(REC)) reaches –6.7 A. These values enable efficient freewheeling in buck converters and reduce switching losses compared to external Schottky solutions.

What is the gate threshold voltage range for SQJA20EP-T1_BE3, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) for SQJA20EP-T1_BE3 is 2.5–3.5 V at 250 μA drain current. This relatively low and tight range ensures consistent turn-on behavior across temperature and process variation. Drive circuits must supply ≥7.5 V to achieve specified R_DS(on) (0.052 Ω); 10 V drive yields optimal on-resistance (0.050 Ω) and minimizes Miller plateau duration.

Can SQJA20EP-T1_BE3 be used in synchronous rectification topologies, and what thermal considerations apply?

Yes, SQJA20EP-T1_BE3 is suitable for synchronous rectification due to its low R_DS(on), fast switching (t_f = 12–20 ns), and soft-recovery body diode. Thermal design must account for its 2.2 °C/W R_thJC: the exposed drain pad must be soldered to a large, thermally robust PCB copper pour or heatsink. Junction temperature must remain ≤175 °C under worst-case RMS current and ambient conditions.

SQJA20EP-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 22.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJA20EP-T1_BE3 FAQ

1.How can I place an order for SQJA20EP-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA20EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA20EP-T1_BE3 reliable?

The price and inventory of SQJA20EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA20EP-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQJA20EP-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA20EP-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA20EP-T1_BE3?

SQJA20EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA20EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA20EP-T1_BE3?

For technical support, including SQJA20EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA20EP-T1_BE3 requirements.

6.How does Aetrix verify that SQJA20EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQJA20EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA20EP-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQJA20EP-T1_BE3?

All SQJA20EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA20EP-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA20EP-T1_BE3 part is unused and in its original packaging.

Return procedure for SQJA20EP-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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